GB9805086D0 - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- GB9805086D0 GB9805086D0 GBGB9805086.7A GB9805086A GB9805086D0 GB 9805086 D0 GB9805086 D0 GB 9805086D0 GB 9805086 A GB9805086 A GB 9805086A GB 9805086 D0 GB9805086 D0 GB 9805086D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- light emitting
- emitting device
- light
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81509797A | 1997-03-12 | 1997-03-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9805086D0 true GB9805086D0 (en) | 1998-05-06 |
| GB2323210A GB2323210A (en) | 1998-09-16 |
Family
ID=25216843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9805086A Withdrawn GB2323210A (en) | 1997-03-12 | 1998-03-10 | Light emitting device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH10256601A (en) |
| DE (1) | DE19753470A1 (en) |
| GB (1) | GB2323210A (en) |
| SG (1) | SG63757A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112366255A (en) * | 2020-09-30 | 2021-02-12 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| EP0996173B1 (en) * | 1998-10-23 | 2015-12-30 | Xerox Corporation | Semiconductor structures including polycrystalline GaN layers and method of manufacturing |
| JP3770014B2 (en) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | Nitride semiconductor device |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| JP3719047B2 (en) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | Nitride semiconductor device |
| DE10015371A1 (en) * | 2000-03-28 | 2001-10-18 | Huga Optotech Inc | Production of an epitaxial layer on a single crystalline substrate comprises heating a purified substrate in an epitaxy device while introducing organometallic precursors and a nitrogen-containing gas at a specified flow rate |
| US6586762B2 (en) | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
| US7230263B2 (en) | 2001-04-12 | 2007-06-12 | Nichia Corporation | Gallium nitride compound semiconductor element |
| US7358522B2 (en) | 2001-11-05 | 2008-04-15 | Nichia Corporation | Semiconductor device |
| JP3898537B2 (en) | 2002-03-19 | 2007-03-28 | 日本電信電話株式会社 | Nitride semiconductor thin film forming method and nitride semiconductor light emitting device |
| US7479448B2 (en) | 2002-12-03 | 2009-01-20 | Nec Corporation | Method of manufacturing a light emitting device with a doped active layer |
| RU2306634C1 (en) * | 2006-08-08 | 2007-09-20 | Закрытое Акционерное Общество "Светлана - Оптоэлектроника" | Light-emitting semiconductor heterostructure |
| TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0832112A (en) * | 1994-07-20 | 1996-02-02 | Toyoda Gosei Co Ltd | Group iii nitride semiconductor light emitting element |
| KR100267839B1 (en) * | 1995-11-06 | 2000-10-16 | 오가와 에이지 | Nitride semiconductor device |
-
1997
- 1997-10-08 SG SG1997003691A patent/SG63757A1/en unknown
- 1997-12-02 DE DE1997153470 patent/DE19753470A1/en active Pending
-
1998
- 1998-02-19 JP JP3692498A patent/JPH10256601A/en active Pending
- 1998-03-10 GB GB9805086A patent/GB2323210A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112366255A (en) * | 2020-09-30 | 2021-02-12 | 华灿光电（浙江）有限公司 | Light emitting diode epitaxial wafer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE19753470A1 (en) | 1998-09-24 |
| SG63757A1 (en) | 1999-03-30 |
| GB2323210A (en) | 1998-09-16 |
| JPH10256601A (en) | 1998-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |