EP3907565A1 - Verfahren zur herstellung einer uhrenkomponente aus silizium - Google Patents
Verfahren zur herstellung einer uhrenkomponente aus silizium Download PDFInfo
- Publication number
- EP3907565A1 EP3907565A1 EP20173465.4A EP20173465A EP3907565A1 EP 3907565 A1 EP3907565 A1 EP 3907565A1 EP 20173465 A EP20173465 A EP 20173465A EP 3907565 A1 EP3907565 A1 EP 3907565A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- silicon
- layer
- component
- watch component
- watch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 64
- 239000010703 silicon Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 17
- 238000011282 treatment Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B15/00—Escapements
- G04B15/14—Component parts or constructional details, e.g. construction of the lever or the escape wheel
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B13/00—Gearwork
- G04B13/02—Wheels; Pinions; Spindles; Pivots
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B17/00—Mechanisms for stabilising frequency
- G04B17/04—Oscillators acting by spring tension
- G04B17/06—Oscillators with hairsprings, e.g. balance
- G04B17/066—Manufacture of the spiral spring
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B18/00—Mechanisms for setting frequency
- G04B18/08—Component parts or constructional details
-
- G—PHYSICS
- G04—HOROLOGY
- G04B—MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME PIECES USING THE POSITION OF THE SUN, MOON OR STARS
- G04B19/00—Indicating the time by visual means
- G04B19/04—Hands; Discs with a single mark or the like
- G04B19/042—Construction and manufacture of the hands; arrangements for increasing reading accuracy
Definitions
- the present invention relates to a method of manufacturing a watch component in silicon.
- Silicon watch components are generally manufactured by deep reactive ionic etching - a technique also known by the English abbreviation DRIE - of a wafer of silicon-based material.
- the wafer can be a silicon wafer that is etched in its entire thickness (see for example the patent applications EP 1722281 , EP 2145857 and EP 3181938 ) or a silicon on insulator substrate known as SOI (silicon on insulator) comprising an upper layer of silicon and a lower layer of silicon linked by an intermediate layer of silicon oxide, the upper layer of silicon being that in which the etching is carried out (cf. for example patent applications WO 2019/180177 and WO 2019/180596 ).
- the silicon-on-insulator substrate has the advantage of having a rigid support (the lower layer of silicon, of greater thickness than the upper layer) facilitating its handling and its maintenance and a layer of stop (the intermediate layer of silicon oxide) making it possible to stop the etching.
- Such fasteners which connect the periphery of each component to the wafer, can pose a problem, in particular when the periphery of the component is a functional surface which must not see its function disturbed by fastener residues or when the external surface of the component must present a particularly neat appearance, as for example in the case of a needle.
- the functional external surface does not have free space of sufficient size to be able to insert a sufficiently robust fastener therein.
- the patent application WO 2019/166922 proposes a method of manufacturing a watch balance-spring according to which one is provided with a silicon substrate carrying a layer of silicon oxide, one forms through holes in the layer of silicon oxide, one grows by epitaxy a layer of silicon on the layer of silicon oxide, this layer of silicon filling the through holes to form fasteners or bridges of material, balance springs are etched in the layer of silicon, the layer of silicon oxide is removed, balance springs remaining attached to the silicon substrate by said fasteners, the balance springs are subjected to heat treatments and finally the balance springs are detached from the silicon substrate.
- the spirals remain bonded to the substrate after etching by clips extending out of the plane of the spirals rather than between the outer surface of the last turn and the etching silicon layer as is generally the case.
- this process does not allow the use of commercially available silicon-on-insulator substrates, and growing the silicon layer in which the balance-springs will be formed by epitaxy is a complicated operation.
- the present invention aims to remedy the aforementioned drawbacks, or at least to mitigate them, and to this end proposes a manufacturing process according to claim 1, particular embodiments being defined in the dependent claims.
- the method of manufacturing a silicon watch component according to the invention begins with a first step consisting in providing a wafer 1 of the silicon-on-insulator type ( figure 1 (a) ).
