[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

EP1741802A4 - Film-forming apparatus and film-forming method - Google Patents

Film-forming apparatus and film-forming method

Info

Publication number
EP1741802A4
EP1741802A4 EP05727877A EP05727877A EP1741802A4 EP 1741802 A4 EP1741802 A4 EP 1741802A4 EP 05727877 A EP05727877 A EP 05727877A EP 05727877 A EP05727877 A EP 05727877A EP 1741802 A4 EP1741802 A4 EP 1741802A4
Authority
EP
European Patent Office
Prior art keywords
film
forming
forming apparatus
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05727877A
Other languages
German (de)
French (fr)
Other versions
EP1741802B1 (en
EP1741802A1 (en
Inventor
Tadahiro Ohmi
Takaaki Matsuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=35056224&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EP1741802(A4) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of EP1741802A1 publication Critical patent/EP1741802A1/en
Publication of EP1741802A4 publication Critical patent/EP1741802A4/en
Application granted granted Critical
Publication of EP1741802B1 publication Critical patent/EP1741802B1/en
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228—Gas flow assisted PVD deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F13/06—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media
    • F28F13/08—Arrangements for modifying heat-transfer, e.g. increasing, decreasing by affecting the pattern of flow of the heat-exchange media by varying the cross-section of the flow channels
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F9/00—Casings; Header boxes; Auxiliary supports for elements; Auxiliary members within casings
    • F28F9/02—Header boxes; End plates
    • F28F9/026—Header boxes; End plates with static flow control means, e.g. with means for uniformly distributing heat exchange media into conduits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
EP05727877.2A 2004-03-29 2005-03-29 Film-forming apparatus and film-forming method Not-in-force EP1741802B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004097112 2004-03-29
PCT/JP2005/005928 WO2005093120A1 (en) 2004-03-29 2005-03-29 Film-forming apparatus and film-forming method

Publications (3)

Publication Number Publication Date
EP1741802A1 EP1741802A1 (en) 2007-01-10
EP1741802A4 true EP1741802A4 (en) 2009-08-19
EP1741802B1 EP1741802B1 (en) 2013-08-21

Family

ID=35056224

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05727877.2A Not-in-force EP1741802B1 (en) 2004-03-29 2005-03-29 Film-forming apparatus and film-forming method

Country Status (7)

Country Link
US (1) US20080241587A1 (en)
EP (1) EP1741802B1 (en)
JP (1) JP5191656B2 (en)
KR (1) KR100830388B1 (en)
CN (1) CN1938447B (en)
TW (1) TWI371501B (en)
WO (1) WO2005093120A1 (en)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1862788A1 (en) * 2006-06-03 2007-12-05 Applied Materials GmbH & Co. KG Evaporator for organic material, coating installation, and method for use thereof
KR101128745B1 (en) * 2007-09-10 2012-03-27 가부시키가이샤 알박 Vapor emission device, organic thin-film vapor deposition apparatus and method of organic thin-film vapor deposition
US10434804B2 (en) 2008-06-13 2019-10-08 Kateeva, Inc. Low particle gas enclosure systems and methods
US12064979B2 (en) 2008-06-13 2024-08-20 Kateeva, Inc. Low-particle gas enclosure systems and methods
US8899171B2 (en) 2008-06-13 2014-12-02 Kateeva, Inc. Gas enclosure assembly and system
US10442226B2 (en) 2008-06-13 2019-10-15 Kateeva, Inc. Gas enclosure assembly and system
US11975546B2 (en) 2008-06-13 2024-05-07 Kateeva, Inc. Gas enclosure assembly and system
US9604245B2 (en) 2008-06-13 2017-03-28 Kateeva, Inc. Gas enclosure systems and methods utilizing an auxiliary enclosure
US8383202B2 (en) 2008-06-13 2013-02-26 Kateeva, Inc. Method and apparatus for load-locked printing
US9048344B2 (en) 2008-06-13 2015-06-02 Kateeva, Inc. Gas enclosure assembly and system
US12018857B2 (en) 2008-06-13 2024-06-25 Kateeva, Inc. Gas enclosure assembly and system
JP5171964B2 (en) * 2008-11-14 2013-03-27 株式会社アルバック Organic thin film deposition apparatus, organic EL element manufacturing apparatus, and organic thin film deposition method
JP5696530B2 (en) * 2010-05-01 2015-04-08 東京エレクトロン株式会社 Thin film forming method and film forming apparatus
JP5792438B2 (en) * 2010-08-12 2015-10-14 東京エレクトロン株式会社 Film forming apparatus and film forming method
CN106113943B (en) 2011-08-09 2018-03-30 科迪华公司 Printing device downwards and method
US9120344B2 (en) 2011-08-09 2015-09-01 Kateeva, Inc. Apparatus and method for control of print gap
JP5994080B2 (en) * 2012-04-13 2016-09-21 株式会社Ｊｏｌｅｄ Vacuum device, organic film forming method, organic EL element manufacturing method, organic EL display panel, organic EL display device, organic EL light emitting device, and method for selecting material constituting getter material
WO2014045904A1 (en) * 2012-09-21 2014-03-27 コニカミノルタ株式会社 Method for manufacturing glass product
CN105900258A (en) 2013-12-26 2016-08-24 科迪华公司 Thermal treatment of electronic devices
US9343678B2 (en) 2014-01-21 2016-05-17 Kateeva, Inc. Apparatus and techniques for electronic device encapsulation
KR102669753B1 (en) 2014-01-21 2024-05-28 카티바, 인크. Apparatus and techniques for electronic device encapsulation
KR101963489B1 (en) 2014-04-30 2019-07-31 카티바, 인크. Gas cushion apparatus and techniques for substrate coating
US10569291B2 (en) * 2014-05-23 2020-02-25 Shincron Co., Ltd. Film formation method and film formation apparatus for thin film
CN104313542B (en) * 2014-10-24 2016-09-28 京东方科技集团股份有限公司 ITO layer and the manufacture method of ITO pattern, display base plate and display device
WO2016086192A1 (en) 2014-11-26 2016-06-02 Kateeva, Inc. Environmentally controlled coating systems
DE102015107297A1 (en) * 2015-05-11 2016-11-17 Von Ardenne Gmbh processing arrangement
WO2017081924A1 (en) * 2015-11-10 2017-05-18 東京エレクトロン株式会社 Vaporizer, film forming apparatus, and temperature control method
CN105316626A (en) * 2015-11-20 2016-02-10 苏州赛森电子科技有限公司 Coating film raw material guiding device of evaporation table for semiconductor processing
US20180369861A1 (en) * 2015-12-24 2018-12-27 Flosfia Inc. Film forming method
KR102369676B1 (en) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
CN110047774B (en) * 2018-01-17 2021-08-27 杭州纤纳光电科技有限公司 Equipment for preparing perovskite thin film in immersion mode, use method and application
WO2023122250A2 (en) * 2021-12-22 2023-06-29 University Of Maryland, College Park Vapor deposition systems and methods, and nanomaterials formed by vapor deposition

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003020999A1 (en) * 2001-09-04 2003-03-13 The Trustees Of Princeton University Process and apparatus for organic vapor jet deposition
WO2003080893A1 (en) * 2002-03-22 2003-10-02 Aixtron Ag Method for coating a substrate and device for carrying out the method
JP2004010990A (en) * 2002-06-10 2004-01-15 Sony Corp Thin-film forming apparatus

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3640689A (en) * 1970-03-04 1972-02-08 Fansteel Inc Composite hard metal product
JP2811004B2 (en) * 1988-05-23 1998-10-15 日本電信電話株式会社 Metal thin film growth method and apparatus
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
JPH0780718B2 (en) * 1989-08-04 1995-08-30 トヨタ自動車株式会社 Diamond synthesizing method and synthesizing apparatus
US5054420A (en) * 1989-09-29 1991-10-08 Alcan International Limited Use of a particulate packed bed at the inlet of a vertical tube MOCVD reactor to achieve desired gas flow characteristics
US5160544A (en) * 1990-03-20 1992-11-03 Diamonex Incorporated Hot filament chemical vapor deposition reactor
US5071678A (en) * 1990-10-09 1991-12-10 United Technologies Corporation Process for applying gas phase diffusion aluminide coatings
JPH0811718B2 (en) * 1992-02-27 1996-02-07 大同ほくさん株式会社 Gas source molecular beam epitaxy system
JP3404109B2 (en) * 1994-02-24 2003-05-06 第一製薬株式会社 Manufacturing method of plastic syringe preparation filled with chemical solution
JP3501524B2 (en) * 1994-07-01 2004-03-02 東京エレクトロン株式会社 Vacuum exhaust system for processing equipment
US5925189A (en) * 1995-12-06 1999-07-20 Applied Materials, Inc. Liquid phosphorous precursor delivery apparatus
JPH09279346A (en) * 1996-04-17 1997-10-28 Central Glass Co Ltd Vaporizing method of powder and its device
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
JP3788835B2 (en) * 1996-12-06 2006-06-21 株式会社アルバック Organic thin film manufacturing method
JPH11189862A (en) 1997-12-26 1999-07-13 Nippon Paint Co Ltd Production of organic colored thin film
JP3643474B2 (en) * 1998-01-30 2005-04-27 株式会社東芝 Semiconductor processing system and method of using semiconductor processing system
JP2000104172A (en) * 1998-07-28 2000-04-11 Toshiba Corp Coating film forming method, coating film forming apparatus and solid raw material
US6202591B1 (en) * 1998-11-12 2001-03-20 Flex Products, Inc. Linear aperture deposition apparatus and coating process
JP4469430B2 (en) * 1998-11-30 2010-05-26 株式会社アルバック Vapor deposition equipment
JP3682465B2 (en) * 1999-03-31 2005-08-10 独立行政法人産業技術総合研究所 Resin molded product surface layer modification method and apparatus therefor, and resin molded product with modified surface layer, resin molded product surface layer colored method and apparatus and surface molded resin product with colored surface layer, and Resin molded product with added functionality by modifying the surface layer
IL134891A0 (en) * 2000-03-06 2001-05-20 Yeda Res & Dev Reactors for production of tungsten disulfide hollow onion-like nanoparticles
US6863019B2 (en) * 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP2002194548A (en) * 2000-12-28 2002-07-10 Toshiba Corp Gas feeding method
JP4906018B2 (en) * 2001-03-12 2012-03-28 株式会社半導体エネルギー研究所 Film forming method, light emitting device manufacturing method, and film forming apparatus
JP4335469B2 (en) * 2001-03-22 2009-09-30 株式会社荏原製作所 Method and apparatus for adjusting gas circulation rate of vacuum exhaust device
JP2003068713A (en) * 2001-08-24 2003-03-07 Matsushita Electric Ind Co Ltd Plasma treatment apparatus
JP4294305B2 (en) * 2001-12-12 2009-07-08 株式会社半導体エネルギー研究所 Film forming apparatus and film forming method
SG149680A1 (en) * 2001-12-12 2009-02-27 Semiconductor Energy Lab Film formation apparatus and film formation method and cleaning method
KR100447248B1 (en) * 2002-01-22 2004-09-07 주성엔지니어링(주) Gas diffusion plate for use in ICP etcher
JP3754380B2 (en) * 2002-02-06 2006-03-08 株式会社エイコー・エンジニアリング Molecular beam source cell for thin film deposition and thin film deposition method
JP2004010989A (en) * 2002-06-10 2004-01-15 Sony Corp Thin-film forming apparatus
JP4120285B2 (en) * 2002-06-13 2008-07-16 東京エレクトロン株式会社 Introducing port mechanism of object to be processed and processing system using the same
JP4239520B2 (en) * 2002-08-21 2009-03-18 ソニー株式会社 Film forming apparatus, method for manufacturing the same, and injector
JP5107500B2 (en) 2003-08-20 2012-12-26 公益財団法人国際科学振興財団 Vapor deposition equipment
US7132128B2 (en) * 2005-03-31 2006-11-07 Tokyo Electron Limited Method and system for depositing material on a substrate using a solid precursor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003020999A1 (en) * 2001-09-04 2003-03-13 The Trustees Of Princeton University Process and apparatus for organic vapor jet deposition
WO2003080893A1 (en) * 2002-03-22 2003-10-02 Aixtron Ag Method for coating a substrate and device for carrying out the method
JP2004010990A (en) * 2002-06-10 2004-01-15 Sony Corp Thin-film forming apparatus

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
BALDO M A ET AL: "LOW PRESSURE ORGANIC VAPOR PHASE DEPOSITION OF SMALL MOLECULAR WEIGHT ORGANIC DEVICE STRUCTURES", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, vol. 488, 1 December 1997 (1997-12-01), pages 587 - 592, XP001030436, ISSN: 0272-9172 *
See also references of WO2005093120A1 *

Also Published As

Publication number Publication date
KR100830388B1 (en) 2008-05-20
CN1938447B (en) 2010-06-09
JPWO2005093120A1 (en) 2008-02-14
EP1741802B1 (en) 2013-08-21
TWI371501B (en) 2012-09-01
KR20070000500A (en) 2007-01-02
US20080241587A1 (en) 2008-10-02
EP1741802A1 (en) 2007-01-10
JP5191656B2 (en) 2013-05-08
CN1938447A (en) 2007-03-28
WO2005093120A1 (en) 2005-10-06
TW200535270A (en) 2005-11-01

Similar Documents

Publication Publication Date Title
TWI371784B (en) Film-forming apparatus and film-forming method
EP1741802A4 (en) Film-forming apparatus and film-forming method
GB0417328D0 (en) Apparatus and method
GB0425008D0 (en) Method and apparatus
GB0406336D0 (en) Apparatus and method
EP1975979A4 (en) Coating apparatus and coating method
EP1778327A4 (en) Autotitrating method and apparatus
EP1672093A4 (en) Film-forming apparatus and film-forming method
HK1111856A1 (en) Lightning apparatus and method
GB2412393B (en) Apparatus and method
GB0507538D0 (en) Apparatus and method
GB0419915D0 (en) Apparatus and method
GB0409691D0 (en) Apparatus and method
EP2053642A4 (en) Film-forming method and film-forming apparatus
TWI350207B (en) Coating device and coating method
GB0416471D0 (en) Apparatus and method
EP2053643A4 (en) Film-forming method and film-forming apparatus
EP1925689A4 (en) Protective film-forming method and protective film-forming apparatus
GB0502965D0 (en) Apparatus and method
GB0504159D0 (en) Apparatus and method
GB2414492B (en) Apparatus and method
TWI368184B (en) Drawing apparatus and drawing method
GB0617518D0 (en) Apparatus and method
GB0420071D0 (en) Apparatus and method
EP1804703A4 (en) Cryo-surgical apparatus and methods

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20061016

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB IT

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE FR GB IT

A4 Supplementary search report drawn up and despatched

Effective date: 20090717

17Q First examination report despatched

Effective date: 20100329

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): DE FR GB IT

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602005040952

Country of ref document: DE

Effective date: 20131010

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20130821

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20140522

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602005040952

Country of ref document: DE

Effective date: 20140522

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20140329

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

Effective date: 20141128

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140331

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20140329

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20180313

Year of fee payment: 14

REG Reference to a national code

Ref country code: DE

Ref legal event code: R119

Ref document number: 602005040952

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20191001