FR2729020B1 - Circuit de survoltage utilise dans un etat actif d'un dispositif de memoire a semi-conducteurs - Google Patents
Circuit de survoltage utilise dans un etat actif d'un dispositif de memoire a semi-conducteursInfo
- Publication number
- FR2729020B1 FR2729020B1 FR9515663A FR9515663A FR2729020B1 FR 2729020 B1 FR2729020 B1 FR 2729020B1 FR 9515663 A FR9515663 A FR 9515663A FR 9515663 A FR9515663 A FR 9515663A FR 2729020 B1 FR2729020 B1 FR 2729020B1
- Authority
- FR
- France
- Prior art keywords
- memory device
- semiconductor memory
- active state
- circuit used
- boost circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940038503A KR0137317B1 (ko) | 1994-12-29 | 1994-12-29 | 반도체 메모리소자의 활성싸이클에서 사용되는 승압회로 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2729020A1 FR2729020A1 (fr) | 1996-07-05 |
| FR2729020B1 true FR2729020B1 (fr) | 1998-07-10 |
Family
ID=19404725
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9515663A Expired - Fee Related FR2729020B1 (fr) | 1994-12-29 | 1995-12-28 | Circuit de survoltage utilise dans un etat actif d'un dispositif de memoire a semi-conducteurs |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JP2828942B2 (ja) |
| KR (1) | KR0137317B1 (ja) |
| CN (1) | CN1045838C (ja) |
| DE (1) | DE19547796C2 (ja) |
| FR (1) | FR2729020B1 (ja) |
| GB (1) | GB2296593B (ja) |
| TW (1) | TW282544B (ja) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0142963B1 (ko) * | 1995-05-17 | 1998-08-17 | 김광호 | 외부제어신호에 적응 동작하는 승압회로를 갖는 반도체 메모리 장치 |
| KR0172337B1 (ko) * | 1995-11-13 | 1999-03-30 | 김광호 | 반도체 메모리장치의 내부승압전원 발생회로 |
| US6094395A (en) * | 1998-03-27 | 2000-07-25 | Infineon Technologies North America Corp. | Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs |
| CN1299432C (zh) * | 2001-10-29 | 2007-02-07 | 旺宏电子股份有限公司 | 减少工作电压与温度所造成的影响的推动电压产生器 |
| KR100846484B1 (ko) | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Ｒｍｉｍ 전극 및 그 제조방법 및 이를 채용하는 스퍼터링장치 |
| KR100741471B1 (ko) | 2006-09-29 | 2007-07-20 | 삼성전자주식회사 | 래치-업이 발생하지 않는 부스팅 스킴 |
| JP5137545B2 (ja) * | 2006-12-25 | 2013-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置及びその駆動方法 |
| US9502119B2 (en) * | 2014-11-20 | 2016-11-22 | Samsung Electronics Co., Ltd. | Distributed capacitive delay tracking boost-assist circuit |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63153791A (ja) * | 1986-12-17 | 1988-06-27 | Mitsubishi Electric Corp | ワ−ド線駆動信号発生回路 |
| US4752699A (en) * | 1986-12-19 | 1988-06-21 | International Business Machines Corp. | On chip multiple voltage generation using a charge pump and plural feedback sense circuits |
| KR920010749B1 (ko) * | 1989-06-10 | 1992-12-14 | 삼성전자 주식회사 | 반도체 집적소자의 내부전압 변환회로 |
| GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
| US5157278A (en) * | 1990-10-30 | 1992-10-20 | Samsung Electronics Co., Ltd. | Substrate voltage generator for semiconductor device |
| US5272676A (en) * | 1990-11-20 | 1993-12-21 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| JPH04287418A (ja) * | 1991-03-18 | 1992-10-13 | Fujitsu Ltd | 半導体集積回路 |
| KR950002015B1 (ko) * | 1991-12-23 | 1995-03-08 | 삼성전자주식회사 | 하나의 오실레이터에 의해 동작되는 정전원 발생회로 |
| JPH05174591A (ja) * | 1991-12-25 | 1993-07-13 | Sharp Corp | チャージポンプ回路 |
| US5329168A (en) * | 1991-12-27 | 1994-07-12 | Nec Corporation | Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources |
| JP3179848B2 (ja) * | 1992-03-27 | 2001-06-25 | 三菱電機株式会社 | 半導体記憶装置 |
| KR950002726B1 (ko) * | 1992-03-30 | 1995-03-24 | 삼성전자주식회사 | 기판전압 발생기의 전하 펌프 회로 |
| US5337284A (en) * | 1993-01-11 | 1994-08-09 | United Memories, Inc. | High voltage generator having a self-timed clock circuit and charge pump, and a method therefor |
-
1994
- 1994-12-29 KR KR1019940038503A patent/KR0137317B1/ko not_active IP Right Cessation
-
1995
- 1995-12-09 TW TW084113127A patent/TW282544B/zh not_active IP Right Cessation
- 1995-12-20 DE DE19547796A patent/DE19547796C2/de not_active Expired - Lifetime
- 1995-12-28 FR FR9515663A patent/FR2729020B1/fr not_active Expired - Fee Related
- 1995-12-28 JP JP7342653A patent/JP2828942B2/ja not_active Expired - Fee Related
- 1995-12-29 CN CN95120640A patent/CN1045838C/zh not_active Expired - Lifetime
- 1995-12-29 GB GB9526716A patent/GB2296593B/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| TW282544B (ja) | 1996-08-01 |
| CN1045838C (zh) | 1999-10-20 |
| JP2828942B2 (ja) | 1998-11-25 |
| KR960025707A (ko) | 1996-07-20 |
| DE19547796C2 (de) | 1998-04-16 |
| GB2296593B (en) | 1997-07-23 |
| FR2729020A1 (fr) | 1996-07-05 |
| JPH08235859A (ja) | 1996-09-13 |
| DE19547796A1 (de) | 1996-07-11 |
| GB9526716D0 (en) | 1996-02-28 |
| CN1127919A (zh) | 1996-07-31 |
| GB2296593A (en) | 1996-07-03 |
| KR0137317B1 (ko) | 1998-04-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |