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FR2319980A1 - Dispositif optoelectronique semi-conducteur reversible - Google Patents

Dispositif optoelectronique semi-conducteur reversible

Info

Publication number
FR2319980A1
FR2319980A1 FR7523457A FR7523457A FR2319980A1 FR 2319980 A1 FR2319980 A1 FR 2319980A1 FR 7523457 A FR7523457 A FR 7523457A FR 7523457 A FR7523457 A FR 7523457A FR 2319980 A1 FR2319980 A1 FR 2319980A1
Authority
FR
France
Prior art keywords
optoelectronic device
semiconductor optoelectronic
reversible semiconductor
reversible
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7523457A
Other languages
English (en)
Other versions
FR2319980B1 (fr
Inventor
Jacques Lebailly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7523457A priority Critical patent/FR2319980A1/fr
Priority to US05/703,550 priority patent/US4068252A/en
Priority to DE19762631744 priority patent/DE2631744A1/de
Priority to CA257,428A priority patent/CA1070807A/fr
Priority to IT25686/76A priority patent/IT1064793B/it
Priority to GB30803/76A priority patent/GB1549040A/en
Priority to AU16268/76A priority patent/AU503029B2/en
Priority to JP8929176A priority patent/JPS5216988A/ja
Publication of FR2319980A1 publication Critical patent/FR2319980A1/fr
Application granted granted Critical
Publication of FR2319980B1 publication Critical patent/FR2319980B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/40—Transceivers
    • H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Composite Materials (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
FR7523457A 1975-07-28 1975-07-28 Dispositif optoelectronique semi-conducteur reversible Granted FR2319980A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7523457A FR2319980A1 (fr) 1975-07-28 1975-07-28 Dispositif optoelectronique semi-conducteur reversible
US05/703,550 US4068252A (en) 1975-07-28 1976-07-08 Reversible optoelectronic semiconductor device
DE19762631744 DE2631744A1 (de) 1975-07-28 1976-07-15 Optoelektronische reversible halbleiteranordnung
CA257,428A CA1070807A (fr) 1975-07-28 1976-07-21 Dispositif optoelectronique reversible a semiconducteur
IT25686/76A IT1064793B (it) 1975-07-28 1976-07-23 Dispositivo semiconduttore optoelettronico di tipo reversibile
GB30803/76A GB1549040A (en) 1975-07-28 1976-07-23 Semiconductor devices and photocouplers
AU16268/76A AU503029B2 (en) 1975-07-28 1976-07-27 Reversible optoelectronic device
JP8929176A JPS5216988A (en) 1975-07-28 1976-07-28 Reversible photoelectric device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7523457A FR2319980A1 (fr) 1975-07-28 1975-07-28 Dispositif optoelectronique semi-conducteur reversible

Publications (2)

Publication Number Publication Date
FR2319980A1 true FR2319980A1 (fr) 1977-02-25
FR2319980B1 FR2319980B1 (fr) 1977-12-09

Family

ID=9158425

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7523457A Granted FR2319980A1 (fr) 1975-07-28 1975-07-28 Dispositif optoelectronique semi-conducteur reversible

Country Status (8)

Country Link
US (1) US4068252A (fr)
JP (1) JPS5216988A (fr)
AU (1) AU503029B2 (fr)
CA (1) CA1070807A (fr)
DE (1) DE2631744A1 (fr)
FR (1) FR2319980A1 (fr)
GB (1) GB1549040A (fr)
IT (1) IT1064793B (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816312A1 (de) * 1977-04-15 1978-10-19 Thomson Csf Elektrolumineszenz- und photodetektordiode und damit ausgeruestete bus-leitung
EP0001728A1 (fr) * 1977-10-18 1979-05-02 Thomson-Csf Diode émettrice et réceptrice de lumière notamment pour télécommunications optiques
FR2453502A1 (fr) * 1979-02-21 1980-10-31 Honeywell Inc Dispositif semi-conducteur d'emission et de detection de lumiere
EP0070234A2 (fr) * 1981-07-15 1983-01-19 Thomson-Csf Composant optoélectronique dont la structure semiconductrice comporte deux parties respectivement émettrice et réceptrice, et dispositif de régulation d'une diode électroluminescente
FR2522443A1 (fr) * 1982-02-26 1983-09-02 Chevron Res Cellule solaire photovoltaique a jonctions multiples et haut rendement
EP0101872A2 (fr) * 1982-07-19 1984-03-07 Kabushiki Kaisha Toshiba Module de communication optique bidirectionnelle
EP0288267A2 (fr) * 1987-04-21 1988-10-26 Nec Corporation Dispositif optique à semi-conducteur

