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FR2341204B1 - - Google Patents

Info

Publication number
FR2341204B1
FR2341204B1 FR7635835A FR7635835A FR2341204B1 FR 2341204 B1 FR2341204 B1 FR 2341204B1 FR 7635835 A FR7635835 A FR 7635835A FR 7635835 A FR7635835 A FR 7635835A FR 2341204 B1 FR2341204 B1 FR 2341204B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7635835A
Other versions
FR2341204A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2341204A1 publication Critical patent/FR2341204A1/fr
Application granted granted Critical
Publication of FR2341204B1 publication Critical patent/FR2341204B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electronic Switches (AREA)
FR7635835A 1976-02-12 1976-11-26 Dispositif semi-conducteur Granted FR2341204A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1420076A JPS5297684A (en) 1976-02-12 1976-02-12 Semiconductor element

Publications (2)

Publication Number Publication Date
FR2341204A1 FR2341204A1 (fr) 1977-09-09
FR2341204B1 true FR2341204B1 (fr) 1982-08-20

Family

ID=11854463

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7635835A Granted FR2341204A1 (fr) 1976-02-12 1976-11-26 Dispositif semi-conducteur

Country Status (8)

Country Link
US (1) US4338617A (fr)
JP (1) JPS5297684A (fr)
CA (1) CA1068411A (fr)
CH (1) CH612795A5 (fr)
DE (2) DE2659909C2 (fr)
FR (1) FR2341204A1 (fr)
GB (3) GB1578759A (fr)
SE (2) SE431697B (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL182796C (nl) 1978-03-20 1988-05-16 Monsanto Co Werkwijze voor het recirculeren van waterstof bij de bereiding van ammoniak.
JPS5933272B2 (ja) * 1978-06-19 1984-08-14 株式会社日立製作所 半導体装置
JPS6043032B2 (ja) * 1978-09-14 1985-09-26 株式会社日立製作所 ゲートターンオフサイリスタ
JPS6019147B2 (ja) * 1979-01-24 1985-05-14 株式会社日立製作所 ゲ−ト・タ−ン・オフ・サイリスタ
US4295059A (en) * 1979-03-30 1981-10-13 General Electric Company High gain latching Darlington transistor
JPS60250670A (ja) * 1984-05-25 1985-12-11 Mitsubishi Electric Corp 半導体装置
JP6447028B2 (ja) * 2014-11-10 2019-01-09 株式会社デンソー ダイオード
CN107735856B (zh) 2015-07-03 2021-11-30 未来儿株式会社 基板收纳容器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1413219A (fr) * 1963-09-03 1965-10-08 Gen Electric Perfectionnement aux semiconducteurs de commutation
CH474154A (de) * 1967-02-10 1969-06-15 Licentia Gmbh Halbleiterbauelement
CA845885A (en) * 1967-08-21 1970-06-30 E. Burke Donald Semiconductor switching device
US3619652A (en) * 1969-03-10 1971-11-09 Integrated Motorcontrol Inc Motor control device
US3590339A (en) * 1970-01-30 1971-06-29 Westinghouse Electric Corp Gate controlled switch transistor drive integrated circuit (thytran)
GB1303338A (fr) * 1970-10-06 1973-01-17
JPS5118811B2 (fr) * 1972-08-01 1976-06-12
DE2310570C3 (de) * 1973-03-02 1980-08-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines überkopfzündfesten Thyristors
JPS5849104B2 (ja) * 1976-01-12 1983-11-01 三菱電機株式会社 半導体スイツチ

Also Published As

Publication number Publication date
GB1578758A (en) 1980-11-12
US4338617A (en) 1982-07-06
FR2341204A1 (fr) 1977-09-09
SE7710046L (sv) 1977-09-07
GB1578760A (en) 1980-11-12
CA1068411A (fr) 1979-12-18
DE2659909A1 (de) 1977-11-03
DE2653432A1 (de) 1977-08-25
GB1578759A (en) 1980-11-12
CH612795A5 (fr) 1979-08-15
JPS5297684A (en) 1977-08-16
SE431697B (sv) 1984-02-20
SE7613161L (sv) 1977-08-13
DE2659909C2 (de) 1982-11-18

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Legal Events

Date Code Title Description
ST Notification of lapse