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FR2881565B1 - Circuits de selection de ligne binaire pour memoires non volatiles - Google Patents

Circuits de selection de ligne binaire pour memoires non volatiles

Info

Publication number
FR2881565B1
FR2881565B1 FR0501084A FR0501084A FR2881565B1 FR 2881565 B1 FR2881565 B1 FR 2881565B1 FR 0501084 A FR0501084 A FR 0501084A FR 0501084 A FR0501084 A FR 0501084A FR 2881565 B1 FR2881565 B1 FR 2881565B1
Authority
FR
France
Prior art keywords
line selection
volatile memories
selection circuits
binary line
binary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0501084A
Other languages
English (en)
Other versions
FR2881565A1 (fr
Inventor
Marylene Combe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Priority to FR0501084A priority Critical patent/FR2881565B1/fr
Priority to US11/120,894 priority patent/US20060171240A1/en
Publication of FR2881565A1 publication Critical patent/FR2881565A1/fr
Application granted granted Critical
Publication of FR2881565B1 publication Critical patent/FR2881565B1/fr
Priority to US12/017,297 priority patent/US20080130365A1/en
Priority to US12/938,996 priority patent/US20110044114A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
FR0501084A 2005-02-03 2005-02-03 Circuits de selection de ligne binaire pour memoires non volatiles Expired - Fee Related FR2881565B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR0501084A FR2881565B1 (fr) 2005-02-03 2005-02-03 Circuits de selection de ligne binaire pour memoires non volatiles
US11/120,894 US20060171240A1 (en) 2005-02-03 2005-05-03 Bitline selection circuitry for nonvolatile memories
US12/017,297 US20080130365A1 (en) 2005-02-03 2008-01-21 Bitline selection circuitry for nonvolatile memories
US12/938,996 US20110044114A1 (en) 2005-02-03 2010-11-03 Apparatus and method for bit lines discharging and sensing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0501084A FR2881565B1 (fr) 2005-02-03 2005-02-03 Circuits de selection de ligne binaire pour memoires non volatiles

Publications (2)

Publication Number Publication Date
FR2881565A1 FR2881565A1 (fr) 2006-08-04
FR2881565B1 true FR2881565B1 (fr) 2007-08-24

Family

ID=35058844

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0501084A Expired - Fee Related FR2881565B1 (fr) 2005-02-03 2005-02-03 Circuits de selection de ligne binaire pour memoires non volatiles

Country Status (2)

Country Link
US (3) US20060171240A1 (fr)
FR (1) FR2881565B1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2881565B1 (fr) * 2005-02-03 2007-08-24 Atmel Corp Circuits de selection de ligne binaire pour memoires non volatiles
JP2009252275A (ja) * 2008-04-03 2009-10-29 Nec Electronics Corp 半導体記憶装置
US8179708B2 (en) * 2009-02-18 2012-05-15 Atmel Corporation Anti-cross-talk circuitry for ROM arrays
US8830759B2 (en) 2011-12-09 2014-09-09 Atmel Corporation Sense amplifier with offset current injection
US11169876B2 (en) 2019-12-31 2021-11-09 Micron Technology, Inc. Apparatuses, systems, and methods for error correction
US11733898B2 (en) * 2021-04-26 2023-08-22 Microsoft Technology Licensing, Llc Memory array for storing odd and even data bits of data words in alternate sub-banks to reduce multi-bit error rate and related methods

