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DE69608167D1 - Positiv arbeitende Photoresistzusammensetzung - Google Patents

Positiv arbeitende Photoresistzusammensetzung

Info

Publication number
DE69608167D1
DE69608167D1 DE69608167T DE69608167T DE69608167D1 DE 69608167 D1 DE69608167 D1 DE 69608167D1 DE 69608167 T DE69608167 T DE 69608167T DE 69608167 T DE69608167 T DE 69608167T DE 69608167 D1 DE69608167 D1 DE 69608167D1
Authority
DE
Germany
Prior art keywords
photoresist composition
positive working
working photoresist
positive
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69608167T
Other languages
English (en)
Other versions
DE69608167T2 (de
Inventor
Kazufumi Sato
Kazuyuki Nitta
Akiyoshi Yamazaki
Yoshika Sakai
Toshimasa Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Application granted granted Critical
Publication of DE69608167D1 publication Critical patent/DE69608167D1/de
Publication of DE69608167T2 publication Critical patent/DE69608167T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69608167T 1995-06-15 1996-06-06 Positiv arbeitende Photoresistzusammensetzung Expired - Fee Related DE69608167T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7172899A JP3046225B2 (ja) 1995-06-15 1995-06-15 ポジ型レジスト膜形成用塗布液

Publications (2)

Publication Number Publication Date
DE69608167D1 true DE69608167D1 (de) 2000-06-15
DE69608167T2 DE69608167T2 (de) 2001-01-11

Family

ID=15950407

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69608167T Expired - Fee Related DE69608167T2 (de) 1995-06-15 1996-06-06 Positiv arbeitende Photoresistzusammensetzung

Country Status (6)

