FR2797712B1 - Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif - Google Patents
Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositifInfo
- Publication number
- FR2797712B1 FR2797712B1 FR0010702A FR0010702A FR2797712B1 FR 2797712 B1 FR2797712 B1 FR 2797712B1 FR 0010702 A FR0010702 A FR 0010702A FR 0010702 A FR0010702 A FR 0010702A FR 2797712 B1 FR2797712 B1 FR 2797712B1
- Authority
- FR
- France
- Prior art keywords
- electron
- manufacturing
- emitting device
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/316—Cold cathodes, e.g. field-emissive cathode having an electric field parallel to the surface, e.g. thin film cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
- H01J2201/30423—Microengineered edge emitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/939—Electron emitter, e.g. spindt emitter tip coated with nanoparticles
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9905132.8A GB9905132D0 (en) | 1999-03-06 | 1999-03-06 | Electron emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2797712A1 FR2797712A1 (fr) | 2001-02-23 |
FR2797712B1 true FR2797712B1 (fr) | 2004-02-20 |
Family
ID=10849072
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0002825A Expired - Fee Related FR2793603B1 (fr) | 1999-03-06 | 2000-03-06 | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
FR0010702A Expired - Fee Related FR2797712B1 (fr) | 1999-03-06 | 2000-08-18 | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0002825A Expired - Fee Related FR2793603B1 (fr) | 1999-03-06 | 2000-03-06 | Dispositif emetteur d'electrons et procede de fabrication d'un tel dispositif |
Country Status (5)
Country | Link |
---|---|
US (1) | US6538368B1 (fr) |
JP (2) | JP4743933B2 (fr) |
DE (1) | DE10009846A1 (fr) |
FR (2) | FR2793603B1 (fr) |
GB (2) | GB9905132D0 (fr) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4323679B2 (ja) * | 2000-05-08 | 2009-09-02 | キヤノン株式会社 | 電子源形成用基板及び画像表示装置 |
US6911768B2 (en) * | 2001-04-30 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Tunneling emitter with nanohole openings |
US6847045B2 (en) * | 2001-10-12 | 2005-01-25 | Hewlett-Packard Development Company, L.P. | High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission |
US6558968B1 (en) * | 2001-10-31 | 2003-05-06 | Hewlett-Packard Development Company | Method of making an emitter with variable density photoresist layer |
US7446474B2 (en) * | 2002-10-10 | 2008-11-04 | Applied Materials, Inc. | Hetero-junction electron emitter with Group III nitride and activated alkali halide |
WO2006061686A2 (fr) * | 2004-12-10 | 2006-06-15 | Johan Frans Prins | Dispositif cathodique |
US7759662B2 (en) * | 2004-12-14 | 2010-07-20 | National Institute For Materials Science | Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the same |
US20060214577A1 (en) * | 2005-03-26 | 2006-09-28 | Lorraine Byrne | Depositing of powdered luminescent material onto substrate of electroluminescent lamp |
US7737614B2 (en) * | 2005-06-17 | 2010-06-15 | Sumitomo Electric Industries, Ltd. | Diamond electron emission cathode, electron emission source, electron microscope, and electron beam exposure device |
JP5083874B2 (ja) * | 2007-07-06 | 2012-11-28 | 独立行政法人産業技術総合研究所 | 電子源 |
US8018053B2 (en) * | 2008-01-31 | 2011-09-13 | Northrop Grumman Systems Corporation | Heat transfer device |
US8227985B2 (en) * | 2010-08-06 | 2012-07-24 | Los Alamos National Security, Llc | Photo-stimulated low electron temperature high current diamond film field emission cathode |
CN102360999A (zh) * | 2011-11-08 | 2012-02-22 | 福州大学 | 柔性可控有机pn结场发射电子源 |
WO2015023357A1 (fr) * | 2013-08-12 | 2015-02-19 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Source d'électrons chimiquement stable à photoémission en lumière visible |
US10051720B1 (en) | 2015-07-08 | 2018-08-14 | Los Alamos National Security, Llc | Radio frequency field immersed ultra-low temperature electron source |
WO2024196395A1 (fr) * | 2023-03-20 | 2024-09-26 | M7D Corporation | Dépôt sélectif de diamant |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1303659A (fr) * | 1969-11-12 | 1973-01-17 | ||
GB1303660A (fr) * | 1969-11-12 | 1973-01-17 | ||
GB1285866A (en) * | 1970-06-22 | 1972-08-16 | Gen Electric Co Ltd | Improvements in or relating to cathodes for use in electric discharge devices |
US3821773A (en) * | 1972-01-24 | 1974-06-28 | Beta Ind Inc | Solid state emitting device and method of producing the same |
GB1332752A (en) * | 1972-02-28 | 1973-10-03 | Gen Electric Co Ltd | Cathodes for use in electric discharge devices |
US4149308A (en) | 1977-12-16 | 1979-04-17 | The United States Of America As Represented By The Secretary Of The Army | Method of forming an efficient electron emitter cold cathode |
NL184549C (nl) * | 1978-01-27 | 1989-08-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting. |
US4683399A (en) * | 1981-06-29 | 1987-07-28 | Rockwell International Corporation | Silicon vacuum electron devices |
US5202571A (en) * | 1990-07-06 | 1993-04-13 | Canon Kabushiki Kaisha | Electron emitting device with diamond |
US5670788A (en) * | 1992-01-22 | 1997-09-23 | Massachusetts Institute Of Technology | Diamond cold cathode |
TW286435B (fr) * | 1994-07-27 | 1996-09-21 | Siemens Ag | |
JP3187302B2 (ja) * | 1994-10-05 | 2001-07-11 | 松下電器産業株式会社 | 電子放出陰極、それを用いた電子放出素子、フラットディスプレイ、及び熱電冷却装置、ならびに電子放出陰極の製造方法 |
EP0706196B1 (fr) | 1994-10-05 | 2000-03-01 | Matsushita Electric Industrial Co., Ltd. | Cathode émittrice d'électrons; un dispositif d'émission d'électrons, un dispositif d'affichage plat, dispositif de refroidissement thermoélectrique la contenant; et procédé pour la fabrication de la cathode émittrice d'électrons |
US5616368A (en) | 1995-01-31 | 1997-04-01 | Lucent Technologies Inc. | Field emission devices employing activated diamond particle emitters and methods for making same |
US5709577A (en) | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
EP0789383B1 (fr) | 1996-02-08 | 2008-07-02 | Canon Kabushiki Kaisha | Procédé de fabrication d'un dispositif d'émission d'électrons, source d'électrons et appareil de formation d'images et procédé d'inspection de la fabrication |
JP3264483B2 (ja) * | 1996-03-27 | 2002-03-11 | 松下電器産業株式会社 | 電子放出素子及びその製造方法 |
JPH09326231A (ja) * | 1996-04-05 | 1997-12-16 | Canon Inc | 電子放出素子及び電子源及び画像形成装置の製造方法 |
JP3387005B2 (ja) * | 1997-04-09 | 2003-03-17 | 松下電器産業株式会社 | 電子放出素子及びその製造方法 |
DE19727606A1 (de) * | 1997-06-28 | 1999-01-07 | Philips Patentverwaltung | Elektronenemitter mit nanokristallinem Diamant |
DE19757141A1 (de) | 1997-12-20 | 1999-06-24 | Philips Patentverwaltung | Array aus Diamant/wasserstoffhaltigen Elektroden |
US5945777A (en) * | 1998-04-30 | 1999-08-31 | St. Clair Intellectual Property Consultants, Inc. | Surface conduction emitters for use in field emission display devices |
JP2000223006A (ja) * | 1999-01-28 | 2000-08-11 | Mitsubishi Heavy Ind Ltd | ダイヤモンド電子放出素子及びその製造方法 |
-
1999
- 1999-03-06 GB GBGB9905132.8A patent/GB9905132D0/en not_active Ceased
-
2000
- 2000-02-22 GB GB0003985A patent/GB2347785B/en not_active Expired - Fee Related
- 2000-02-25 US US09/513,113 patent/US6538368B1/en not_active Expired - Lifetime
- 2000-03-01 DE DE10009846A patent/DE10009846A1/de not_active Withdrawn
- 2000-03-03 JP JP2000058491A patent/JP4743933B2/ja not_active Expired - Fee Related
- 2000-03-06 FR FR0002825A patent/FR2793603B1/fr not_active Expired - Fee Related
- 2000-06-12 JP JP2000174689A patent/JP2001006532A/ja active Pending
- 2000-08-18 FR FR0010702A patent/FR2797712B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2793603A1 (fr) | 2000-11-17 |
FR2797712A1 (fr) | 2001-02-23 |
US6538368B1 (en) | 2003-03-25 |
DE10009846A1 (de) | 2000-09-07 |
FR2793603B1 (fr) | 2002-04-19 |
GB2347785B (en) | 2003-12-17 |
JP2001006532A (ja) | 2001-01-12 |
GB9905132D0 (en) | 1999-04-28 |
JP2000260301A (ja) | 2000-09-22 |
JP4743933B2 (ja) | 2011-08-10 |
GB0003985D0 (en) | 2000-04-12 |
GB2347785A (en) | 2000-09-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
FC | Decision of inpi director general to approve request for restoration | ||
CD | Change of name or company name | ||
ST | Notification of lapse |
Effective date: 20071130 |