DE69601424D1 - Verfahren und Vorrichtung zur Steuerung des Kristallwachstums - Google Patents

Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Info

Publication number: DE69601424D1
Authority: DE; Germany
Prior art keywords: crystal growth; controlling crystal; controlling; growth; crystal
Prior art date: 1996-06-27
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69601424T

Other languages

English (en)

Other versions

DE69601424T2 (de

Inventor

Erich Dornberger

Ammon Wilfried Von

Hans Oelkrug

Franz Wasmeier

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Siltronic AG

Original Assignee

Wacker Siltronic AG

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1996-06-27

Filing date

1996-06-27

Publication date

1999-03-04

1996-06-27 Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG

1999-03-04 Publication of DE69601424D1 publication Critical patent/DE69601424D1/de

1999-06-02 Application granted granted Critical

1999-06-02 Publication of DE69601424T2 publication Critical patent/DE69601424T2/de

2016-06-28 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)
Feedback Control In General (AREA)

DE69601424T 1996-06-27 1996-06-27 Verfahren und Vorrichtung zur Steuerung des Kristallwachstums Expired - Fee Related DE69601424T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
EP96110356A EP0821082B1 (de)	1996-06-27	1996-06-27	Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Publications (2)

Publication Number	Publication Date
DE69601424D1 true DE69601424D1 (de)	1999-03-04
DE69601424T2 DE69601424T2 (de)	1999-06-02

Family

ID=8222939

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69601424T Expired - Fee Related DE69601424T2 (de)	1996-06-27	1996-06-27	Verfahren und Vorrichtung zur Steuerung des Kristallwachstums

Country Status (7)

Country	Link
US (1)	US5868831A (de)
EP (1)	EP0821082B1 (de)
JP (1)	JP3097838B2 (de)
KR (1)	KR100206520B1 (de)
DE (1)	DE69601424T2 (de)
MY (1)	MY133688A (de)
SG (1)	SG50850A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3050290B2 (ja) *	1997-03-10	2000-06-12	日本電気株式会社	アモルファス化領域決定方法
DE19806949A1 (de) *	1998-02-19	1999-08-26	Leybold Systems Gmbh	Verfahren zum Steuern von Kristallzüchtungsprozessen
US6171391B1 (en) *	1998-10-14	2001-01-09	Memc Electronic Materials, Inc.	Method and system for controlling growth of a silicon crystal
US6776840B1 (en) *	1999-03-22	2004-08-17	Memc Electronic Materials, Inc.	Method and apparatus for controlling diameter of a silicon crystal in a locked seed lift growth process
CN1172029C (zh) *	1999-05-22	2004-10-20	科学技术振兴事业团	高质量单晶的制成方法及其装置
US6203611B1 (en) *	1999-10-19	2001-03-20	Memc Electronic Materials, Inc.	Method of controlling growth of a semiconductor crystal to automatically transition from taper growth to target diameter growth
US6760631B1 (en) *	2000-10-04	2004-07-06	General Electric Company	Multivariable control method and system without detailed prediction model
US7125450B2 (en) *	2002-11-12	2006-10-24	Memc Electronic Materials, Inc.	Process for preparing single crystal silicon using crucible rotation to control temperature gradient
JP4701738B2 (ja) *	2005-02-17	2011-06-15	株式会社Ｓｕｍｃｏ	単結晶の引上げ方法
US7959732B1 (en)	2005-06-17	2011-06-14	Saint-Gobain Ceramics & Plastics, Inc.	Apparatus and method for monitoring and controlling crystal growth
WO2007020706A1 (ja) *	2005-08-19	2007-02-22	Sumco Solar Corporation	シリコン電磁鋳造装置およびその操作方法
JP4919343B2 (ja) *	2007-02-06	2012-04-18	コバレントマテリアル株式会社	単結晶引上装置
KR100901343B1 (ko) *	2007-07-23	2009-06-05	(주)실리콘화일	결정질 반도체 박막 제조 방법
US20110098862A1 (en) *	2009-10-27	2011-04-28	ExxonMobil Research Engineering Company Law Department	Multi-stage processes and control thereof
KR101208285B1 (ko)	2010-03-08	2012-12-05	주식회사 엘지실트론	잉곳 성장 제어시스템 및 이를 포함하는 잉곳 성장장치
US20110245937A1 (en) *	2010-03-31	2011-10-06	General Electric Company	System and method for interoperability between carbon capture system, carbon emission system, carbon transport system, and carbon usage system
DE102012108009B4 (de) *	2012-08-30	2016-09-01	Topsil Semiconductor Materials A/S	Modellprädiktive Regelung des Zonenschmelz-Verfahrens
DE102013202155A1 (de) *	2013-02-08	2014-08-14	Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.	Verfahren zum Prüfen oder Identifizieren einer Modellstruktur
DE102016006453B4 (de)	2016-05-24	2021-09-02	Technische Universität Ilmenau	Verfahren zur automatischen Regelung eines Phasenumwandlungsvorganges und seine Verwendung
DE102016219605A1 (de) *	2016-10-10	2018-04-12	Siltronic Ag	Verfahren zum Ziehen eines Einkristalls aus Halbleitermaterial aus einer Schmelze, die in einem Tiegel enthalten ist
JP6604338B2 (ja) *	2017-01-05	2019-11-13	株式会社Ｓｕｍｃｏ	シリコン単結晶の引き上げ条件演算プログラム、シリコン単結晶のホットゾーンの改良方法、およびシリコン単結晶の育成方法
CN109680329A (zh) *	2018-07-26	2019-04-26	天津中环领先材料技术有限公司	基于熔区高度和晶体角度控制区熔晶体生长方法及系统
CN111235626A (zh) *	2019-10-30	2020-06-05	弘元新材料(包头)有限公司	一种提高cz单晶炉调温效率的调温方法
CN113344439B (zh) *	2021-06-29	2024-04-26	蓝思系统集成有限公司	一种晶体生长控制方法、装置、系统及可读存储介质
CN118028966A (zh) *	2024-02-22	2024-05-14	山东大学	一种用于生长晶体的智能晶体生长设备

