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FR2977974B1 - Procede de mesure de defauts dans un substrat de silicium - Google Patents

Procede de mesure de defauts dans un substrat de silicium

Info

Publication number
FR2977974B1
FR2977974B1 FR1156380A FR1156380A FR2977974B1 FR 2977974 B1 FR2977974 B1 FR 2977974B1 FR 1156380 A FR1156380 A FR 1156380A FR 1156380 A FR1156380 A FR 1156380A FR 2977974 B1 FR2977974 B1 FR 2977974B1
Authority
FR
France
Prior art keywords
silicon substrate
measuring defects
defects
measuring
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1156380A
Other languages
English (en)
Other versions
FR2977974A1 (fr
Inventor
Patrick Reynaud
Christophe Gourdel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1156380A priority Critical patent/FR2977974B1/fr
Priority to US13/547,763 priority patent/US9244019B2/en
Publication of FR2977974A1 publication Critical patent/FR2977974A1/fr
Application granted granted Critical
Publication of FR2977974B1 publication Critical patent/FR2977974B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26533Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00Sampling; Preparing specimens for investigation
    • G01N1/28Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4795Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
FR1156380A 2011-07-13 2011-07-13 Procede de mesure de defauts dans un substrat de silicium Active FR2977974B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1156380A FR2977974B1 (fr) 2011-07-13 2011-07-13 Procede de mesure de defauts dans un substrat de silicium
US13/547,763 US9244019B2 (en) 2011-07-13 2012-07-12 Method for measuring defects in a silicon substrate by applying a heat treatment which consolidates and enlarges the defects

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1156380A FR2977974B1 (fr) 2011-07-13 2011-07-13 Procede de mesure de defauts dans un substrat de silicium

Publications (2)

Publication Number Publication Date
FR2977974A1 FR2977974A1 (fr) 2013-01-18
FR2977974B1 true FR2977974B1 (fr) 2014-03-07

Family

ID=44543544

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1156380A Active FR2977974B1 (fr) 2011-07-13 2011-07-13 Procede de mesure de defauts dans un substrat de silicium

Country Status (2)

Country Link
US (1) US9244019B2 (fr)
FR (1) FR2977974B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2987682B1 (fr) 2012-03-05 2014-11-21 Soitec Silicon On Insulator Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure
FR2999801B1 (fr) 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
JP5814958B2 (ja) * 2013-02-21 2015-11-17 株式会社東芝 テンプレート作製方法、テンプレート検査方法、及びテンプレート材料
KR101759876B1 (ko) 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
CN108010863B (zh) * 2017-12-07 2021-10-01 武汉新芯集成电路制造有限公司 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645813A (en) * 1979-09-25 1981-04-25 Nitto Chem Ind Co Ltd Separation of tellurium
US4437922A (en) * 1982-03-26 1984-03-20 International Business Machines Corporation Method for tailoring oxygen precipitate particle density and distribution silicon wafers
DE4490103T1 (de) * 1993-01-06 1997-07-24 Nippon Steel Corp Verfahren und Vorrichtung zum Vorherbestimmen der Kristallqualität eines Halbleiter- Einkristalls
US5611855A (en) * 1995-01-31 1997-03-18 Seh America, Inc. Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth
JP2002524845A (ja) * 1998-09-02 2002-08-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体
JP4604889B2 (ja) * 2005-05-25 2011-01-05 株式会社Sumco シリコンウェーハの製造方法、並びにシリコン単結晶育成方法
FR2899380B1 (fr) * 2006-03-31 2008-08-29 Soitec Sa Procede de revelation de defauts cristallins dans un substrat massif.
EP2309038B1 (fr) * 2009-10-08 2013-01-02 Siltronic AG procédé de fabrication d'une tranche épitaxiale

Also Published As

Publication number Publication date
US20130045583A1 (en) 2013-02-21
US9244019B2 (en) 2016-01-26
FR2977974A1 (fr) 2013-01-18

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