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EP2064301A1 - Strahlungsemittierende vorrichtung - Google Patents

Strahlungsemittierende vorrichtung

Info

Publication number
EP2064301A1
EP2064301A1 EP07785712A EP07785712A EP2064301A1 EP 2064301 A1 EP2064301 A1 EP 2064301A1 EP 07785712 A EP07785712 A EP 07785712A EP 07785712 A EP07785712 A EP 07785712A EP 2064301 A1 EP2064301 A1 EP 2064301A1
Authority
EP
European Patent Office
Prior art keywords
radiation
emitting device
radiation conversion
conversion
functional layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07785712A
Other languages
German (de)
English (en)
French (fr)
Inventor
Ute Liepold
Manfred Kobusch
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2064301A1 publication Critical patent/EP2064301A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
    • C09K11/77342Silicates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/501Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Definitions

  • the invention relates to a radiation-emitting device which emits a primary radiation and has a radiation conversion material.
  • Radiation-emitting devices comprise two contacts, for example electrodes which make contact with electrically conductive light-emitting functional layers. Electrons are injected from the cathode and positive charges (so-called holes) from the anode are injected into the emission layer. The recombination of these charges in the emission layer generates light. Depending on the semiconducting material used for the emission layer, the emitted light has different wavelengths. In order to produce visible or differently colored light, the primary radiation of the semiconductor layer can be at least partially converted into a secondary radiation. This is often done by so-called conversion phosphors, which are excited by the primary radiation and emit secondary radiation at a different wavelength. There are organic and inorganic conversion phosphors, wherein the inorganic conversion phosphors have a higher temperature and radiation stability. However, there are only a limited number of suitable inorganic
  • Conversion phosphors that meet the requirements for excitation range and emission range.
  • the object of the invention is to provide new conversion phosphors in radiation-emitting devices.
  • a radiation-emitting device In a radiation-emitting device according to an embodiment of the invention, new radiation conversion phosphors of the general formula Ca 3- X- 7 Eu x Me 7 SiO 4 Cl 2 are used, which at least partially convert the primary radiation into secondary radiation.
  • a radiation-emitting device comprises a radiation-emitting functional layer which emits a primary radiation, and a
  • Radiation conversion material which is arranged in the beam path of the radiation-emitting functional layer and comprises a radiation conversion luminescent substance of the general formula Ca 3-x- yEu x Me y SiO 4 Cl 2.
  • Radiation conversion luminescent material converts at least a part of the primary radiation of the radiation-emitting functional layer into a secondary radiation.
  • the used radiation conversion luminescent material is characterized by a simple production. It has a good absorption capacity in the UV and blue spectral range and is therefore particularly suitable for use in radiation-emitting devices.
  • the radiation conversion phosphor is a luminescence conversion phosphor.
  • the radiation-emitting device is advantageously a device whose radiation-emitting functional layer emits primary radiation in the UV range, preferably at wavelengths between 360 and 400 nm. It can also be a device whose radiation-emitting functional layer emits in the blue region, preferably at wavelengths between 400 and 470 nm.
  • Materials of such radiation-emitting functional layers may be organic (OLED) or inorganic.
  • the material of the radiation-emitting functional layers comprises semiconductors.
  • inorganic-based semiconductor materials are selected from a group comprising InGaN, Ga (In, Al) N, and GaN. Since the emitted radiation of these radiation-emitting functional layers is limited to a specific wavelength range, this range is to be expanded by the use of the conversion luminescent substances.
  • the radiation conversion phosphor used in the radiation-emitting devices can be excited in the UV and in the blue wavelength range of the radiation emitted by the device.
  • the radiation conversion luminescent material has an emission maximum at wavelengths between 470 nm and 550 nm, with a half-value width of the emission band of approximately 60 nm.
