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EP0720242A3 - AlGaInP light emitting device - Google Patents

AlGaInP light emitting device Download PDF

Info

Publication number
EP0720242A3
EP0720242A3 EP95309391A EP95309391A EP0720242A3 EP 0720242 A3 EP0720242 A3 EP 0720242A3 EP 95309391 A EP95309391 A EP 95309391A EP 95309391 A EP95309391 A EP 95309391A EP 0720242 A3 EP0720242 A3 EP 0720242A3
Authority
EP
European Patent Office
Prior art keywords
light emitting
emitting device
algainp light
algainp
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95309391A
Other languages
German (de)
French (fr)
Other versions
EP0720242A2 (en
Inventor
Nobuhiko Noto
Keizo Adomi
Takao Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP33792194A external-priority patent/JP2937054B2/en
Priority claimed from JP2742195A external-priority patent/JP2937060B2/en
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP0720242A2 publication Critical patent/EP0720242A2/en
Publication of EP0720242A3 publication Critical patent/EP0720242A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
EP95309391A 1994-12-27 1995-12-22 AlGaInP light emitting device Withdrawn EP0720242A3 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP33792194A JP2937054B2 (en) 1994-12-27 1994-12-27 Algainp-based light-emitting device
JP337921/94 1994-12-27
JP27421/95 1995-01-24
JP2742195A JP2937060B2 (en) 1995-01-24 1995-01-24 Algainp based light emission device
US08/577,961 US5739553A (en) 1994-12-27 1995-12-26 Algainp light-emitting device

Publications (2)

Publication Number Publication Date
EP0720242A2 EP0720242A2 (en) 1996-07-03
EP0720242A3 true EP0720242A3 (en) 1997-07-30

Family

ID=27285787

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95309391A Withdrawn EP0720242A3 (en) 1994-12-27 1995-12-22 AlGaInP light emitting device

Country Status (2)

Country Link
US (1) US5739553A (en)
EP (1) EP0720242A3 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473804A (en) * 2009-06-30 2012-05-23 飞利浦拉米尔德斯照明设备有限责任公司 P-contact layer for a iii-p semiconductor light emitting device

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09283798A (en) 1996-04-19 1997-10-31 Rohm Co Ltd Semiconductor light emitting device and manufacture thereof
DE19741609C2 (en) * 1997-09-20 2003-02-27 Vishay Semiconductor Gmbh Use of a superlattice structure comprising a plurality of heterojunction layer layers arranged one behind the other to improve the lateral current propagation in a light-emitting semiconductor diode
US8587020B2 (en) 1997-11-19 2013-11-19 Epistar Corporation LED lamps
US6633120B2 (en) 1998-11-19 2003-10-14 Unisplay S.A. LED lamps
US6169298B1 (en) * 1998-08-10 2001-01-02 Kingmax Technology Inc. Semiconductor light emitting device with conductive window layer
JP2000068554A (en) * 1998-08-21 2000-03-03 Sharp Corp Semiconductor light emitting element
KR100869962B1 (en) * 2006-12-07 2008-11-24 한국전자통신연구원 The Manufacturing Method of Light Emission Device including Current Spreading Layer
JP4903643B2 (en) * 2007-07-12 2012-03-28 株式会社東芝 Semiconductor light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
EP0616377A2 (en) * 1993-03-15 1994-09-21 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
EP0627772A2 (en) * 1993-05-31 1994-12-07 Shin-Etsu Handotai Company Limited An AlGaInP light emitting device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766455A (en) * 1993-08-24 1995-03-10 Shin Etsu Handotai Co Ltd Semiconductor light emitting device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008718A (en) * 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
EP0616377A2 (en) * 1993-03-15 1994-09-21 Kabushiki Kaisha Toshiba Semiconductor light-emitting element and method for manufacturing therefor
EP0627772A2 (en) * 1993-05-31 1994-12-07 Shin-Etsu Handotai Company Limited An AlGaInP light emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102473804A (en) * 2009-06-30 2012-05-23 飞利浦拉米尔德斯照明设备有限责任公司 P-contact layer for a iii-p semiconductor light emitting device

Also Published As

Publication number Publication date
US5739553A (en) 1998-04-14
EP0720242A2 (en) 1996-07-03

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