FR2977974B1 - Procede de mesure de defauts dans un substrat de silicium - Google Patents
Procede de mesure de defauts dans un substrat de siliciumInfo
- Publication number
- FR2977974B1 FR2977974B1 FR1156380A FR1156380A FR2977974B1 FR 2977974 B1 FR2977974 B1 FR 2977974B1 FR 1156380 A FR1156380 A FR 1156380A FR 1156380 A FR1156380 A FR 1156380A FR 2977974 B1 FR2977974 B1 FR 2977974B1
- Authority
- FR
- France
- Prior art keywords
- silicon substrate
- measuring defects
- defects
- measuring
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26533—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically inactive species in silicon to make buried insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N21/4795—Scattering, i.e. diffuse reflection spatially resolved investigating of object in scattering medium
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156380A FR2977974B1 (fr) | 2011-07-13 | 2011-07-13 | Procede de mesure de defauts dans un substrat de silicium |
US13/547,763 US9244019B2 (en) | 2011-07-13 | 2012-07-12 | Method for measuring defects in a silicon substrate by applying a heat treatment which consolidates and enlarges the defects |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156380A FR2977974B1 (fr) | 2011-07-13 | 2011-07-13 | Procede de mesure de defauts dans un substrat de silicium |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2977974A1 FR2977974A1 (fr) | 2013-01-18 |
FR2977974B1 true FR2977974B1 (fr) | 2014-03-07 |
Family
ID=44543544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1156380A Active FR2977974B1 (fr) | 2011-07-13 | 2011-07-13 | Procede de mesure de defauts dans un substrat de silicium |
Country Status (2)
Country | Link |
---|---|
US (1) | US9244019B2 (fr) |
FR (1) | FR2977974B1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2987682B1 (fr) | 2012-03-05 | 2014-11-21 | Soitec Silicon On Insulator | Procede de test d'une structure semi-conducteur sur isolant et application dudit test pour la fabrication d'une telle structure |
FR2999801B1 (fr) | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
JP5814958B2 (ja) * | 2013-02-21 | 2015-11-17 | 株式会社東芝 | テンプレート作製方法、テンプレート検査方法、及びテンプレート材料 |
KR101759876B1 (ko) | 2015-07-01 | 2017-07-31 | 주식회사 엘지실트론 | 웨이퍼 및 웨이퍼 결함 분석 방법 |
CN108010863B (zh) * | 2017-12-07 | 2021-10-01 | 武汉新芯集成电路制造有限公司 | 凹陷缺陷的检测方法以及用于检测凹陷缺陷的晶圆 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5645813A (en) * | 1979-09-25 | 1981-04-25 | Nitto Chem Ind Co Ltd | Separation of tellurium |
US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
DE4490103T1 (de) * | 1993-01-06 | 1997-07-24 | Nippon Steel Corp | Verfahren und Vorrichtung zum Vorherbestimmen der Kristallqualität eines Halbleiter- Einkristalls |
US5611855A (en) * | 1995-01-31 | 1997-03-18 | Seh America, Inc. | Method for manufacturing a calibration wafer having a microdefect-free layer of a precisely predetermined depth |
JP2002524845A (ja) * | 1998-09-02 | 2002-08-06 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 欠陥密度が低い単結晶シリコンから得られるシリコン・オン・インシュレーター構造体 |
JP4604889B2 (ja) * | 2005-05-25 | 2011-01-05 | 株式会社Sumco | シリコンウェーハの製造方法、並びにシリコン単結晶育成方法 |
FR2899380B1 (fr) * | 2006-03-31 | 2008-08-29 | Soitec Sa | Procede de revelation de defauts cristallins dans un substrat massif. |
EP2309038B1 (fr) * | 2009-10-08 | 2013-01-02 | Siltronic AG | procédé de fabrication d'une tranche épitaxiale |
-
2011
- 2011-07-13 FR FR1156380A patent/FR2977974B1/fr active Active
-
2012
- 2012-07-12 US US13/547,763 patent/US9244019B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20130045583A1 (en) | 2013-02-21 |
US9244019B2 (en) | 2016-01-26 |
FR2977974A1 (fr) | 2013-01-18 |
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Legal Events
Date | Code | Title | Description |
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CD | Change of name or company name |
Owner name: SOITEC, FR Effective date: 20130208 |
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