FI91573C - Menetelmä elektronisten ja elektro-optisten komponenttien ja piirien valmistamiseksi - Google Patents
Menetelmä elektronisten ja elektro-optisten komponenttien ja piirien valmistamiseksi Download PDFInfo
- Publication number
- FI91573C FI91573C FI900037A FI900037A FI91573C FI 91573 C FI91573 C FI 91573C FI 900037 A FI900037 A FI 900037A FI 900037 A FI900037 A FI 900037A FI 91573 C FI91573 C FI 91573C
- Authority
- FI
- Finland
- Prior art keywords
- polymer
- metal
- conductive polymer
- poly
- insulator
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 229920000642 polymer Polymers 0.000 claims description 42
- 229920001940 conductive polymer Polymers 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 17
- 239000012212 insulator Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims 1
- 229920002554 vinyl polymer Polymers 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000005669 field effect Effects 0.000 description 7
- 102220036926 rs139866691 Human genes 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 229920002848 poly(3-alkoxythiophenes) Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 2
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229920001197 polyacetylene Polymers 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
- H01B1/124—Intrinsically conductive polymers
- H01B1/127—Intrinsically conductive polymers comprising five-membered aromatic rings in the main chain, e.g. polypyrroles, polythiophenes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/23—Schottky diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/14—Schottky barrier contacts
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
- Photovoltaic Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Claims (8)
1. Tapa valmistaa johtaviin polymeereihin perustuvia elektronisia ja elektro-optisia komponentteja ja piirejå, tunnettu siitå, ettå 5 komponentin johtavan polymeerin ja toisen materiaalin vålinen yksi tai useampi rajapinta muodostetaan johtavan polymeerin sulattamisen avulla.
2. Patenttivaatimuksen 1 mukainen tapa, tunnettu siitå, ettå johtavan polymeerin ja metallin vålinen rajapinta muodostetaan purista- 10 malla kahta pintaa toisiaan vasten polymeerin sulattamiseen riittåvån låmmittåmisen alaisena siten, ettå materiaalit kiinnittyvåt toisiaan vasten.
3. Patenttivaatimuksen 1 mukainen tapa, tunnettu siitå, ettå 15 johtavan polymeerin ja eristeen vålinen rajapinta muodostetaan purista- malla kahta pintaa toisiaan vasten polymeerin sulattamiseen riittåvån låmmittåmisen alaisena siten, ettå materiaalit kiinnittyvåt toisiaan vasten.
4. Patenttivaatimuksen 1 mukainen tapa, tunnettu siitå, ettå johtavan polymeerin ja puolijohteen vålinen rajapinta muodostetaan puristamalla kahta pintaa toisiaan vasten polymeerin sulattamiseen riittåvån låmmittåmisen alaisena siten, ettå materiaalit kiinnittyvåt toisiaan vasten. * 25
5. Patenttivaatimuksen 2 mukainen tapa, tunnettu siitå, ettå metalli on mikå tahansa periodisen jårjestelmån mukainen metalli, edul-lisesti Au, Cr, Ti, Al, In, Pt.
