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DE69802557D1 - Verfahren und vorrichtung zur steuerung der züchtung eines siliciumkristalles - Google Patents

Verfahren und vorrichtung zur steuerung der züchtung eines siliciumkristalles

Info

Publication number
DE69802557D1
DE69802557D1 DE69802557T DE69802557T DE69802557D1 DE 69802557 D1 DE69802557 D1 DE 69802557D1 DE 69802557 T DE69802557 T DE 69802557T DE 69802557 T DE69802557 T DE 69802557T DE 69802557 D1 DE69802557 D1 DE 69802557D1
Authority
DE
Germany
Prior art keywords
breeding
controlling
silicon crystal
silicon
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802557T
Other languages
English (en)
Other versions
DE69802557T2 (de
Inventor
H Fuerhoff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE69802557D1 publication Critical patent/DE69802557D1/de
Application granted granted Critical
Publication of DE69802557T2 publication Critical patent/DE69802557T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69802557T 1997-09-30 1998-09-29 Verfahren und vorrichtung zur steuerung der züchtung eines siliciumkristalles Expired - Lifetime DE69802557T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/939,802 US5882402A (en) 1997-09-30 1997-09-30 Method for controlling growth of a silicon crystal
PCT/US1998/020240 WO1999016940A1 (en) 1997-09-30 1998-09-29 Method and system for controlling growth of a silicon crystal

Publications (2)

Publication Number Publication Date
DE69802557D1 true DE69802557D1 (de) 2001-12-20
DE69802557T2 DE69802557T2 (de) 2002-05-23

Family

ID=25473759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802557T Expired - Lifetime DE69802557T2 (de) 1997-09-30 1998-09-29 Verfahren und vorrichtung zur steuerung der züchtung eines siliciumkristalles

Country Status (8)

Country Link
US (1) US5882402A (de)
EP (1) EP1019567B1 (de)
JP (1) JP4253123B2 (de)
KR (1) KR20010015645A (de)
CN (1) CN1205361C (de)
DE (1) DE69802557T2 (de)
MY (1) MY117326A (de)
WO (1) WO1999016940A1 (de)

