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DE69113733D1 - Verfahren zur Herstellung von hartem Bornitrid. - Google Patents

Verfahren zur Herstellung von hartem Bornitrid.

Info

Publication number
DE69113733D1
DE69113733D1 DE69113733T DE69113733T DE69113733D1 DE 69113733 D1 DE69113733 D1 DE 69113733D1 DE 69113733 T DE69113733 T DE 69113733T DE 69113733 T DE69113733 T DE 69113733T DE 69113733 D1 DE69113733 D1 DE 69113733D1
Authority
DE
Germany
Prior art keywords
production
boron nitride
hard boron
hard
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69113733T
Other languages
English (en)
Other versions
DE69113733T2 (de
Inventor
Tadashi Tomikawa
Nobuhiko Fujita
Shyoji Nakagama
Akira Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69113733D1 publication Critical patent/DE69113733D1/de
Publication of DE69113733T2 publication Critical patent/DE69113733T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0647—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/342—Boron nitride

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69113733T 1990-08-10 1991-08-09 Verfahren zur Herstellung von hartem Bornitrid. Expired - Fee Related DE69113733T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21021490 1990-08-10
JP3123611A JPH04228572A (ja) 1990-08-10 1991-05-28 硬質窒化ホウ素合成法

Publications (2)

Publication Number Publication Date
DE69113733D1 true DE69113733D1 (de) 1995-11-16
DE69113733T2 DE69113733T2 (de) 1996-04-11

Family

ID=26460491

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113733T Expired - Fee Related DE69113733T2 (de) 1990-08-10 1991-08-09 Verfahren zur Herstellung von hartem Bornitrid.

Country Status (4)

Country Link
US (1) US5316804A (de)
EP (1) EP0476825B1 (de)
JP (1) JPH04228572A (de)
DE (1) DE69113733T2 (de)

Families Citing this family (87)

