[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR3003397B1 - Structures semi-conductrices dotées de régions actives comprenant de l'INGAN - Google Patents

Structures semi-conductrices dotées de régions actives comprenant de l'INGAN

Info

Publication number
FR3003397B1
FR3003397B1 FR1300823A FR1300823A FR3003397B1 FR 3003397 B1 FR3003397 B1 FR 3003397B1 FR 1300823 A FR1300823 A FR 1300823A FR 1300823 A FR1300823 A FR 1300823A FR 3003397 B1 FR3003397 B1 FR 3003397B1
Authority
FR
France
Prior art keywords
active regions
semiconductor structures
regions including
including ingan
ingan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1300823A
Other languages
English (en)
Other versions
FR3003397A1 (fr
Inventor
Jean Philippe Debray
Chantal Arena
Heather Mcfavilen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to TW103109801A priority Critical patent/TWI648872B/zh
Priority to PCT/EP2014/055316 priority patent/WO2014140371A1/fr
Priority to CN201480015241.1A priority patent/CN105051920A/zh
Priority to CN201480015148.0A priority patent/CN105051921A/zh
Priority to CN201480014065.XA priority patent/CN105051918A/zh
Priority to KR1020157026427A priority patent/KR102120682B1/ko
Priority to KR1020157026564A priority patent/KR20150130331A/ko
Priority to PCT/EP2014/055314 priority patent/WO2014140370A1/fr
Priority to DE112014001352.8T priority patent/DE112014001352T5/de
Priority to JP2015562260A priority patent/JP2016513879A/ja
Priority to DE112014001385.4T priority patent/DE112014001385T5/de
Priority to JP2015562261A priority patent/JP2016517627A/ja
Priority to JP2015562262A priority patent/JP2016513880A/ja
Priority to KR1020157026743A priority patent/KR20150132204A/ko
Priority to PCT/EP2014/055318 priority patent/WO2014140372A1/fr
Priority to DE112014001423.0T priority patent/DE112014001423T5/de
Publication of FR3003397A1 publication Critical patent/FR3003397A1/fr
Application granted granted Critical
Publication of FR3003397B1 publication Critical patent/FR3003397B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H01L21/02507—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
FR1300823A 2013-03-15 2013-04-08 Structures semi-conductrices dotées de régions actives comprenant de l'INGAN Active FR3003397B1 (fr)

Priority Applications (16)

Application Number Priority Date Filing Date Title
TW103109801A TWI648872B (zh) 2013-03-15 2014-03-14 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
DE112014001385.4T DE112014001385T5 (de) 2013-03-15 2014-03-17 Halbleiterlichtemitterstruktur mit einem aktiven Gebiet, das InGaN enthält, und Verfahren für seine Herstellung
CN201480015148.0A CN105051921A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的发光二极管半导体结构体
CN201480014065.XA CN105051918A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体结构体、形成此类半导体结构体的方法以及由此类半导体结构体形成的发光器件
KR1020157026427A KR102120682B1 (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
KR1020157026564A KR20150130331A (ko) 2013-03-15 2014-03-17 Ingan을 포함하는 활성 영역을 가지는 발광 다이오드 반도체 구조
PCT/EP2014/055314 WO2014140370A1 (fr) 2013-03-15 2014-03-17 Structure électroluminescente semi-conductrice ayant une région active comprenant ingan, et son procédé de fabrication
DE112014001352.8T DE112014001352T5 (de) 2013-03-15 2014-03-17 Lichtemitterdioden-Halbleiterstrukturen mit aktiven Gebieten, die InGaN enthalten
PCT/EP2014/055316 WO2014140371A1 (fr) 2013-03-15 2014-03-17 Structures de semi-conducteur ayant des régions actives comprenant de l'ingan, procédés de formation de telles structures de semi-conducteur, et dispositifs électroluminescents formés à partir de telles structures de semi-conducteur
CN201480015241.1A CN105051920A (zh) 2013-03-15 2014-03-17 具有包含InGaN的有源区的半导体发光结构体及其制造方法
JP2015562261A JP2016517627A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体構造、このような半導体構造を形成する方法、及びこのような半導体構造から形成された発光デバイス
JP2015562262A JP2016513880A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している発光ダイオード半導体構造
KR1020157026743A KR20150132204A (ko) 2013-03-15 2014-03-17 InGaN을 포함하는 활성 영역을 가지는 반도체 구조, 그와 같은 반도체 구조를 형성하는 방법, 및 그와 같은 반도체 구조로부터 형성되는 발광 장치
PCT/EP2014/055318 WO2014140372A1 (fr) 2013-03-15 2014-03-17 Structures semi-conductrices de diodes électroluminescentes ayant des régions actives comprenant de l'ingan
DE112014001423.0T DE112014001423T5 (de) 2013-03-15 2014-03-17 Halbleiterstrukturen mit InGaN umfassenden Aktivbereichen, Verfahren zum Bilden derartiger Halbleiterstrukturen und aus derartigen Halbleiterstrukturen gebildete Licht emittierende Vorrichtungen
JP2015562260A JP2016513879A (ja) 2013-03-15 2014-03-17 ＩｎＧａＮを含んでいる活性領域を有している半導体発光構造及びその製造の方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361789792P 2013-03-15 2013-03-15
US201361790085P 2013-03-15 2013-03-15
US201361788441P 2013-03-15 2013-03-15