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US6203611B1 (en) 1999-10-19 2001-03-20 Memc Electronic Materials, Inc. Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
TW546423B (en) * 2000-05-01 2003-08-11 Komatsu Denshi Kinzoku Kk Method and apparatus for measuring melt level
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US6570663B1 (en) * 2000-07-07 2003-05-27 Seh America, Inc. Calibration method and device for visual measuring systems
US6454851B1 (en) 2000-11-09 2002-09-24 Memc Electronic Materials, Inc. Method for preparing molten silicon melt from polycrystalline silicon charge
US20040164461A1 (en) * 2002-11-11 2004-08-26 Ahmad Syed Sajid Programmed material consolidation systems including multiple fabrication sites and associated methods
US6960254B2 (en) * 2003-07-21 2005-11-01 Memc Electronic Materials, Inc. Method to monitor and control the crystal cooling or quenching rate by measuring crystal surface temperature
US20060005761A1 (en) * 2004-06-07 2006-01-12 Memc Electronic Materials, Inc. Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
JP4923452B2 (ja) * 2004-08-27 2012-04-25 株式会社デンソー ＳｉＣ単結晶の製造方法
US7291221B2 (en) * 2004-12-30 2007-11-06 Memc Electronic Materials, Inc. Electromagnetic pumping of liquid silicon in a crystal growing process
US7223304B2 (en) * 2004-12-30 2007-05-29 Memc Electronic Materials, Inc. Controlling melt-solid interface shape of a growing silicon crystal using a variable magnetic field
US7384480B2 (en) * 2005-06-20 2008-06-10 Sumco Corporation Apparatus for manufacturing semiconductor single crystal
JP4862290B2 (ja) * 2005-06-20 2012-01-25 株式会社Ｓｕｍｃｏ シリコン単結晶製造方法
JP4734139B2 (ja) 2006-02-27 2011-07-27 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 位置測定方法
CN100383295C (zh) * 2006-03-31 2008-04-23 浙江大学 直拉式晶体生长炉自动控制方法
US8221545B2 (en) * 2008-07-31 2012-07-17 Sumco Phoenix Corporation Procedure for in-situ determination of thermal gradients at the crystal growth front
US8012255B2 (en) * 2008-07-31 2011-09-06 Sumco Phoenix Corporation Method and apparatus for controlling diameter of a silicon crystal ingot in a growth process
US20100024717A1 (en) * 2008-07-31 2010-02-04 Benno Orschel Reversed action diameter control in a semiconductor crystal growth system
CN101748478B (zh) * 2008-12-15 2013-07-31 有研半导体材料股份有限公司 一种测量坩埚中硅熔体水平面相对高度的方法
US8545623B2 (en) * 2009-06-18 2013-10-01 Sumco Phoenix Corporation Method and apparatus for controlling the growth process of a monocrystalline silicon ingot
DE102010026488A1 (de) * 2010-07-07 2012-01-12 Pva Tepla Ag Verfahren zur Messung und Regelung der Höhe der Schmelzenoberfläche in einer Anlage zum Ziehen von Kristallen, sowie eine nach diesem Verfahren arbeitende Anlage
CN103403233B (zh) * 2010-12-30 2016-01-20 Memc电子材料有限公司 使用多个相机测量晶体生长特征
CN103215641B (zh) * 2013-04-10 2016-05-25 江苏双良新能源装备有限公司 一种泡生法蓝宝石视频引晶系统及其控制方法
CN103305905B (zh) * 2013-05-30 2015-08-05 浙江中晶科技股份有限公司 一种变埚比的单晶硅生长方法
JP6036709B2 (ja) * 2014-01-07 2016-11-30 信越半導体株式会社 シリコン単結晶の直径検出用カメラのカメラ位置の調整方法及びカメラ位置調整治具
JP6428372B2 (ja) * 2015-02-26 2018-11-28 株式会社Sumco 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法
JP6977619B2 (ja) * 2018-02-28 2021-12-08 株式会社Sumco シリコン単結晶の酸素濃度推定方法、およびシリコン単結晶の製造方法
CN108344742B (zh) * 2018-04-13 2020-06-05 太原理工大学 一种基于多帧图像运动信息的蓝宝石接种检测装置和方法
TWI770661B (zh) 2020-04-20 2022-07-11 日商Ｓｕｍｃｏ股份有限公司 單結晶製造裝置及單結晶的製造方法
CN113818075B (zh) * 2021-09-24 2022-09-30 西安奕斯伟材料科技有限公司 精准调整adc相机的方法、装置、设备及计算机存储介质
CN114399489B (zh) * 2022-01-12 2022-11-25 苏州天准科技股份有限公司 拉晶过程中光圈直径的监测方法、存储介质和终端
CN114688984B (zh) * 2022-01-12 2022-12-06 苏州天准科技股份有限公司 单双光圈的检测方法、存储介质、终端和拉晶设备
CN115491756B (zh) * 2022-11-18 2023-03-10 浙江晶盛机电股份有限公司 晶炉晶体生长调控方法、装置、计算机设备和存储介质

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Also Published As

Publication number Publication date
CN1272147A (zh) 2000-11-01
CN1205361C (zh) 2005-06-08
MY117326A (en) 2004-06-30
JP4253123B2 (ja) 2009-04-08
KR20010015645A (ko) 2001-02-26
JP2001518443A (ja) 2001-10-16
EP1019567B1 (de) 2001-11-14
WO1999016940A1 (en) 1999-04-08
DE69802557T2 (de) 2002-05-23
EP1019567A1 (de) 2000-07-19
US5882402A (en) 1999-03-16

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