[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

FR2964788B1 - Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant - Google Patents

Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant

Info

Publication number
FR2964788B1
FR2964788B1 FR1057211A FR1057211A FR2964788B1 FR 2964788 B1 FR2964788 B1 FR 2964788B1 FR 1057211 A FR1057211 A FR 1057211A FR 1057211 A FR1057211 A FR 1057211A FR 2964788 B1 FR2964788 B1 FR 2964788B1
Authority
FR
France
Prior art keywords
substrate
processing
determined wavelength
light flow
corresponding substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1057211A
Other languages
English (en)
Other versions
FR2964788A1 (fr
Inventor
Michel Bruel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1057211A priority Critical patent/FR2964788B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to PCT/EP2011/065259 priority patent/WO2012031998A1/fr
Priority to US13/818,235 priority patent/US9190314B2/en
Priority to CN2011800433924A priority patent/CN103201825A/zh
Priority to EP11751609.6A priority patent/EP2614519B1/fr
Priority to KR1020137005906A priority patent/KR101918166B1/ko
Priority to JP2013527562A priority patent/JP5952281B2/ja
Publication of FR2964788A1 publication Critical patent/FR2964788A1/fr
Application granted granted Critical
Publication of FR2964788B1 publication Critical patent/FR2964788B1/fr
Priority to US14/932,349 priority patent/US9564496B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Laser Beam Processing (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR1057211A 2010-09-10 2010-09-10 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant Expired - Fee Related FR2964788B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1057211A FR2964788B1 (fr) 2010-09-10 2010-09-10 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
US13/818,235 US9190314B2 (en) 2010-09-10 2011-09-05 Process for treating a substrate using a luminous flux of determined wavelength, and corresponding substrate
CN2011800433924A CN103201825A (zh) 2010-09-10 2011-09-05 应用确定波长的光通量处理衬底的工艺以及相应衬底
EP11751609.6A EP2614519B1 (fr) 2010-09-10 2011-09-05 Procede de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde determinee
PCT/EP2011/065259 WO2012031998A1 (fr) 2010-09-10 2011-09-05 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
KR1020137005906A KR101918166B1 (ko) 2010-09-10 2011-09-20 결정된 파장의 광속을 이용하여 기판을 처리하기 위한 프로세스 및 대응하는 기판
JP2013527562A JP5952281B2 (ja) 2010-09-10 2011-09-20 特定波長の光束を用いて基板を処理する方法および対応する基板
US14/932,349 US9564496B2 (en) 2010-09-10 2015-11-04 Process for treating a substrate using a luminous flux of determined wavelength, and corresponding substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1057211A FR2964788B1 (fr) 2010-09-10 2010-09-10 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant

Publications (2)

Publication Number Publication Date
FR2964788A1 FR2964788A1 (fr) 2012-03-16
FR2964788B1 true FR2964788B1 (fr) 2015-05-15

Family

ID=43920828

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1057211A Expired - Fee Related FR2964788B1 (fr) 2010-09-10 2010-09-10 Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant

Country Status (7)

Country Link
US (2) US9190314B2 (fr)
EP (1) EP2614519B1 (fr)
JP (1) JP5952281B2 (fr)
KR (1) KR101918166B1 (fr)
CN (1) CN103201825A (fr)
FR (1) FR2964788B1 (fr)
WO (1) WO2012031998A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2964788B1 (fr) 2010-09-10 2015-05-15 Soitec Silicon On Insulator Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR757986A (fr) 1932-07-04 1934-01-05 Thomson Houston Comp Francaise Perfectionnements aux tubes électroniques et à leurs circuits
US4234356A (en) 1979-06-01 1980-11-18 Bell Telephone Laboratories, Incorporated Dual wavelength optical annealing of materials
US4456490A (en) * 1983-03-09 1984-06-26 Westinghouse Electric Corp. Laser annealing of MIS devices by back surface laser treatment
JP2008135436A (ja) * 2006-11-27 2008-06-12 Seiko Epson Corp 剥離方法、半導体デバイス及び電子機器
JP5286684B2 (ja) * 2007-03-28 2013-09-11 セイコーエプソン株式会社 薄膜層の剥離方法、薄膜デバイスの転写方法
FR2921752B1 (fr) 2007-10-01 2009-11-13 Aplinov Procede de chauffage d'une plaque par un flux lumineux.
FR2938116B1 (fr) * 2008-11-04 2011-03-11 Aplinov Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.
FR2964788B1 (fr) 2010-09-10 2015-05-15 Soitec Silicon On Insulator Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant

Also Published As

Publication number Publication date
US20130154065A1 (en) 2013-06-20
US20160056247A1 (en) 2016-02-25
FR2964788A1 (fr) 2012-03-16
KR20140019281A (ko) 2014-02-14
WO2012031998A1 (fr) 2012-03-15
EP2614519B1 (fr) 2015-07-01
EP2614519A1 (fr) 2013-07-17
CN103201825A (zh) 2013-07-10
US9190314B2 (en) 2015-11-17
JP2013541197A (ja) 2013-11-07
US9564496B2 (en) 2017-02-07
KR101918166B1 (ko) 2018-11-13
JP5952281B2 (ja) 2016-07-13

Similar Documents

Publication Publication Date Title
DK2679977T3 (da) Fremgangsmåde og indretning til måling af inter-kerne krydstale af en optisk flerkernefiber
DK2027158T3 (da) Metode til immunisering af en fugleart
DK2422297T3 (da) Indretning og fremgangsmåde til registrering af en plante
DK2229755T3 (da) System, fremgangsmåde og software til konfiguration af husautomatisering ved et salgssted for en automatiseringsindretning
FR2974746B1 (fr) Procede de nettoyage et de decapage d'une aube de turbomoteur au moyen d'un laser impulsionnel
FI20075507A0 (fi) Menetelmä optisen tuotteen valmistamiseksi ja laitteisto
BRPI1014112A2 (pt) fluxímetro magnético para medir fluxo de um fluxo de fluido de processo, e, método para medir fluxo de um fluido de processo.
FI20106091A (fi) Paketoitu kuituoptinen komponentti ja menetelmä sen valmistamiseksi
FR2969664B1 (fr) Procede de clivage d'un substrat
SE0800189L (sv) Anordning för debridering av implantat, och en metod för debridering av implantat med användning av anordningen
FR2968431B1 (fr) Procédé de fabrication d'un dispositif a microcircuit
DK2844784T3 (da) Anordning og fremgangsmåde til overfladebehandling af et substrat og fremgangsmåde til fremstilling af en optoelektronisk komponent
EP2687883A4 (fr) Fibre optique, système de transmission de lumière et procédé de mesure pour fibre optique
DK2479150T3 (da) Præform til optisk fiber, optisk fiber og en fremgangsmåde til fremstilling af præform til optisk fiber
FR2968776B1 (fr) Procédé pour réaliser un guide optique a fente sur silicium
DK2398747T3 (da) Fremgangsmåde til fremstilling og behandling af en præform, præform og optisk fiber
DK2331473T3 (da) Fremgangsmåde til fremstilling af en mikrostruktureret optisk fiber og fremgangsmåde og system til online kontrol af en mikrostruktureret optisk fiber
DE602009000589D1 (de) Vorrichtung zum Bearbeiten von Brillengläsern
DK2149632T3 (da) Fremgangsmåde til belægning af dentalbånd
FR2964788B1 (fr) Procédé de traitement d'un substrat au moyen d'un flux lumineux de longueur d'onde déterminée, et substrat correspondant
FR2981871B1 (fr) Procede de polissage d'un substrat
FI20085283A (fi) Menetelmä kaasujen mittaamiseksi
DK2310309T3 (da) Optisk kontrolfremgangsmåde til detektion af trykte produkter under viderebearbejdning af tryksager
DE102009044227B8 (de) Inspektionsvorrichtung und -verfahren für optische Disketten
BR112013020350A2 (pt) dispositivo de transmissão ótica, sistema de transmissão ótica, método de transmissão ótica e programa capaz de ser executado por um computador

Legal Events

Date Code Title Description
CD Change of name or company name

Owner name: SOITEC, FR

Effective date: 20120423

PLFP Fee payment

Year of fee payment: 7

PLFP Fee payment

Year of fee payment: 8

PLFP Fee payment

Year of fee payment: 9

PLFP Fee payment

Year of fee payment: 10

ST Notification of lapse

Effective date: 20210505