Publications (2)

Publication Number Publication Date
FR3003397A1 FR3003397A1 (fr) 2014-09-19
FR3003397B1 true FR3003397B1 (fr) 2016-07-22

Family

ID=49546439

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1300823A Active FR3003397B1 (fr) 2013-03-15 2013-04-08 Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
FR1300860A Active FR3003396B1 (fr) 2013-03-15 2013-04-11 Structures semi-conductrices dotees de regions actives comprenant de l'ingan

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1300860A Active FR3003396B1 (fr) 2013-03-15 2013-04-11 Structures semi-conductrices dotees de regions actives comprenant de l'ingan

Country Status (2)

Country Link
US (2) US9117955B2 (fr)
FR (2) FR3003397B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5972798B2 (ja) 2010-03-04 2016-08-17 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア Ｃ方向において＋／−１５度より少ないミスカットを有するｍ面基板上の半極性ｉｉｉ族窒化物光電子デバイス
TWI593135B (zh) 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
TWI648872B (zh) 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
CN105047772B (zh) * 2015-06-08 2018-03-23 中国科学院半导体研究所 绿光led芯片外延层的结构及生长方法
TWI562403B (en) * 2015-11-12 2016-12-11 Playnitride Inc Semiconductor light-emitting device
US10693038B2 (en) * 2017-11-22 2020-06-23 Epistar Corporation Semiconductor device
CN112186080B (zh) * 2020-09-30 2021-10-08 华灿光电(苏州）有限公司 发光二极管外延片的生长方法
CN112467004B (zh) * 2020-10-31 2022-06-07 扬州大学 一种包含电子存储层的GaN基LED外延结构及其生长方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
US6600175B1 (en) 1996-03-26 2003-07-29 Advanced Technology Materials, Inc. Solid state white light emitter and display using same
FR2755537B1 (fr) 1996-11-05 1999-03-05 Commissariat Energie Atomique Procede de fabrication d'un film mince sur un support et structure ainsi obtenue
JP3679914B2 (ja) * 1997-02-12 2005-08-03 株式会社東芝 半導体発光装置及びその製造方法
FR2767416B1 (fr) 1997-08-12 1999-10-01 Commissariat Energie Atomique Procede de fabrication d'un film mince de materiau solide
FR2773261B1 (fr) 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
FR2795865B1 (fr) 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'un film mince utilisant une mise sous pression
FR2818010B1 (fr) 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
JP3864735B2 (ja) * 2000-12-28 2007-01-10 ソニー株式会社 半導体発光素子およびその製造方法
JP4441563B2 (ja) * 2000-12-28 2010-03-31 日亜化学工業株式会社 窒化物半導体レーザ素子
US7058105B2 (en) 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device
KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100670531B1 (ko) 2004-08-26 2007-01-16 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100765004B1 (ko) 2004-12-23 2007-10-09 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2008535215A (ja) * 2005-03-24 2008-08-28 エージェンシー フォー サイエンス，テクノロジー アンド リサーチ Ｉｉｉ族窒化物白色発光ダイオード
CN100550443C (zh) * 2005-07-06 2009-10-14 Lg伊诺特有限公司 氮化物半导体led及其制造方法
CN101449394A (zh) 2006-05-26 2009-06-03 罗姆股份有限公司 氮化物半导体发光元件
WO2007138658A1 (fr) * 2006-05-26 2007-12-06 Rohm Co., Ltd. Dispositif électroluminescent à semi-conducteurs de nitrure
JP2009021361A (ja) * 2007-07-11 2009-01-29 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
US8546846B2 (en) * 2007-08-20 2013-10-01 Samsung Electronics Co., Ltd. Nitride semiconductor light emitting device
EP2325899A4 (fr) * 2008-08-29 2015-04-29 Toshiba Kk Dispositif semi-conducteur
JP2012514316A (ja) 2008-09-24 2012-06-21 エス・オー・アイ・テック・シリコン・オン・インシュレーター・テクノロジーズ 半導体材料、半導体構造、デバイスおよびそれらを含む加工された基板の緩和した層を形成する方法
JP5077303B2 (ja) * 2008-10-07 2012-11-21 住友電気工業株式会社 窒化ガリウム系半導体発光素子、窒化ガリウム系半導体発光素子を作製する方法、窒化ガリウム系発光ダイオード、エピタキシャルウエハ、及び窒化ガリウム系発光ダイオードを作製する方法
EP2345060B1 (fr) 2008-10-30 2013-12-04 Soitec Procédés de formation de couches de matériau semi-conducteur présentant une contrainte de réseau cristallin réduite et substrats manufacturés les comprenant
US8227791B2 (en) * 2009-01-23 2012-07-24 Invenlux Limited Strain balanced light emitting devices
WO2011022724A1 (fr) * 2009-08-21 2011-02-24 The Regents Of The University Of California Dispositifs semi-polaires à base de nitrure sur des alliages partiellement ou entièrement relaxés avec dislocations d’inadaptation au niveau de l’hétéro-interface
US8975165B2 (en) 2011-02-17 2015-03-10 Soitec III-V semiconductor structures with diminished pit defects and methods for forming the same
US8148252B1 (en) 2011-03-02 2012-04-03 S.O.I. Tec Silicon On Insulator Technologies Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods
US8471243B1 (en) 2012-01-31 2013-06-25 Soitec Photoactive devices with improved distribution of charge carriers, and methods of forming same
TWI648872B (zh) * 2013-03-15 2019-01-21 法商梭意泰科公司 具有包含ＩｎＧａＮ之作用區域之半導體結構、形成此等半導體結構之方法及由此等半導體結構所形成之發光裝置
FR3003397B1 (fr) * 2013-03-15 2016-07-22 Soitec Silicon On Insulator Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
TWI593135B (zh) * 2013-03-15 2017-07-21 索泰克公司 具有含氮化銦鎵之主動區域之半導體結構，形成此等半導體結構之方法，以及應用此等半導體結構形成之發光元件

Also Published As

Publication number Publication date
US9397258B2 (en) 2016-07-19
US20150333219A1 (en) 2015-11-19
FR3003397A1 (fr) 2014-09-19
US9117955B2 (en) 2015-08-25
FR3003396B1 (fr) 2016-07-22
FR3003396A1 (fr) 2014-09-19
US20140264265A1 (en) 2014-09-18

Similar Documents

Publication Publication Date Title
FR3003397B1 (fr) Structures semi-conductrices dotées de régions actives comprenant de l'INGAN
BR112015020889A2 (pt) microcápsulas compreendendo agentes de proteção solar
CL2016000680A1 (es) Formulaciones de anticuerpos anti-pdl1.
BR302012005339S1 (pt) "configuração aplicada em pote".
CL2016000126A1 (es) Compuestos plaguicidas.
JP2014153700A5 (fr)
DK3411008T3 (da) Sammensætninger omfattende aktive solbeskyttelsesmidler med polyhydroxyfulleren
FR3008874B1 (fr) Element d'assise ameliore pour siege
JP2014223046A5 (fr)
BR302013001547S1 (pt) "configuração aplicada em farol"
JP2014153698A5 (fr)
FR3013181B1 (fr) Piege pour animaux nuisibles, notamment rats et souris
JP2014240779A5 (fr)
FR3009885B3 (fr) Agencement d'enroulement
JP2015117509A5 (fr)
FR3004585B1 (fr) Structures semi-conductrices dotees de regions actives comprenant de l'ingan
FI20135236A (fi) Haudutin
BR302013000786S1 (pt) ''configuraçaõ aplicada em móvel estofado''
UA27025S (uk) Мармелад «фруктовий колобок»
BR302013002174S1 (pt) "configuração aplicada em berço"
TH1401007610A (th) องค์ประกอบที่ประกอบด้วยสารออกฤทธิ์ทางชีวภาพ
UA28051S (uk) Снек «бульбарики»
UA28052S (uk) Снек «беконтик»
UA24784S (uk) Сир «міміно»
UA26439S (uk) Упаковка фігурна «domi»

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 4

PLFP Fee payment

Year of fee payment: 5

PLFP Fee payment

Year of fee payment: 6

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12