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FR2301097A1 - Redresseur a semiconducteurs - Google Patents

Redresseur a semiconducteurs

Info

Publication number
FR2301097A1
FR2301097A1 FR7603425A FR7603425A FR2301097A1 FR 2301097 A1 FR2301097 A1 FR 2301097A1 FR 7603425 A FR7603425 A FR 7603425A FR 7603425 A FR7603425 A FR 7603425A FR 2301097 A1 FR2301097 A1 FR 2301097A1
Authority
FR
France
Prior art keywords
semiconductor rectifier
rectifier
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7603425A
Other languages
English (en)
Other versions
FR2301097B3 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2301097A1 publication Critical patent/FR2301097A1/fr
Application granted granted Critical
Publication of FR2301097B3 publication Critical patent/FR2301097B3/fr
Granted legal-status Critical Current

Links

Classifications

    • H01L29/861—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/914—Polysilicon containing oxygen, nitrogen, or carbon, e.g. sipos
FR7603425A 1975-02-13 1976-02-09 Redresseur a semiconducteurs Granted FR2301097A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2506102A DE2506102C3 (de) 1975-02-13 1975-02-13 Halbleitergleichrichter

Publications (2)

Publication Number Publication Date
FR2301097A1 true FR2301097A1 (fr) 1976-09-10
FR2301097B3 FR2301097B3 (fr) 1979-10-12

Family

ID=5938817

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7603425A Granted FR2301097A1 (fr) 1975-02-13 1976-02-09 Redresseur a semiconducteurs

Country Status (7)

Country Link
US (1) US4074303A (fr)
JP (1) JPS51107071A (fr)
CA (1) CA1049661A (fr)
DE (1) DE2506102C3 (fr)
FR (1) FR2301097A1 (fr)
GB (1) GB1484218A (fr)
SE (1) SE414246B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550013A1 (fr) * 1983-07-29 1985-02-01 Ates Componenti Elettron Dispositif pour supprimer les surtensions a semi-conducteurs, dont la tension d'amorcage peut etre predeterminee avec precision, et son procede de fabrication

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2050694B (en) * 1979-05-07 1983-09-28 Nippon Telegraph & Telephone Electrode structure for a semiconductor device
DE3631136A1 (de) * 1986-09-12 1988-03-24 Siemens Ag Diode mit weichem abrissverhalten
DE3939324A1 (de) * 1989-11-28 1991-05-29 Eupec Gmbh & Co Kg Leistungs-halbleiterbauelement mit emitterkurzschluessen
DE19843893A1 (de) * 1998-09-24 2000-04-06 Siemens Ag Leistungshalbleiterdiode
DE102004044141A1 (de) * 2004-09-13 2006-03-30 Robert Bosch Gmbh Halbleiteranordnung zur Spannungsbegrenzung
US9385181B2 (en) 2014-01-23 2016-07-05 Infineon Technologies Ag Semiconductor diode and method of manufacturing a semiconductor diode
CN104659081A (zh) * 2015-03-09 2015-05-27 江苏中科君芯科技有限公司 改善恢复耐量的二极管结构
CN113169169A (zh) 2018-12-03 2021-07-23 镁可微波技术有限公司 具有多厚度本征区的pin二极管
EP3925002A1 (fr) * 2019-02-12 2021-12-22 MACOM Technology Solutions Holdings, Inc. Limiteurs à diode de région multi-i monolithiques

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2971139A (en) * 1959-06-16 1961-02-07 Fairchild Semiconductor Semiconductor switching device
US3249831A (en) * 1963-01-04 1966-05-03 Westinghouse Electric Corp Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient
US3331000A (en) * 1963-10-18 1967-07-11 Gen Electric Gate turn off semiconductor switch having a composite gate region with different impurity concentrations
US3476992A (en) * 1967-12-26 1969-11-04 Westinghouse Electric Corp Geometry of shorted-cathode-emitter for low and high power thyristor
US3599061A (en) * 1969-09-30 1971-08-10 Usa Scr emitter short patterns
JPS4918279A (fr) * 1972-06-08 1974-02-18
JPS4940391A (fr) * 1972-08-28 1974-04-15

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550013A1 (fr) * 1983-07-29 1985-02-01 Ates Componenti Elettron Dispositif pour supprimer les surtensions a semi-conducteurs, dont la tension d'amorcage peut etre predeterminee avec precision, et son procede de fabrication

Also Published As

Publication number Publication date
GB1484218A (en) 1977-09-01
US4074303A (en) 1978-02-14
DE2506102C3 (de) 1982-03-25
SE414246B (sv) 1980-07-14
SE7601541L (sv) 1976-08-16
DE2506102A1 (de) 1976-08-26
JPS51107071A (fr) 1976-09-22
CA1049661A (fr) 1979-02-27
FR2301097B3 (fr) 1979-10-12
DE2506102B2 (de) 1981-07-02

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