6. Patenttivaatimuksen 3 mukainen tapa, tunnettu siitå, ettå eriste on epåorgaaninen tai polymeerieriste.
7. Patenttivaatimuksen 4 mukainen tapa, tunnettu siitå, ettå puolijohteen muodostaa Si, amorfinen piihydridi (a-Si:H), GaAs, CuInSe, 35 Ge tai polymeeripuolijohde. I! 91573
8. Jonkin patenttivaatimuksen 1-7 mukainen tapa, tunnettu siitå, ettå johtava polymeeri on sulatettavissa oleva poly(3-oktyyli-tiofeeni), poly(3-alkyylitiofeeni), poly(alkyyliparafenyyli), poly(alkyylitiofeeni vinyyli), polyalkyylipyrroliini tai vastaava. i
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI900037A FI91573C (fi) | 1990-01-04 | 1990-01-04 | Menetelmä elektronisten ja elektro-optisten komponenttien ja piirien valmistamiseksi |
US07/630,527 US5213983A (en) | 1990-01-04 | 1990-12-20 | Method for the preparation of electronic and electro-optical components and circuits using conductive polymers |
EP90125120A EP0442123A1 (en) | 1990-01-04 | 1990-12-21 | Method for preparing electronic and electro-optical components and circuits based on conducting polymers |
JP3009989A JPH04211175A (ja) | 1990-01-04 | 1991-01-04 | 電子および電子光学部品と回路の製造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI900037 | 1990-01-04 | ||
FI900037A FI91573C (fi) | 1990-01-04 | 1990-01-04 | Menetelmä elektronisten ja elektro-optisten komponenttien ja piirien valmistamiseksi |
Publications (4)
Publication Number | Publication Date |
---|---|
FI900037A0 FI900037A0 (fi) | 1990-01-04 |
FI900037A FI900037A (fi) | 1991-07-05 |
FI91573B FI91573B (fi) | 1994-03-31 |
FI91573C true FI91573C (fi) | 1994-07-11 |
Family
ID=8529642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI900037A FI91573C (fi) | 1990-01-04 | 1990-01-04 | Menetelmä elektronisten ja elektro-optisten komponenttien ja piirien valmistamiseksi |
Country Status (4)
Country | Link |
---|---|
US (1) | US5213983A (fi) |
EP (1) | EP0442123A1 (fi) |
JP (1) | JPH04211175A (fi) |
FI (1) | FI91573C (fi) |
Families Citing this family (74)
Publication number | Priority date | Publication date | Assignee | Title |
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US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
JP3233699B2 (ja) * | 1992-09-04 | 2001-11-26 | 株式会社サンギ | 半導体集積回路 |
US5334539A (en) * | 1993-01-29 | 1994-08-02 | Iowa State University Research Foundation, Inc. | Fabrication of poly(p-phenyleneacetylene) light-emitting diodes |
US5352906A (en) * | 1993-01-29 | 1994-10-04 | Iowa State University Research Foundation, Inc. | Poly (p-phenyleneneacetylene) light-emitting diodes |
US5384953A (en) * | 1993-07-21 | 1995-01-31 | International Business Machines Corporation | Structure and a method for repairing electrical lines |
US5532025A (en) * | 1993-07-23 | 1996-07-02 | Kinlen; Patrick J. | Corrosion inhibiting compositions |
US7109968B2 (en) | 1995-07-20 | 2006-09-19 | E Ink Corporation | Non-spherical cavity electrophoretic displays and methods and materials for making the same |
US6727881B1 (en) | 1995-07-20 | 2004-04-27 | E Ink Corporation | Encapsulated electrophoretic displays and methods and materials for making the same |
US6515649B1 (en) | 1995-07-20 | 2003-02-04 | E Ink Corporation | Suspended particle displays and materials for making the same |
JP3420399B2 (ja) * | 1995-07-28 | 2003-06-23 | キヤノン株式会社 | 発光素子 |
US6067185A (en) | 1997-08-28 | 2000-05-23 | E Ink Corporation | Process for creating an encapsulated electrophoretic display |
DE69917441T2 (de) * | 1998-03-18 | 2004-09-23 | E-Ink Corp., Cambridge | Elektrophoretische anzeige |
EP1105772B1 (en) | 1998-04-10 | 2004-06-23 | E-Ink Corporation | Electronic displays using organic-based field effect transistors |
US7075502B1 (en) | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
US20050147534A1 (en) | 1998-05-05 | 2005-07-07 | Massachusetts Institute Of Technology | Emissive sensors and devices incorporating these sensors |
US8198096B2 (en) | 1998-05-05 | 2012-06-12 | Massachusetts Institute Of Technology | Emissive polymers and devices incorporating these polymers |
EP1281744B1 (en) * | 1998-05-05 | 2008-09-24 | Massachusetts Institute Of Technology | Emissive polymers and devices incorporating these polymers |
WO1999057222A1 (en) * | 1998-05-05 | 1999-11-11 | Massachusetts Institute Of Technology | Emissive polymers and devices incorporating these polymers |
US6473072B1 (en) | 1998-05-12 | 2002-10-29 | E Ink Corporation | Microencapsulated electrophoretic electrostatically-addressed media for drawing device applications |
DE69920228T2 (de) | 1998-07-08 | 2005-01-27 | E-Ink Corp., Cambridge | Verfahren zur verbesserung der farbwiedergabe in elektrophoretischen vorrichtungen, welche mikrokapseln verwenden |
CA2346167C (en) | 1998-10-07 | 2007-05-22 | E Ink Corporation | Illumination system for nonemissive electronic displays |