  • the radiation conversion luminescent material has an emission maximum at 512 t 3 nm converted to a longer wavelength secondary radiation that is visible.
  • mixtures of the primary and secondary radiation are also possible, which in their entirety determine the color impression and the color location of the radiation of the radiation-emitting device.
  • the radiation conversion phosphor can be excited at wavelengths of 360 to 470 nm.
  • the conversion phosphor can convert blue light into different-colored light or UV radiation into visible light.
  • the radiation-emitting device may include a radiation conversion phosphor having the general formula Ca 3 - having x- x yEu MeYSiO 4 Cl 2, wherein the parameter x is selected from the range 0.05 to 0.5.
  • the Ca may also be partially substituted by other metals Me selected from a group containing the metals Sr, Ba and Mg.
  • the range for the parameter y is then conveniently selected between 0 and 0.5.
  • Such a partial substitution has the advantage that it allows the emission maximum of the radiation conversion phosphor to be shifted to other wavelengths.
  • the radiation-emitting device may further comprise a radiation conversion phosphor having the formula Ca 2.9 Eu 0.1 SiO 4 Cl 2 .
  • This radiation conversion phosphor has an emission maximum at 512 nm.
  • Another embodiment of the radiation-emitting device may contain a radiation conversion luminescent which has the formula Ca 2 . 6 25Eu 0 .05 5 Mg 0 .32SiO 4 Cl 2 .
  • This radiation conversion phosphor has an emission maximum shifted by 3 nm to short wavelength compared to the above-mentioned radiation conversion phosphor.
  • the advantage of the radiation conversion phosphors according to the invention compared to the conventional radiation conversion luminescent material (Ca, Eu) 8 Mg (Si0 4 ) 4 Cl 2 is that the reaction of the starting materials during the synthesis of the invention
  • the radiation conversion material covers the radiation-emitting functional layer on one or more sides.
  • the radiation conversion material may be referred to as
  • Radiation conversion body be formed, which is transparent to the radiation matrix material, for.
  • a resin such as epoxy, silicone or glasses, in which the radiation conversion phosphor is incorporated.
  • the layer thickness and the degree of filling of the radiation conversion body can be varied.
  • the concentration of the radiation conversion luminescent material in the matrix material can be varied.
  • the mixing ratio of primary and secondary radiation can thus also be influenced by the concentration of the radiation conversion luminescent substance in the matrix.
  • the radiation conversion body may constitute a potting of the radiation-emitting device.
  • the advantage of a radiation conversion body surrounding the radiation-emitting functional layer on several sides is that large-area impingement of the primary radiation on the radiation conversion luminescent material and thereby an increase in the conversion rate are achieved.
  • the radiation-emitting device may contain a radiation conversion luminescent material, which may be e.g. B. is present in a sufficiently high concentration in a matrix to completely convert the primary radiation into secondary radiation. Thus, the entire primary radiation is converted into a longer-wave light, the secondary radiation.
  • the radiation-emitting device may also include a radiation conversion phosphor that only partially converts the primary radiation into secondary radiation. This results in a mixture of primary and secondary radiation.
  • the advantage here is that mixed colors can be produced with it.
  • the radiation-emitting device may further include a radiation conversion material comprising additional phosphors. The advantage of this is that more color mixtures or even white light can be generated.
  • Chlorosilicates as disclosed, for example, in DE 10036940 and the prior art described therein,
  • Nitrides, sions and sialons as disclosed, for example, in DE 10147040 and the prior art described therein, and
  • An embodiment of the invention further relates to a method for producing a radiation-emitting device according to the embodiments described above.
  • the method steps include A) providing a radiation-emitting functional layer and B) arranging the radiation conversion material in the beam path of the radiation-emitting functional layer.
  • a radiation conversion body containing the radiation conversion material with the radiation conversion luminophore can be produced above the radiation-emitting functional layer.
