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FR2243523B1 - - Google Patents

Info

Publication number
FR2243523B1
FR2243523B1 FR7430482A FR7430482A FR2243523B1 FR 2243523 B1 FR2243523 B1 FR 2243523B1 FR 7430482 A FR7430482 A FR 7430482A FR 7430482 A FR7430482 A FR 7430482A FR 2243523 B1 FR2243523 B1 FR 2243523B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7430482A
Other versions
FR2243523A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2243523A1 publication Critical patent/FR2243523A1/fr
Application granted granted Critical
Publication of FR2243523B1 publication Critical patent/FR2243523B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
    • H01L21/7621—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region the recessed region having a shape other than rectangular, e.g. rounded or oblique shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/143—Shadow masking

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Weting (AREA)
FR7430482A 1973-09-07 1974-09-09 Expired FR2243523B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4213173A GB1437112A (en) 1973-09-07 1973-09-07 Semiconductor device manufacture

Publications (2)

Publication Number Publication Date
FR2243523A1 FR2243523A1 (fr) 1975-04-04
FR2243523B1 true FR2243523B1 (fr) 1979-01-05

Family

ID=10422998

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7430482A Expired FR2243523B1 (fr) 1973-09-07 1974-09-09

Country Status (5)

Country Link
US (1) US3958040A (fr)
JP (1) JPS5342635B2 (fr)
DE (1) DE2441170C2 (fr)
FR (1) FR2243523B1 (fr)
GB (1) GB1437112A (fr)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3966514A (en) * 1975-06-30 1976-06-29 Ibm Corporation Method for forming dielectric isolation combining dielectric deposition and thermal oxidation
US3961999A (en) * 1975-06-30 1976-06-08 Ibm Corporation Method for forming recessed dielectric isolation with a minimized "bird's beak" problem
JPS5246784A (en) * 1975-10-11 1977-04-13 Hitachi Ltd Process for production of semiconductor device
JPS5922381B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
JPS5396671A (en) * 1977-02-03 1978-08-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
NL7706802A (nl) * 1977-06-21 1978-12-27 Philips Nv Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.
JPS54115085A (en) * 1978-02-28 1979-09-07 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS5538084A (en) * 1978-09-11 1980-03-17 Nec Corp Semiconductor integrated circuit device
US4278705A (en) * 1979-11-08 1981-07-14 Bell Telephone Laboratories, Incorporated Sequentially annealed oxidation of silicon to fill trenches with silicon dioxide
US4271583A (en) * 1980-03-10 1981-06-09 Bell Telephone Laboratories, Incorporated Fabrication of semiconductor devices having planar recessed oxide isolation region
US4333965A (en) * 1980-09-15 1982-06-08 General Electric Company Method of making integrated circuits
EP0051488B1 (fr) * 1980-11-06 1985-01-30 Kabushiki Kaisha Toshiba Procédé de fabrication d'un dispositif semiconducteur
US4506435A (en) * 1981-07-27 1985-03-26 International Business Machines Corporation Method for forming recessed isolated regions
US4454646A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
US4454647A (en) * 1981-08-27 1984-06-19 International Business Machines Corporation Isolation for high density integrated circuits
US4372033A (en) * 1981-09-08 1983-02-08 Ncr Corporation Method of making coplanar MOS IC structures
US4563227A (en) * 1981-12-08 1986-01-07 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a semiconductor device
US4443932A (en) * 1982-01-18 1984-04-24 Motorla, Inc. Self-aligned oxide isolated process and device
US4398992A (en) * 1982-05-20 1983-08-16 Hewlett-Packard Company Defect free zero oxide encroachment process for semiconductor fabrication
DE3225961A1 (de) * 1982-07-10 1984-01-12 Engl, Walter L., Prof. Dr.rer.nat., 5120 Herzogenrath Verfahren zum herstellen eines isolationsbereiches bei halbleiteranordnungen
NL187373C (nl) * 1982-10-08 1991-09-02 Philips Nv Werkwijze voor vervaardiging van een halfgeleiderinrichting.
JPS5990925A (ja) * 1982-11-17 1984-05-25 Matsushita Electronics Corp 半導体装置の製造方法
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
NL8401711A (nl) * 1984-05-29 1985-12-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting met een siliciumlichaam waarin plaatselijk een verzonken oxidelaag is aangebracht.
US4561172A (en) * 1984-06-15 1985-12-31 Texas Instruments Incorporated Integrated circuit fabrication method utilizing selective etching and oxidation to form isolation regions
US4538343A (en) * 1984-06-15 1985-09-03 Texas Instruments Incorporated Channel stop isolation technology utilizing two-step etching and selective oxidation with sidewall masking
US4583281A (en) * 1985-03-13 1986-04-22 General Electric Company Method of making an integrated circuit
US4631113A (en) * 1985-12-23 1986-12-23 Signetics Corporation Method for manufacturing a narrow line of photosensitive material
US4862232A (en) * 1986-09-22 1989-08-29 General Motors Corporation Transistor structure for high temperature logic circuits with insulation around source and drain regions
US4714685A (en) * 1986-12-08 1987-12-22 General Motors Corporation Method of fabricating self-aligned silicon-on-insulator like devices
US4797718A (en) * 1986-12-08 1989-01-10 Delco Electronics Corporation Self-aligned silicon MOS device
US4749441A (en) * 1986-12-11 1988-06-07 General Motors Corporation Semiconductor mushroom structure fabrication
US4903107A (en) * 1986-12-29 1990-02-20 General Electric Company Buried oxide field isolation structure with composite dielectric
US4923563A (en) * 1987-06-15 1990-05-08 Ncr Corporation Semiconductor field oxide formation process using a sealing sidewall of consumable nitride
US4760036A (en) * 1987-06-15 1988-07-26 Delco Electronics Corporation Process for growing silicon-on-insulator wafers using lateral epitaxial growth with seed window oxidation
DE3728348A1 (de) * 1987-08-25 1989-03-09 Siemens Ag Mehrlagenverdrahtung fuer hoechstintegrierte halbleiterbauelemente
JPH0227338A (ja) * 1988-07-15 1990-01-30 Konica Corp 写真フィルム用マガジン
US5443998A (en) * 1989-08-01 1995-08-22 Cypress Semiconductor Corp. Method of forming a chlorinated silicon nitride barrier layer
US5118641A (en) * 1990-09-13 1992-06-02 Micron Technology, Inc. Methods for reducing encroachment of the field oxide into the active area on a silicon integrated circuit
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.
KR950021390A (ko) * 1993-12-29 1995-07-26 김주용 반도체 소자의 소자분리막 형성 방법
KR0149527B1 (ko) * 1994-06-15 1998-10-01 김주용 반도체 소자의 고전압용 트랜지스터 및 그 제조방법
US5861339A (en) * 1995-10-27 1999-01-19 Integrated Device Technology, Inc. Recessed isolation with double oxidation
US5726093A (en) * 1995-12-06 1998-03-10 Taiwan Semiconductor Manufacturing Company Ltd. Two-step planer field oxidation method
US7118991B2 (en) * 2004-04-01 2006-10-10 Delphi Technologies, Inc. Encapsulation wafer process
US9142400B1 (en) 2012-07-17 2015-09-22 Stc.Unm Method of making a heteroepitaxial layer on a seed area
US11646361B2 (en) 2021-03-04 2023-05-09 Globalfoundries U.S. Inc. Electrical isolation structure using reverse dopant implantation from source/drain region in semiconductor fin