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396419A1 (fr) * 1977-06-27 1979-01-26 Thomson Csf Diode capable de fonctionner en emetteur et detecteur de lumiere de la meme longueur d'onde alternativement
US4160258A (en) * 1977-11-18 1979-07-03 Bell Telephone Laboratories, Incorporated Optically coupled linear bilateral transistor
US4179702A (en) * 1978-03-09 1979-12-18 Research Triangle Institute Cascade solar cells
FR2423869A1 (fr) * 1978-04-21 1979-11-16 Radiotechnique Compelec Dispositif semiconducteur electroluminescent a recyclage de photons
JPS5574190A (en) * 1978-11-29 1980-06-04 Sharp Corp Photoelectro-converting semiconductor device
USRE31255E (en) 1979-02-21 1983-05-24 Honeywell Inc. Light emitting and light detecting semiconductor device for interfacing with an optical fiber
US4286171A (en) * 1979-03-05 1981-08-25 Canadian Patents & Dev. Ltd. Optoelectric cross-point switch
JPS57115882A (en) * 1981-01-09 1982-07-19 Mitsubishi Electric Corp Two way light transmitting circuit
JPS5892259A (ja) * 1981-11-27 1983-06-01 Fujitsu Ltd 複合半導体装置
GB2117174B (en) * 1982-02-25 1985-09-25 Chevron Res Multilayer photovoltaic solar cell
GB8322235D0 (en) * 1983-08-18 1983-09-21 Standard Telephones Cables Ltd Photodetector
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPS6177737A (ja) * 1984-09-25 1986-04-21 Nippon Telegr & Teleph Corp <Ntt> 光パルス試験器
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US4887138A (en) * 1988-03-23 1989-12-12 The United States Of America As Represented By The Secetary Of The Air Force P-I-N photodetector having a burried junction
US5055894A (en) * 1988-09-29 1991-10-08 The Boeing Company Monolithic interleaved LED/PIN photodetector array
DE4011145A1 (de) * 1990-04-06 1991-10-10 Telefunken Electronic Gmbh Lumineszenz-halbleiterelement
WO2003065416A2 (fr) * 2002-02-01 2003-08-07 Picometrix, Inc. Photodetecteur ameliore
JP5973149B2 (ja) * 2010-10-14 2016-08-23 ローム株式会社 光検出装置
CN107301835B (zh) * 2016-04-13 2019-09-17 群创光电股份有限公司 发光二极管显示器

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1044494A (en) * 1965-04-07 1966-09-28 Mullard Ltd Improvements in and relating to semiconductor devices
US3414733A (en) * 1965-02-15 1968-12-03 Hewlett Packard Co Annularly shaped light emitter and photocell connected by plug-in light conducting pad
US3675026A (en) * 1969-06-30 1972-07-04 Ibm Converter of electromagnetic radiation to electrical power
US3838359A (en) * 1973-11-23 1974-09-24 Bell Telephone Labor Inc Gain asymmetry in heterostructure junction lasers operating in a fundamental transverse mode
US3993963A (en) * 1974-06-20 1976-11-23 Bell Telephone Laboratories, Incorporated Heterostructure devices, a light guiding layer having contiguous zones of different thickness and bandgap and method of making same
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2816312A1 (de) * 1977-04-15 1978-10-19 Thomson Csf Elektrolumineszenz- und photodetektordiode und damit ausgeruestete bus-leitung
EP0001728A1 (fr) * 1977-10-18 1979-05-02 Thomson-Csf Diode émettrice et réceptrice de lumière notamment pour télécommunications optiques
FR2453502A1 (fr) * 1979-02-21 1980-10-31 Honeywell Inc Dispositif semi-conducteur d'emission et de detection de lumiere
EP0070234A2 (fr) * 1981-07-15 1983-01-19 Thomson-Csf Composant optoélectronique dont la structure semiconductrice comporte deux parties respectivement émettrice et réceptrice, et dispositif de régulation d'une diode électroluminescente
FR2509910A1 (fr) * 1981-07-15 1983-01-21 Thomson Csf Composant optoelectronique dont la structure semiconductrice comporte deux parties respectivement emettrice et receptrice, et dispositif de regulation d'une diode electroluminescente
EP0070234A3 (fr) * 1981-07-15 1983-07-20 Thomson-Csf Composant optoélectronique dont la structure semiconductrice comporte deux parties respectivement émettrice et réceptrice, et dispositif de régulation d'une diode électroluminescente
FR2522443A1 (fr) * 1982-02-26 1983-09-02 Chevron Res Cellule solaire photovoltaique a jonctions multiples et haut rendement
EP0101872A2 (fr) * 1982-07-19 1984-03-07 Kabushiki Kaisha Toshiba Module de communication optique bidirectionnelle
EP0101872A3 (en) * 1982-07-19 1986-06-11 Kabushiki Kaisha Toshiba Duplex optical communication module unit
US4695858A (en) * 1982-07-19 1987-09-22 Tokyo Shibaura Denki Kabushiki Kaisha Duplex optical communication module unit
EP0288267A2 (fr) * 1987-04-21 1988-10-26 Nec Corporation Dispositif optique à semi-conducteur
EP0288267A3 (en) * 1987-04-21 1989-11-23 Nec Corporation An optical semiconductor device

Also Published As

Publication number Publication date
GB1549040A (en) 1979-08-01
AU503029B2 (en) 1979-08-23
AU1626876A (en) 1978-02-02
JPS5216988A (en) 1977-02-08
CA1070807A (fr) 1980-01-29
IT1064793B (it) 1985-02-25
DE2631744A1 (de) 1977-02-10
JPS5642149B2 (fr) 1981-10-02
US4068252A (en) 1978-01-10
FR2319980B1 (fr) 1977-12-09
DE2631744C2 (fr) 1987-11-12

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