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FR3038132B1 - Cellule memoire resistive ayant une structure compacte - Google Patents

Cellule memoire resistive ayant une structure compacte

Info

Publication number
FR3038132B1
FR3038132B1 FR1555732A FR1555732A FR3038132B1 FR 3038132 B1 FR3038132 B1 FR 3038132B1 FR 1555732 A FR1555732 A FR 1555732A FR 1555732 A FR1555732 A FR 1555732A FR 3038132 B1 FR3038132 B1 FR 3038132B1
Authority
FR
France
Prior art keywords
memory cell
compact structure
resistive memory
resistive
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1555732A
Other languages
English (en)
Other versions
FR3038132A1 (fr
Inventor
Philippe Boivin
Simon Jeannot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS, STMicroelectronics Rousset SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1555732A priority Critical patent/FR3038132B1/fr
Priority to US14/970,347 priority patent/US9793321B2/en
Publication of FR3038132A1 publication Critical patent/FR3038132A1/fr
Application granted granted Critical
Publication of FR3038132B1 publication Critical patent/FR3038132B1/fr
Priority to US15/694,463 priority patent/US10283563B2/en
Priority to US16/357,152 priority patent/US10707270B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
FR1555732A 2015-06-23 2015-06-23 Cellule memoire resistive ayant une structure compacte Expired - Fee Related FR3038132B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1555732A FR3038132B1 (fr) 2015-06-23 2015-06-23 Cellule memoire resistive ayant une structure compacte
US14/970,347 US9793321B2 (en) 2015-06-23 2015-12-15 Resistive memory cell having a compact structure
US15/694,463 US10283563B2 (en) 2015-06-23 2017-09-01 Resistive memory cell having a compact structure
US16/357,152 US10707270B2 (en) 2015-06-23 2019-03-18 Resistive memory cell having a compact structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1555732A FR3038132B1 (fr) 2015-06-23 2015-06-23 Cellule memoire resistive ayant une structure compacte

Publications (2)

Publication Number Publication Date
FR3038132A1 FR3038132A1 (fr) 2016-12-30
FR3038132B1 true FR3038132B1 (fr) 2017-08-11

Family

ID=54356454

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1555732A Expired - Fee Related FR3038132B1 (fr) 2015-06-23 2015-06-23 Cellule memoire resistive ayant une structure compacte

Country Status (2)

Country Link
US (3) US9793321B2 (fr)
FR (1) FR3038132B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3066310B1 (fr) 2017-05-12 2020-01-24 Stmicroelectronics (Rousset) Sas Cellule memoire de type ram resistive
US10079067B1 (en) * 2017-09-07 2018-09-18 Winbond Electronics Corp. Data read method and a non-volatile memory apparatus using the same
JP6829733B2 (ja) * 2019-01-16 2021-02-10 ウィンボンド エレクトロニクス コーポレーション 抵抗変化型ランダムアクセスメモリ
EP3876274A1 (fr) 2020-03-05 2021-09-08 Infineon Technologies AG Circuit intégré, procédé de fabrication d'un circuit intégré, tranche et procédé de fabrication d'une tranche

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982912A (ja) * 1995-09-13 1997-03-28 Toshiba Corp 半導体記憶装置及びその製造方法
WO2006123306A1 (fr) * 2005-05-19 2006-11-23 Koninklijke Philips Electronics N.V. Procede de surveillance de la 'premiere region a fondre' dans une cellule pcm et dispositifs ainsi obtenus
EP1845567A1 (fr) * 2006-04-11 2007-10-17 STMicroelectronics S.r.l. Dispositif de mémoire à changement de phase et procédé associé
US7538411B2 (en) 2006-04-26 2009-05-26 Infineon Technologies Ag Integrated circuit including resistivity changing memory cells
US7479671B2 (en) 2006-08-29 2009-01-20 International Business Machines Corporation Thin film phase change memory cell formed on silicon-on-insulator substrate
US8258493B2 (en) * 2006-11-20 2012-09-04 Panasonic Corporation Nonvolatile semiconductor memory apparatus and manufacturing method thereof
US8513637B2 (en) * 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
US8043888B2 (en) 2008-01-18 2011-10-25 Freescale Semiconductor, Inc. Phase change memory cell with heater and method therefor
KR101415509B1 (ko) 2008-07-24 2014-07-04 삼성전자주식회사 메모리 소자, 그 제조 방법 및 동작 방법
JP2010251529A (ja) * 2009-04-16 2010-11-04 Sony Corp 半導体記憶装置およびその製造方法
JP2012204404A (ja) 2011-03-23 2012-10-22 Toshiba Corp 抵抗変化型不揮発性半導体記憶装置
US8698118B2 (en) 2012-02-29 2014-04-15 Globalfoundries Singapore Pte Ltd Compact RRAM device and methods of making same
US9455343B2 (en) * 2013-09-27 2016-09-27 Intel Corporation Hybrid phase field effect transistor
KR102114202B1 (ko) 2013-11-25 2020-05-26 삼성전자주식회사 가변 저항 메모리 소자 및 그 형성 방법

Also Published As

Publication number Publication date
US20190214434A1 (en) 2019-07-11
US10283563B2 (en) 2019-05-07
US20180012935A1 (en) 2018-01-11
US10707270B2 (en) 2020-07-07
FR3038132A1 (fr) 2016-12-30
US9793321B2 (en) 2017-10-17
US20160380030A1 (en) 2016-12-29

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