[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

EP1097483A2 - Dispositif pour la detection d'un rayonnement electromagnetique - Google Patents

Dispositif pour la detection d'un rayonnement electromagnetique

Info

Publication number
EP1097483A2
EP1097483A2 EP99939957A EP99939957A EP1097483A2 EP 1097483 A2 EP1097483 A2 EP 1097483A2 EP 99939957 A EP99939957 A EP 99939957A EP 99939957 A EP99939957 A EP 99939957A EP 1097483 A2 EP1097483 A2 EP 1097483A2
Authority
EP
European Patent Office
Prior art keywords
imaging system
detector structure
detector
optical imaging
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99939957A
Other languages
German (de)
English (en)
Inventor
Manfred Rothley
Roland Mueller-Fielder
Erich Zabler
Lars Erdmann
Wilhelm Leneke
Marion Simon
Karlheinz Storck
Joerg Schieferdecker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Excelitas Technologies Singapore Pte Ltd
Original Assignee
Robert Bosch GmbH
Heimann Optoelectronics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19923606A external-priority patent/DE19923606A1/de
Application filed by Robert Bosch GmbH, Heimann Optoelectronics GmbH filed Critical Robert Bosch GmbH
Publication of EP1097483A2 publication Critical patent/EP1097483A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • G01J1/04—Optical or mechanical part supplementary adjustable parts
    • G01J1/06—Restricting the angle of incident light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/04—Casings
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0806—Focusing or collimating elements, e.g. lenses or concave mirrors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/12—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using thermoelectric elements, e.g. thermocouples

