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EP1039561A3 - Lichtemittierende Vorrichtung - Google Patents

Lichtemittierende Vorrichtung Download PDF

Info

Publication number
EP1039561A3
EP1039561A3 EP00105920A EP00105920A EP1039561A3 EP 1039561 A3 EP1039561 A3 EP 1039561A3 EP 00105920 A EP00105920 A EP 00105920A EP 00105920 A EP00105920 A EP 00105920A EP 1039561 A3 EP1039561 A3 EP 1039561A3
Authority
EP
European Patent Office
Prior art keywords
light
grating
band gap
emitting device
photonic band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00105920A
Other languages
English (en)
French (fr)
Other versions
EP1039561A2 (de
Inventor
Tomoko Koyama
Takeo Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of EP1039561A2 publication Critical patent/EP1039561A2/de
Publication of EP1039561A3 publication Critical patent/EP1039561A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/36—Structure or shape of the active region; Materials used for the active region comprising organic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
EP00105920A 1999-03-23 2000-03-23 Lichtemittierende Vorrichtung Withdrawn EP1039561A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11077869A JP2000277260A (ja) 1999-03-23 1999-03-23 発光装置
JP7786999 1999-03-23

Publications (2)

Publication Number Publication Date
EP1039561A2 EP1039561A2 (de) 2000-09-27
EP1039561A3 true EP1039561A3 (de) 2001-08-16

Family

ID=13646072

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00105920A Withdrawn EP1039561A3 (de) 1999-03-23 2000-03-23 Lichtemittierende Vorrichtung

Country Status (4)

Country Link
US (1) US6727646B1 (de)
EP (1) EP1039561A3 (de)
JP (1) JP2000277260A (de)
KR (1) KR100507393B1 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6804280B2 (en) * 2001-09-04 2004-10-12 Pbc Lasers, Ltd. Semiconductor laser based on the effect of photonic band gap crystal-mediated filtration of higher modes of laser radiation and method of making the same
KR100463702B1 (ko) * 2001-09-27 2004-12-29 윈텍 주식회사 전기 발광소자
US20030123827A1 (en) * 2001-12-28 2003-07-03 Xtalight, Inc. Systems and methods of manufacturing integrated photonic circuit devices
US20050169591A1 (en) * 2002-03-15 2005-08-04 Technical University Of Denmark, Dtu Planar optical waveguides with photonic crystal structure
US6670772B1 (en) * 2002-06-27 2003-12-30 Eastman Kodak Company Organic light emitting diode display with surface plasmon outcoupling
US7319709B2 (en) 2002-07-23 2008-01-15 Massachusetts Institute Of Technology Creating photon atoms
CN1756977A (zh) * 2003-03-04 2006-04-05 日本板硝子株式会社 使用了光子晶体的波导器件
JPWO2004081625A1 (ja) 2003-03-04 2006-06-15 日本板硝子株式会社 フォトニック結晶を用いた導波路素子
JP2005063839A (ja) * 2003-08-13 2005-03-10 Toshiba Matsushita Display Technology Co Ltd 光学デバイス及び有機ｅｌ表示装置
US7199518B2 (en) * 2003-10-21 2007-04-03 Corning Incorporated OLED structures with barrier layer and strain relief
KR100563059B1 (ko) * 2003-11-28 2006-03-24 삼성에스디아이 주식회사 유기 전계 발광 디스플레이 장치 및 이의 제조에 사용되는레이저 열전사용 도너 필름
KR100730121B1 (ko) * 2004-11-29 2007-06-19 삼성에스디아이 주식회사 유기 전계 발광 소자 및 그 제조 방법
JP2006310737A (ja) * 2005-03-29 2006-11-09 Seiko Epson Corp 発光素子、発光素子の製造方法及び画像表示装置
US20080238310A1 (en) * 2007-03-30 2008-10-02 Forrest Stephen R OLED with improved light outcoupling
EP2439806B1 (de) * 2007-03-30 2014-01-15 The Regents of the University of Michigan Oled mit verbesserter lichtauskopplung
US9508957B2 (en) * 2007-03-30 2016-11-29 The Regents Of The University Of Michigan OLED with improved light outcoupling
TWI408832B (zh) * 2009-03-30 2013-09-11 Huga Optotech Inc 具有中空結構之柱狀結構之發光元件及其形成方法
US20130161679A1 (en) * 2010-09-02 2013-06-27 Showa Denko K.K. Electroluminescent element, electroluminescent element manufacturing method, display device, and illumination device
GB201015417D0 (en) * 2010-09-15 2010-10-27 Lomox Ltd Organic light emitting diode devices
KR102527387B1 (ko) 2016-02-24 2023-04-28 삼성전자주식회사 발광 소자 패키지 및 그 제조 방법
JP7424038B2 (ja) * 2019-12-23 2024-01-30 セイコーエプソン株式会社 発光装置、および、プロジェクター

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5784400A (en) * 1995-02-28 1998-07-21 Massachusetts Institute Of Technology Resonant cavities employing two dimensionally periodic dielectric materials
JPH10284806A (ja) * 1997-04-10 1998-10-23 Canon Inc フォトニックバンド構造を有する垂直共振器レーザ
EP0878883A1 (de) * 1997-05-13 1998-11-18 Lucent Technologies Inc. Vorrichtung mit einem organischen Laser

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158989A (ja) 1982-03-16 1983-09-21 Nippon Telegr & Teleph Corp <Ntt> 分布帰還半導体レ−ザ
JPS6372665A (ja) 1986-09-12 1988-04-02 Fuji Xerox Co Ltd 電子写真用電荷輸送材料の製造方法
JPS63175860A (ja) 1987-01-16 1988-07-20 Fuji Xerox Co Ltd 電子写真感光体
JP2559614B2 (ja) 1988-03-01 1996-12-04 宇部興産株式会社 ポリイミドパターン層の形成法およびその方法に使用するリンス液
JP2622143B2 (ja) 1988-03-28 1997-06-18 キヤノン株式会社 分布帰還型半導体レーザ及び分布帰還型半導体レーザの作成方法
JP2717274B2 (ja) 1988-08-12 1998-02-18 住友化学工業株式会社 光制御板及びその製造方法
JPH02135361A (ja) 1988-11-16 1990-05-24 Fuji Xerox Co Ltd 電子写真感光体
JPH02135359A (ja) 1988-11-16 1990-05-24 Fuji Xerox Co Ltd 電子写真感光体
JPH03152184A (ja) 1989-11-08 1991-06-28 Nec Corp 有機薄膜ｅｌ素子
JP2989694B2 (ja) 1991-07-30 1999-12-13 ポーラ化成工業株式会社 ゲル状パック料
JPH0539480A (ja) 1991-08-05 1993-02-19 Nippon Telegr & Teleph Corp <Ntt> フオトリフラクテイブ組成物
DE4228853C2 (de) 1991-09-18 1993-10-21 Schott Glaswerke Optischer Wellenleiter mit einem planaren oder nur geringfügig gewölbten Substrat und Verfahren zu dessen Herstellung sowie Verwendung eines solchen
JP3197609B2 (ja) 1992-04-17 2001-08-13 日東電工株式会社 液晶表示装置
JPH06201907A (ja) 1992-12-29 1994-07-22 Olympus Optical Co Ltd ブレーズ格子製造方法
JPH06224115A (ja) 1993-01-25 1994-08-12 Matsushita Electric Ind Co Ltd レジストパターン形成方法
JP2947694B2 (ja) 1993-07-02 1999-09-13 株式会社日立製作所 レジストパターン形成方法
US5804919A (en) * 1994-07-20 1998-09-08 University Of Georgia Research Foundation, Inc. Resonant microcavity display
US5452318A (en) 1993-12-16 1995-09-19 Northern Telecom Limited Gain-coupled DFB laser with index coupling compensation
JPH07181689A (ja) 1993-12-22 1995-07-21 Du Pont Kk 基板上にパターン化されたポリイミド被膜を形成させる方法
JPH07235075A (ja) 1994-02-23 1995-09-05 Dainippon Printing Co Ltd 光ヘッド用回折格子とその作製方法
GB2287553A (en) 1994-03-10 1995-09-20 Sharp Kk A method of manufacturing a diffuser
US6064783A (en) 1994-05-25 2000-05-16 Congdon; Philip A. Integrated laser and coupled waveguide
JPH08248276A (ja) 1995-03-07 1996-09-27 Idemitsu Kosan Co Ltd 光ファイバーと有機ｅｌ素子との結合構造
GB9520912D0 (en) 1995-10-12 1995-12-13 Nashua Corp Improvements in or relating to projection screens and the like
JP2914486B2 (ja) 1995-12-26 1999-06-28 清藏 宮田 光ファイバ、及びその製造方法
JPH09232669A (ja) 1996-02-22 1997-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子
JPH09311238A (ja) 1996-05-22 1997-12-02 Sumitomo Electric Ind Ltd 光導波路型回折格子の作成方法
JPH108300A (ja) 1996-06-26 1998-01-13 Acs:Kk 電解脱脂装置
JPH1026702A (ja) 1996-07-12 1998-01-27 Nikon Corp フォトクロミックプラスチックレンズ
JP3452733B2 (ja) 1996-08-13 2003-09-29 日本板硝子株式会社 回折型の光学素子の製造方法
JP3899566B2 (ja) 1996-11-25 2007-03-28 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
JPH10279439A (ja) 1997-03-31 1998-10-20 Kureha Chem Ind Co Ltd 発毛育毛剤
ATE281011T1 (de) 1997-05-09 2004-11-15 Univ Princeton Organische laser
EP1044488A1 (de) 1997-12-31 2000-10-18 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Laser mit einem organischen emittermaterial und verteilter rückkopplung
JP3931936B2 (ja) 1998-05-11 2007-06-20 セイコーエプソン株式会社 マイクロレンズアレイ基板及びその製造方法並びに表示装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5784400A (en) * 1995-02-28 1998-07-21 Massachusetts Institute Of Technology Resonant cavities employing two dimensionally periodic dielectric materials
JPH10284806A (ja) * 1997-04-10 1998-10-23 Canon Inc フォトニックバンド構造を有する垂直共振器レーザ
EP0878883A1 (de) * 1997-05-13 1998-11-18 Lucent Technologies Inc. Vorrichtung mit einem organischen Laser

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
HIRAYAMA H ET AL: "Novel spontaneous emission control using 3-dimensional photonic bandgap crystal cavity", MATERIALS SCIENCE AND ENGINEERING B,ELSEVIER SEQUOIA, LAUSANNE,CH, vol. 51, no. 1-3, 27 February 1998 (1998-02-27), pages 99 - 102, XP004129542, ISSN: 0921-5107 *
PATENT ABSTRACTS OF JAPAN vol. 1999, no. 01 29 January 1999 (1999-01-29) *

Also Published As

Publication number Publication date
EP1039561A2 (de) 2000-09-27
KR100507393B1 (ko) 2005-08-10
US6727646B1 (en) 2004-04-27
JP2000277260A (ja) 2000-10-06
KR20010014503A (ko) 2001-02-26

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