- This wafer comprises an upper layer of silicon 2, a lower layer of silicon 3 and, between the two, an intermediate layer of silicon oxide 4.
- the silicon is monocrystalline, polycrystalline or amorphous. It may or may not be doped.
- the upper layer of silicon 2 is structured to form the watch component therein, designated by 5.
- a deep reactive ionic etching is typically carried out preceded by a photolithography operation as described in the patent application. WO 2019/180596 .
- the intermediate layer of silicon oxide 4 serves to stop the etching.
- the lower silicon layer 3, preferably thicker than the upper silicon layer 2, for its part serves as a rigid support facilitating the etching as well as the following steps of the process.
- this second step one leaves in a recess 6 of the watch component 5 (cf.
- FIGS. 1 (b) and 2 ) a part 7 of the upper layer of silicon 2 which will be called “connecting element”, as well as a fastener or bridge of material 8 connecting this connecting element 7 to the wall, 6a, of the recess 6.
- connecting element a part 7 of the upper layer of silicon 2 which will be called “connecting element”, as well as a fastener or bridge of material 8 connecting this connecting element 7 to the wall, 6a, of the recess 6.
- sacrificial silicon parts 9 that no attachment connects to the watch component in the upper layer of silicon. 2.
- the intermediate layer of silicon oxide 4 is etched in order to remove it between the watch component 5 and the lower layer of silicon 3.
- This step can be carried out by controlled chemical attack, preferably with steam, with l using hydrofluoric acid or a mixture of hydrofluoric acid and ethanol.
- This step separates the watch component 5 from the lower silicon layer 3 and detaches the sacrificial silicon parts 9 which can thus be removed (the figure 3 shows the watch component 5 after removing the sacrificial silicon parts 9).
- the watch component 5 however remains attached to the lower layer of silicon 3 by successively the attachment 8, the connecting element 7 and a part 10 of the intermediate layer of silicon oxide 4 left between the connecting element 7 and layer 3.
- the dimensions of the connecting element 7 are chosen sufficiently large so that after the removal of the oxide under the watch component 5, the fastener 8 and the sacrificial parts 9 and until the under-etching stops, the oxide remains under the connecting element 7.
- the recess 6 of the watch component 5 in which the connecting element 7 is located is the central hole of a hub 11 formed by elastic arms allowing elastic mounting of the component on an axis, and the clip 8 connects the 'connecting element 7 to the wall 6a of this central hole.
- the recess 6 of the watch component in which the connecting element 7 is located separates a rim 12 of the component and one of the elastic arms of the hub 11, and the clip 8 connects the connecting element 7 to the surface internal 12a of the rim 12.
- the connecting element 7 can be connected to any interior surface of the watch component, such as the interior surface of a rim, a cavity, an axis hole or other assembly hole, the surface of an inner arm, the inner or outer surface of a hub, etc.
- the / each connecting element 7 could also be connected to the component by several fasteners.
- the horological component is for example a toothed wheel, as shown in figures 2 to 5 , a cam, an indicator needle or a spiral-type spring or the like.
- the outer surface of the watch component does not need to be connected by a fastener to the rest of the plate, it can be functional over its entire circumference and have a micrometric structure of the micro-tooth type or the like.
- the surface condition and appearance of the final component may be optimal since the outer surface will be free of any attachment residue.
- a fourth step of the process ( figure 1 (d) ) consists in thermally oxidizing the watch component 5.
- the wafer 1 with the watch component 5 is placed in an oven to subject it to a temperature between 800 and 1200 ° C and to an oxidizing atmosphere comprising gas oxygen or water vapor until a predetermined thickness of silicon oxide (SiO 2 ) is obtained on its surfaces.
- This silicon oxide layer, 13, is formed by consuming silicon to a depth corresponding to approximately 44% of its thickness.
- the oxidation is stopped before the growth of the silicon oxide layer 13 on the clock component 5 and on the lower silicon layer 3 causes them to touch each other.
- the watch component is then deoxidized by removing the silicon oxide layer 13, for example by controlled chemical attack, wet or with steam, using hydrofluoric acid or a mixture of hydrofluoric acid and ethanol. ( figure 1 (e) ).
