KR20180084919A - 메모리 동작을 위한 비휘발성 버퍼 - Google Patents
메모리 동작을 위한 비휘발성 버퍼 Download PDFInfo
- Publication number
- KR20180084919A KR20180084919A KR1020187017011A KR20187017011A KR20180084919A KR 20180084919 A KR20180084919 A KR 20180084919A KR 1020187017011 A KR1020187017011 A KR 1020187017011A KR 20187017011 A KR20187017011 A KR 20187017011A KR 20180084919 A KR20180084919 A KR 20180084919A
- Authority
- KR
- South Korea
- Prior art keywords
- memory operation
- volatile buffer
- volatile
- buffer
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/061—Improving I/O performance
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/76—Architectures of general purpose stored program computers
- G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
- G06F15/7839—Architectures of general purpose stored program computers comprising a single central processing unit with memory
- G06F15/7842—Architectures of general purpose stored program computers comprising a single central processing unit with memory on one IC chip (single chip microcontrollers)
- G06F15/7853—Architectures of general purpose stored program computers comprising a single central processing unit with memory on one IC chip (single chip microcontrollers) including a ROM
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0655—Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices
- G06F3/0656—Data buffering arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
- G06F3/0671—In-line storage system
- G06F3/0673—Single storage device
- G06F3/0679—Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]
Landscapes
- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Human Computer Interaction (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Memory System Of A Hierarchy Structure (AREA)
- Memory System (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/947,877 US10719236B2 (en) | 2015-11-20 | 2015-11-20 | Memory controller with non-volatile buffer for persistent memory operations |
US14/947,877 | 2015-11-20 | ||
PCT/GB2016/053596 WO2017085498A1 (en) | 2015-11-20 | 2016-11-18 | Non-volatile buffer for memory operations |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20180084919A true KR20180084919A (ko) | 2018-07-25 |
KR102670903B1 KR102670903B1 (ko) | 2024-05-31 |
Family
ID=57396755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020187017011A KR102670903B1 (ko) | 2015-11-20 | 2016-11-18 | 메모리 동작을 위한 비휘발성 버퍼 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10719236B2 (ko) |
KR (1) | KR102670903B1 (ko) |
CN (1) | CN108292288B (ko) |
GB (1) | GB2559706B (ko) |
WO (1) | WO2017085498A1 (ko) |
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US9978942B2 (en) | 2016-09-20 | 2018-05-22 | Arm Ltd. | Correlated electron switch structures and applications |
US9997242B2 (en) | 2016-10-14 | 2018-06-12 | Arm Ltd. | Method, system and device for non-volatile memory device state detection |
US9899083B1 (en) | 2016-11-01 | 2018-02-20 | Arm Ltd. | Method, system and device for non-volatile memory device operation with low power high speed and high density |
US10121967B2 (en) * | 2016-11-29 | 2018-11-06 | Arm Limited | CEM switching device |
US10002669B1 (en) | 2017-05-10 | 2018-06-19 | Arm Ltd. | Method, system and device for correlated electron switch (CES) device operation |
US10521338B2 (en) * | 2017-06-05 | 2019-12-31 | Arm Ltd. | Method, system and device for memory device operation |
US10211398B2 (en) | 2017-07-03 | 2019-02-19 | Arm Ltd. | Method for the manufacture of a correlated electron material device |
US11194524B2 (en) * | 2017-09-15 | 2021-12-07 | Qualcomm Incorporated | Apparatus and method for performing persistent write operations using a persistent write command |
US10714175B2 (en) | 2017-10-10 | 2020-07-14 | ARM, Ltd. | Method, system and device for testing correlated electron switch (CES) devices |
US10229731B1 (en) | 2017-10-11 | 2019-03-12 | Arm Ltd. | Method, system and circuit for staggered boost injection |
US11137919B2 (en) | 2017-10-30 | 2021-10-05 | Arm Ltd. | Initialisation of a storage device |
US11636316B2 (en) | 2018-01-31 | 2023-04-25 | Cerfe Labs, Inc. | Correlated electron switch elements for brain-based computing |
US10224099B1 (en) | 2018-02-06 | 2019-03-05 | Arm Ltd. | Method, system and device for error correction in reading memory devices |
US10607659B2 (en) | 2018-04-23 | 2020-03-31 | Arm Limited | Method, system and device for integration of bitcells in a volatile memory array and bitcells in a non-volatile memory array |
US10741246B2 (en) | 2018-04-23 | 2020-08-11 | Arm Limited | Method, system and device for integration of volatile and non-volatile memory bitcells |
US10580489B2 (en) | 2018-04-23 | 2020-03-03 | Arm Ltd. | Method, system and device for complementary impedance states in memory bitcells |
US10971229B2 (en) | 2018-04-23 | 2021-04-06 | Arm Limited | Method, system and device for integration of volatile and non-volatile memory bitcells |
US11016669B2 (en) * | 2018-05-01 | 2021-05-25 | Qualcomm Incorporated | Persistent write data for energy-backed memory |
US11011227B2 (en) * | 2018-06-15 | 2021-05-18 | Arm Ltd. | Method, system and device for non-volatile memory device operation |
US11112997B2 (en) | 2018-08-21 | 2021-09-07 | Samsung Electronics Co., Ltd. | Storage device and operating method thereof |
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-
2015
- 2015-11-20 US US14/947,877 patent/US10719236B2/en active Active
-
2016
- 2016-11-18 KR KR1020187017011A patent/KR102670903B1/ko active IP Right Grant
- 2016-11-18 GB GB1808879.9A patent/GB2559706B/en active Active
- 2016-11-18 WO PCT/GB2016/053596 patent/WO2017085498A1/en active Application Filing
- 2016-11-18 CN CN201680067742.3A patent/CN108292288B/zh active Active
Patent Citations (6)
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KR20090078370A (ko) * | 2006-11-08 | 2009-07-17 | 시메트릭스 주식회사 | 저항 스위칭 집적 회로 메모리, 저항 스위칭 메모리의 형성 방법, 저항 스위칭 박막 메모리 구성요소로의 기록 방법 및 비휘발성 저항 스위칭 집적 회로 메모리의 제조 방법 |
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KR20140063660A (ko) * | 2011-07-28 | 2014-05-27 | 넷리스트 인코포레이티드 | 플래시-디램 하이브리드 메모리 모듈 |
KR20140100898A (ko) * | 2013-02-07 | 2014-08-18 | 시게이트 테크놀로지 엘엘씨 | 예기치 않은 전력 상실에 대한 데이터 보호 |
KR20150017672A (ko) * | 2013-08-07 | 2015-02-17 | 시게이트 테크놀로지 엘엘씨 | 톤 라이트 완화 |
Also Published As
Publication number | Publication date |
---|---|
GB2559706B (en) | 2022-01-26 |
CN108292288A (zh) | 2018-07-17 |
US10719236B2 (en) | 2020-07-21 |
WO2017085498A1 (en) | 2017-05-26 |
US20170147207A1 (en) | 2017-05-25 |
KR102670903B1 (ko) | 2024-05-31 |
GB2559706A (en) | 2018-08-15 |
GB201808879D0 (en) | 2018-07-18 |
CN108292288B (zh) | 2022-04-12 |
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