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US5897751A (en) * 1991-03-11 1999-04-27 Regents Of The University Of California Method of fabricating boron containing coatings
US5483920A (en) * 1993-08-05 1996-01-16 Board Of Governors Of Wayne State University Method of forming cubic boron nitride films
US5518780A (en) * 1994-06-16 1996-05-21 Ford Motor Company Method of making hard, transparent amorphous hydrogenated boron nitride films
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマｃｖｄ法及び装置
US5948541A (en) * 1996-04-04 1999-09-07 Kennametal Inc. Boron and nitrogen containing coating and method for making
US5976716A (en) * 1996-04-04 1999-11-02 Kennametal Inc. Substrate with a superhard coating containing boron and nitrogen and method of making the same
DE19714014A1 (de) * 1997-04-04 1998-10-08 Max Planck Gesellschaft Herstellung dünner Schichten aus kubischem Bornitrid
US6572933B1 (en) * 1997-09-24 2003-06-03 The Regents Of The University Of California Forming adherent coatings using plasma processing
US6153061A (en) * 1998-03-02 2000-11-28 Auburn University Method of synthesizing cubic boron nitride films
DE19827803A1 (de) * 1998-06-23 1999-12-30 Bortec Gmbh Verfahren zur Herstellung von Bornitridschichten auf metallischen und nichtmetallischen Werkstoffoberflächen und Schneidwerkzeugen
US6593015B1 (en) 1999-11-18 2003-07-15 Kennametal Pc Inc. Tool with a hard coating containing an aluminum-nitrogen compound and a boron-nitrogen compound and method of making the same
JP3605634B2 (ja) * 1999-12-27 2004-12-22 独立行政法人物質・材料研究機構 立方晶窒化ホウ素の気相合成法
US6383465B1 (en) * 1999-12-27 2002-05-07 National Institute For Research In Inorganic Materials Cubic boron nitride and its gas phase synthesis method
JP4764559B2 (ja) * 2001-03-28 2011-09-07 隆 杉野 成膜方法及び成膜装置
JP5013353B2 (ja) * 2001-03-28 2012-08-29 隆 杉野 成膜方法及び成膜装置
JP4674353B2 (ja) * 2005-10-07 2011-04-20 独立行政法人物質・材料研究機構 フッ素原子が導入された窒化ホウ素ナノチューブ及びその製造方法
JP4827061B2 (ja) * 2007-03-12 2011-11-30 独立行政法人物質・材料研究機構 立方晶窒化ホウ素の製造方法
DE202008009607U1 (de) * 2008-07-17 2008-09-11 Burgmann Industries Gmbh & Co. Kg Gleitringdichtungsanordnung
US8563090B2 (en) * 2008-10-16 2013-10-22 Applied Materials, Inc. Boron film interface engineering
US7910491B2 (en) * 2008-10-16 2011-03-22 Applied Materials, Inc. Gapfill improvement with low etch rate dielectric liners
US9324576B2 (en) 2010-05-27 2016-04-26 Applied Materials, Inc. Selective etch for silicon films
CN103026473A (zh) * 2010-07-21 2013-04-03 东京毅力科创株式会社 层间绝缘层形成方法和半导体装置
US8741778B2 (en) 2010-12-14 2014-06-03 Applied Materials, Inc. Uniform dry etch in two stages
US8771539B2 (en) 2011-02-22 2014-07-08 Applied Materials, Inc. Remotely-excited fluorine and water vapor etch
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US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
US8771536B2 (en) 2011-08-01 2014-07-08 Applied Materials, Inc. Dry-etch for silicon-and-carbon-containing films
US8679982B2 (en) 2011-08-26 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and oxygen
US8679983B2 (en) 2011-09-01 2014-03-25 Applied Materials, Inc. Selective suppression of dry-etch rate of materials containing both silicon and nitrogen
US8927390B2 (en) 2011-09-26 2015-01-06 Applied Materials, Inc. Intrench profile
US8808563B2 (en) 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
WO2013070436A1 (en) 2011-11-08 2013-05-16 Applied Materials, Inc. Methods of reducing substrate dislocation during gapfill processing
US9373517B2 (en) 2012-08-02 2016-06-21 Applied Materials, Inc. Semiconductor processing with DC assisted RF power for improved control
US9034770B2 (en) 2012-09-17 2015-05-19 Applied Materials, Inc. Differential silicon oxide etch
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US9390937B2 (en) 2012-09-20 2016-07-12 Applied Materials, Inc. Silicon-carbon-nitride selective etch
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US8765574B2 (en) 2012-11-09 2014-07-01 Applied Materials, Inc. Dry etch process
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US9064816B2 (en) 2012-11-30 2015-06-23 Applied Materials, Inc. Dry-etch for selective oxidation removal
US8980763B2 (en) 2012-11-30 2015-03-17 Applied Materials, Inc. Dry-etch for selective tungsten removal
US9111877B2 (en) 2012-12-18 2015-08-18 Applied Materials, Inc. Non-local plasma oxide etch
US8921234B2 (en) 2012-12-21 2014-12-30 Applied Materials, Inc. Selective titanium nitride etching
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
US9040422B2 (en) 2013-03-05 2015-05-26 Applied Materials, Inc. Selective titanium nitride removal
US8801952B1 (en) 2013-03-07 2014-08-12 Applied Materials, Inc. Conformal oxide dry etch
US10170282B2 (en) 2013-03-08 2019-01-01 Applied Materials, Inc. Insulated semiconductor faceplate designs
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US8895449B1 (en) 2013-05-16 2014-11-25 Applied Materials, Inc. Delicate dry clean
US9114438B2 (en) 2013-05-21 2015-08-25 Applied Materials, Inc. Copper residue chamber clean
US9493879B2 (en) 2013-07-12 2016-11-15 Applied Materials, Inc. Selective sputtering for pattern transfer
US9773648B2 (en) 2013-08-30 2017-09-26 Applied Materials, Inc. Dual discharge modes operation for remote plasma
US8956980B1 (en) 2013-09-16 2015-02-17 Applied Materials, Inc. Selective etch of silicon nitride
US8951429B1 (en) 2013-10-29 2015-02-10 Applied Materials, Inc. Tungsten oxide processing
US9236265B2 (en) 2013-11-04 2016-01-12 Applied Materials, Inc. Silicon germanium processing
US9576809B2 (en) 2013-11-04 2017-02-21 Applied Materials, Inc. Etch suppression with germanium
US9520303B2 (en) 2013-11-12 2016-12-13 Applied Materials, Inc. Aluminum selective etch
US9245762B2 (en) 2013-12-02 2016-01-26 Applied Materials, Inc. Procedure for etch rate consistency
US9117855B2 (en) 2013-12-04 2015-08-25 Applied Materials, Inc. Polarity control for remote plasma
US9287095B2 (en) 2013-12-17 2016-03-15 Applied Materials, Inc. Semiconductor system assemblies and methods of operation
US9263278B2 (en) 2013-12-17 2016-02-16 Applied Materials, Inc. Dopant etch selectivity control
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
US9287134B2 (en) 2014-01-17 2016-03-15 Applied Materials, Inc. Titanium oxide etch
US9396989B2 (en) 2014-01-27 2016-07-19 Applied Materials, Inc. Air gaps between copper lines
US9293568B2 (en) 2014-01-27 2016-03-22 Applied Materials, Inc. Method of fin patterning
US9385028B2 (en) 2014-02-03 2016-07-05 Applied Materials, Inc. Air gap process
US9299575B2 (en) 2014-03-17 2016-03-29 Applied Materials, Inc. Gas-phase tungsten etch
US9299538B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9299537B2 (en) 2014-03-20 2016-03-29 Applied Materials, Inc. Radial waveguide systems and methods for post-match control of microwaves
US9136273B1 (en) 2014-03-21 2015-09-15 Applied Materials, Inc. Flash gate air gap
US9903020B2 (en) 2014-03-31 2018-02-27 Applied Materials, Inc. Generation of compact alumina passivation layers on aluminum plasma equipment components
US9309598B2 (en) 2014-05-28 2016-04-12 Applied Materials, Inc. Oxide and metal removal
US9847289B2 (en) 2014-05-30 2017-12-19 Applied Materials, Inc. Protective via cap for improved interconnect performance
US9378969B2 (en) 2014-06-19 2016-06-28 Applied Materials, Inc. Low temperature gas-phase carbon removal
US9406523B2 (en) 2014-06-19 2016-08-02 Applied Materials, Inc. Highly selective doped oxide removal method
US9425058B2 (en) 2014-07-24 2016-08-23 Applied Materials, Inc. Simplified litho-etch-litho-etch process
US9496167B2 (en) 2014-07-31 2016-11-15 Applied Materials, Inc. Integrated bit-line airgap formation and gate stack post clean
US9378978B2 (en) 2014-07-31 2016-06-28 Applied Materials, Inc. Integrated oxide recess and floating gate fin trimming
US9159606B1 (en) 2014-07-31 2015-10-13 Applied Materials, Inc. Metal air gap
US9165786B1 (en) 2014-08-05 2015-10-20 Applied Materials, Inc. Integrated oxide and nitride recess for better channel contact in 3D architectures
US9659753B2 (en) 2014-08-07 2017-05-23 Applied Materials, Inc. Grooved insulator to reduce leakage current
US9553102B2 (en) 2014-08-19 2017-01-24 Applied Materials, Inc. Tungsten separation
US9355856B2 (en) 2014-09-12 2016-05-31 Applied Materials, Inc. V trench dry etch
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
US11646216B2 (en) * 2020-10-16 2023-05-09 Applied Materials, Inc. Systems and methods of seasoning electrostatic chucks with dielectric seasoning films