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3621213A (en) *	1969-11-26	1971-11-16	Ibm	Programmed digital-computer-controlled system for automatic growth of semiconductor crystals
US3761692A (en) *	1971-10-01	1973-09-25	Texas Instruments Inc	Automated crystal pulling system
WO1983002464A1 (en) *	1982-01-04	1983-07-21	Seymour, Robert, Stephen	Diameter control in czochralski crystal growth
FR2621053A1 (fr) *	1987-09-29	1989-03-31	Commissariat Energie Atomique	Procede de commande d'une machine de tirage de monocristaux
US4943160A (en) *	1988-07-25	1990-07-24	Massachusetts Institute Of Technology	Interface angle estimation system
US4952780A (en) *	1988-10-31	1990-08-28	Grumman Aerospace Corporation	Computerized multi-zone crystal growth furnace
KR100237848B1 (ko) *	1991-04-26	2000-01-15	후루노 토모스케	단결정의 인상방법
DE4301072B4 (de) *	1993-01-16	2006-08-24	Crystal Growing Systems Gmbh	Verfahren zum Ziehen von Einkristallen aus einer Schmelze

1996
- 1996-06-27 DE DE69601424T patent/DE69601424T2/de not_active Expired - Fee Related
- 1996-06-27 EP EP96110356A patent/EP0821082B1/de not_active Expired - Lifetime
1997
- 1997-06-16 SG SG1997002104A patent/SG50850A1/en unknown
- 1997-06-19 US US08/878,915 patent/US5868831A/en not_active Expired - Fee Related
- 1997-06-25 MY MYPI97002877A patent/MY133688A/en unknown
- 1997-06-26 KR KR1019970027741A patent/KR100206520B1/ko not_active IP Right Cessation
- 1997-06-27 JP JP09172185A patent/JP3097838B2/ja not_active Expired - Fee Related

