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GB1245765A - Surface diffused semiconductor devices - Google Patents

Surface diffused semiconductor devices

Info

Publication number
GB1245765A
GB1245765A GB4611568A GB4611568A GB1245765A GB 1245765 A GB1245765 A GB 1245765A GB 4611568 A GB4611568 A GB 4611568A GB 4611568 A GB4611568 A GB 4611568A GB 1245765 A GB1245765 A GB 1245765A
Authority
GB
United Kingdom
Prior art keywords
region
buried electrode
collector
emitter
buried
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4611568A
Inventor
Dale Marius Brown
William Ernest Engeler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1245765A publication Critical patent/GB1245765A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

1,245,765. Semi-conductor devices. GENERAL ELECTRIC CO. 27 Sept., 1968 [13 Oct., 1967], No. 46115/68. Heading H1K. Surface channelling under passivation on a region is prevented by applying a fixed potential opposite in sign to the majority carriers of the region to a capacitative electrode buried in the passivation. The technique is applied to a planar junction, the buried electrode being formed only over that region in which inversion would occur and terminating substantially coextensively with the junction. One embodiment is in the form of a PNP transistor: the buried electrode covers the surface of the collector region and is used during processing (together with the underlying insulation) as a diffusion masking in the formation of the base region. Emitter and base metallization tracks are later applied over the insulation above the buried electrode, capacitance between these and the substrate (collector) being low since the buried electrode is operated at a fixed potential. In a modification the buried electrode is formed in two concentric portions, the gap between them being used as a diffusion aperture for the formation in the collector region of a heavily doped guard ring at the same time as the emitter is diffused. In variants of these, the thicknesses of the buried electrode and its underlying insulation are made so small that during emitter diffusion some impurity can reach the collector region to enhance the conductivity of its surface. A further embodiment is a lateral transistor with concentric emitter and collector planar regions. That part of the base region exposed in the annular gap is covered with passivation containing the buried electrode extending over the whole area.
GB4611568A 1967-10-13 1968-09-27 Surface diffused semiconductor devices Expired GB1245765A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67522667A 1967-10-13 1967-10-13

Publications (1)

Publication Number Publication Date
GB1245765A true GB1245765A (en) 1971-09-08

Family

ID=24709564

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4611568A Expired GB1245765A (en) 1967-10-13 1968-09-27 Surface diffused semiconductor devices

Country Status (8)

Country Link
JP (1) JPS4841391B1 (en)
BR (1) BR6802913D0 (en)
CH (1) CH495629A (en)
DE (2) DE1803026C3 (en)
FR (1) FR1587469A (en)
GB (1) GB1245765A (en)
NL (1) NL6814111A (en)
SE (1) SE352775B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1944280B2 (en) * 1969-09-01 1971-06-09 MONOLITICALLY INTEGRATED SOLID-STATE CIRCUIT FROM FIELD EFFECT TRANSISTORS
FR2420209A1 (en) * 1978-03-14 1979-10-12 Thomson Csf HIGH VOLTAGE INTEGRATED CIRCUIT STRUCTURE
DE3333242C2 (en) * 1982-09-13 1995-08-17 Nat Semiconductor Corp Monolithically integrated semiconductor circuit
US5204545A (en) * 1989-11-22 1993-04-20 Mitsubishi Denki Kabushiki Kaisha Structure for preventing field concentration in semiconductor device and method of forming the same
JPH0783048B2 (en) * 1989-11-22 1995-09-06 三菱電機株式会社 Electric field concentration preventing structure in semiconductor device and method of forming the same
US5606195A (en) * 1995-12-26 1997-02-25 Hughes Electronics High-voltage bipolar transistor utilizing field-terminated bond-pad electrodes

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL293292A (en) * 1962-06-11
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes

Also Published As

Publication number Publication date
DE1803026C3 (en) 1981-09-10
SE352775B (en) 1973-01-08
DE1803026B2 (en) 1973-09-20
FR1587469A (en) 1970-03-20
DE1803026A1 (en) 1971-02-11
NL6814111A (en) 1969-04-15
DE6802215U (en) 1972-04-06
JPS4841391B1 (en) 1973-12-06
CH495629A (en) 1970-08-31
BR6802913D0 (en) 1973-01-04

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