- the respective sizes of the watch component 5 and of the lower silicon layer 3 are then reduced with respect to the figure 1 (c) , which increases their spacing d.
- the oxidation parameters can vary from one oxidation-deoxidation sequence to the next.
- the assembly 3, 5 can be oxidized for a longer time in the last sequences than in the first since more space is available between the clock component 5 and the lower silicon layer 3 for the growth of the silicon oxide. .
- Each oxidation step is stopped before the timepiece component 5 and the lower silicon layer 3 touch each other via the silicon oxide layer 13. In this way, the risk of the timepiece component 5 and the lower silicon layer 3 are attracted to each other and merge when removing the silicon oxide layer 13.
- these oxidation-deoxidation sequences make it possible to attenuate the surface defects of the watch component, in particular the undulations created by the deep reactive ionic etching on the sides of the watch component.
- a permanent silicon oxide layer 14 can be formed on the watch component, by thermal oxidation or deposition, to increase its mechanical strength.
- the large spacing d obtained by the oxidation-deoxidation sequences make it possible to form an oxide layer 14 of great thickness, for example approximately 3 ⁇ m or even more, while the component is still attached to the wafer 1.
- silicon-on-insulator wafers are generally obtained by growing an oxide layer on a silicon wafer and fusion welding another silicon wafer on the oxide layer. Due to the compressive stress that it generates on the first silicon wafer, the oxide layer must have a limited thickness, between 1 and 3 ⁇ m at most. We can therefore understand the advantage of being able to increase at will the distance d between the watch component 5 and the lower silicon layer 3 before the formation of the permanent silicon oxide layer 14, as the invention allows.
- the watch component 5 could receive a layer of a material having good tribological properties, for example carbon crystallized in the form of diamond (DLC) or crystals. carbon nanotubes, a layer forming an oxygen barrier or a layer, for example of parylene, used to contain debris if the component breaks.
- a material having good tribological properties for example carbon crystallized in the form of diamond (DLC) or crystals.
- the horological component 5 is typically part of a batch of identical horological components manufactured simultaneously in the wafer 1.
- the horological components are detached from the wafer 1 by breaking or elimination of the fasteners 8.
- the watch components can be turned with respect to the plate 1 by means of tweezers until the fasteners 8 are broken, or the latter are cut by laser.
- the present invention allows complete work on the watch component (s) while they are linked to the wafer. It is thus possible to achieve high and repeatable quality levels with good uniformity between the different components.
- the watch components can be integrated into timepieces such as wristwatches, pocket watches or clocks.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Micromachines (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20173465.4A EP3907565A1 (de) | 2020-05-07 | 2020-05-07 | Verfahren zur herstellung einer uhrenkomponente aus silizium |
| CH001242/2022A CH718818B1 (fr) | 2020-05-07 | 2021-05-05 | Procédé de fabrication d'un composant horloger en silicium |
| PCT/IB2021/053765 WO2021224804A1 (fr) | 2020-05-07 | 2021-05-05 | Procédé de fabrication d'un composant horloger en silicium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP20173465.4A EP3907565A1 (de) | 2020-05-07 | 2020-05-07 | Verfahren zur herstellung einer uhrenkomponente aus silizium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EP3907565A1 true EP3907565A1 (de) | 2021-11-10 |
Family