JP4582914B2 (ja) | 1999-04-06 | 2010-11-17 | イー インク コーポレイション | カプセルベースの起電ディスプレイにおける使用のための液滴を作製するための方法 |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
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US8115729B2 (en) | 1999-05-03 | 2012-02-14 | E Ink Corporation | Electrophoretic display element with filler particles |
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US7875975B2 (en) | 2000-08-18 | 2011-01-25 | Polyic Gmbh & Co. Kg | Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag |
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ATE427333T1 (de) | 2000-08-21 | 2009-04-15 | Massachusetts Inst Technology | Zusamensetzung enthaltend iptycen-polymere mit grossem freiem innenvolumen |
DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
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US7462325B2 (en) | 2001-11-30 | 2008-12-09 | Nomadics, Inc. | Luminescent polymer particles |
US6603141B2 (en) * | 2001-12-28 | 2003-08-05 | Motorola, Inc. | Organic semiconductor and method |
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WO2004047144A2 (de) | 2002-11-19 | 2004-06-03 | Polyic Gmbh & Co.Kg | Organisches elektronisches bauelement mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
DE10302149A1 (de) | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
DE10340643B4 (de) | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
DE10349963A1 (de) | 2003-10-24 | 2005-06-02 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung einer Folie |
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JP4100351B2 (ja) * | 2004-02-09 | 2008-06-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
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ATE518258T1 (de) * | 2004-04-27 | 2011-08-15 | Creator Technology Bv | Verfahren zur bildung eines organischen halbleiterbauelements durch eine schmelztechnik |
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DE102004059464A1 (de) | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
DE102004059465A1 (de) | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
DE102005017655B4 (de) | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
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JP5061449B2 (ja) * | 2005-10-19 | 2012-10-31 | ソニー株式会社 | 半導体装置の製造方法 |
JP2007115804A (ja) * | 2005-10-19 | 2007-05-10 | Sony Corp | 半導体装置の製造方法 |
US8158437B2 (en) | 2006-08-04 | 2012-04-17 | Massachusetts Institute Of Technology | Luminescent detection of hydrazine and hydrazine derivatives |
WO2008042289A2 (en) | 2006-09-29 | 2008-04-10 | Massachusetts Institute Of Technology | Polymer synthetic technique |
US8802447B2 (en) | 2006-10-05 | 2014-08-12 | Massachusetts Institute Of Technology | Emissive compositions with internal standard and related techniques |
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JP5445590B2 (ja) * | 2009-11-13 | 2014-03-19 | 株式会社島津製作所 | 薄膜トランジスタの製造方法 |
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US4214916A (en) * | 1979-02-05 | 1980-07-29 | Arthur Bradley | Thin film photovoltaic converter and method of preparing same |
DE3201482A1 (de) * | 1982-01-20 | 1983-09-08 | Bayer Ag, 5090 Leverkusen | Mehrschichten-flaechengebilde |
DE3223545A1 (de) * | 1982-06-24 | 1983-12-29 | Basf Ag, 6700 Ludwigshafen | Copolymere von pyrrolen, verfahren zu ihrer herstellung sowie ihre verwendung |
US4609971A (en) * | 1983-08-11 | 1986-09-02 | North American Philips Corporation | Electrolytic capacitor with polymer conductor |
DE3421296A1 (de) * | 1984-06-08 | 1985-12-12 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von p-gedopten polyheterocyclen |
JPS6189663A (ja) * | 1984-10-08 | 1986-05-07 | Nippon Telegr & Teleph Corp <Ntt> | 高分子半導体素子およびその製造方法 |
DE3507419A1 (de) * | 1985-03-02 | 1986-09-04 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von verbundstoffen aus metallen und elektrisch leitfaehigen polymeren |
DE3510031A1 (de) * | 1985-03-20 | 1986-09-25 | Basf Ag, 6700 Ludwigshafen | Verfahren zur herstellung von elektrisch leitfaehigen schaumstoffen |
JPS6231175A (ja) * | 1985-08-02 | 1987-02-10 | Mitsubishi Electric Corp | 電界効果型トランジスタ |
US4929389A (en) * | 1988-02-12 | 1990-05-29 | The United States Of America As Represented By The Department Of Energy | Water-soluble conductive polymers |
-
1990
- 1990-01-04 FI FI900037A patent/FI91573C/fi not_active IP Right Cessation
- 1990-12-20 US US07/630,527 patent/US5213983A/en not_active Expired - Fee Related
- 1990-12-21 EP EP90125120A patent/EP0442123A1/en not_active Withdrawn
-
1991
- 1991-01-04 JP JP3009989A patent/JPH04211175A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FI900037A0 (fi) | 1990-01-04 |
EP0442123A1 (en) | 1991-08-21 |
US5213983A (en) | 1993-05-25 |
FI91573B (fi) | 1994-03-31 |
FI900037A (fi) | 1991-07-05 |
JPH04211175A (ja) | 1992-08-03 |
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Owner name: NESTE OY |