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FR2858715B1 - Procede de detachement de couche de semiconducteur - Google Patents

Procede de detachement de couche de semiconducteur

Info

Publication number
FR2858715B1
FR2858715B1 FR0309597A FR0309597A FR2858715B1 FR 2858715 B1 FR2858715 B1 FR 2858715B1 FR 0309597 A FR0309597 A FR 0309597A FR 0309597 A FR0309597 A FR 0309597A FR 2858715 B1 FR2858715 B1 FR 2858715B1
Authority
FR
France
Prior art keywords
semiconductor layer
detaching
detaching semiconductor
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0309597A
Other languages
English (en)
Other versions
FR2858715A1 (fr
Inventor
Walter Schwarzenbach
Christophe Maleville
Mohamed Nadia Ben
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0309597A priority Critical patent/FR2858715B1/fr
Priority to US10/766,207 priority patent/US7465645B2/en
Priority to PCT/IB2004/002693 priority patent/WO2005013355A1/fr
Priority to KR1020067002268A priority patent/KR20060033809A/ko
Priority to EP04744304A priority patent/EP1652229A1/fr
Priority to CNB2004800268664A priority patent/CN100419991C/zh
Publication of FR2858715A1 publication Critical patent/FR2858715A1/fr
Application granted granted Critical
Publication of FR2858715B1 publication Critical patent/FR2858715B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Element Separation (AREA)
FR0309597A 2003-08-04 2003-08-04 Procede de detachement de couche de semiconducteur Expired - Lifetime FR2858715B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0309597A FR2858715B1 (fr) 2003-08-04 2003-08-04 Procede de detachement de couche de semiconducteur
US10/766,207 US7465645B2 (en) 2003-08-04 2004-01-29 Method of detaching a layer from a wafer using a localized starting area
PCT/IB2004/002693 WO2005013355A1 (fr) 2003-08-04 2004-08-04 Methode de detachement d'une couche semi-conductrice
KR1020067002268A KR20060033809A (ko) 2003-08-04 2004-08-04 반도체 층 분리방법
EP04744304A EP1652229A1 (fr) 2003-08-04 2004-08-04 Methode de detachement d'une couche semi-conductrice
CNB2004800268664A CN100419991C (zh) 2003-08-04 2004-08-04 分离半导体层的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0309597A FR2858715B1 (fr) 2003-08-04 2003-08-04 Procede de detachement de couche de semiconducteur

Publications (2)

Publication Number Publication Date
FR2858715A1 FR2858715A1 (fr) 2005-02-11
FR2858715B1 true FR2858715B1 (fr) 2005-12-30

Family

ID=34073004

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309597A Expired - Lifetime FR2858715B1 (fr) 2003-08-04 2003-08-04 Procede de detachement de couche de semiconducteur

Country Status (3)

Country Link
US (1) US7465645B2 (fr)
CN (1) CN100419991C (fr)
FR (1) FR2858715B1 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5064692B2 (ja) * 2006-02-09 2012-10-31 信越化学工業株式会社 Ｓｏｉ基板の製造方法
US7927975B2 (en) 2009-02-04 2011-04-19 Micron Technology, Inc. Semiconductor material manufacture
CN101950778A (zh) * 2010-09-02 2011-01-19 董维来 太阳能硅片湿法自动分片方法
FR3134229B1 (fr) * 2022-04-01 2024-03-08 Commissariat Energie Atomique Procede de transfert d’une couche mince sur un substrat support

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4738618A (en) 1987-05-14 1988-04-19 Semitherm Vertical thermal processor
FR2681472B1 (fr) 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3293736B2 (ja) * 1996-02-28 2002-06-17 キヤノン株式会社 半導体基板の作製方法および貼り合わせ基体
US20030087503A1 (en) 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
SG55413A1 (en) 1996-11-15 1998-12-21 Method Of Manufacturing Semico Method of manufacturing semiconductor article
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
US6155909A (en) 1997-05-12 2000-12-05 Silicon Genesis Corporation Controlled cleavage system using pressurized fluid
US6582999B2 (en) 1997-05-12 2003-06-24 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6150239A (en) 1997-05-31 2000-11-21 Max Planck Society Method for the transfer of thin layers monocrystalline material onto a desirable substrate
US5920764A (en) * 1997-09-30 1999-07-06 International Business Machines Corporation Process for restoring rejected wafers in line for reuse as new
DE19747164B4 (de) 1997-10-24 2005-12-15 Infineon Technologies Ag Anordnung zur Bearbeitung einer Substratscheibe
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6413874B1 (en) 1997-12-26 2002-07-02 Canon Kabushiki Kaisha Method and apparatus for etching a semiconductor article and method of preparing a semiconductor article by using the same
FR2774214B1 (fr) 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
TW437078B (en) * 1998-02-18 2001-05-28 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP3697106B2 (ja) 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP4379943B2 (ja) 1999-04-07 2009-12-09 株式会社デンソー 半導体基板の製造方法および半導体基板製造装置
JP3911901B2 (ja) 1999-04-09 2007-05-09 信越半導体株式会社 Ｓｏｉウエーハおよびｓｏｉウエーハの製造方法
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6846718B1 (en) * 1999-10-14 2005-01-25 Shin-Etsu Handotai Co., Ltd. Method for producing SOI wafer and SOI wafer
DE10008829B4 (de) 2000-02-25 2005-06-23 Steag Rtp Systems Gmbh Verfahren zum Entfernen von adsorbierten Molekülen aus einer Kammer
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
FR2816445B1 (fr) 2000-11-06 2003-07-25 Commissariat Energie Atomique Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible
DE60108078T2 (de) 2001-04-12 2005-12-01 Infineon Technologies Sc300 Gmbh & Co. Ohg Heizungsanlage und Verfahren zur Heizung für einen Reaktor
NL1018086C2 (nl) 2001-05-16 2002-11-26 Asm Int Werkwijze en inrichting voor het thermisch behandelen van substraten.
FR2834123B1 (fr) * 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
FR2839385B1 (fr) * 2002-05-02 2004-07-23 Soitec Silicon On Insulator Procede de decollement de couches de materiau
US6700453B2 (en) * 2002-06-18 2004-03-02 Nokia Corporation Amplitude imbalance compensation of quadrature modulator
FR2847714B1 (fr) 2002-11-27 2005-02-18 Soitec Silicon On Insulator Procede et dispositif de recuit de tranche de semiconducteur
US6911376B2 (en) * 2003-10-01 2005-06-28 Wafermasters Selective heating using flash anneal

Also Published As

Publication number Publication date
CN1853265A (zh) 2006-10-25
FR2858715A1 (fr) 2005-02-11
CN100419991C (zh) 2008-09-17
US7465645B2 (en) 2008-12-16
US20050028727A1 (en) 2005-02-10

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