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EP1215723B1 - Process for producing epoxy resin composition for photosemiconductor element encapsulation - Google Patents

Process for producing epoxy resin composition for photosemiconductor element encapsulation Download PDF

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Publication number
EP1215723B1
EP1215723B1 EP01130096A EP01130096A EP1215723B1 EP 1215723 B1 EP1215723 B1 EP 1215723B1 EP 01130096 A EP01130096 A EP 01130096A EP 01130096 A EP01130096 A EP 01130096A EP 1215723 B1 EP1215723 B1 EP 1215723B1
Authority
EP
European Patent Office
Prior art keywords
epoxy resin
resin composition
photosemiconductor element
element encapsulation
molten mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP01130096A
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German (de)
French (fr)
Other versions
EP1215723A1 (en
Inventor
Katsumi Nitto Denko Corporation Shimada
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Nitto Denko Corp
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Nitto Denko Corp
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Publication date
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Publication of EP1215723A1 publication Critical patent/EP1215723A1/en
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Publication of EP1215723B1 publication Critical patent/EP1215723B1/en
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the present invention relates to a process for producing an epoxy resin composition for use in the encapsulation of photosemiconductor elements.
  • Epoxy resin compositions have conventionally been used extensively as resin compositions for use in the encapsulation of photosemiconductor elements such as LEDs (light-emitting diodes).
  • Such an epoxy resin composition for photosemiconductor element encapsulation usually comprises an epoxy resin, a hardener, and a hardening accelerator. This composition is generally used in the following manner. These ingredients are melt-mixed beforehand to obtain semi-cured (B-stage) tablets. In molding, e.g., transfer molding, the tablets are thermally melted, charged into a mold in which a photosemiconductor element is disposed, and then cured to thereby encapsulate the photosemiconductor element.
  • epoxy resin compositions for photosemiconductor element encapsulation are required to give transparent cured resins because it is necessary to secure satisfactory luminescence of encapsulated photosemiconductor elements. It is therefore undesirable to incorporate a filler or the like so as to increase viscosity.
  • EP-A-1090942 relates to a process for producing an epoxy resin composition
  • an epoxy resin composition comprising an epoxy resin, an acid anhydride-based curing agent and a hardening accelerator.
  • the ingredients are melt-mixed together; in a second step, the fluidity of the resin composition is adjusted by adding an organic solvent.
  • EP-A-1004630 relates to a process for producing an epoxy resin composition comprising an epoxy resin, a phenolic resin and a hardening accelerator.
  • the ingredients are melt-mixed together; in a second step, a satisfactory flowability can be obtained by using one or more inorganic fillers.
  • the object of the invention is to provide a process for producing an epoxy resin composition for photosemiconductor element encapsulation which, even when a filler or the like is not contained therein, can have a viscosity necessary for molding and hence be satisfactorily molded to give a cured resin less apt to have defects such as burrs or bubbles.
  • the invention provides a process for producing an epoxy resin composition for photosemiconductor element encapsulation comprising an epoxy resin, a hardener and a hardening accelerator, as constituent ingredients, the process comprising: a first step of melt-kneading the ingredients together; and a second step of regulating viscosity of the molten mixture obtained in the first step at a given temperature, and wherein the molten mixture is spread into a sheet form and allowed to stand in this state at a given temperature.
  • the molten mixture comprising an epoxy resin, a hardener and a hardening accelera tor, obtained in the first step, is regulated in viscosity at a given temperature in the second step, the resulting epoxy resin composition can have a viscosity necessary for molding, e.g., transfer molding, when the mixture is thermally melted in the molding operation.
  • given temperature used herein generally means a temperature of about 35 to 80°C.
  • the epoxy resin composition for photosemiconductor element encapsulation to be produced by the invention comprises an epoxy resin, a hardener and a hardening accelerator.
  • the epoxy resin examples include bisphenol A epoxy resins; bisphenol F epoxy resins; novolac epoxy resins such as phenolic novolac epoxy resins and cresol novolac epoxy resins; alicyclic epoxy resins; nitrogen-containing epoxy resins such as triglycidyl isocyanurate and hydantoin epoxy resins; hydrogenated bisphenol A epoxy resins; aliphatic epoxy resins; glycidyl ether epoxy resins; bisphenol S epoxy resins; and biphenyl epoxy resins, dicyclo epoxy resins and naphthalene epoxy resins, which are mainly used as epoxy resins of the type giving low water absorption cured resins. These epoxy resins may be used alone or in combination of two or more thereof. Preferred of these epoxy resins are bisphenol A epoxy resins, bisphenol F epoxy resins, novolac epoxy resins, alicyclic epoxy resins and triglycidyl isocyanurate, which are excellent in transparency and resistance to discoloration.
  • an epoxy resin which is solid at room temperature is preferably used.
  • epoxy resins having an average epoxy equivalent of from 90 to 1,000 are preferably used.
  • epoxy resins having a softening point of 160°C or lower are preferably used. If an epoxy resin having an epoxy equivalent lower than 90 is used, there are cases where the epoxy resin composition for photosemiconductor element encapsulation, containing such an epoxy resin gives a brittle cured resin. On the other hand, if an epoxy resin having an epoxy equivalent exceeding 1,000 is used, there are cases where the composition containing such an epoxy resin gives a cured resin having a lowered glass transition temperature (T g ).