Definitions

  • the invention relates to a device for detecting electromagnetic radiation with local resolution according to the preamble of claim 1.
  • Common semiconductor detectors for example for infrared radiation, comprise a detector structure built on a semiconductor substrate. Detector arrays consisting of so-called thermopile sensors can be used to detect infrared radiation.
  • the substrate of the detector structure is usually connected to a housing in which a protective window is enclosed above the detector structure.
  • the protective window is transparent to the radiation to be detected and protects the detector structure from disturbing influences from the environment, for example from contamination.
  • an imaging sensor In connection with a spatially resolving detector array, an imaging sensor can be used with such a device will be realized. Imaging IR sensors are required, for example, for vehicle interior surveillance.
  • an optical imaging system e.g. B. an imaging lens can be provided, which images the object to be imaged on the level of the detector array.
  • Conventional imaging lenses with conventional materials represent a considerable cost factor for such sensor systems. Inexpensive plastic lenses are limited in their application, since they are sensitive to temperature, for example.
  • the invention has the object to provide a device for detecting electromagnetic radiation with local resolution for imaging purposes, which is inexpensive to manufacture and assemble.
  • a device is characterized in that a micromechanically producible, optical imaging system is provided.
  • Such an imaging system in particular in the form of a lens, can be produced micromechanically from semiconductor material, for example from silicon, in large numbers and inexpensively.
  • the imaging properties and the temperature stability of such systems are sufficient, particularly in the infrared range, to equip them with imaging sensors.
  • the micromechanically producible imaging system is rigidly connected to the semiconductor substrate of the detector structure. This connection can be made, for example, by mounting on a protective housing for the detector structure. Due to the rigid connection to the detector structure, the device according to the invention is not required Adjustment of the imaging system ready for use, which reduces the assembly effort for the detector device on site.
  • a micromechanically producible optical imaging system can, for example, comprise a plurality of lenses, as a result of which such an imaging system is particularly suitable for the use of a detector structure with a plurality of separate detector elements. It is particularly advantageous to assign a lens to a detector element. In a development of this embodiment, the optical axes of the individual lenses are aligned differently, which results in a large detection angle for room monitoring.
  • the combination of one or more lenses, each with a group of detector elements is advantageous depending on the application, for example in order in turn to achieve a large detection angle of a detector structure comprising a plurality of detector elements or to achieve local resolution for a group of detector elements.
  • the optical imaging system is also used as a protective window for the detector structure. In this way, a separate protective window is unnecessary and the device according to the invention is less expensive.
  • the optical imaging system for. B. one or more micromechanical lens preferably fixed in place of the previous protective window in the corresponding version of the protective housing.
  • micromechanical imaging system are connected to the substrate of the detector structure via spacers.
  • connection can be made, for example, by gluing or by anodic bonding, etc. All known and future connection types in the semiconductor field, in particular in the case of silicon, can be used for this.
  • a so-called lens array consisting of a plurality of lenses, as mentioned above, can be rigidly connected to the detector array, for example with the aid of micromechanical spacers as intermediate carriers with small distance tolerances.
  • a rigid connection enables the device to be used without further adjustment.
  • Individual detector elements of a detector structure can be separated from one another by optical partition walls. These dividing walls, which can be formed, for example, by the surface of an intermediate carrier, for example in the form of a honeycomb, can prevent undesired coupling of radiation onto an adjacent detector element.
  • an intermediate carrier is preferably made of an infrared-opaque material, such as. B. Pyrex glass manufactured.
  • a corresponding coating of the partition can also be provided.
  • the micromechanical imaging system is preferably built on a semiconductor substrate.
  • the substrate of the imaging system can be easily connected to the substrate of the detector structure, for example in one of the ways indicated above. It is particularly advantageous here if the substrate of the optical imaging system and the substrate of the detector system have the same material, so that a connection between the two substrates is readily possible. If necessary, a spacer can also have the same material. The use of silicon is particularly suitable here.
  • the detector structure is attached to the back of the substrate of the optical imaging system.
  • the detector structure can be placed on the substrate of the imaging system as a separate structure with spacers and connected to it.
  • the adjustment of the imaging system to the detector can be carried out in this embodiment as well as in the example described above with spacers at the wafer level before the individual sensors are separated. This means that two wafers with a large number of micromechanical imaging systems and a large number of detector structures are adjusted to one another and fastened to one another before the individual sensors are separated by opening the wafers. This makes the adjustment particularly easy and highly precise.
  • the detector structure is constructed on the back of the substrate of the imaging system in a monolithic construction.
  • the complete arrangement consisting of imaging system and detector structure is built on a wafer.
  • this embodiment would be the most highly developed embodiment variant of the invention, with correspondingly great advantages in terms of production expenditure and adjustment.
  • a detector structure which is irradiated from the rear is recommended. This means that the substrate on which the detector structure is built must be transparent to the radiation to be detected.
  • thermopile sensors To build up proven thermopile sensors in this design, it makes sense to use a membrane e.g. B. build from silicon nitride to avoid excessive heat diffusion of the heat generated when the radiation to be detected. This heat is detected by appropriate thermopile elements.
  • a membrane e.g. B. build from silicon nitride to avoid excessive heat diffusion of the heat generated when the radiation to be detected. This heat is detected by appropriate thermopile elements.
  • a membrane can be produced, for example, by anisotropically etching a cavern and / or etching out a porous layer. All suitable micromechanical manufacturing processes, in particular also future manufacturing processes, can be used for this.
  • FIG. 1 is a schematic sectional view of a first embodiment of the invention
  • FIG. 2 a representation corresponding to FIG. 1 of a second embodiment variant
  • FIG. 3 shows a corresponding representation of a third embodiment variant
  • Fig. 4 shows another embodiment of the invention in monolithic construction
  • Fig. 5 shows a special embodiment with a so-called lens array.
  • the device 1 according to FIG. 1 comprises a mounting plate 2, on which a substrate (10) with a detector structure 3 is built.
  • the detector structure 3 is shown in simplified form and can contain, for example, a large number of thermopile sensors.
  • a protective housing 4 covers the detector structure 3 and protects it from disruptive environmental influences, for example from contamination.
  • a micromechanical lens 5 is enclosed as a protective window in the protective housing 4 above the detector structure 3. In this way, an imaging method can be carried out with the device 1.
  • the imaging properties through the lens 5 are indicated schematically by two beam paths 6.
  • a separate lens can be dispensed with, as a result of which a costly adjustment can also be dispensed with in addition to the cost of materials.
  • a micromechanical lens 5 according to the exemplary embodiment can be inexpensively manufactured in large numbers.
  • FIG. 2 again shows a device 1 according to the invention, the micromechanical lens 5 being connected to the substrate 10 of the detector structure 3 via a spacer 7 without a protective housing.
  • a cavern 8 is shown below the detector structure 3 in this figure, as a result of which the substrate 2 forms a thin membrane 9 in the region of the detector structure 3.
  • the thin membrane 9 prevents the drains from flowing too quickly heat generated by the incoming radiation. This heat is detected by thermopile elements.
  • the sensitivity of the device 1 is thus improved by limiting the heat diffusion through the thin design of the membrane 9.
  • the formation according to FIG. 2 can already be produced in terms of production technology in such a way that the adjustment between the lens 5 and the substrate 2 is carried out simultaneously for a large number of components each present on a wafer. After the connection between the lens 5 and the substrate 2 has been established via the spacers 7, the separation can then take place, with each sensor device 1 being equally well adjusted.
  • the membrane 9 of the detector structure 3 is already connected directly to the substrate 10 of the micromechanical lens 5.
  • the micromechanical lens 5 is designed as a curvature on the substrate 10, while the membrane 9 is attached to the back of the substrate 10.
  • the membrane 9 with the detector structure 3 can, for example, be constructed separately and then connected to the substrate 10 of the lens 5, for example by bonding or gluing.
  • the embodiment according to FIG. 2 enables adjustment and connection at the same time for a large number of components by joining two wafers together before the individual sensors 1 are separated.
  • the embodiment according to FIG. 3 represents the smallest design for a device according to the invention under the described exemplary embodiments.
  • the entire device 1 is built up monolithically on a substrate using micromechanical production methods.
  • the cavern 8 is in the embodiment according to FIG. 3 between the Rear side of the lens 5 and the membrane 9.
  • this cavern must be formed after the membrane has been produced. This can be done by etching, for example anisotropic etching or etching on a porous layer provided for this purpose, a so-called sacrificial layer.
  • etching for example anisotropic etching or etching on a porous layer provided for this purpose, a so-called sacrificial layer.
  • FIG. 4 shows an embodiment in monolithic construction comparable to the aforementioned example, the cavern 8 being mounted inside the substrate 10, so that the membrane 9 and the detector structure 3 are located on the flat rear side of the substrate 10.
  • the detector structure 3 on the back of the membrane 9 is indicated, as would be provided in the case of a monolithic construction. In this case, care must be taken that the membrane 9 is transparent to the radiation 6 to be detected.
  • silicon in the case of an infrared sensor, for example, the use of silicon as the substrate could be considered. Silicon would also be a suitable material, also for the aforementioned exemplary embodiments, both for the construction of the detector structure 3 as a substrate 10 and for the construction of the micromechanical lens 5. Silicon is a comparatively inexpensive semiconductor and thus enables the device according to the invention to be manufactured at low cost.
  • FIG 5 shows an embodiment of a device according to the invention with a lens array 11 which comprises a plurality of lenses 12 lying next to one another.
  • the detector structure 3 comprises various detector elements 13 which lie on a membrane 9. In order to reduce the outflow of the heat to be detected by the detector elements 13, a cavern 8 was produced in the substrate 10.
  • the micromechanical lens array 11 is rigidly connected to the detector structure 3 via spacers 7 and the intermediate supports 14 surrounding the detector elements 13, the intermediate walls 15 of the intermediate supports 14 being designed to be impermeable to infrared radiation in order to prevent the heat radiation from being coupled over to an adjacent detector element 13.
  • the schematically drawn optical axes 16 of the individual lenses 12 of the lens array 11 are inclined towards one another in order to image different solid angle ranges on the detector elements.
  • the intermediate carriers 14 are preferably honeycomb-shaped, so that they can be constructed side by side without any gaps.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

L'invention concerne un dispositif (1) pour la détection d'un rayonnement électromagnétique, avec résolution locale, pour la mise en oeuvre d'un procédé de formation d'image. Ce dispositif peut être fabriqué et monté à faible coût. Selon l'invention, on obtient un tel dispositif grâce au fait qu'on utilise un système d'imagerie optique (5) pouvant être produit par micromécanique.
EP99939957A 1998-06-30 1999-06-26 Dispositif pour la detection d'un rayonnement electromagnetique Withdrawn EP1097483A2 (fr)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE19829027 1998-06-30
DE19829027 1998-06-30
DE19923606A DE19923606A1 (de) 1998-06-30 1999-05-25 Vorrichtung zur Erfassung elektromagnetischer Strahlung
DE19923606 1999-05-25
PCT/DE1999/001869 WO2000002254A2 (fr) 1998-06-30 1999-06-26 Dispositif pour la detection d'un rayonnement electromagnetique

Publications (1)

Publication Number Publication Date
EP1097483A2 true EP1097483A2 (fr) 2001-05-09

Family

ID=26047110

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99939957A Withdrawn EP1097483A2 (fr) 1998-06-30 1999-06-26 Dispositif pour la detection d'un rayonnement electromagnetique

Country Status (5)

Country Link
US (1) US6710348B1 (fr)
EP (1) EP1097483A2 (fr)
JP (1) JP2002520819A (fr)
CN (1) CN1258820C (fr)
WO (1) WO2000002254A2 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004001425A1 (de) * 2004-01-09 2005-08-04 Robert Bosch Gmbh Optische Sensorvorrichtung mit zumindest teilweise in das Gerätegehäuse integrierter Optik
DE102004027512A1 (de) 2004-06-04 2005-12-22 Robert Bosch Gmbh Spektroskopischer Gassensor, insbesondere zum Nachweis mindestens einer Gaskomponente in der Umluft, und Verfahren zur Herstellung eines derartigen spektroskopischen Gassensors
FR2875299B1 (fr) * 2004-09-10 2006-11-17 Ulis Soc Par Actions Simplifie Composant de detection de rayonnements electromagnetiques
US7842922B2 (en) * 2005-05-17 2010-11-30 Heimann Sensor Gmbh Thermopile infrared sensor array
JP2008047587A (ja) * 2006-08-11 2008-02-28 Sumitomo Electric Ind Ltd 光検出装置
US9250126B2 (en) 2012-10-26 2016-02-02 Excelitas Technologies Singapore Pte. Ltd Optical sensing element arrangement with integral package
DE102015217290A1 (de) * 2015-09-10 2017-03-16 Robert Bosch Gmbh Mikroelektronische Anordnung und entsprechendes Herstellungsverfahren für eine mikroelektronische Anordnung
KR102214389B1 (ko) * 2016-06-21 2021-02-08 하이만 센서 게엠베하 온도를 측정하거나 가스를 검출하기 위한 서모파일 적외선 개별 센서

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105965U (fr) * 1979-01-19 1980-07-24
JPS587887A (ja) * 1981-07-06 1983-01-17 Fujitsu Ltd 光半導体装置
US4695719A (en) * 1983-12-05 1987-09-22 Honeywell Inc. Apparatus and method for opto-electronic package
FR2577073B1 (fr) * 1985-02-06 1987-09-25 Commissariat Energie Atomique Dispositif matriciel de detection d'un rayonnement lumineux a ecrans froids individuels integres dans un substrat et son procede de fabrication
US5401968A (en) * 1989-12-29 1995-03-28 Honeywell Inc. Binary optical microlens detector array
DE4221037C2 (de) * 1992-06-26 1998-07-02 Heimann Optoelectronics Gmbh Thermischer Strahlungssensor
DE4301456C1 (de) * 1993-01-20 1994-06-23 Ant Nachrichtentech Anordnung zur Ankopplung eines Lichtwellenleiters
DE19508222C1 (de) * 1995-03-08 1996-06-05 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
JPH10115556A (ja) * 1996-10-11 1998-05-06 Mitsubishi Electric Corp 赤外線検出器
DE29605813U1 (de) * 1996-03-28 1996-06-05 Heimann Optoelectronics Gmbh, 65199 Wiesbaden Optikbaugruppe für Infrarotsensoren
DE19616969A1 (de) * 1996-04-27 1997-10-30 Bosch Gmbh Robert Optische Baugruppe zur Ankopplung eines Lichtwellenleiters und Verfahren zur Herstellung derselben
DE19621124A1 (de) * 1996-05-24 1997-11-27 Siemens Ag Optoelektronischer Wandler und dessen Herstellungsverfahren
US5936294A (en) * 1996-05-28 1999-08-10 Motorola, Inc. Optical semiconductor component and method of fabrication
JP3399495B2 (ja) * 1996-07-08 2003-04-21 ソニー株式会社 固体撮像装置とその製造方法
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO0002254A2 *

Also Published As

Publication number Publication date
CN1258820C (zh) 2006-06-07
US6710348B1 (en) 2004-03-23
CN1317153A (zh) 2001-10-10
JP2002520819A (ja) 2002-07-09
WO2000002254A3 (fr) 2000-04-20
WO2000002254A2 (fr) 2000-01-13

Similar Documents

Publication Publication Date Title
DE69508252T2 (de) Optischer hochpass-filter
DE69933703T2 (de) Resonierender sensor
EP1122791B1 (fr) Système d'imagerie opto-électronique adapté à la curvature de plan focal et méthode de procédé.
DE3881385T2 (de) Keilfilterspektrometer.
EP1515161B1 (fr) Télémètre et procédé correspondant
DE69530225T2 (de) Mikro-detektor mit fabry-perot-filter
DE69632228T2 (de) Bildsensor mit einem Trägergehäuse
DE102011108923B3 (de) Drei-Spiegel-Anastigmat mit mindestens einem nicht-rotationssymmetrischen Spiegel
DE69312062T2 (de) Abbildendes system
EP2000373A2 (fr) Dispositif de capteur optique destiné à déterminer une mise en réseau
DE102014014983A1 (de) Optisches Filterelement für spektroskopische Einrichtungen zur Umwandlung von spektralen Informationen in Ortsinformationen
WO2000002254A2 (fr) Dispositif pour la detection d'un rayonnement electromagnetique
WO2019141644A1 (fr) Dispositif de de détection pour la détection de salissures
DE60316114T2 (de) Rekonfigurierbare detektoranordnung
EP2537011B1 (fr) Spectromètre compensé en température
EP2502036B1 (fr) Dispositif capteur optique pour la détection de lumière ambiante dans des véhicules à moteur
EP1377869A2 (fr) Dispositif pour la deviation de rayons optiques
DE19923606A1 (de) Vorrichtung zur Erfassung elektromagnetischer Strahlung
WO2012004379A1 (fr) Filtre de fabry-pérot accordable et procédé pour la fabrication dudit filtre de fabry-pérot
DE102015222961A1 (de) Infrarotsensor und Infrarotsensorfeld
DE112020003194T5 (de) Lichtempfangsvorrichtung
WO2007098788A1 (fr) Sonde de force
WO1992010819A1 (fr) Detecteur de mouvement a infrarouge passif
DE102012021736A1 (de) Bildsensor für sichtbares und infrarotes Licht und Kamerasystem
DE102018221522A1 (de) Spektrometervorrichtung und Verfahren zum Herstellen einer Spektrometervorrichtung

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20010130

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): DE ES FR GB IT SE

17Q First examination report despatched

Effective date: 20071121

RAP1 Party data changed (applicant data changed or rights of an application transferred)

Owner name: ROBERT BOSCH GMBH

Owner name: EXCELITAS TECHNOLOGIES SINGAPORE PTE LTD.

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20170103