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FR2880472B1 - Procede et systeme de diffusometrie - Google Patents

Procede et systeme de diffusometrie

Info

Publication number
FR2880472B1
FR2880472B1 FR0513463A FR0513463A FR2880472B1 FR 2880472 B1 FR2880472 B1 FR 2880472B1 FR 0513463 A FR0513463 A FR 0513463A FR 0513463 A FR0513463 A FR 0513463A FR 2880472 B1 FR2880472 B1 FR 2880472B1
Authority
FR
France
Prior art keywords
diffusometry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0513463A
Other languages
English (en)
Other versions
FR2880472A1 (fr
Inventor
Nigel Peter Smith
Yi Sha Ku
Shih Chun Wang
Chun Hung Ko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industrial Technology Research Institute ITRI
Nanometrics Inc
Original Assignee
Industrial Technology Research Institute ITRI
Accent Optical Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Industrial Technology Research Institute ITRI, Accent Optical Technologies Inc filed Critical Industrial Technology Research Institute ITRI
Publication of FR2880472A1 publication Critical patent/FR2880472A1/fr
Application granted granted Critical
Publication of FR2880472B1 publication Critical patent/FR2880472B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • G01N21/4788Diffraction
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • G01B11/24Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47Scattering, i.e. diffuse reflection
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
FR0513463A 2004-12-30 2005-12-29 Procede et systeme de diffusometrie Expired - Fee Related FR2880472B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093141298A TWI269870B (en) 2004-12-30 2004-12-30 Method for deciding structure parameters of a grating

Publications (2)

Publication Number Publication Date
FR2880472A1 FR2880472A1 (fr) 2006-07-07
FR2880472B1 true FR2880472B1 (fr) 2014-02-21

Family

ID=36589713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0513463A Expired - Fee Related FR2880472B1 (fr) 2004-12-30 2005-12-29 Procede et systeme de diffusometrie

Country Status (6)

Country Link
US (1) US7532317B2 (fr)
JP (1) JP2006226994A (fr)
KR (1) KR101257954B1 (fr)
DE (1) DE102005063087A1 (fr)
FR (1) FR2880472B1 (fr)
TW (1) TWI269870B (fr)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000072440A (ko) * 2000-08-25 2000-12-05 정권수 슬래그와 석탄연소재를 이용한 아스콘채움재 제조방법
US20080144036A1 (en) * 2006-12-19 2008-06-19 Asml Netherlands B.V. Method of measurement, an inspection apparatus and a lithographic apparatus
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
TWI339778B (en) * 2006-07-12 2011-04-01 Ind Tech Res Inst Method for designing gratings
US7710572B2 (en) * 2006-11-30 2010-05-04 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US8798966B1 (en) * 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7858404B2 (en) 2007-03-14 2010-12-28 Taiwan Semiconductor Manufacturing Company, Ltd. Measurement of overlay offset in semiconductor processing
JP4968470B2 (ja) * 2007-10-11 2012-07-04 大日本印刷株式会社 周期構造測定方法及びその方法を用いた周期構造測定装置
NL1036098A1 (nl) * 2007-11-08 2009-05-11 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus lithographic, processing cell and device manufacturing method.
TWI364784B (en) 2008-06-13 2012-05-21 Ind Tech Res Inst Method for designing overlay targets and method and system for measuring overlay error using the same
US8214771B2 (en) * 2009-01-08 2012-07-03 Kla-Tencor Corporation Scatterometry metrology target design optimization
US20110276319A1 (en) * 2010-05-06 2011-11-10 Jonathan Michael Madsen Determination of material optical properties for optical metrology of structures
US9885962B2 (en) * 2013-10-28 2018-02-06 Kla-Tencor Corporation Methods and apparatus for measuring semiconductor device overlay using X-ray metrology
US10311198B2 (en) * 2014-02-16 2019-06-04 Nova Measuring Instruments Ltd. Overlay design optimization
US10210606B2 (en) * 2014-10-14 2019-02-19 Kla-Tencor Corporation Signal response metrology for image based and scatterometry overlay measurements
KR102010941B1 (ko) * 2015-03-25 2019-08-14 에이에스엠엘 네델란즈 비.브이. 계측 방법, 계측 장치 및 디바이스 제조 방법
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
US10345721B1 (en) 2015-06-16 2019-07-09 Kla-Tencor Corporation Measurement library optimization in semiconductor metrology
CN105933697B (zh) * 2016-06-30 2017-10-27 北京邮电大学 一种光栅参数输出的方法及装置
US11067389B2 (en) * 2018-03-13 2021-07-20 Kla Corporation Overlay metrology system and method
CN113029024B (zh) * 2021-03-01 2021-11-16 长鑫存储技术有限公司 半导体结构的测量方法及设备
US12131111B2 (en) 2021-03-01 2024-10-29 Changxin Memory Technologies, Inc. Method, apparatus and device for measuring semiconductor structure
US20230194996A1 (en) * 2021-12-17 2023-06-22 Micron Technology, Inc. Apparatuses and methods for diffraction base overlay measurements
CN116379927B (zh) * 2023-05-31 2023-08-29 湖南隆深氢能科技有限公司 应用于贴合生产线的精准检测方法、系统以及存储介质
CN117289562B (zh) * 2023-11-22 2024-02-13 全芯智造技术有限公司 用于仿真套刻标记的方法、设备和介质

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6134011A (en) * 1997-09-22 2000-10-17 Hdi Instrumentation Optical measurement system using polarized light
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
JP2004507719A (ja) * 2000-08-10 2004-03-11 サーマ−ウェーブ・インコーポレイテッド 回折微細構造の光学的測定のためのデータベース補間方法
US6943900B2 (en) * 2000-09-15 2005-09-13 Timbre Technologies, Inc. Generation of a library of periodic grating diffraction signals
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6785638B2 (en) 2001-08-06 2004-08-31 Timbre Technologies, Inc. Method and system of dynamic learning through a regression-based library generation process
IL148484A (en) * 2002-03-04 2008-11-26 Nova Measuring Instr Ltd Optical measurements of patterned structures
US6842261B2 (en) * 2002-08-26 2005-01-11 Timbre Technologies, Inc. Integrated circuit profile value determination

Also Published As

Publication number Publication date
TW200622351A (en) 2006-07-01
TWI269870B (en) 2007-01-01
DE102005063087A1 (de) 2006-07-20
DE102005063087A9 (de) 2006-11-23
US20060146347A1 (en) 2006-07-06
JP2006226994A (ja) 2006-08-31
FR2880472A1 (fr) 2006-07-07
US7532317B2 (en) 2009-05-12
KR101257954B1 (ko) 2013-04-24
KR20060079115A (ko) 2006-07-05

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Legal Events

Date Code Title Description
CD Change of name or company name
TQ Partial transmission of property
PLFP Fee payment

Year of fee payment: 11

PLFP Fee payment

Year of fee payment: 12

ST Notification of lapse

Effective date: 20180831