GB1076371A - Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction - Google Patents
Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junctionInfo
- Publication number
- GB1076371A GB1076371A GB123365A GB123365A GB1076371A GB 1076371 A GB1076371 A GB 1076371A GB 123365 A GB123365 A GB 123365A GB 123365 A GB123365 A GB 123365A GB 1076371 A GB1076371 A GB 1076371A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- junction
- regions
- breakdown voltage
- surface region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015556 catabolic process Effects 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000002708 enhancing effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Rectifiers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1,076,371. Semi-conductor devices. MOTOROLA Inc. Jan. 11, 1965 [Jan. 27, 1964], No. 1233/65. Heading H1K. The avalanche breakdown voltage of a PN junction between a surface region and an underlying region of a semi-conductor body is increased by surrounding the surface region with a further region or regions of the same conductivity type spaced from but within the space charge region of the junction at its breakdown voltage. In a typical diode device the surface region is circular and the further region or regions annular and concentric or eccentric with respect to it and preferably formed in the same diffusion process through oxide masking. This subsequently functions as a passivating layer. Alternatively the region is square or rectangular and the further regions square or rectangular frames. A planar transistor is made on a high resistivity layer epitaxially grown on a heavily doped collector substrate in the same way by diffusion, the emitter region being formed within the surface region in a further diffusion step. In operation the further regions, which may also be formed by alloying or epitaxial deposition, are left floating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32332363A | 1963-11-13 | 1963-11-13 | |
| US34044764A | 1964-01-27 | 1964-01-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1076371A true GB1076371A (en) | 1967-07-19 |
Family
ID=26983893
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4312964A Expired GB1030050A (en) | 1963-11-13 | 1964-10-22 | Punchthrough breakdown rectifier |
| GB123365A Expired GB1076371A (en) | 1963-11-13 | 1965-01-11 | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4312964A Expired GB1030050A (en) | 1963-11-13 | 1964-10-22 | Punchthrough breakdown rectifier |
Country Status (6)
| Country | Link |
|---|---|
| BE (2) | BE655472A (en) |
| CH (2) | CH419355A (en) |
| DE (1) | DE1514187A1 (en) |
| FR (1) | FR1421136A (en) |
| GB (2) | GB1030050A (en) |
| NL (2) | NL6412823A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3721001A1 (en) * | 1987-06-25 | 1989-01-05 | Bosch Gmbh Robert | HIGHLY LOCKING SEMICONDUCTOR COMPONENT |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1589529C3 (en) * | 1967-06-19 | 1982-10-14 | Robert Bosch Gmbh, 7000 Stuttgart | Planar transistor |
| DE1789195C2 (en) * | 1967-06-19 | 1983-03-17 | Robert Bosch Gmbh, 7000 Stuttgart | Planar transistor |
| NL6904543A (en) * | 1969-03-25 | 1970-09-29 | ||
| NL161923C (en) * | 1969-04-18 | 1980-03-17 | Philips Nv | SEMICONDUCTOR DEVICE. |
| US3727116A (en) * | 1970-05-05 | 1973-04-10 | Rca Corp | Integral thyristor-rectifier device |
| JPS5320194B2 (en) * | 1972-04-20 | 1978-06-24 | ||
| IT1212767B (en) * | 1983-07-29 | 1989-11-30 | Ates Componenti Elettron | SEMICONDUCTOR OVERVOLTAGE SUPPRESSOR WITH PREDETINABLE IGNITION VOLTAGE WITH PRECISION. |
-
1964
- 1964-10-22 GB GB4312964A patent/GB1030050A/en not_active Expired
- 1964-11-04 NL NL6412823A patent/NL6412823A/xx unknown
- 1964-11-09 BE BE655472D patent/BE655472A/xx unknown
- 1964-11-10 CH CH1449464A patent/CH419355A/en unknown
-
1965
- 1965-01-11 GB GB123365A patent/GB1076371A/en not_active Expired
- 1965-01-20 FR FR2552A patent/FR1421136A/en not_active Expired
- 1965-01-21 BE BE658633D patent/BE658633A/xx unknown
- 1965-01-22 CH CH93765A patent/CH423000A/en unknown
- 1965-01-26 DE DE19651514187 patent/DE1514187A1/en active Pending
- 1965-01-27 NL NL6501004A patent/NL6501004A/xx unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3721001A1 (en) * | 1987-06-25 | 1989-01-05 | Bosch Gmbh Robert | HIGHLY LOCKING SEMICONDUCTOR COMPONENT |
Also Published As
| Publication number | Publication date |
|---|---|
| BE658633A (en) | 1965-05-17 |
| NL6412823A (en) | 1965-05-14 |
| CH423000A (en) | 1966-10-31 |
| BE655472A (en) | 1965-03-01 |
| NL6501004A (en) | 1965-07-28 |
| GB1030050A (en) | 1966-05-18 |
| DE1514187A1 (en) | 1969-05-14 |
| FR1421136A (en) | 1965-12-10 |
| CH419355A (en) | 1966-08-31 |
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