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DE3030867A1 (de) * 1980-08-14 1982-03-11 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung fuer einen in zeilen und spalten organisierten festwertspeicher zur vermeidung des absinkens von bitleitunspotenialen
US4725986A (en) * 1983-09-20 1988-02-16 International Business Machines Corporation FET read only memory cell with word line augmented precharging of the bit lines
US4651305A (en) * 1985-02-11 1987-03-17 Thomson Components-Mostek Corporation Sense amplifier bit line isolation scheme
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
JPH01140496A (ja) * 1987-11-27 1989-06-01 Nec Corp 半導体記憶装置
US5287322A (en) * 1991-07-17 1994-02-15 Sgs-Thomson Microelectronics, Inc. Integrated circuit dual-port memory device having reduced capacitance
JP3104319B2 (ja) * 1991-08-29 2000-10-30 ソニー株式会社 不揮発性記憶装置
JPH09231783A (ja) * 1996-02-26 1997-09-05 Sharp Corp 半導体記憶装置
JP3380107B2 (ja) * 1996-03-22 2003-02-24 シャープ株式会社 半導体記憶装置
KR100245412B1 (ko) * 1997-04-12 2000-03-02 윤종용 노어형 반도체 메모리 장치 및 그것의 데이터 독출방법
KR100258575B1 (ko) * 1997-12-30 2000-06-15 윤종용 노어형 반도체 메모리 장치 및 그 장치의 데이터 독출 방법
KR100268420B1 (ko) * 1997-12-31 2000-10-16 윤종용 반도체 메모리 장치 및 그 장치의 독출 방법
KR100294447B1 (ko) * 1998-06-29 2001-09-17 윤종용 불휘발성반도체메모리장치
US6084794A (en) * 1999-05-28 2000-07-04 Winbond Electronics Corp. High speed flat-cell mask ROM structure with select lines
JP3709302B2 (ja) * 1999-05-31 2005-10-26 株式会社日立製作所 半導体記憶装置及びそれを用いたセンサ
JP3393600B2 (ja) * 1999-07-07 2003-04-07 シャープ株式会社 半導体記憶装置
FR2809526B1 (fr) * 2000-05-24 2003-07-25 St Microelectronics Sa Memoire rom de taille reduite
JP3453552B2 (ja) * 2000-08-31 2003-10-06 松下電器産業株式会社 半導体記憶装置
JP2002100196A (ja) * 2000-09-26 2002-04-05 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2002170388A (ja) * 2000-11-30 2002-06-14 Mitsubishi Electric Corp スタティック型半導体記憶装置
US6510084B2 (en) * 2001-05-21 2003-01-21 Winbond Electronics Corporation Column decoder with increased immunity to high voltage breakdown
US6493269B1 (en) * 2001-05-31 2002-12-10 Sandisk Corporation Dual cell reading and writing technique
JP3640180B2 (ja) * 2001-07-23 2005-04-20 セイコーエプソン株式会社 不揮発性半導体記憶装置
TWI242779B (en) * 2001-09-28 2005-11-01 Macronix Int Co Ltd Rapid equalizing ground line and sense circuit
KR100403348B1 (ko) * 2001-10-08 2003-11-01 주식회사 하이닉스반도체 계층적 구조를 갖는 비트라인 선택 회로
JP3738838B2 (ja) * 2002-02-13 2006-01-25 セイコーエプソン株式会社 不揮発性半導体記憶装置
JP2003257192A (ja) * 2002-03-06 2003-09-12 Mitsubishi Electric Corp 半導体記憶装置および不揮発性半導体記憶装置
US6781897B2 (en) * 2002-08-01 2004-08-24 Infineon Technologies Flash Ltd. Defects detection
JP2004087040A (ja) * 2002-08-28 2004-03-18 Renesas Technology Corp 半導体装置とそのテスト方法
JP2004158111A (ja) * 2002-11-06 2004-06-03 Toshiba Corp メモリ回路
US6920059B2 (en) * 2002-11-29 2005-07-19 Infineon Technologies Aktiengesellschaft Reducing effects of noise coupling in integrated circuits with memory arrays
JP2004253115A (ja) * 2003-01-30 2004-09-09 Sharp Corp 半導体記憶装置
KR100558482B1 (ko) * 2003-02-04 2006-03-07 삼성전자주식회사 리드 전용 메모리 장치
KR100505109B1 (ko) * 2003-03-26 2005-07-29 삼성전자주식회사 읽기 시간을 단축시킬 수 있는 플래시 메모리 장치
US6990025B2 (en) * 2003-08-29 2006-01-24 International Business Machines Corporation Multi-port memory architecture
FR2881565B1 (fr) * 2005-02-03 2007-08-24 Atmel Corp Circuits de selection de ligne binaire pour memoires non volatiles
US8179708B2 (en) * 2009-02-18 2012-05-15 Atmel Corporation Anti-cross-talk circuitry for ROM arrays

Also Published As

Publication number Publication date
US20110044114A1 (en) 2011-02-24
US20080130365A1 (en) 2008-06-05
US20060171240A1 (en) 2006-08-03
FR2881565A1 (fr) 2006-08-04

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131031