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GB1530323A - Semiconductor waveguide structures - Google Patents

Semiconductor waveguide structures

Info

Publication number
GB1530323A
GB1530323A GB5249075A GB5249075A GB1530323A GB 1530323 A GB1530323 A GB 1530323A GB 5249075 A GB5249075 A GB 5249075A GB 5249075 A GB5249075 A GB 5249075A GB 1530323 A GB1530323 A GB 1530323A
Authority
GB
United Kingdom
Prior art keywords
waveguide structures
semiconductor waveguide
substrate
liquid
phase epitaxy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5249075A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5249075A priority Critical patent/GB1530323A/en
Priority to AU20316/76A priority patent/AU500265B2/en
Priority to DE19762656532 priority patent/DE2656532A1/en
Priority to CA267,912A priority patent/CA1070029A/en
Priority to CH1589176A priority patent/CH609488A5/en
Priority to FR7638714A priority patent/FR2336797A1/en
Publication of GB1530323A publication Critical patent/GB1530323A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/122—Basic optical elements, e.g. light-guiding paths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

Methods are described for fabricating waveguides having an "embedded" (or "submerged") ridge or heterostructure in liquid-phase epitaxy. The concept is based on grooves (11), which are formed in the substrate (10) and which are preferentially filled when layers are grown on this substrate in liquid-phase epitaxy. The interruption of the epitaxial growth necessary in conventional methods, and the etching at this interruption stage are dispensed with. <IMAGE>
GB5249075A 1975-12-22 1975-12-22 Semiconductor waveguide structures Expired GB1530323A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB5249075A GB1530323A (en) 1975-12-22 1975-12-22 Semiconductor waveguide structures
AU20316/76A AU500265B2 (en) 1975-12-22 1976-12-07 Epitaxially formed heterostructure optical waveguide structure
DE19762656532 DE2656532A1 (en) 1975-12-22 1976-12-14 METHOD OF MANUFACTURING A HETEROSTRUCTURAL SEMI-CONDUCTOR-WAVE GUIDE ARRANGEMENT
CA267,912A CA1070029A (en) 1975-12-22 1976-12-15 Methods for forming semiconductor waveguide devices
CH1589176A CH609488A5 (en) 1975-12-22 1976-12-17 Method for fabricating a heterostructure semiconductor waveguide arrangement
FR7638714A FR2336797A1 (en) 1975-12-22 1976-12-22 MANUFACTURING METHOD OF SEMICONDUCTOR WAVE GUIDES WITH HETEROJUNCTIONS

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5249075A GB1530323A (en) 1975-12-22 1975-12-22 Semiconductor waveguide structures

Publications (1)

Publication Number Publication Date
GB1530323A true GB1530323A (en) 1978-10-25

Family

ID=10464116

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5249075A Expired GB1530323A (en) 1975-12-22 1975-12-22 Semiconductor waveguide structures

Country Status (6)

Country Link
AU (1) AU500265B2 (en)
CA (1) CA1070029A (en)
CH (1) CH609488A5 (en)
DE (1) DE2656532A1 (en)
FR (1) FR2336797A1 (en)
GB (1) GB1530323A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2123604A (en) * 1982-06-29 1984-02-01 Standard Telephones Cables Ltd Injection laser manufacture

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4166253A (en) * 1977-08-15 1979-08-28 International Business Machines Corporation Heterostructure diode injection laser having a constricted active region
CA1127282A (en) * 1978-05-22 1982-07-06 Takashi Sugino Semiconductor laser and method of making the same
JPS5522807A (en) * 1978-06-30 1980-02-18 Hitachi Ltd Semiconductor laser element and manufacturing of the same
GB2029083B (en) * 1978-08-18 1982-08-11 Standard Telephones Cables Ltd Semiconductor waveguide devices
GB2046983B (en) * 1979-01-18 1983-03-16 Nippon Electric Co Semiconductor lasers
FR2548220B1 (en) * 1983-07-01 1987-07-31 Labo Electronique Physique LIGHT WAVEGUIDE ON SEMICONDUCTOR MATERIAL
WO1995005616A1 (en) * 1993-08-13 1995-02-23 Telstra Corporation Limited A method of forming an optical waveguide device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1065460A (en) * 1975-06-23 1979-10-30 Robert D. Burnham Buried-heterostructure diode injection laser

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2123604A (en) * 1982-06-29 1984-02-01 Standard Telephones Cables Ltd Injection laser manufacture

Also Published As

Publication number Publication date
AU2031676A (en) 1978-06-15
AU500265B2 (en) 1979-05-17
FR2336797A1 (en) 1977-07-22
CH609488A5 (en) 1979-02-28
CA1070029A (en) 1980-01-15
FR2336797B1 (en) 1982-05-21
DE2656532A1 (en) 1977-07-07

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941222