ID=70616967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP20173465.4A Withdrawn EP3907565A1 (de) | 2020-05-07 | 2020-05-07 | Verfahren zur herstellung einer uhrenkomponente aus silizium |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP3907565A1 (de) |
| CH (1) | CH718818B1 (de) |
| WO (1) | WO2021224804A1 (de) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1722281A1 (de) | 2005-05-12 | 2006-11-15 | ETA SA Manufacture Horlogère Suisse | Analoger Anzeiger aus kristallenem Material, Uhr mit solchem Anzeiger, und Herstellungsverfahren dafür |
| EP2104006A1 (de) * | 2008-03-20 | 2009-09-23 | Nivarox-FAR S.A. | Monoblock-Doppelspirale und ihr Herstellungsverfahren |
| EP2145857A1 (de) | 2008-07-10 | 2010-01-20 | The Swatch Group Research and Development Ltd. | Verfahren zur Herstellung eines mikromechanischen Bauteils |
| CH702431A2 (fr) | 2009-12-21 | 2011-06-30 | Suisse Electronique Microtech | Procédé de fabrication d'une pièce micromécanique. |
| WO2016062889A2 (fr) * | 2014-10-24 | 2016-04-28 | Richemont International Sa | Organe réglant pour un mouvement horloger mécanique |
| WO2016128694A1 (fr) * | 2015-02-13 | 2016-08-18 | Tronic's Microsystems | Oscillateur mécanique et procédé de réalisation associe |
| EP3181938A1 (de) | 2015-12-18 | 2017-06-21 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material |
| EP3425458A1 (de) * | 2017-07-07 | 2019-01-09 | ETA SA Manufacture Horlogère Suisse | Abtrennbares stück eines uhrenoszillators |
| WO2019166922A1 (fr) | 2018-03-01 | 2019-09-06 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Procede de fabrication d'un spiral |
| WO2019180596A1 (fr) | 2018-03-20 | 2019-09-26 | Patek Philippe Sa Geneve | Procede de fabrication de composants horlogers en silicium |
| WO2019180177A1 (fr) | 2018-03-21 | 2019-09-26 | Nivarox-Far S.A. | Procede de fabrication d'un spiral en silicium |
-
2020
- 2020-05-07 EP EP20173465.4A patent/EP3907565A1/de not_active Withdrawn
-
2021
- 2021-05-05 WO PCT/IB2021/053765 patent/WO2021224804A1/fr active Application Filing
- 2021-05-05 CH CH001242/2022A patent/CH718818B1/fr unknown
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1722281A1 (de) | 2005-05-12 | 2006-11-15 | ETA SA Manufacture Horlogère Suisse | Analoger Anzeiger aus kristallenem Material, Uhr mit solchem Anzeiger, und Herstellungsverfahren dafür |
| EP2104006A1 (de) * | 2008-03-20 | 2009-09-23 | Nivarox-FAR S.A. | Monoblock-Doppelspirale und ihr Herstellungsverfahren |
| EP2145857A1 (de) | 2008-07-10 | 2010-01-20 | The Swatch Group Research and Development Ltd. | Verfahren zur Herstellung eines mikromechanischen Bauteils |
| CH702431A2 (fr) | 2009-12-21 | 2011-06-30 | Suisse Electronique Microtech | Procédé de fabrication d'une pièce micromécanique. |
| WO2016062889A2 (fr) * | 2014-10-24 | 2016-04-28 | Richemont International Sa | Organe réglant pour un mouvement horloger mécanique |
| WO2016128694A1 (fr) * | 2015-02-13 | 2016-08-18 | Tronic's Microsystems | Oscillateur mécanique et procédé de réalisation associe |
| EP3181938A1 (de) | 2015-12-18 | 2017-06-21 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Herstellungsverfahren einer spiralfeder mit einer vorbestimmten steifigkeit durch wegnahme von material |
| EP3425458A1 (de) * | 2017-07-07 | 2019-01-09 | ETA SA Manufacture Horlogère Suisse | Abtrennbares stück eines uhrenoszillators |
| WO2019166922A1 (fr) | 2018-03-01 | 2019-09-06 | Csem Centre Suisse D'electronique Et De Microtechnique Sa - Recherche Et Developpement | Procede de fabrication d'un spiral |
| WO2019180596A1 (fr) | 2018-03-20 | 2019-09-26 | Patek Philippe Sa Geneve | Procede de fabrication de composants horlogers en silicium |
| WO2019180177A1 (fr) | 2018-03-21 | 2019-09-26 | Nivarox-Far S.A. | Procede de fabrication d'un spiral en silicium |
Also Published As
| Publication number | Publication date |
|---|---|
| CH718818B1 (fr) | 2023-12-29 |
| WO2021224804A1 (fr) | 2021-11-11 |
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