Country Link
US (1) US5948589A (de)
EP (1) EP0749046B1 (de)
JP (1) JP3046225B2 (de)
KR (1) KR100240184B1 (de)
DE (1) DE69608167T2 (de)
TW (1) TW412663B (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980035211A (ko) * 1996-11-12 1998-08-05 박병재 배기관 오염 경보장치
US6042988A (en) * 1996-12-26 2000-03-28 Tokyo Ohka Kogyo Co., Ltd. Chemical-amplification-type negative resist composition
JP2998682B2 (ja) * 1997-03-13 2000-01-11 日本電気株式会社 化学増幅系レジスト
TW546540B (en) * 1997-04-30 2003-08-11 Wako Pure Chem Ind Ltd An agent for reducing the substrate dependence of resist and a resist composition
EP0887707B1 (de) * 1997-06-24 2003-09-03 Fuji Photo Film Co., Ltd. Positiv-Fotoresist-Zusammensetzung
US6103447A (en) 1998-02-25 2000-08-15 International Business Machines Corp. Approach to formulating irradiation sensitive positive resists
DE69926532T2 (de) * 1998-09-23 2006-06-01 E.I. Du Pont De Nemours And Co., Wilmington Photoresists, polymere und verfahren für die mikrolithographie
JP3707655B2 (ja) * 1998-10-24 2005-10-19 東京応化工業株式会社 ネガ型レジスト組成物
KR100363273B1 (ko) * 2000-07-29 2002-12-05 주식회사 동진쎄미켐 액정표시장치 회로용 포토레지스트 조성물
JP2002091003A (ja) * 2000-09-19 2002-03-27 Tokyo Ohka Kogyo Co Ltd 薄膜形成用ポジ型レジスト組成物及びそれを用いた感光材料
JP3771815B2 (ja) * 2001-05-31 2006-04-26 東京応化工業株式会社 感光性積層体、それに用いるポジ型レジスト組成物及びそれらを用いるレジストパターン形成方法
US6743563B2 (en) * 2001-08-15 2004-06-01 Shipley Company, L.L.C. Photoresist compositions
JP4053402B2 (ja) * 2002-10-23 2008-02-27 東京応化工業株式会社 Ｌｃｄ製造用ポジ型ホトレジスト組成物およびレジストパターンの形成方法
US7358028B2 (en) 2003-05-20 2008-04-15 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive photo resist composition and method for forming resist pattern
US7329478B2 (en) 2003-05-22 2008-02-12 Tokyo Ohka Kogyo Co., Ltd. Chemical amplified positive photo resist composition and method for forming resist pattern
JP4131864B2 (ja) * 2003-11-25 2008-08-13 東京応化工業株式会社 化学増幅型ポジ型感光性熱硬化性樹脂組成物、硬化物の形成方法、及び機能素子の製造方法
JP2005173369A (ja) 2003-12-12 2005-06-30 Tokyo Ohka Kogyo Co Ltd レジストパターンの剥離方法
US20070190447A1 (en) * 2004-02-19 2007-08-16 Tokyo Ohkakogyo Co. Ltd. Photoresist composition and method of forming resist pattern
KR100825465B1 (ko) * 2004-02-19 2008-04-28 도쿄 오카 고교 가부시키가이샤 포토레지스트 조성물 및 레지스트 패턴 형성방법
DE112005002819B4 (de) * 2004-12-03 2016-12-22 Tokyo Ohka Kogyo Co., Ltd. Positivresist - Zusammensetzung und Verfahren zur Erzeugung eines Resist - Musters
US7816072B2 (en) * 2005-05-02 2010-10-19 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
US8153346B2 (en) 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
US8715918B2 (en) * 2007-09-25 2014-05-06 Az Electronic Materials Usa Corp. Thick film resists
TWI556958B (zh) 2010-09-14 2016-11-11 東京應化工業股份有限公司 基質劑及含嵌段共聚物之層的圖型形成方法
EP2447773B1 (de) 2010-11-02 2013-07-10 Fujifilm Corporation Musterherstellungsverfahren, Verfahren zur Herstellung einer MEMS-Struktur, Verwendung eines gehärteten Films aus lichtempfindlicher Harzzusammensetzung als Opferschicht oder als Komponente einer MEMS-Struktur
JP5635449B2 (ja) 2011-03-11 2014-12-03 富士フイルム株式会社 樹脂パターン及びその製造方法、ｍｅｍｓ構造体の製造方法、半導体素子の製造方法、並びに、メッキパターン製造方法
KR102181241B1 (ko) * 2015-02-23 2020-11-20 현대중공업 주식회사 Scr 시스템의 촉매 성능진단 장치 및 방법
CN109844641B (zh) 2016-08-09 2022-10-11 默克专利有限公司 环境稳定的厚膜的化学放大抗蚀剂
JP7407587B2 (ja) * 2019-12-19 2024-01-04 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
DE3930087A1 (de) * 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5225316A (en) * 1990-11-26 1993-07-06 Minnesota Mining And Manufacturing Company An imagable article comprising a photosensitive composition comprising a polymer having acid labile pendant groups
DE4214363C2 (de) * 1991-04-30 1998-01-29 Toshiba Kawasaki Kk Strahlungsempfindliches Gemisch zur Ausbildung von Mustern
EP0537524A1 (de) * 1991-10-17 1993-04-21 Shipley Company Inc. Strahlungsempfindliche Zusammensetzungen und Verfahren
JPH05127369A (ja) * 1991-10-31 1993-05-25 Nec Corp レジスト材料
JP3010607B2 (ja) * 1992-02-25 2000-02-21 ジェイエスアール株式会社 感放射線性樹脂組成物
JPH05289322A (ja) * 1992-04-10 1993-11-05 Hitachi Ltd パタン形成材料及びそれを用いたパタン形成方法
JP3351582B2 (ja) * 1993-03-12 2002-11-25 株式会社東芝 感放射線性樹脂組成物
US5374500A (en) * 1993-04-02 1994-12-20 International Business Machines Corporation Positive photoresist composition containing photoacid generator and use thereof
JPH0792678A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JPH0792679A (ja) * 1993-06-29 1995-04-07 Nippon Zeon Co Ltd レジスト組成物
JPH07120929A (ja) * 1993-09-01 1995-05-12 Toshiba Corp 感光性組成物
JP3297199B2 (ja) * 1993-09-14 2002-07-02 株式会社東芝 レジスト組成物
JPH07104475A (ja) * 1993-10-08 1995-04-21 Hitachi Ltd 感光性樹脂組成物
JP3271728B2 (ja) * 1994-02-14 2002-04-08 日本電信電話株式会社 ポジ型レジスト組成物
US5736296A (en) * 1994-04-25 1998-04-07 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition comprising a mixture of two polyhydroxystyrenes having different acid cleavable groups and an acid generating compound
JP2956824B2 (ja) * 1995-06-15 1999-10-04 東京応化工業株式会社 ポジ型レジスト膜形成用塗布液

Also Published As

Publication number Publication date
EP0749046B1 (de) 2000-05-10
EP0749046A1 (de) 1996-12-18
DE69608167T2 (de) 2001-01-11
US5948589A (en) 1999-09-07
KR970002471A (ko) 1997-01-24
TW412663B (en) 2000-11-21
JP3046225B2 (ja) 2000-05-29
KR100240184B1 (ko) 2000-01-15
JPH096001A (ja) 1997-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee