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FR2335055A1 - Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr. - Google Patents

Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr.

Info

Publication number
FR2335055A1
FR2335055A1 FR7537657A FR7537657A FR2335055A1 FR 2335055 A1 FR2335055 A1 FR 2335055A1 FR 7537657 A FR7537657 A FR 7537657A FR 7537657 A FR7537657 A FR 7537657A FR 2335055 A1 FR2335055 A1 FR 2335055A1
Authority
FR
France
Prior art keywords
zener diode
integrated circuit
collector
overloading
monolithic integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7537657A
Other languages
French (fr)
Other versions
FR2335055B1 (en
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7537657A priority Critical patent/FR2335055A1/en
Publication of FR2335055A1 publication Critical patent/FR2335055A1/en
Application granted granted Critical
Publication of FR2335055B1 publication Critical patent/FR2335055B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

The monolithic integrated circuit consists of a transistor whose collector/base junction is protected against overloading by a Zener diode integrated into the circuit without making manufacture more complicated. The transistor collector consists of a lightly doped epitaxial layer on a heavily doped substrate. The base is formed by a heavily doped region of the same conduction type as the lightly doped region and extending over the bottom and sides of a 'trench' set into the surface of the device. The distance between this region and the substrate determines the max. base/collector breakdown voltage which is less than the collector/emitter breakdown voltage in the absence of the 'trench' and the region.
FR7537657A 1975-12-09 1975-12-09 Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr. Granted FR2335055A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR7537657A FR2335055A1 (en) 1975-12-09 1975-12-09 Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7537657A FR2335055A1 (en) 1975-12-09 1975-12-09 Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr.

Publications (2)

Publication Number Publication Date
FR2335055A1 true FR2335055A1 (en) 1977-07-08
FR2335055B1 FR2335055B1 (en) 1979-09-28

Family

ID=9163508

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7537657A Granted FR2335055A1 (en) 1975-12-09 1975-12-09 Monolithic integrated circuit including Darlington amplifier - has transistor protected by Zener diode from overloading introduced without complicating mfr.

Country Status (1)

Country Link
FR (1) FR2335055A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293868A (en) * 1978-10-30 1981-10-06 Hitachi, Ltd. Semiconductor device, method of manufacturing the same and application thereof
US4639755A (en) * 1981-09-01 1987-01-27 Kabushiki Kaisha Daini Seikosha Thermosensitive semiconductor device using Darlington circuit
EP0442064A1 (en) * 1990-02-15 1991-08-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
WO2004079789A2 (en) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Interstage isolation in darlington transistors

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4293868A (en) * 1978-10-30 1981-10-06 Hitachi, Ltd. Semiconductor device, method of manufacturing the same and application thereof
US4639755A (en) * 1981-09-01 1987-01-27 Kabushiki Kaisha Daini Seikosha Thermosensitive semiconductor device using Darlington circuit
EP0442064A1 (en) * 1990-02-15 1991-08-21 Siemens Aktiengesellschaft Input protection structure for integrated circuits
WO2004079789A2 (en) * 2003-03-05 2004-09-16 Rensselaer Polytechnic Institute Interstage isolation in darlington transistors
WO2004079789A3 (en) * 2003-03-05 2004-11-11 Rensselaer Polytech Inst Interstage isolation in darlington transistors

Also Published As

Publication number Publication date
FR2335055B1 (en) 1979-09-28

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