  • Examples of the hardener used in the invention include acid anhydride hardeners and phenolic hardeners.
  • the acid anhydride hardeners include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, glutaric anhydride, methylhexahydrophthalic anhydride and methyltetrahydrophthalic anhydride. These may be used alone or in combination of two or more thereof.
  • Preferred of these acid anhydride hardeners are phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and methylhexahydrophthalic anhydride.
  • Preferred acid anhydride hardeners are ones having a molecular weight of about from 140 to 200. Also preferred are acid anhydrides which are colorless or light-yellow.
  • phenolichardeners examples include phenolic novolac resin hardeners.
  • An epoxy resin and a hardener are mixed with each other in such a proportion that the amount of the active groups in the hardener (acid anhydride groups or hydroxyl groups) reactive with epoxy groups is preferably from 0.5 to 1.5 equivalents, more preferably from 0.7 to 1.2 equivalents, per equivalent of the epoxy groups of the epoxy resin. If the amount of the active groups of the hardener is smaller than 0.5 equivalents, there are cases where the epoxy resin composition for photosemiconductor element encapsulation has a decreased curing rate and gives a cured resin having a lowered glass transition temperature. On the other hand, if the amount thereof exceeds 1.5 equivalents, there are cases where moisture resistance of a cured resin is impaired.
  • conventional hardeners for epoxy resins may be used according to the intended use of the composition.
  • the conventional hardener include amine hardeners, hardeners obtained by partially esterifying acid anhydride hardeners with an alcohol, and carboxylic acid hardeners such as hexahydrophthalic acid, tetrahydrophthalic acid, and methylhexahydrophthalic acid.
  • Such hardeners may be used alone or in combination with one or more of acid anhydride hardeners and phenolic hardeners.
  • use of a carboxylic acid hardener in combination with an acid anhydride or phenolic hardener is effective in increasing the rate of curing and hence in improving productivity.
  • the proportion thereof (equivalent ratio) may be the same as in the case of using acid anhydride hardeners and phenolic hardeners.
  • the hardening accelerator is not particularly limited. Examples thereof include 1,8-diazabicyclo[5,4,0]undecene-7, triethylenediamine, tertiary amines such as tri-2,4,6-dimethylaminomethylphenol, imidazole derivatives such as 2-ethyl-4-methylimidazole and 2-methylimidazole, phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium tetraphenylborate, and tetra-n-butylphosphonium o,o-diethyl phosphorodithioate, quaternary ammonium salts, organic metal salts, and derivatives of these. Such hardening accelerators may be used alone or in combination of two or more thereof. Preferred of these hardening accelerators are the tertiary amines, imidazole derivatives and phosphorus compounds.
  • the content of the hardening accelerator is preferably from 0.01 to 8.0% by weight, more preferably from 0.1 to 3.0% by weight, based on the weight of the epoxy resin. If the content of the hardening accelerator is lower than 0.1% by weight, there are cases where a sufficient hardening-accelerating effect is not obtained. On the other hand, if the content thereof exceeds 8.0% by weight, there are cases where the composition gives a discolored cured resin.
  • additives which have conventionally been used may be appropriately incorporated into the epoxy resin composition for photosemiconductor element encapsulation of the invention, if required and necessary.
  • the additives include deterioration inhibitors, modifiers, couplingagents, defoamers, inorganic powders, levelingagents, release agents, dyes and pigments.
  • Examples of the deterioration inhibitors include conventional deterioration inhibitors such as phenol compounds, amine compounds, organosulfur compounds, and phosphine compounds.
  • Examples of the modifiers include conventional modifiers such as glycols, silicones, and alcohols.
  • Examples of the coupling agents include conventional coupling agents such as the silane type and titanate type.
  • Examples of the defoamers include conventional defoamers such as silicone compounds.
  • Examples of the inorganic powders include conventional inorganic powders such as silica powders and glass powders.
  • the ingredients described above are melt-mixed together in the first step.
  • the viscosity of the molten mixture obtained in the first step is regulated at a given temperature.
  • an epoxy resin is melt-mixed with a hardener and a hardening accelerator and optionally with various additives.
  • This melt mixing may be conducted by a conventional method.
  • the following method may be employed: a method comprising introducing the ingredients into a vessel and melt-mixing them batch-wise or a method comprising introducing the ingredients into a kneading machine (kneader or heated roll mill) and melt-mixing them continuously. It is however preferred to introduce the ingredients into a kneading machine to continuously melt-mix them.
  • This continuous method of melt mixing enables efficient production.
  • This melt mixing operation in the first step is preferably conducted in the following manner.
  • an epoxy resin is mixed with a hardener and optionally with various additives.
  • a hardening accelerator and various optional additives are added to and mixed with the resulting molten mixture.
  • a hardening accelerator is added to the molten mixture in which the epoxy resin and the hardener have been sufficiently and uniformly mixed with each other. Because of this, the epoxy resin and the hardener can be effectively prevented from locally reacting with each other before being sufficiently mixed with each other.
  • the mixing operation described above is preferably conducted in such a manner that an epoxy resin is mixed with a hardener and various optional additives with heating and the resulting molten mixture is mixed with a hardening accelerator and various optional additives with cooling.
  • these ingredients can be sufficiently and uniformly melt-mixed.
  • the hardening accelerator can be sufficiently and uniformly mixed with the molten mixture while inhibiting the reaction of the epoxy resin with the hardener.
  • the ingredients may be heated to about 100 to 160°C with a heating apparatus such as a heater.
  • the ingredients may be cooled by circulating a cooling medium such as cooling water with a cooling apparatus such as a jacket.
  • the molten mixture obtained by the first step is in a semi-cured state (B-stage). This molten mixture is then cooled to ordinary temperature by air blowing or another means. Subsequently, in the second step, the molten mixture obtained in the first step is subjected to viscosity regulation at a given temperature.
  • the viscosity regulation may be accomplished by aging at a given temperature the molten mixture obtained in the first step. Specifically, the molten mixture is aged at a temperature of, for example, from 30 to 80°C, preferably from 40 to 60°C, for from 1 to 70 hours, preferably from 5 to 40 hours, although such conditions vary depending on the composition of the mixture.
  • the molten mixture is regulated so as to have a minimum melt viscosity as measured at 150°C of generally from 2 to 50 Pa ⁇ s, preferably from 8 to 25 Pa ⁇ s, more preferably from 8 to 20 Pa ⁇ s, most preferably from 9 to 12 Pa ⁇ s. If the viscosity of the molten mixture is lower than the lower limit, there are cases where molding failures such as burrs and bubbles result. If the viscosity thereof is higher than the upper limit, there are cases where molding failures such as unfilled spaces and wire sway result. Viscosity can be measured with a KOUKA-flow tester (manufactured by Shimadzu Corp.).
  • This aging is preferably conducted while maintaining the molten mixture in a sheet-form spread state.
  • the sheet-form spread state enables the molten mixture to be uniformly and efficiently regulated in viscosity.
  • the molten mixture can be aged in the form of a mass, this aging tends to cause gelatin in a central part thereof.
  • the molten mixture may, for example, be spread on a pallet or the like.
  • the thickness of the spread sheet is regulated to preferably from 2 to 70 mm, more preferably from 2 to 40 mm, most preferably from 6 to 25 mm, by regulating the amount of the molten mixture to be spread. If the thickness thereof is smaller than the lower limit, the molten mixture has too large surface area, so that there are cases where the composition absorbs water upon temperature changes before and after the aging to give a cured resin having a lowered glass transition temperature (T g ). If the thickness thereof is larger than the upper limit, there are cases where the composition gels due to heat build-up. Furthermore, thicknesses of from 2 to 40 mm, especially from 6 to 25 mm, are advantageous in that they result in stable viscosities.
  • the epoxy resin composition for photosemiconductor element encapsulation is cooled again to ordinary temperature by air blowing or another means. Thereafter, the composition may be formed into tablets through pulverization and tableting in a conventional manner.
  • the epoxy resin composition for photosemiconductor element encapsulation thus obtained is used for the encapsulation of photosemiconductor elements such as LEDs and CCDs.
  • the composition is thermally melted, charged into a mold in which the photosemiconductor element is disposed, and then cured to thereby encapsulate the photosemiconductor element.
  • the epoxy resin composition for photosemiconductor element encapsulation produced by the process described above is thermally melted in molding, e.g., transfer molding, a viscosity necessary for the molding can be secured because the molten mixture obtained in the first step, which comprises an epoxy resin, a hardener and a hardening accelerator, was regulated in viscosity at a given temperature in the second step.
  • the molten mixture obtained in the first step which comprises an epoxy resin, a hardener and a hardening accelerator
  • An epoxy resin composition for photosemiconductor element encapsulation was prepared according to the formulation shown below.
  • epoxy resins were melt-mixed with a hardener at 120°C with a kneading machine.
  • a hardening accelerator was added to the resulting molten mixture of the epoxy resins and the hardener, and these ingredients were mixed while being cooled.
  • Epoxy resins Bisphenol A epoxy resin (epoxy equivalent: 650) 80 parts by weight Triglycidyl isocyanurate 20 parts by weight Hardener: 4-Methylhexahydrophthalic anhydride/hexahydrophthalic anhydride mixture 50 parts by weight Hardening accelerator: 2-Ethyl-4-methylimidazole 0.4 parts by weight
  • the molten mixture obtained was cooled to ordinary temperature by air blowing. This molten mixture was spread on a pallet into a sheet form having a thickness of 0.5 mm and then aged at 50°C for 20 hours to thereby regulate the resulting epoxy resin composition for photosemiconductor element encapsulation so as to have a minimum melt viscosity as measured at 150°C of 7 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 2 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 8 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 6 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 9 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 10 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photo semiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 10 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 25 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 12 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 40 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 20 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 70 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 25 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in an 80 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 30 Pa ⁇ s.
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the mixture obtained by melt-mixing the ingredients with the kneading machine was directly pulverized and tableted without being aged. After the melt mixing, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 0.2 Pa ⁇ s.
  • Example Comparative Example 1 1 2 3 4 5 6 7 8 Sheet thickness (mm) 0.5 2 6 10 25 40 70 80 No sheet aging Minimum melt viscosity at 150°C (Pa ⁇ s) 7 8 9 10 12 20 25 30 0.2 Burrs in molding None None None None None None None None Many burrs Bubbles in molding none none none none none some bubbles Many bubbles T g (°C) 120 128 128 128 128 128 128 128 128 128 128
  • the above Table shows the following.
  • the cured resins obtained from the compositions of Examples 2 to 7 had undergone no burr or bubble formation in the molding and further had a high T g .
  • the cured resin obtained from the composition of Example 1 had a low T g , although free from burr or bubble formation in the molding.
  • the composition of Example 8 underwent slight bubble formation in the molding. This is thought to be attributable to the reduced flowability in molding due to partial gelation in aging. In contrast to these, in the composition of the Comparative Example, many burrs and bubbles were formed in the molding.
  • the epoxy resin composition produced by the process is thermally melted in molding, e.g., transfer molding
  • a viscosity necessary for the molding can be secured because the molten mixture obtained in the first step, which comprises an epoxy resin, a hardener and a hardening accelerator, is regulated in viscosity at a given temperature in the second step.

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Description

  • The present invention relates to a process for producing an epoxy resin composition for use in the encapsulation of photosemiconductor elements.
  • Epoxy resin compositions have conventionally been used extensively as resin compositions for use in the encapsulation of photosemiconductor elements such as LEDs (light-emitting diodes). Such an epoxy resin composition for photosemiconductor element encapsulation usually comprises an epoxy resin, a hardener, and a hardening accelerator. This composition is generally used in the following manner. These ingredients are melt-mixed beforehand to obtain semi-cured (B-stage) tablets. In molding, e.g., transfer molding, the tablets are thermally melted, charged into a mold in which a photosemiconductor element is disposed, and then cured to thereby encapsulate the photosemiconductor element.
  • However, when the melt of an epoxy resin composition for photosemiconductor element encapsulation has too low viscosity during molding, there are cases where the cured resin obtained therefrom has molding failures such as burrs and bubbles.
  • On the other hand, a technique for preventing such molding failures is known in which the viscosity of a resin composition to be used for molding is increasedby, for example, incorporating a filler or the like thereinto.
  • However, epoxy resin compositions for photosemiconductor element encapsulation are required to give transparent cured resins because it is necessary to secure satisfactory luminescence of encapsulated photosemiconductor elements. It is therefore undesirable to incorporate a filler or the like so as to increase viscosity.
  • EP-A-1090942 relates to a process for producing an epoxy resin composition comprising an epoxy resin, an acid anhydride-based curing agent and a hardening accelerator. In a first step, the ingredients are melt-mixed together; in a second step, the fluidity of the resin composition is adjusted by adding an organic solvent.
  • EP-A-1004630 relates to a process for producing an epoxy resin composition comprising an epoxy resin, a phenolic resin and a hardening accelerator. In a first step the ingredients are melt-mixed together; in a second step, a satisfactory flowability can be obtained by using one or more inorganic fillers.
  • The object of the invention is to provide a process for producing an epoxy resin composition for photosemiconductor element encapsulation which, even when a filler or the like is not contained therein, can have a viscosity necessary for molding and hence be satisfactorily molded to give a cured resin less apt to have defects such as burrs or bubbles.
  • In order to accomplish the object, the invention provides a process for producing an epoxy resin composition for photosemiconductor element encapsulation comprising an epoxy resin, a hardener and a hardening accelerator, as constituent ingredients, the process comprising: a first step of melt-kneading the ingredients together; and a second step of regulating viscosity of the molten mixture obtained in the first step at a given temperature, and wherein the molten mixture is spread into a sheet form and allowed to stand in this state at a given temperature.
  • According to this process, since the molten mixture comprising an epoxy resin, a hardener and a hardening accelera tor, obtained in the first step, is regulated in viscosity at a given temperature in the second step, the resulting epoxy resin composition can have a viscosity necessary for molding, e.g., transfer molding, when the mixture is thermally melted in the molding operation.
  • By allowing the sheet-form spread mixture to stand at a given temperature, viscosity regulation can be conducted uniformly and efficiently.
  • The term "given temperature" used herein generally means a temperature of about 35 to 80°C.
  • The epoxy resin composition for photosemiconductor element encapsulation to be produced by the invention comprises an epoxy resin, a hardener and a hardening accelerator.
  • Examples of the epoxy resin include bisphenol A epoxy resins; bisphenol F epoxy resins; novolac epoxy resins such as phenolic novolac epoxy resins and cresol novolac epoxy resins; alicyclic epoxy resins; nitrogen-containing epoxy resins such as triglycidyl isocyanurate and hydantoin epoxy resins; hydrogenated bisphenol A epoxy resins; aliphatic epoxy resins; glycidyl ether epoxy resins; bisphenol S epoxy resins; and biphenyl epoxy resins, dicyclo epoxy resins and naphthalene epoxy resins, which are mainly used as epoxy resins of the type giving low water absorption cured resins. These epoxy resins may be used alone or in combination of two or more thereof. Preferred of these epoxy resins are bisphenol A epoxy resins, bisphenol F epoxy resins, novolac epoxy resins, alicyclic epoxy resins and triglycidyl isocyanurate, which are excellent in transparency and resistance to discoloration.