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1208578A (en) * 1966-10-05 1970-10-14 Philips Electronic Associated Methods of manufacturing semiconductor devices
GB1235179A (en) * 1967-06-08 1971-06-09 Philips Electronic Associated Methods of manufacturing semiconductor devices
GB1235178A (en) * 1967-06-08 1971-06-09 Philips Electronic Associated Methods of manufacturing semiconductor devices
NL152707B (nl) * 1967-06-08 1977-03-15 Philips Nv Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan.
NL157662B (nl) * 1969-05-22 1978-08-15 Philips Nv Werkwijze voor het etsen van een oppervlak onder toepassing van een etsmasker, alsmede voorwerpen, verkregen door toepassing van deze werkwijze.
NL170348C (nl) * 1970-07-10 1982-10-18 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een tegen dotering en tegen thermische oxydatie maskerend masker wordt aangebracht, de door de vensters in het masker vrijgelaten delen van het oppervlak worden onderworpen aan een etsbehandeling voor het vormen van verdiepingen en het halfgeleiderlichaam met het masker wordt onderworpen aan een thermische oxydatiebehandeling voor het vormen van een oxydepatroon dat de verdiepingen althans ten dele opvult.
NL7113561A (fr) * 1971-10-02 1973-04-04
US3860466A (en) * 1971-10-22 1975-01-14 Texas Instruments Inc Nitride composed masking for integrated circuits
US3810796A (en) * 1972-08-31 1974-05-14 Texas Instruments Inc Method of forming dielectrically isolated silicon diode array vidicon target
DE2409910C3 (de) * 1974-03-01 1979-03-15 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer Halbleiteranordnung

Also Published As

Publication number Publication date
US3958040A (en) 1976-05-18
FR2243523A1 (fr) 1975-04-04
JPS5342635B2 (fr) 1978-11-13
DE2441170C2 (de) 1984-07-12
GB1437112A (en) 1976-05-26
JPS5065174A (fr) 1975-06-02
DE2441170A1 (de) 1975-03-13

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