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GB1057687A - Improvements in and relating to methods of manufacturing semiconductor devices - Google Patents

Improvements in and relating to methods of manufacturing semiconductor devices

Info

Publication number
GB1057687A
GB1057687A GB50545/64A GB5054564A GB1057687A GB 1057687 A GB1057687 A GB 1057687A GB 50545/64 A GB50545/64 A GB 50545/64A GB 5054564 A GB5054564 A GB 5054564A GB 1057687 A GB1057687 A GB 1057687A
Authority
GB
United Kingdom
Prior art keywords
layer
substrate
laser
semi
welding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB50545/64A
Inventor
Kenneth James Stuart Donaldson
Elizabeth Mcghie
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB50545/64A priority Critical patent/GB1057687A/en
Priority to DE1514288A priority patent/DE1514288C3/en
Priority to FR41607A priority patent/FR1457203A/en
Publication of GB1057687A publication Critical patent/GB1057687A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29111—Tin [Sn] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29144—Gold [Au] as principal constituent
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
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    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H01L2224/83805—Soldering or alloying involving forming a eutectic alloy at the bonding interface
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    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Die Bonding (AREA)

Abstract

1,057,687. Bending a semi-conductor to a substrate. ASSOCIATED SEMICONDUCTOR MANUFACTURERS Ltd. Aug. 31, 1965 [Dec. 11, 1964], No. 50545/64. Heading H1K. A semi-conductor body is bonded to a substrate via an intermediate metallic layer using a laser, wherein the laser beam passes through the body on to the layer thereby welding the body to the substrate, the laser beam being of such a wavelength that absorption in the body is appreciably lower than in the layer. In a specific embodiment a phosphorus doped Si planar transistor is bonded to a gold-plated " Kovar " (Registered Trade Mark) header via a gold layer. The header has a glass-filled base and Fernico connecting wires for the electrodes. A Xenon laser may be used to heat the layer to at least 370‹ C. and thus form a Au/Si eutectic. In alternative embodiments the intermediate layer may be Au/Si or Au/Sn alloy whilst the support may be of Ni or nickel plated. After welding, the body may be encapsulated. A diode may also be mounted in a similar manner.
GB50545/64A 1964-12-11 1964-12-11 Improvements in and relating to methods of manufacturing semiconductor devices Expired GB1057687A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB50545/64A GB1057687A (en) 1964-12-11 1964-12-11 Improvements in and relating to methods of manufacturing semiconductor devices
DE1514288A DE1514288C3 (en) 1964-12-11 1965-12-07 Method for attaching a semiconductor body to a carrier plate
FR41607A FR1457203A (en) 1964-12-11 1965-12-09 Semiconductor manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB50545/64A GB1057687A (en) 1964-12-11 1964-12-11 Improvements in and relating to methods of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
GB1057687A true GB1057687A (en) 1967-02-08

Family

ID=10456301

Family Applications (1)

Application Number Title Priority Date Filing Date
GB50545/64A Expired GB1057687A (en) 1964-12-11 1964-12-11 Improvements in and relating to methods of manufacturing semiconductor devices

Country Status (3)

Country Link
DE (1) DE1514288C3 (en)
FR (1) FR1457203A (en)
GB (1) GB1057687A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466860A1 (en) * 1979-10-05 1981-04-10 Radiotechnique Compelec Soldering of silicon semiconductor crystal onto nickel carrier - esp. where power semiconductor is soldered via tin film onto copper heat sink coated with nickel

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH645208A5 (en) * 1978-10-31 1984-09-14 Bbc Brown Boveri & Cie PROCESS FOR MAKING ELECTRICAL CONTACTS ON SEMICONDUCTOR COMPONENTS.
DE3032461A1 (en) * 1980-08-28 1982-04-01 Siemens AG, 1000 Berlin und 8000 München Alloyed metal contact prodn. on oriented semiconductor crystal - by rastering surface with intense pulsed laser light before applying metal assists alloying
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
DE3310362A1 (en) * 1983-03-22 1984-10-11 Siemens AG, 1000 Berlin und 8000 München Method of altering the optical properties of the interface between semiconductor material and metal contact
JP2813507B2 (en) * 1992-04-23 1998-10-22 三菱電機株式会社 Bonding method and bonding apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2466860A1 (en) * 1979-10-05 1981-04-10 Radiotechnique Compelec Soldering of silicon semiconductor crystal onto nickel carrier - esp. where power semiconductor is soldered via tin film onto copper heat sink coated with nickel

Also Published As

Publication number Publication date
DE1514288B2 (en) 1974-10-31
FR1457203A (en) 1966-10-28
DE1514288A1 (en) 1969-06-12
DE1514288C3 (en) 1975-06-26

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