DK92178A - Fremgangsmaade til fremstilling af siliciumstave med ensartet tvaersnit - Google Patents
Fremgangsmaade til fremstilling af siliciumstave med ensartet tvaersnitInfo
- Publication number
- DK92178A DK92178A DK92178A DK92178A DK92178A DK 92178 A DK92178 A DK 92178A DK 92178 A DK92178 A DK 92178A DK 92178 A DK92178 A DK 92178A DK 92178 A DK92178 A DK 92178A
- Authority
- DK
- Denmark
- Prior art keywords
- procedure
- manufacture
- section
- uniform cross
- silicon bars
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2221277 | 1977-03-03 | ||
JP2221277A JPS53108029A (en) | 1977-03-03 | 1977-03-03 | Method of making high purity silicon having uniform shape |
Publications (3)
Publication Number | Publication Date |
---|---|
DK92178A true DK92178A (da) | 1978-09-04 |
DK153223B DK153223B (da) | 1988-06-27 |
DK153223C DK153223C (da) | 1988-11-07 |
Family
ID=12076485
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK092178A DK153223C (da) | 1977-03-03 | 1978-03-01 | Fremgangsmaade og apparat til fremstilling af siliciumstave med ensartet tvaersnit |
Country Status (5)
Country | Link |
---|---|
US (1) | US4147814A (da) |
JP (1) | JPS53108029A (da) |
CA (1) | CA1098011A (da) |
DE (1) | DE2808461C2 (da) |
DK (1) | DK153223C (da) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4259278A (en) * | 1979-07-09 | 1981-03-31 | Ultra Carbon Corporation | Method of reshaping warped graphite enclosures and the like |
US4309241A (en) * | 1980-07-28 | 1982-01-05 | Monsanto Company | Gas curtain continuous chemical vapor deposition production of semiconductor bodies |
US4464222A (en) * | 1980-07-28 | 1984-08-07 | Monsanto Company | Process for increasing silicon thermal decomposition deposition rates from silicon halide-hydrogen reaction gases |
US4559219A (en) * | 1984-04-02 | 1985-12-17 | General Electric Company | Reducing powder formation in the production of high-purity silicon |
FR2572312B1 (fr) * | 1984-10-30 | 1989-01-20 | Rhone Poulenc Spec Chim | Procede de fabrication de barreaux de silicium ultra-pur |
US4724160A (en) * | 1986-07-28 | 1988-02-09 | Dow Corning Corporation | Process for the production of semiconductor materials |
US4826668A (en) * | 1987-06-11 | 1989-05-02 | Union Carbide Corporation | Process for the production of ultra high purity polycrystalline silicon |
US4805556A (en) * | 1988-01-15 | 1989-02-21 | Union Carbide Corporation | Reactor system and method for forming uniformly large-diameter polycrystalline rods by the pyrolysis of silane |
KR950013069B1 (ko) * | 1989-12-26 | 1995-10-24 | 어드밴스드 실리콘 머티어리얼즈 인코포레이티드 | 수소 침투 방지용 외부 코팅층을 갖는 흑연 척 및 탄소가 거의 없는 다결정 실리콘 제조 방법 |
US5478396A (en) * | 1992-09-28 | 1995-12-26 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5382419A (en) * | 1992-09-28 | 1995-01-17 | Advanced Silicon Materials, Inc. | Production of high-purity polycrystalline silicon rod for semiconductor applications |
US5894887A (en) * | 1995-11-30 | 1999-04-20 | Applied Materials, Inc. | Ceramic dome temperature control using heat pipe structure and method |
DE19608885B4 (de) * | 1996-03-07 | 2006-11-16 | Wacker Chemie Ag | Verfahren und Vorrichtung zum Aufheizen von Trägerkörpern |
WO1999031013A1 (en) * | 1997-12-15 | 1999-06-24 | Advanced Silicon Materials, Inc. | Chemical vapor deposition system for polycrystalline silicon rod production |
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US6623801B2 (en) | 2001-07-30 | 2003-09-23 | Komatsu Ltd. | Method of producing high-purity polycrystalline silicon |
US6503563B1 (en) * | 2001-10-09 | 2003-01-07 | Komatsu Ltd. | Method of producing polycrystalline silicon for semiconductors from saline gas |
CN100423856C (zh) * | 2003-08-20 | 2008-10-08 | 中国第一汽车集团公司 | 一种提高内花键尼龙润滑涂层粘结强度的方法 |
CN100387362C (zh) * | 2006-06-28 | 2008-05-14 | 蔡国华 | 用聚醚醚酮粉末喷涂金属制品表面的方法 |
JP5119856B2 (ja) * | 2006-11-29 | 2013-01-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置 |
WO2009120862A2 (en) * | 2008-03-26 | 2009-10-01 | Gt Solar, Inc. | Systems and methods for distributing gas in a chemical vapor deposition reactor |
US20110036292A1 (en) * | 2008-04-14 | 2011-02-17 | Max Dehtiar | Manufacturing Apparatus For Depositing A Material And An Electrode For Use Therein |
US8951352B2 (en) * | 2008-04-14 | 2015-02-10 | Hemlock Semiconductor Corporation | Manufacturing apparatus for depositing a material and an electrode for use therein |
EP2266368B1 (en) * | 2008-04-14 | 2018-03-28 | Hemlock Semiconductor Operations LLC | Manufacturing apparatus for depositing a material on an electrode for use therein |
CN101476153B (zh) * | 2008-12-25 | 2011-12-07 | 青岛科技大学 | 多晶硅的还原生产工艺及其生产用还原炉 |
DE102009003368B3 (de) * | 2009-01-22 | 2010-03-25 | G+R Polysilicon Gmbh | Reaktor zur Herstellung von polykristallinem Silizium nach dem Monosilan-Prozess |
CN102300808B (zh) * | 2009-02-27 | 2013-08-21 | 株式会社德山 | 多晶硅棒及其制造装置 |
US8540818B2 (en) * | 2009-04-28 | 2013-09-24 | Mitsubishi Materials Corporation | Polycrystalline silicon reactor |
US8507051B2 (en) * | 2009-07-15 | 2013-08-13 | Mitsubishi Materials Corporation | Polycrystalline silicon producing method |
WO2011116273A2 (en) * | 2010-03-19 | 2011-09-22 | Gt Solar Incorporated | System and method for polycrystalline silicon deposition |
US10494714B2 (en) | 2011-01-03 | 2019-12-03 | Oci Company Ltd. | Chuck for chemical vapor deposition systems and related methods therefor |
DE102011080866A1 (de) | 2011-08-12 | 2013-02-14 | Wacker Chemie Ag | Verfahren zur Herstellung eines einkristallinen Stabes aus Silicium |
DE102013204730A1 (de) * | 2013-03-18 | 2014-09-18 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
JP6345108B2 (ja) | 2014-12-25 | 2018-06-20 | 信越化学工業株式会社 | 多結晶シリコン棒、多結晶シリコン棒の加工方法、多結晶シリコン棒の結晶評価方法、および、fz単結晶シリコンの製造方法 |
DE102015209008A1 (de) * | 2015-05-15 | 2016-11-17 | Schmid Silicon Technology Gmbh | Verfahren und Anlage zur Zersetzung von Monosilan |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
DE1061593B (de) * | 1956-06-25 | 1959-07-16 | Siemens Ag | Vorrichtung zur Gewinnung reinsten Halbleitermaterials fuer elektrotechnische Zwecke |
NL251143A (da) * | 1959-05-04 | |||
NL256017A (da) * | 1959-09-23 | 1900-01-01 | ||
NL256255A (da) * | 1959-11-02 | |||
US3941906A (en) * | 1973-03-01 | 1976-03-02 | Theodore Bostroem | Hot dip metallizing process |
-
1977
- 1977-03-03 JP JP2221277A patent/JPS53108029A/ja active Granted
-
1978
- 1978-02-28 DE DE2808461A patent/DE2808461C2/de not_active Expired
- 1978-03-01 DK DK092178A patent/DK153223C/da not_active IP Right Cessation
- 1978-03-02 CA CA298,321A patent/CA1098011A/en not_active Expired
- 1978-03-02 US US05/882,819 patent/US4147814A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS5645851B2 (da) | 1981-10-29 |
DE2808461A1 (de) | 1978-09-07 |
DE2808461C2 (de) | 1982-05-06 |
JPS53108029A (en) | 1978-09-20 |
CA1098011A (en) | 1981-03-24 |
DK153223B (da) | 1988-06-27 |
DK153223C (da) | 1988-11-07 |
US4147814A (en) | 1979-04-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUP | Patent expired |