  • Radiation conversion body may surround the radiation-emitting functional layer on one or more sides.
  • the advantage here is that the radiation-emitting device and, in particular, its light exit surface is covered as extensively as possible by the radiation conversion body containing the radiation conversion luminescent material.
  • Radiation conversion body can form, for example, a potting for the radiation-emitting device.
  • additional phosphors can be introduced into the radiation conversion material. Furthermore, it is also possible to use a matrix in the production of the radiation conversion body, into which the radiation conversion material with the
  • Radiation conversion phosphor is embedded. If the radiation conversion body is formed as a layer, this can amount to a thickness of 5 ⁇ m to a few centimeters. If the radiation conversion material without matrix is produced as a layer over the radiation-emitting functional layer, the thickness of this layer can be 50 nm to 20 ⁇ m.
  • the radiation conversion luminescent material in process step B) can be obtained by homogeneously mixing calcium carbonate, calcium chloride, europium oxide, silicon dioxide and optionally an additional component selected from strontium carbonate, barium carbonate and magnesium oxide in the stoichiometric ratio corresponding to the composition
  • the radiation conversion body can be prepared by dispersing the radiation conversion luminescent material into a matrix, for example epoxide, glasses or silicone become. Due to the proportion of the conversion luminescent material in relation to the matrix, the degree of filling, the ratio of primary / secondary radiation can be varied. By using a suitable matrix material, it is possible to produce a radiation conversion body which firmly adheres to a carrier surface, for example to the surface of the radiation-emitting functional layer. When producing a paste from the
  • Radiation conversion luminescent this can be brought in an advantageous embodiment in any favorable for the conversion form and then cured.
  • the paste can be applied to the radiation-emitting functional layer by various methods.
  • FIG. 1 shows the structure of a radiation-emitting device with a radiation conversion body in cross-section.
  • FIG. 2 shows a further embodiment of the structure of a radiation-emitting device shown in FIG.
  • FIG. 3 shows the structure of a radiation-emitting device with a radiation conversion body in cross section according to a further embodiment.
  • FIG. 4 shows an emission spectrum of a radiation conversion luminescent material according to an embodiment of the invention.
  • FIG. 1 shows the cross-section of an embodiment of the radiation-emitting device 1 according to the invention.
  • a radiation-emitting functional layer 2 which is electrically located in a housing 6, is located is conductively contacted by two contacts 21 via a bonding wire 22.
  • the radiation-emitting functional layer 2 emits primary radiation 4.
  • the radiation-emitting functional layer is the
  • Radiation conversion body 3 which is composed of a matrix 32 and the radiation conversion phosphor 31.
  • the radiation conversion body 3 emits the secondary radiation 5 after excitation by the primary radiation 4.
  • a radiation-emitting device may be, for example, a luminescence conversion LED.
  • the side walls of the housing 6 may also be inclined, and for example have a reflective coating that can reflect the primary radiation emitted by the radiation-emitting functional layer 2 and also the secondary radiation.
  • the radiation-emitting functional layer 2 emits a primary radiation 4 which lies in the UV range (preferably at wavelengths of 360 to 400 nm) or in the blue range (preferably at wavelengths from 400 to 470 nm).
  • the material of the radiation-emitting functional layer comprises semiconductor materials, for example InGaN, Ga (In, Al) N or GaN.
  • the radiation conversion phosphor 31 contained in the radiation conversion body 3 is excitable in the blue and UV range, preferably in a range of 360 to 470 nm, and comprises a conversion phosphor of the general formula Ca 3 - X - y Eu x Me y S1O 4 Cl 2 • Its emission maximum is at wavelengths greater than 470 nm, preferably in the range of 470 nm to 550 nm, ie the radiation conversion luminescent material can convert the primary radiation 4 into a longer wavelength secondary radiation 5.
  • the radiation conversion phosphor 31 has the general formula Ca 3-X-7 Eu x Me 7 SiO 4 Cl 2 , where x is selected from the range 0.05 to 0.5. Preferably, x is in the range 0.1 to 0.3. If Ca is replaced by a metal Me (eg Ba, Sr or Mg or any combinations of these metals) partially substituted, y is selected from the range 0 to 0.5. Depending on the degree of substitution, the emission maximum of the radiation conversion luminescent material 31 shifts.
  • the radiation conversion luminescent substance 31 may have the formula Ca 2 .9Eu 0- ISiO 4 Cl 2 . This embodiment has an emission maximum at 512 nm.
  • another radiation conversion phosphor 31 has the formula Ca 2 .625Eu 0 .055Mg 0 .32SiO 4 Cl 2 and one compared to the phosphor Ca 2 .9Eu 0 .1SiO 4 Cl 2 by 3 nm shifted emission maximum at 509 nm.
  • the radiation conversion body 3 can convert the primary radiation 4 completely or only partially into secondary radiation 5. How much primary radiation 4 is converted can be controlled inter alia by the concentration of the radiation conversion substance 31 in the matrix 32.
  • the matrix can be, for example, a silicone, glass or an epoxide, into which the pulverulent radiation conversion luminescent material is mixed as required. The higher its concentration, the more primary radiation 4 is converted and the more the color impression shifts in the direction of the secondary radiation 5.
  • the radiation conversion body 3 may also consist of 100% of the radiation conversion luminescent substance 31.
  • Radiation conversion luminescent material applied in a relatively thin (50 nm to 20 microns) layer on the radiation-emitting functional layer.
  • FIG. 5 An embodiment of the invention in which the radiation conversion body 3 only partially converts the primary radiation 4 into secondary radiation 5 is depicted in FIG. Again, a cross-section of the embodiment of a radiation-emitting device is shown again.
  • the radiation of Radiation-emitting device is a mixture of primary 4 and secondary radiation 5.
  • FIG. 3 shows, analogously to FIG. 1, the cross section of an embodiment of the radiation-emitting device 1 according to the invention.
  • the radiation conversion body 3 comprising a matrix 32 and the radiation conversion luminescent material 31 is applied to the radiation-emitting functional layer 2 in the form of a relatively thin layer.
  • the radiation conversion body 3 does not necessarily have to be in contact with the radiation-emitting functional layer 2 (not shown here), but further layers may be present between the radiation-emitting functional layer 2 and the radiation conversion body 3.
  • FIG. 4 shows an emission spectrum 36 of the radiation conversion luminescent substance 31 of the formula Ca 2 . 9 EU 0.1 SiO 4 Cl 2 . It is the relative emission intensity I r plotted against the wavelength ⁇ in nm.
  • the emission spectrum of the radiation conversion luminescent material according to the invention is compared with the emission spectrum 35 of another conversion luminescent material of the general formula (Ca, Eu) 8 Mg (SiO 4 ) 4 Cl 2 .
  • the two phosphors differ in the position of the emission maximum by 3 nm, also shows a difference in the half-width of the spectra. Both phosphors have very similar emission spectra and are therefore identical
  • the advantage of the radiation conversion luminescent material according to the invention consists in its simple production in comparison to conventional conversion luminescent materials.
  • the radiation-emitting device may be provided by providing a radiation-emitting functional layer 2 and by arranging the radiation conversion material in the beam path of the radiation-emitting functional layer.
  • the radiation conversion material z. B. in the form of a radiation conversion body 3, for example, a thin layer or a potting, are generated on the radiation-emitting functional layer 2 containing the radiation conversion luminescent material.
  • This mixture is then in the Formiergasström at 600 0 C to 1000 0 C, preferably at 65O 0 C to 800 0 C annealed.
  • a matrix for example silicone, glasses or epoxide
  • FIGS. 1 to 4 can also be varied as desired. It should also be noted that the invention is not limited to these examples, but allows other, not listed here embodiments.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Luminescent Compositions (AREA)
EP07785712A 2006-09-27 2007-08-22 Strahlungsemittierende vorrichtung Withdrawn EP2064301A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006045705 2006-09-27
DE102007020782A DE102007020782A1 (de) 2006-09-27 2007-05-03 Strahlungsemittierende Vorrichtung
PCT/DE2007/001485 WO2008040270A1 (de) 2006-09-27 2007-08-22 Strahlungsemittierende vorrichtung

Publications (1)

Publication Number Publication Date
EP2064301A1 true EP2064301A1 (de) 2009-06-03

Family

ID=39134596

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07785712A Withdrawn EP2064301A1 (de) 2006-09-27 2007-08-22 Strahlungsemittierende vorrichtung

Country Status (8)

Country Link
US (1) US8115223B2 (zh)
EP (1) EP2064301A1 (zh)
JP (1) JP2010505243A (zh)
KR (1) KR101460377B1 (zh)
CN (1) CN101517035B (zh)
DE (1) DE102007020782A1 (zh)
TW (1) TWI362763B (zh)
WO (1) WO2008040270A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010506006A (ja) 2006-10-03 2010-02-25 ライトスケイプ マテリアルズ,インク. 金属ケイ酸塩ハロゲン化物燐光体及びそれを使用するled照明デバイス
JP5682104B2 (ja) * 2008-09-05 2015-03-11 三菱化学株式会社 蛍光体及びその製造方法と、その蛍光体を用いた蛍光体含有組成物及び発光装置、並びに、その発光装置を用いた画像表示装置及び照明装置
WO2011092646A2 (en) 2010-01-28 2011-08-04 Yissum Research Development Company Of The Hebrew University Of Jerusalem Ltd. Lighting devices with prescribed colour emission
DE102010031237A1 (de) 2010-07-12 2012-01-12 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
US20170342363A1 (en) * 2014-10-29 2017-11-30 Corning Incorporated Devices and methods for generation and culture of 3d cell aggregates
CN106190115A (zh) * 2016-07-15 2016-12-07 福州大学 一种发光颜色可调的荧光粉及其制备方法
CN106398688B (zh) * 2016-09-05 2018-10-09 中山大学 一种应用于新生儿黄疸病治疗led器件中的蓝光荧光粉及其合成方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100315106B1 (ko) * 1994-07-26 2002-02-19 김순택 표시소자
DE19638667C2 (de) 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
JP3094961B2 (ja) * 1997-07-31 2000-10-03 日本電気株式会社 液晶表示素子
US6294800B1 (en) * 1998-02-06 2001-09-25 General Electric Company Phosphors for white light generation from UV emitting diodes
US6252254B1 (en) 1998-02-06 2001-06-26 General Electric Company Light emitting device with phosphor composition
EP1206802B1 (de) * 2000-05-29 2008-03-19 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Weiss emittierende beleuchtungseinheit auf led-basis
DE10026435A1 (de) 2000-05-29 2002-04-18 Osram Opto Semiconductors Gmbh Kalzium-Magnesium-Chlorosilikat-Leuchtstoff und seine Anwendung bei Lumineszenz-Konversions-LED
DE10036940A1 (de) 2000-07-28 2002-02-07 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Lumineszenz-Konversions-LED
AT410266B (de) 2000-12-28 2003-03-25 Tridonic Optoelectronics Gmbh Lichtquelle mit einem lichtemittierenden element
US6616862B2 (en) 2001-05-21 2003-09-09 General Electric Company Yellow light-emitting halophosphate phosphors and light sources incorporating the same
DE10147040A1 (de) 2001-09-25 2003-04-24 Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh Beleuchtungseinheit mit mindestens einer LED als Lichtquelle
JP3993854B2 (ja) * 2001-10-01 2007-10-17 松下電器産業株式会社 半導体発光素子とこれを用いた発光装置
US6862491B2 (en) * 2002-05-22 2005-03-01 Applied Materials Israel, Ltd. System and method for process variation monitor
US20050218780A1 (en) * 2002-09-09 2005-10-06 Hsing Chen Method for manufacturing a triple wavelengths white LED
JP4263453B2 (ja) 2002-09-25 2009-05-13 パナソニック株式会社 無機酸化物及びこれを用いた発光装置
DE10259946A1 (de) * 2002-12-20 2004-07-15 Tews, Walter, Dipl.-Chem. Dr.rer.nat.habil. Leuchtstoffe zur Konversion der ultravioletten oder blauen Emission eines lichtemittierenden Elementes in sichtbare weiße Strahlung mit sehr hoher Farbwiedergabe
DE10319091A1 (de) 2003-04-28 2004-09-09 Siemens Ag Leuchtstoff zum Umwandeln einer Primärstrahlung in eine Sekundärstrahlung
JP2006005336A (ja) * 2004-05-18 2006-01-05 Showa Denko Kk 発光ダイオードおよびその製造方法
WO2006011734A1 (en) * 2004-07-24 2006-02-02 Young Rak Do Led device comprising thin-film phosphor having two dimensional nano periodic structures
JP4613546B2 (ja) * 2004-08-04 2011-01-19 日亜化学工業株式会社 発光装置
JP4729278B2 (ja) * 2004-08-30 2011-07-20 Dowaエレクトロニクス株式会社 蛍光体及び発光装置
JP4524607B2 (ja) * 2004-10-26 2010-08-18 豊田合成株式会社 改善されたシリケート系蛍光体及びそれを用いたledランプ
US7671529B2 (en) * 2004-12-10 2010-03-02 Philips Lumileds Lighting Company, Llc Phosphor converted light emitting device
JP2007217605A (ja) * 2006-02-17 2007-08-30 Matsushita Electric Works Ltd 蛍光体及びその製造方法、発光装置
JP2010506006A (ja) * 2006-10-03 2010-02-25 ライトスケイプ マテリアルズ,インク. 金属ケイ酸塩ハロゲン化物燐光体及びそれを使用するled照明デバイス

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008040270A1 *

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KR101460377B1 (ko) 2014-11-10
TWI362763B (en) 2012-04-21
DE102007020782A1 (de) 2008-04-03
JP2010505243A (ja) 2010-02-18
CN101517035B (zh) 2013-01-30
TW200816528A (en) 2008-04-01
KR20090075696A (ko) 2009-07-08
CN101517035A (zh) 2009-08-26
WO2008040270A1 (de) 2008-04-10
US20100006879A1 (en) 2010-01-14
US8115223B2 (en) 2012-02-14

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