  • Although such an epoxy resin may liquid at room temperature (e.g., about 15-35°C), an epoxy resin which is solid at room temperature is preferably used. In general, epoxy resins having an average epoxy equivalent of from 90 to 1,000 are preferably used. Further, epoxy resins having a softening point of 160°C or lower are preferably used. If an epoxy resin having an epoxy equivalent lower than 90 is used, there are cases where the epoxy resin composition for photosemiconductor element encapsulation, containing such an epoxy resin gives a brittle cured resin. On the other hand, if an epoxy resin having an epoxy equivalent exceeding 1,000 is used, there are cases where the composition containing such an epoxy resin gives a cured resin having a lowered glass transition temperature (Tg).
  • Examples of the hardener used in the invention include acid anhydride hardeners and phenolic hardeners. Examples of the acid anhydride hardeners include phthalic anhydride, maleic anhydride, trimellitic anhydride, pyromellitic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, methylnadic anhydride, nadic anhydride, glutaric anhydride, methylhexahydrophthalic anhydride and methyltetrahydrophthalic anhydride. These may be used alone or in combination of two or more thereof. Preferred of these acid anhydride hardeners are phthalic anhydride, hexahydrophthalic anhydride, tetrahydrophthalic anhydride, and methylhexahydrophthalic anhydride. Preferred acid anhydride hardeners are ones having a molecular weight of about from 140 to 200. Also preferred are acid anhydrides which are colorless or light-yellow.
  • Examples of the phenolichardeners include phenolic novolac resin hardeners.
  • An epoxy resin and a hardener are mixed with each other in such a proportion that the amount of the active groups in the hardener (acid anhydride groups or hydroxyl groups) reactive with epoxy groups is preferably from 0.5 to 1.5 equivalents, more preferably from 0.7 to 1.2 equivalents, per equivalent of the epoxy groups of the epoxy resin. If the amount of the active groups of the hardener is smaller than 0.5 equivalents, there are cases where the epoxy resin composition for photosemiconductor element encapsulation has a decreased curing rate and gives a cured resin having a lowered glass transition temperature. On the other hand, if the amount thereof exceeds 1.5 equivalents, there are cases where moisture resistance of a cured resin is impaired.
  • Besides the acid anhydride hardeners and phenolic hardeners, conventional hardeners for epoxy resins may be used according to the intended use of the composition. Examples the conventional hardener include amine hardeners, hardeners obtained by partially esterifying acid anhydride hardeners with an alcohol, and carboxylic acid hardeners such as hexahydrophthalic acid, tetrahydrophthalic acid, and methylhexahydrophthalic acid. Such hardeners may be used alone or in combination with one or more of acid anhydride hardeners and phenolic hardeners. For example, use of a carboxylic acid hardener in combination with an acid anhydride or phenolic hardener is effective in increasing the rate of curing and hence in improving productivity. In the case of using those hardeners also, the proportion thereof (equivalent ratio) may be the same as in the case of using acid anhydride hardeners and phenolic hardeners.
  • The hardening accelerator is not particularly limited. Examples thereof include 1,8-diazabicyclo[5,4,0]undecene-7, triethylenediamine, tertiary amines such as tri-2,4,6-dimethylaminomethylphenol, imidazole derivatives such as 2-ethyl-4-methylimidazole and 2-methylimidazole, phosphorus compounds such as triphenylphosphine, tetraphenylphosphonium tetraphenylborate, and tetra-n-butylphosphonium o,o-diethyl phosphorodithioate, quaternary ammonium salts, organic metal salts, and derivatives of these. Such hardening accelerators may be used alone or in combination of two or more thereof. Preferred of these hardening accelerators are the tertiary amines, imidazole derivatives and phosphorus compounds.
  • The content of the hardening accelerator is preferably from 0.01 to 8.0% by weight, more preferably from 0.1 to 3.0% by weight, based on the weight of the epoxy resin. If the content of the hardening accelerator is lower than 0.1% by weight, there are cases where a sufficient hardening-accelerating effect is not obtained. On the other hand, if the content thereof exceeds 8.0% by weight, there are cases where the composition gives a discolored cured resin.
  • Various known additives which have conventionally been used may be appropriately incorporated into the epoxy resin composition for photosemiconductor element encapsulation of the invention, if required and necessary. Examples the additives include deterioration inhibitors, modifiers, couplingagents, defoamers, inorganic powders, levelingagents, release agents, dyes and pigments.
  • Examples of the deterioration inhibitors include conventional deterioration inhibitors such as phenol compounds, amine compounds, organosulfur compounds, and phosphine compounds. Examples of the modifiers include conventional modifiers such as glycols, silicones, and alcohols. Examples of the coupling agents include conventional coupling agents such as the silane type and titanate type. Examples of the defoamers include conventional defoamers such as silicone compounds. Examples of the inorganic powders include conventional inorganic powders such as silica powders and glass powders.
  • In the process for producing an epoxy resin composition for photosemiconductor element encapsulation according to the invention, the ingredients described above are melt-mixed together in the first step. In the second step, the viscosity of the molten mixture obtained in the first step is regulated at a given temperature.
  • Specifically, in the first step, an epoxy resin is melt-mixed with a hardener and a hardening accelerator and optionally with various additives. This melt mixing may be conducted by a conventional method. For example, the following method may be employed: a method comprising introducing the ingredients into a vessel and melt-mixing them batch-wise or a method comprising introducing the ingredients into a kneading machine (kneader or heated roll mill) and melt-mixing them continuously. It is however preferred to introduce the ingredients into a kneading machine to continuously melt-mix them. This continuous method of melt mixing enables efficient production.
  • This melt mixing operation in the first step is preferably conducted in the following manner. First, an epoxy resin is mixed with a hardener and optionally with various additives. After the epoxy resin and the hardener have been uniformly and sufficiently mixed with each other, a hardening accelerator and various optional additives are added to and mixed with the resulting molten mixture. In this method of melt mixing, a hardening accelerator is added to the molten mixture in which the epoxy resin and the hardener have been sufficiently and uniformly mixed with each other. Because of this, the epoxy resin and the hardener can be effectively prevented from locally reacting with each other before being sufficiently mixed with each other.
  • The mixing operation described above is preferably conducted in such a manner that an epoxy resin is mixed with a hardener and various optional additives with heating and the resulting molten mixture is mixed with a hardening accelerator and various optional additives with cooling. By conducting the mixing of the epoxy resin with the hardener and various optional additives with heating, these ingredients can be sufficiently and uniformly melt-mixed. Furthermore, by conducting the mixing of the resulting molten mixture with the hardening accelerator and various optional additives with cooling, the hardening accelerator can be sufficiently and uniformly mixed with the molten mixture while inhibiting the reaction of the epoxy resin with the hardener. For mixing with heating, the ingredients may be heated to about 100 to 160°C with a heating apparatus such as a heater. For mixing with cooling, the ingredients may be cooled by circulating a cooling medium such as cooling water with a cooling apparatus such as a jacket.
  • The molten mixture obtained by the first step is in a semi-cured state (B-stage). This molten mixture is then cooled to ordinary temperature by air blowing or another means. Subsequently, in the second step, the molten mixture obtained in the first step is subjected to viscosity regulation at a given temperature.
  • The viscosity regulation may be accomplished by aging at a given temperature the molten mixture obtained in the first step. Specifically, the molten mixture is aged at a temperature of, for example, from 30 to 80°C, preferably from 40 to 60°C, for from 1 to 70 hours, preferably from 5 to 40 hours, although such conditions vary depending on the composition of the mixture.
  • Through this aging, the molten mixture is regulated so as to have a minimum melt viscosity as measured at 150°C of generally from 2 to 50 Pa·s, preferably from 8 to 25 Pa·s, more preferably from 8 to 20 Pa·s, most preferably from 9 to 12 Pa·s. If the viscosity of the molten mixture is lower than the lower limit, there are cases where molding failures such as burrs and bubbles result. If the viscosity thereof is higher than the upper limit, there are cases where molding failures such as unfilled spaces and wire sway result. Viscosity can be measured with a KOUKA-flow tester (manufactured by Shimadzu Corp.).
  • This aging is preferably conducted while maintaining the molten mixture in a sheet-form spread state. The sheet-form spread state enables the molten mixture to be uniformly and efficiently regulated in viscosity. Although the molten mixture can be aged in the form of a mass, this aging tends to cause gelatin in a central part thereof.
  • For bringing the molten mixture obtained in the first step into a sheet-form spread state, the molten mixture may, for example, be spread on a pallet or the like. The thickness of the spread sheet is regulated to preferably from 2 to 70 mm, more preferably from 2 to 40 mm, most preferably from 6 to 25 mm, by regulating the amount of the molten mixture to be spread. If the thickness thereof is smaller than the lower limit, the molten mixture has too large surface area, so that there are cases where the composition absorbs water upon temperature changes before and after the aging to give a cured resin having a lowered glass transition temperature (Tg). If the thickness thereof is larger than the upper limit, there are cases where the composition gels due to heat build-up. Furthermore, thicknesses of from 2 to 40 mm, especially from 6 to 25 mm, are advantageous in that they result in stable viscosities.
  • After having undergone the aging, the epoxy resin composition for photosemiconductor element encapsulation is cooled again to ordinary temperature by air blowing or another means. Thereafter, the composition may be formed into tablets through pulverization and tableting in a conventional manner.
  • The epoxy resin composition for photosemiconductor element encapsulation thus obtained is used for the encapsulation of photosemiconductor elements such as LEDs and CCDs. For example, in using this epoxy resin composition for encapsulating a photosemiconductor element by molding, e.g., transfer molding, the composition is thermally melted, charged into a mold in which the photosemiconductor element is disposed, and then cured to thereby encapsulate the photosemiconductor element.
  • When the epoxy resin composition for photosemiconductor element encapsulation produced by the process described above is thermally melted in molding, e.g., transfer molding, a viscosity necessary for the molding can be secured because the molten mixture obtained in the first step, which comprises an epoxy resin, a hardener and a hardening accelerator, was regulated in viscosity at a given temperature in the second step. As a result, satisfactory molding in which molding failures such as burrs or bubbles are diminished can be conducted without the necessity of incorporating a filler or the like.
