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FR2797712B1 - Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif - Google Patents

Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif

Info

Publication number
FR2797712B1
FR2797712B1 FR0010702A FR0010702A FR2797712B1 FR 2797712 B1 FR2797712 B1 FR 2797712B1 FR 0010702 A FR0010702 A FR 0010702A FR 0010702 A FR0010702 A FR 0010702A FR 2797712 B1 FR2797712 B1 FR 2797712B1
Authority
FR
France
Prior art keywords
electron
manufacturing
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0010702A
Other languages
English (en)
Other versions
FR2797712A1 (fr
Inventor
Wang Nang Wang
Neil Anthony Fox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Smiths Group PLC
Original Assignee
Smiths Group PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Smiths Group PLC filed Critical Smiths Group PLC
Publication of FR2797712A1 publication Critical patent/FR2797712A1/fr
Application granted granted Critical
Publication of FR2797712B1 publication Critical patent/FR2797712B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/308Semiconductor cathodes, e.g. cathodes with PN junction layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/316Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02Manufacture of electrodes or electrode systems
    • H01J9/022Manufacture of electrodes or electrode systems of cold cathodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00Electrodes common to discharge tubes
    • H01J2201/30Cold cathodes
    • H01J2201/304Field emission cathodes
    • H01J2201/30403Field emission cathodes characterised by the emitter shape
    • H01J2201/30423Microengineered edge emitters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00Electron emission display panels, e.g. field emission display panels
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00Nanotechnology
    • Y10S977/902Specified use of nanostructure
    • Y10S977/932Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/939Electron emitter, e.g. spindt emitter tip coated with nanoparticles

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
FR0010702A 1999-03-06 2000-08-18 Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif Expired - Fee Related FR2797712B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9905132.8A GB9905132D0 (en) 1999-03-06 1999-03-06 Electron emitting devices

Publications (2)

Publication Number Publication Date
FR2797712A1 FR2797712A1 (fr) 2001-02-23
FR2797712B1 true FR2797712B1 (fr) 2004-02-20

Family

ID=10849072

Family Applications (2)

Application Number Title Priority Date Filing Date
FR0002825A Expired - Fee Related FR2793603B1 (fr) 1999-03-06 2000-03-06 Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif
FR0010702A Expired - Fee Related FR2797712B1 (fr) 1999-03-06 2000-08-18 Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif

Family Applications Before (1)

Application Number Title Priority Date Filing Date
FR0002825A Expired - Fee Related FR2793603B1 (fr) 1999-03-06 2000-03-06 Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif

Country Status (5)

Country Link
US (1) US6538368B1 (fr)
JP (2) JP4743933B2 (fr)
DE (1) DE10009846A1 (fr)
FR (2) FR2793603B1 (fr)
GB (2) GB9905132D0 (fr)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4323679B2 (ja) * 2000-05-08 2009-09-02 キヤノン株式会社 電子源形成用基板及び画像表示装置
US6911768B2 (en) * 2001-04-30 2005-06-28 Hewlett-Packard Development Company, L.P. Tunneling emitter with nanohole openings
US6847045B2 (en) * 2001-10-12 2005-01-25 Hewlett-Packard Development Company, L.P. High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
US6558968B1 (en) * 2001-10-31 2003-05-06 Hewlett-Packard Development Company Method of making an emitter with variable density photoresist layer
US7446474B2 (en) * 2002-10-10 2008-11-04 Applied Materials, Inc. Hetero-junction electron emitter with Group III nitride and activated alkali halide
WO2006061686A2 (fr) * 2004-12-10 2006-06-15 Johan Frans Prins Dispositif cathodique
US7759662B2 (en) * 2004-12-14 2010-07-20 National Institute For Materials Science Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the same
US20060214577A1 (en) * 2005-03-26 2006-09-28 Lorraine Byrne Depositing of powdered luminescent material onto substrate of electroluminescent lamp
US7737614B2 (en) * 2005-06-17 2010-06-15 Sumitomo Electric Industries, Ltd. Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device
JP5083874B2 (ja) * 2007-07-06 2012-11-28 独立行政法人産業技術総合研究所 電子源
US8018053B2 (en) * 2008-01-31 2011-09-13 Northrop Grumman Systems Corporation Heat transfer device
US8227985B2 (en) * 2010-08-06 2012-07-24 Los Alamos National Security, Llc Photo-stimulated low electron temperature high current diamond film field emission cathode
CN102360999A (zh) * 2011-11-08 2012-02-22 福州大学 柔性可控有机pn结场发射电子源
WO2015023357A1 (fr) * 2013-08-12 2015-02-19 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Source d'électrons chimiquement stable à photoémission en lumière visible
US10051720B1 (en) 2015-07-08 2018-08-14 Los Alamos National Security, Llc Radio frequency field immersed ultra-low temperature electron source
WO2024196395A1 (fr) * 2023-03-20 2024-09-26 M7D Corporation Dépôt sélectif de diamant

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1303659A (fr) * 1969-11-12 1973-01-17
GB1303660A (fr) * 1969-11-12 1973-01-17
GB1285866A (en) * 1970-06-22 1972-08-16 Gen Electric Co Ltd Improvements in or relating to cathodes for use in electric discharge devices
US3821773A (en) * 1972-01-24 1974-06-28 Beta Ind Inc Solid state emitting device and method of producing the same
GB1332752A (en) * 1972-02-28 1973-10-03 Gen Electric Co Ltd Cathodes for use in electric discharge devices
US4149308A (en) 1977-12-16 1979-04-17 The United States Of America As Represented By The Secretary Of The Army Method of forming an efficient electron emitter cold cathode
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
US4683399A (en) * 1981-06-29 1987-07-28 Rockwell International Corporation Silicon vacuum electron devices
US5202571A (en) * 1990-07-06 1993-04-13 Canon Kabushiki Kaisha Electron emitting device with diamond
US5670788A (en) * 1992-01-22 1997-09-23 Massachusetts Institute Of Technology Diamond cold cathode
TW286435B (fr) * 1994-07-27 1996-09-21 Siemens Ag
JP3187302B2 (ja) * 1994-10-05 2001-07-11 松下電器産業株式会社 電子放出陰極、それを用いた電子放出素子、フラットディスプレイ、及び熱電冷却装置、ならびに電子放出陰極の製造方法
EP0706196B1 (fr) 1994-10-05 2000-03-01 Matsushita Electric Industrial Co., Ltd. Cathode émittrice d'électrons; un dispositif d'émission d'électrons, un dispositif d'affichage plat, dispositif de refroidissement thermoélectrique la contenant; et procédé pour la fabrication de la cathode émittrice d'électrons
US5616368A (en) 1995-01-31 1997-04-01 Lucent Technologies Inc. Field emission devices employing activated diamond particle emitters and methods for making same
US5709577A (en) 1994-12-22 1998-01-20 Lucent Technologies Inc. Method of making field emission devices employing ultra-fine diamond particle emitters
EP0789383B1 (fr) 1996-02-08 2008-07-02 Canon Kabushiki Kaisha Procédé de fabrication d'un dispositif d'émission d'électrons, source d'électrons et appareil de formation d'images et procédé d'inspection de la fabrication
JP3264483B2 (ja) * 1996-03-27 2002-03-11 松下電器産業株式会社 電子放出素子及びその製造方法
JPH09326231A (ja) * 1996-04-05 1997-12-16 Canon Inc 電子放出素子及び電子源及び画像形成装置の製造方法
JP3387005B2 (ja) * 1997-04-09 2003-03-17 松下電器産業株式会社 電子放出素子及びその製造方法
DE19727606A1 (de) * 1997-06-28 1999-01-07 Philips Patentverwaltung Elektronenemitter mit nanokristallinem Diamant
DE19757141A1 (de) 1997-12-20 1999-06-24 Philips Patentverwaltung Array aus Diamant/wasserstoffhaltigen Elektroden
US5945777A (en) * 1998-04-30 1999-08-31 St. Clair Intellectual Property Consultants, Inc. Surface conduction emitters for use in field emission display devices
JP2000223006A (ja) * 1999-01-28 2000-08-11 Mitsubishi Heavy Ind Ltd ダイヤモンド電子放出素子及びその製造方法

Also Published As

Publication number Publication date
FR2793603A1 (fr) 2000-11-17
FR2797712A1 (fr) 2001-02-23
US6538368B1 (en) 2003-03-25
DE10009846A1 (de) 2000-09-07
FR2793603B1 (fr) 2002-04-19
GB2347785B (en) 2003-12-17
JP2001006532A (ja) 2001-01-12
GB9905132D0 (en) 1999-04-28
JP2000260301A (ja) 2000-09-22
JP4743933B2 (ja) 2011-08-10
GB0003985D0 (en) 2000-04-12
GB2347785A (en) 2000-09-13

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Legal Events

Date Code Title Description
ST Notification of lapse
FC Decision of inpi director general to approve request for restoration
CD Change of name or company name
ST Notification of lapse

Effective date: 20071130