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FR2818627B1 - Composant de micromecanique et procede de fabrication d'un tel composant - Google Patents

Composant de micromecanique et procede de fabrication d'un tel composant

Info

Publication number
FR2818627B1
FR2818627B1 FR0116669A FR0116669A FR2818627B1 FR 2818627 B1 FR2818627 B1 FR 2818627B1 FR 0116669 A FR0116669 A FR 0116669A FR 0116669 A FR0116669 A FR 0116669A FR 2818627 B1 FR2818627 B1 FR 2818627B1
Authority
FR
France
Prior art keywords
component
manufacturing
micromechanical
micromechanical component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0116669A
Other languages
English (en)
Other versions
FR2818627A1 (fr
Inventor
Frank Fischer
Lars Metzger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of FR2818627A1 publication Critical patent/FR2818627A1/fr
Application granted granted Critical
Publication of FR2818627B1 publication Critical patent/FR2818627B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00563Avoid or control over-etching
    • B81C1/00571Avoid or control under-cutting
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802Details
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0228Inertial sensors
    • B81B2201/0235Accelerometers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00Basic microelectromechanical structures
    • B81B2203/03Static structures
    • B81B2203/0323Grooves
    • B81B2203/033Trenches
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/01Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0102Surface micromachining
    • B81C2201/0105Sacrificial layer
    • B81C2201/0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
  • Preparation Of Compounds By Using Micro-Organisms (AREA)
FR0116669A 2000-12-23 2001-12-21 Composant de micromecanique et procede de fabrication d'un tel composant Expired - Fee Related FR2818627B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10065013A DE10065013B4 (de) 2000-12-23 2000-12-23 Verfahren zum Herstellen eines mikromechanischen Bauelements

Publications (2)

Publication Number Publication Date
FR2818627A1 FR2818627A1 (fr) 2002-06-28
FR2818627B1 true FR2818627B1 (fr) 2006-02-03

Family

ID=7668980

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0116669A Expired - Fee Related FR2818627B1 (fr) 2000-12-23 2001-12-21 Composant de micromecanique et procede de fabrication d'un tel composant

Country Status (5)

Country Link
US (1) US6686638B2 (fr)
JP (1) JP4603740B2 (fr)
DE (1) DE10065013B4 (fr)
FR (1) FR2818627B1 (fr)
IT (1) ITMI20012762A1 (fr)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004059911A1 (de) * 2004-12-13 2006-06-14 Robert Bosch Gmbh Verfahren zum Bilden eines Grabens in einer Mikrostruktur
US7205226B1 (en) * 2005-02-24 2007-04-17 Lam Research Corporation Sacrificial layer for protection during trench etch
US7560789B2 (en) 2005-05-27 2009-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4519804B2 (ja) * 2005-05-27 2010-08-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4799059B2 (ja) * 2005-06-27 2011-10-19 株式会社東芝 半導体装置
JP2007071805A (ja) * 2005-09-09 2007-03-22 Denso Corp 力学量センサの製造方法
KR20080068821A (ko) * 2005-09-30 2008-07-24 퀄컴 엠이엠스 테크놀로지스, 인크. Mems 장치 및 해당 장치용의 접속부
US20070128758A1 (en) * 2005-12-01 2007-06-07 Keisuke Tanaka Semiconductor device and method for fabricating the same
DE102006011545B4 (de) * 2006-03-14 2016-03-17 Robert Bosch Gmbh Mikromechanisches Kombi-Bauelement und entsprechendes Herstellungsverfahren
DE102006032195A1 (de) * 2006-07-12 2008-01-24 Robert Bosch Gmbh Verfahren zur Herstellung von MEMS-Strukturen
DE102006059084B4 (de) * 2006-12-14 2022-05-05 Robert Bosch Gmbh Mikromechanisches Bauelement mit integrierten passiven elektronischen Bauelementen und Verfahren zu seiner Herstellung
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US7948015B2 (en) 2006-12-14 2011-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
EP2109888A2 (fr) * 2007-01-17 2009-10-21 Nxp B.V. Système dans un boîtier doté de trous d'interconnexion traversant le substrat
JP5317154B2 (ja) * 2007-06-07 2013-10-16 独立行政法人 宇宙航空研究開発機構 多軸慣性駆動型アクチュエータ
DE102007031562B4 (de) * 2007-07-06 2024-01-18 Robert Bosch Gmbh Gehäuse mit einem elektrischen Modul
DE102007061096A1 (de) * 2007-12-19 2009-06-25 Robert Bosch Gmbh Mikromechanisches Bauelement mit auslenkfähigem Element
US8499629B2 (en) * 2008-10-10 2013-08-06 Honeywell International Inc. Mounting system for torsional suspension of a MEMS device
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
US7943525B2 (en) * 2008-12-19 2011-05-17 Freescale Semiconductor, Inc. Method of producing microelectromechanical device with isolated microstructures
US9940208B2 (en) 2009-02-27 2018-04-10 Red Hat, Inc. Generating reverse installation file for network restoration
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US9047155B2 (en) 2009-06-30 2015-06-02 Red Hat, Inc. Message-based installation management using message bus
DE102010000864B4 (de) * 2010-01-13 2017-11-02 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
DE102010001021B4 (de) 2010-01-19 2019-05-09 Robert Bosch Gmbh Mikromechanisches Bauelement und entsprechendes Herstellungsverfahren
CN103392233B (zh) 2010-06-30 2016-08-24 生命科技公司 阵列列积分器
CN103080739B (zh) 2010-06-30 2016-12-21 生命科技公司 用于测试isfet阵列的方法和装置
US8858782B2 (en) 2010-06-30 2014-10-14 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
CN103168341B (zh) 2010-07-03 2016-10-05 生命科技公司 具有轻度掺杂的排出装置的化学敏感的传感器
WO2012036679A1 (fr) 2010-09-15 2012-03-22 Life Technologies Corporation Procédés et appareil de mesure d'analytes
US8685324B2 (en) 2010-09-24 2014-04-01 Life Technologies Corporation Matched pair transistor circuits
JP5778914B2 (ja) * 2010-11-04 2015-09-16 キヤノン株式会社 電気機械変換装置の製造方法
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
EP2634154A1 (fr) 2012-02-28 2013-09-04 Omya Development AG Procédé de préparation de ciment, mortiers, compositions de béton contenant un agent de remplissage à base de carbonate de calcium traité avec un agent de remplissage ultrafin et un superplastifiant, compositions et produits de ciment obtenus et leurs applications
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
EP2972281B1 (fr) 2013-03-15 2023-07-26 Life Technologies Corporation Dispositif chimique avec un élément conducteur
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
US20140264472A1 (en) 2013-03-15 2014-09-18 Life Technologies Corporation Chemical sensor with consistent sensor surface areas
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
DE102013107947A1 (de) 2013-07-25 2015-02-19 Acquandas GmbH Verfahren zur Herstellung einer medizinischen Vorrichtung, Verfahren zum Modifizieren der Oberfläche einer medizinischen Vorrichtung, medizinische Vorrichtung und Schichtverbund mit einem Substrat
TWI684004B (zh) 2014-12-18 2020-02-01 美商生命技術公司 用於使用大規模fet陣列量測分析物之方法及設備
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
TWI832669B (zh) 2014-12-18 2024-02-11 美商生命技術公司 具有傳輸器組態的高資料速率積體電路
DE102015226155A1 (de) 2015-12-21 2017-06-22 Robert Bosch Gmbh Verfahren zur Herstellung eines Schockdetektors und ein solcher Schockdetektor
CN112055694B (zh) * 2018-04-25 2023-12-19 希奥检测有限公司 具有温度稳定输出的电容式传感器

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8921722D0 (en) * 1989-09-26 1989-11-08 British Telecomm Micromechanical switch
US5677560A (en) * 1990-05-29 1997-10-14 Fraunhofer Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Micromechanical component and process for the fabrication thereof
DE4221432C2 (de) * 1992-06-30 1994-06-09 Siemens Ag Globales Planarisierungsverfahren für integrierte Halbleiterschaltungen oder mikromechanische Bauteile
US5461916A (en) * 1992-08-21 1995-10-31 Nippondenso Co., Ltd. Mechanical force sensing semiconductor device
DE4241045C1 (de) * 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE4316856A1 (de) * 1993-05-19 1994-11-24 Siemens Ag Mikromechanisches Bauteil und Verfahren zu seiner Herstellung
DE4317274A1 (de) * 1993-05-25 1994-12-01 Bosch Gmbh Robert Verfahren zur Herstellung oberflächen-mikromechanischer Strukturen
DE4332057A1 (de) * 1993-09-21 1995-03-30 Siemens Ag Integrierte mikromechanische Sensorvorrichtung und Verfahren zu deren Herstellung
DE4418163B4 (de) * 1994-05-25 2007-04-05 Robert Bosch Gmbh Verfahren zur Herstellung von mikromechanischen Strukturen
DE19537814B4 (de) * 1995-10-11 2009-11-19 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
JP3430771B2 (ja) * 1996-02-05 2003-07-28 株式会社デンソー 半導体力学量センサの製造方法
DE19621996C2 (de) * 1996-05-31 1998-04-09 Siemens Ag Verfahren zur Herstellung einer Kombination eines Drucksensors und eines elektrochemischen Sensors
DE19648424C1 (de) * 1996-11-22 1998-06-25 Siemens Ag Mikromechanischer Sensor
DE19704454C2 (de) * 1997-02-06 2000-03-02 Bosch Gmbh Robert Verfahren zur Herstellung oberflächenmikromechanischer Strukturen mittels Ätzung in der Dampfphase
US6063696A (en) * 1997-05-07 2000-05-16 Texas Instruments Incorporated Method of reducing wafer particles after partial saw using a superhard protective coating
EP0882978A1 (fr) * 1997-06-04 1998-12-09 STMicroelectronics S.r.l. Dispositif semi-conducteur intégré comportant un microcapteur chimiorésistif de gaz, et procédé pour sa fabrication
US6065341A (en) * 1998-02-18 2000-05-23 Denso Corporation Semiconductor physical quantity sensor with stopper portion
DE19820816B4 (de) * 1998-05-09 2006-05-11 Robert Bosch Gmbh Bondpadstruktur und entsprechendes Herstellungsverfahren
US6105427A (en) * 1998-07-31 2000-08-22 Litton Systems, Inc. Micro-mechanical semiconductor accelerometer
US6218205B1 (en) * 1998-10-09 2001-04-17 The United States Of America As Represented By The Secretary Of The Air Force Post-process depositing shielding for microelectromechanical systems
DE19847305B4 (de) * 1998-10-14 2011-02-03 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Vorrichtung

Also Published As

Publication number Publication date
FR2818627A1 (fr) 2002-06-28
DE10065013B4 (de) 2009-12-24
ITMI20012762A1 (it) 2003-06-21
DE10065013A1 (de) 2002-07-04
JP4603740B2 (ja) 2010-12-22
US6686638B2 (en) 2004-02-03
JP2002301695A (ja) 2002-10-15
US20020096727A1 (en) 2002-07-25

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Effective date: 20160831