  • The invention will be explained below in more detail by reference to the following Examples, but the invention should not be construed as being limited to these Examples.
    • EXAMPLE 1
  • An epoxy resin composition for photosemiconductor element encapsulation was prepared according to the formulation shown below.
  • That is, epoxy resins were melt-mixed with a hardener at 120°C with a kneading machine. A hardening accelerator was added to the resulting molten mixture of the epoxy resins and the hardener, and these ingredients were mixed while being cooled.
    • Formulation for epoxy resin composition for photosemiconductor element encapsulation
  • Epoxy resins:
    Bisphenol A epoxy resin (epoxy equivalent: 650) 80 parts by weight
    Triglycidyl isocyanurate 20 parts by weight
    Hardener:
    4-Methylhexahydrophthalic anhydride/hexahydrophthalic anhydride mixture 50 parts by weight
    Hardening accelerator:
    2-Ethyl-4-methylimidazole 0.4 parts by weight
  • The molten mixture obtained was cooled to ordinary temperature by air blowing. This molten mixture was spread on a pallet into a sheet form having a thickness of 0.5 mm and then aged at 50°C for 20 hours to thereby regulate the resulting epoxy resin composition for photosemiconductor element encapsulation so as to have a minimum melt viscosity as measured at 150°C of 7 Pa·s.
  • After the aging, the sheet was cooled again to ordinary temperature by air blowing and then pulverized and tableted. Thus, an epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets.
    • EXAMPLE 2
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 2 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 8 Pa·s.
    • EXAMPLE 3
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 6 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 9 Pa·s.
    • EXAMPLE 4
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 10 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photo semiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 10 Pa·s.
    • EXAMPLE 5
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 25 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 12 Pa·s.
    • EXAMPLE 6
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 40 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 20 Pa·s.
    • EXAMPLE 7
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in a 70 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 25 Pa·s.
    • EXAMPLE 8
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the molten mixture was spread in an 80 mm-thick sheet form on a pallet and aged. After the aging, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 30 Pa·s.
    • COMPARATIVE EXAMPLE
  • An epoxy resin composition for photosemiconductor element encapsulation was obtained as tablets in the same manner as in Example 1, except that the mixture obtained by melt-mixing the ingredients with the kneading machine was directly pulverized and tableted without being aged. After the melt mixing, the epoxy resin composition for photosemiconductor element encapsulation had a minimum melt viscosity as measured at 150°C of 0.2 Pa·s.
    • EVALUATION
  • Tablets of the epoxy resin compositions for photosemiconductor element encapsulation obtained in Examples 1 to 8 and Comparative Example were used to encapsulate an LED by transfer molding (150°C x 3 min; after cure, 150°C x 3 hr) to examine the occurrence of burrs and bubbles in the molding. The results obtained are shown in the Table below.
  • The glass transition point (Tg) of each of the cured resins formed from the compositions of Examples 1 to 8 and Comparative Example was measured with a differential scanning calorimeter (DSC) (Type Pyris-1, manufactured by Perkin-Elmer Corp.). The results obtained are shown in the Table below.
    Example Comparative Example 1
    1 2 3 4 5 6 7 8
    Sheet thickness (mm) 0.5 2 6 10 25 40 70 80 No sheet aging
    Minimum melt viscosity at 150°C (Pa·s) 7 8 9 10 12 20 25 30 0.2
    Burrs in molding None None None None None None None None Many burrs
    Bubbles in molding none none none none none none none some bubbles Many bubbles
    Tg (°C) 120 128 128 128 128 128 128 128 128
  • The above Table shows the following. The cured resins obtained from the compositions of Examples 2 to 7 had undergone no burr or bubble formation in the molding and further had a high Tg. The cured resin obtained from the composition of Example 1 had a low Tg, although free from burr or bubble formation in the molding. Furthermore, the composition of Example 8 underwent slight bubble formation in the molding. This is thought to be attributable to the reduced flowability in molding due to partial gelation in aging. In contrast to these, in the composition of the Comparative Example, many burrs and bubbles were formed in the molding.
  • According to the process for producing an epoxy resin composition for photosemiconductor element encapsulation of the invention, when the epoxy resin composition produced by the process is thermally melted in molding, e.g., transfer molding, a viscosity necessary for the molding can be secured because the molten mixture obtained in the first step, which comprises an epoxy resin, a hardener and a hardening accelerator, is regulated in viscosity at a given temperature in the second step. As a result, satisfactory molding in which molding failures such as burrs or bubbles are diminished can be conducted without the necessity of incorporating a filler or the like.

Claims (2)

  1. A process for producing an epoxy resin composition for photosemiconductor element encapsulation comprising an epoxy resin, a hardener and a hardening accelerator, as constituent ingredients, said process comprising:
    a first step of melt mixing the ingredients together; and
    a second step of regulating viscosity of the molten mixture obtained in the first step at a given temperature, and wherein the molten mixture is spread into a sheet form and allowed to stand in this state at a given temperature.
