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FR2903226B1 - Transistor en couche mince,son procede de fabrication et dispositif d'affichage comportant un tel transistor. - Google Patents

Transistor en couche mince,son procede de fabrication et dispositif d'affichage comportant un tel transistor.

Info

Publication number
FR2903226B1
FR2903226B1 FR0610454A FR0610454A FR2903226B1 FR 2903226 B1 FR2903226 B1 FR 2903226B1 FR 0610454 A FR0610454 A FR 0610454A FR 0610454 A FR0610454 A FR 0610454A FR 2903226 B1 FR2903226 B1 FR 2903226B1
Authority
FR
France
Prior art keywords
transistor
display device
thin film
manufacturing same
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0610454A
Other languages
English (en)
Other versions
FR2903226A1 (fr
Inventor
Gee Sung Chae
Jae Seok Heo
Woog Gi Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Display Co Ltd
Original Assignee
LG Philips LCD Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Philips LCD Co Ltd filed Critical LG Philips LCD Co Ltd
Publication of FR2903226A1 publication Critical patent/FR2903226A1/fr
Application granted granted Critical
Publication of FR2903226B1 publication Critical patent/FR2903226B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H01L29/4908—
    • H01L27/1214—
    • H01L29/458—
    • H01L29/66765—
    • H01L29/78669—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H10K10/476—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure comprising at least one organic layer and at least one inorganic layer
    • H01L27/1248—
    • H01L27/1292—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Formation Of Insulating Films (AREA)
FR0610454A 2006-06-30 2006-11-30 Transistor en couche mince,son procede de fabrication et dispositif d'affichage comportant un tel transistor. Active FR2903226B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060061432A KR101243809B1 (ko) 2006-06-30 2006-06-30 박막트랜지스터의 제조방법 및 이를 이용한 ｔｆｔ 어레이기판의 제조방법

Publications (2)

Publication Number Publication Date
FR2903226A1 FR2903226A1 (fr) 2008-01-04
FR2903226B1 true FR2903226B1 (fr) 2013-08-02

Family

ID=38825390

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0610454A Active FR2903226B1 (fr) 2006-06-30 2006-11-30 Transistor en couche mince,son procede de fabrication et dispositif d'affichage comportant un tel transistor.

Country Status (7)

Country Link
US (2) US7679085B2 (fr)
JP (1) JP5209203B2 (fr)
KR (1) KR101243809B1 (fr)
CN (1) CN100541742C (fr)
DE (1) DE102006055329B4 (fr)
FR (1) FR2903226B1 (fr)
TW (1) TWI332709B (fr)

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CN102779942B (zh) * 2011-05-24 2015-11-25 京东方科技集团股份有限公司 一种有机薄膜晶体管阵列基板及其制作方法
KR20130052216A (ko) * 2011-11-11 2013-05-22 한국전자통신연구원 박막 트랜지스터 및 그 제조방법
JP2013115098A (ja) * 2011-11-25 2013-06-10 Sony Corp トランジスタ、トランジスタの製造方法、表示装置および電子機器
TWI584383B (zh) 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI500162B (zh) * 2012-04-03 2015-09-11 E Ink Holdings Inc 薄膜電晶體及其製造方法
CN103367458B (zh) * 2012-04-03 2017-03-01 元太科技工业股份有限公司 薄膜晶体管及其制造方法
JP2014056850A (ja) * 2012-09-11 2014-03-27 Sony Corp トランジスタおよびその製造方法、並びに半導体装置の製造方法および表示装置の製造方法
CN103296034A (zh) * 2013-05-28 2013-09-11 京东方科技集团股份有限公司 一种阵列基板、制备方法以及显示装置
CN103456745B (zh) * 2013-09-10 2016-09-07 北京京东方光电科技有限公司 一种阵列基板及其制备方法、显示装置
CN103489766A (zh) * 2013-09-16 2014-01-01 复旦大学 一种氧化镁钛高介电常数薄膜及其制备方法和应用
CN104795496A (zh) * 2015-04-08 2015-07-22 深圳市华星光电技术有限公司 双栅极器件以及双栅极器件的制造方法
KR102450399B1 (ko) * 2015-10-06 2022-09-30 삼성전자주식회사 박막 트랜지스터, 그 제조 방법, 그리고 상기 박막 트랜지스터를 포함하는 전자 장치
US10388895B2 (en) * 2017-11-07 2019-08-20 Shenzhen China Star Optoelectonics Semiconductor Display Technology Co., Ltd. Organic thin film transistor with charge injection layer and manufacturing method thereof
CN107945728A (zh) * 2017-12-15 2018-04-20 京东方科技集团股份有限公司 一种显示基板、显示基板的制作方法及显示装置
JP2019179861A (ja) * 2018-03-30 2019-10-17 株式会社リコー 電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
CN109742091B (zh) 2019-01-10 2021-08-31 京东方科技集团股份有限公司 显示基板及其制备方法、显示装置
CN110164878B (zh) * 2019-06-10 2022-05-03 惠科股份有限公司 阵列基板及其制备方法
KR102199223B1 (ko) 2019-06-19 2021-01-06 광운대학교 산학협력단 저온 용액 공정 기반의 하이브리드 이중층 구조를 갖는 고성능 양극성 트랜지스터의 제조 방법
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JP4785396B2 (ja) * 2004-03-26 2011-10-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
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Also Published As

Publication number Publication date
US20080001151A1 (en) 2008-01-03
DE102006055329A1 (de) 2008-01-17
US7679085B2 (en) 2010-03-16
JP2008016807A (ja) 2008-01-24
US20100136755A1 (en) 2010-06-03
CN101097868A (zh) 2008-01-02
FR2903226A1 (fr) 2008-01-04
KR20080002545A (ko) 2008-01-04
DE102006055329B4 (de) 2016-09-15
KR101243809B1 (ko) 2013-03-18
US8129233B2 (en) 2012-03-06
CN100541742C (zh) 2009-09-16
TWI332709B (en) 2010-11-01
TW200802885A (en) 2008-01-01
JP5209203B2 (ja) 2013-06-12

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