Also Published As

Publication number	Publication date
KR100206520B1 (ko)	1999-07-01
JP3097838B2 (ja)	2000-10-10
EP0821082A1 (de)	1998-01-28
SG50850A1 (en)	1998-07-20
KR980002311A (ko)	1998-03-30
DE69601424T2 (de)	1999-06-02
US5868831A (en)	1999-02-09
MY133688A (en)	2007-11-30
JPH1072300A (ja)	1998-03-17
EP0821082B1 (de)	1999-01-20

Publication	Publication Date	Title
DE69601424D1 (de)	1999-03-04	Verfahren und Vorrichtung zur Steuerung des Kristallwachstums
DE69630053D1 (de)	2003-10-23	Verfahren und Vorrichtung zur Steuerung des Flüssigkeitstransfers
DE69802557D1 (de)	2001-12-20	Verfahren und vorrichtung zur steuerung der züchtung eines siliciumkristalles
DE69511991D1 (de)	1999-10-14	Verfahren und Vorrichtung zur Steuerung von Mehrgrössen-/nichtlinearen Systemen
DE69738730D1 (de)	2008-07-10	Verfahren und vorrichtung zur körpertemperatursteuerung
DE69508045D1 (de)	1999-04-08	Vorrichtung und Methode zur Reisegeschwindigkeitssteuerung
DE69739563D1 (de)	2009-10-15	Verfahren und einrichtung zur steuerung eines kommionen
DE69702763D1 (de)	2000-09-14	Antriebsvorrichtung und verfahren zur steuerung derselben
DE69716853D1 (de)	2002-12-12	Antriebsvorrichtung und Verfahren zur Steuerung desselben
DE69709456D1 (de)	2002-02-07	Verfahren und Gerät zur Steuerung von Wechselrichter
DE69725124D1 (de)	2003-10-30	Verfahren und vorrichtung zur lichtkontrolle
DE69623837D1 (de)	2002-10-31	Verfahren und Vorrichtung zur Einkristallzüchtung
DE69732151D1 (de)	2005-02-03	Verfahren und vorrichtung zur steuerung der direktaufkohlung
DE69833912D1 (de)	2006-05-11	Verfahren und Vorrichtung zur Steuerung von Netzwerkeinheiten
DE69529812D1 (de)	2003-04-10	Verfahren und Vorrichtung zur Regelung einer Kühleinheit
DE69633733D1 (de)	2004-12-02	Iontophoretische vorrichtung und entsprechendes verfahren zur steuerung des stromes
DE69936708D1 (de)	2007-09-13	Verfahren und vorrichtung zur lampensteuerung
DE60000579D1 (de)	2002-11-14	Verfahren und vorrichtung zur steuerung des konuswachstums in einem halbleiterkristallzüchtungsverfahren
DE69519325D1 (de)	2000-12-14	Verfahren und Vorrichtung zur Steuerung eines Automatikgetriebes
DE69636138D1 (de)	2006-06-22	Verfahren und Vorrichtung zur Kommunikationssteuerung
DE59907867D1 (de)	2004-01-08	Verfahren und vorrichtung zur steuerung des antriebsstrangs eines fahrzeugs
DE69606640D1 (de)	2000-03-16	Verfahren und einrichtung zur regelung von stufenverbrennungsanlagen
DE69926599D1 (de)	2005-09-15	Verfahren und Vorrichtung zur Reglementierung des Datenverkehrs
DE69921899D1 (de)	2004-12-23	Verfahren und Vorrichtung zur Steuerung von virtuell verketteten Kanälen
DE69625973D1 (de)	2003-03-06	Vorrichtung und Verfahren zur Steuerung des Widerstandsschweissen

Legal Events

Date	Code	Title	Description
2000-11-23	8364	No opposition during term of opposition
2003-04-10	8339	Ceased/non-payment of the annual fee