  2. The process of claim 1, wherein the spread sheet has a thickness of 2 to 70 mm.
EP01130096A 2000-12-18 2001-12-18 Process for producing epoxy resin composition for photosemiconductor element encapsulation Expired - Lifetime EP1215723B1 (en)

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JP2000383269A JP3430150B2 (en) 2000-12-18 2000-12-18 Method for producing epoxy resin composition for encapsulating optical semiconductor elements

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202008005987U1 (en) * 2008-04-30 2009-09-03 Ledon Lighting Jennersdorf Gmbh LED module with dome-shaped color conversion layer

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6881571B1 (en) * 1998-03-11 2005-04-19 Exonhit Therapeutics S.A. Qualitative differential screening
US7519558B2 (en) * 1997-08-27 2009-04-14 Ballard Claudio R Biometrically enabled private secure information repository
US6989412B2 (en) * 2001-06-06 2006-01-24 Henkel Corporation Epoxy molding compounds containing phosphor and process for preparing such compositions
US6841888B2 (en) * 2003-06-04 2005-01-11 Yazaki Corporation Encapsulant for opto-electronic devices and method for making it
DE102005009066A1 (en) * 2005-02-28 2006-09-07 Osram Opto Semiconductors Gmbh Method for producing an optical and a radiation-emitting component and optical and radiation-emitting component
CN102408542B (en) 2006-11-15 2014-10-29 日立化成工业株式会社 Heat curable resin composition for light reflection, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition
JP5207658B2 (en) * 2007-05-17 2013-06-12 日東電工株式会社 Epoxy resin composition for sealing optical semiconductor element, cured product thereof, and optical semiconductor device using the same
JP2010531913A (en) * 2007-06-28 2010-09-30 エルジー・ケム・リミテッド Transparent plastic film manufacturing method and transparent plastic film manufactured thereby
TW201011936A (en) * 2008-09-05 2010-03-16 Advanced Optoelectronic Tech Light emitting device and fabrication thereof
JP5107886B2 (en) * 2008-12-24 2012-12-26 日東電工株式会社 Manufacturing method of optical semiconductor device
CN106633668A (en) * 2016-12-30 2017-05-10 铜陵华科电子材料有限公司 Triglycidyl-isocyanurate-reinforced weather-resistant epoxy resin composite material for copper clad plates and preparation method thereof
CN116724393A (en) * 2021-01-08 2023-09-08 株式会社力森诺科 Method for producing thermosetting resin composition, and electronic component device
EP4102308A1 (en) * 2021-06-08 2022-12-14 The Swatch Group Research and Development Ltd Method for manufacturing a luminescent clock component

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01172420A (en) * 1987-12-27 1989-07-07 Narumi China Corp Resin composition for semiconductor sealing
US5198479A (en) * 1990-08-24 1993-03-30 Shin-Etsu Chemical Company Limited Light transmissive epoxy resin compositions and optical semiconductor devices encapsulated therewith
JPH0578445A (en) * 1991-09-25 1993-03-30 Sumitomo Chem Co Ltd Epoxy resin composition
JPH06128546A (en) * 1992-10-15 1994-05-10 Sekisui Chem Co Ltd Adhesive composition
US5338782A (en) * 1993-05-27 1994-08-16 Shell Oil Company Dialkylidenecyclobutane/bisimide/epoxy compositions
US5458929A (en) * 1994-02-15 1995-10-17 The Dow Chemical Company Cure controlled catalyzed mixtures of epoxy resins and curing agents containing mesogenic moieties, B-staged and cured products therefrom
JPH09208805A (en) 1994-11-09 1997-08-12 Nitto Denko Corp Epoxy resin composition for sealing optical semiconductor device
JPH09255764A (en) 1996-03-26 1997-09-30 Nitto Denko Corp Cured epoxy resin composition for sealing cptical semiconductor and optical semiconductor device made using the same
JPH11111741A (en) * 1997-10-08 1999-04-23 Hitachi Chem Co Ltd Epoxy resin tablet for sealing optical semiconductor and optical semiconductor sealed with same tablet
JP3481452B2 (en) 1998-03-23 2003-12-22 日東電工株式会社 Epoxy resin composition for encapsulating optical semiconductor element and optical semiconductor device using the same
JP3851441B2 (en) * 1998-04-23 2006-11-29 日東電工株式会社 Epoxy resin composition for optical semiconductor element sealing and optical semiconductor device
EP1004630B1 (en) 1998-06-09 2003-12-03 Nitto Denko Corporation Semiconductor sealing epoxy resin composition and semiconductor device using the same
KR100563509B1 (en) * 1998-09-25 2006-03-23 신에쓰 가가꾸 고교 가부시끼가이샤 Epoxy Resin Compositions, and Laminated Films and Semiconductor Devices Using the Epoxy Resin Compositions
MY126953A (en) 1999-10-06 2006-11-30 Nitto Denko Corp Resin composition for semiconductor encapsulation, semiconductor device comprising the same and process for the production of semiconductor device using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202008005987U1 (en) * 2008-04-30 2009-09-03 Ledon Lighting Jennersdorf Gmbh LED module with dome-shaped color conversion layer

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CN1186387C (en) 2005-01-26
US6713571B2 (en) 2004-03-30
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US20020117774A1 (en) 2002-08-29
EP1215723A1 (en) 2002-06-19

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