Family Cites Families (7)

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Publication number Priority date Publication date Assignee Title
US4412899A (en) * 1983-02-07 1983-11-01 Applied Coatings International, Inc. Cubic boron nitride preparation utilizing nitrogen gas
DE3463641D1 (en) * 1983-11-11 1987-06-19 Japan Res Dev Corp Boron nitride containing titanium nitride, method of producing the same and composite ceramics produced therefrom
JPS6221778A (ja) * 1985-07-17 1987-01-30 東芝タンガロイ株式会社 立方晶窒化ホウ素被覆体及びその製造方法
US4683043A (en) * 1986-01-21 1987-07-28 Battelle Development Corporation Cubic boron nitride preparation
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
US5004708A (en) * 1989-03-02 1991-04-02 Union Carbide Corporation Pyrolytic boron nitride with columnar crystalline morphology
US5096740A (en) * 1990-01-23 1992-03-17 Sumitomo Electric Industries, Ltd. Production of cubic boron nitride films by laser deposition

Also Published As

Publication number Publication date
DE69113733T2 (de) 1996-04-11
US5316804A (en) 1994-05-31
EP0476825B1 (de) 1995-10-11
EP0476825A1 (de) 1992-03-25
JPH04228572A (ja) 1992-08-18

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Legal Events

Date Code Title Description
8381 Inventor (new situation)

Free format text: TOMIKAWA, TADASHI,C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO-KEN, JP FUJITA, NOBUHIKO, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO-KEN, JP NAKAGAMA, SHYOJI, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO-KEN, JP NAKAYAMA, AKIRA, C/O ITAMI WORKS OF SUMITOMO, ITAMI-SHI, HYOGO-KEN, JP

8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee