DE69407354D1 - Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren - Google Patents
Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und HerstellungsverfahrenInfo
- Publication number
- DE69407354D1 DE69407354D1 DE69407354T DE69407354T DE69407354D1 DE 69407354 D1 DE69407354 D1 DE 69407354D1 DE 69407354 T DE69407354 T DE 69407354T DE 69407354 T DE69407354 T DE 69407354T DE 69407354 D1 DE69407354 D1 DE 69407354D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing processes
- semiconductor lasers
- multiple semiconductor
- crosstalk components
- reduced crosstalk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02461—Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE9300717A BE1007282A3 (nl) | 1993-07-12 | 1993-07-12 | Opto-electronische halfgeleiderinrichting met een array van halfgeleiderdiodelasers en werkwijze ter vervaardiging daarvan. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69407354D1 true DE69407354D1 (de) | 1998-01-29 |
DE69407354T2 DE69407354T2 (de) | 1998-06-04 |
Family
ID=3887174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69407354T Expired - Fee Related DE69407354T2 (de) | 1993-07-12 | 1994-07-06 | Vielfachhalbleiterlaser mit reduzierten Nebensprechkomponenten und Herstellungsverfahren |
Country Status (6)
Country | Link |
---|---|
US (1) | US5805630A (de) |
EP (1) | EP0634823B1 (de) |
JP (1) | JPH0758418A (de) |
KR (1) | KR960016031A (de) |
BE (1) | BE1007282A3 (de) |
DE (1) | DE69407354T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5568501A (en) * | 1993-11-01 | 1996-10-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser and method for producing the same |
US5765073A (en) * | 1995-04-10 | 1998-06-09 | Old Dominion University | Field controlled plasma discharge printing device |
GB2310755A (en) * | 1996-02-28 | 1997-09-03 | Sharp Kk | A method of etching a semiconductor structure |
US6058124A (en) * | 1997-11-25 | 2000-05-02 | Xerox Corporation | Monolithic independently addressable Red/IR side by side laser |
JPH11202275A (ja) * | 1998-01-07 | 1999-07-30 | Oki Electric Ind Co Ltd | リッジ導波路型半導体光機能素子およびその製造方法 |
JP4462657B2 (ja) * | 1998-06-04 | 2010-05-12 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
JP3862894B2 (ja) * | 1999-08-18 | 2006-12-27 | 株式会社東芝 | 半導体レーザ装置 |
US6618418B2 (en) | 2001-11-15 | 2003-09-09 | Xerox Corporation | Dual III-V nitride laser structure with reduced thermal cross-talk |
JP3736462B2 (ja) * | 2002-01-17 | 2006-01-18 | ソニー株式会社 | 半導体レーザ装置 |
US7215691B2 (en) * | 2002-09-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
JP4359035B2 (ja) | 2002-11-21 | 2009-11-04 | 富士通株式会社 | 光中継器 |
JP2006005167A (ja) * | 2004-06-17 | 2006-01-05 | Sumitomo Electric Ind Ltd | 半導体光素子 |
TWI364118B (en) * | 2007-06-29 | 2012-05-11 | Huga Optotech Inc | Semiconductor structure combination for epitaxy of semiconductor optoelectronic device and manufactur thereof |
DE102008006988A1 (de) | 2008-01-31 | 2009-08-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
EP2248391B1 (de) * | 2008-02-27 | 2011-11-23 | Koninklijke Philips Electronics N.V. | Verborgene organische optoelektronische vorrichtungen mit lichtstreuungsschicht |
US8102887B2 (en) * | 2009-05-26 | 2012-01-24 | Corning Incorporated | Edge bonded optical packages |
US20100303109A1 (en) * | 2009-05-26 | 2010-12-02 | Venkata Adiseshaiah Bhagavatula | Proximity Coupled Athermal Optical Package Comprising Laser Source And Compound Facet Wavelength Conversion Device |
DE102009054564A1 (de) * | 2009-12-11 | 2011-06-16 | Osram Opto Semiconductors Gmbh | Laserdiodenanordnung und Verfahren zum Herstellen einer Laserdiodenanordnung |
US8111452B2 (en) * | 2010-02-22 | 2012-02-07 | Corning Incorporated | Wavelength conversion device with microlens and optical package incorporating the same |
EP3051638A1 (de) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Abstimmbarer Laser und Verfahren zur Abstimmung eines Lasers |
KR102265698B1 (ko) * | 2019-12-06 | 2021-06-16 | 주식회사 인터엑스 | 프레스 성형정보를 이용한 품질 데이터 분석 및 레시피 최적화 기법 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57190384A (en) * | 1981-05-20 | 1982-11-22 | Toshiba Corp | Wavelength sweeping laser |
JPS60236274A (ja) * | 1984-05-10 | 1985-11-25 | Sharp Corp | 半導体レ−ザ素子 |
JPS60242686A (ja) * | 1984-05-17 | 1985-12-02 | Nec Corp | 半導体レ−ザアレイ |
JPS61168985A (ja) * | 1985-01-22 | 1986-07-30 | Nec Corp | 半導体レ−ザ素子 |
JPS6242592A (ja) * | 1985-08-20 | 1987-02-24 | Matsushita Electric Ind Co Ltd | 半導体レ−ザアレイ装置およびその製造方法 |
JPH084176B2 (ja) * | 1987-03-18 | 1996-01-17 | 松下電器産業株式会社 | 半導体レ−ザ装置の製造方法 |
JPS6453488A (en) * | 1987-08-24 | 1989-03-01 | Mitsubishi Electric Corp | Manufacture of light emitting semiconductor device |
JPH01243490A (ja) * | 1988-03-25 | 1989-09-28 | Hitachi Ltd | 半導体結晶の製造方法及び2ビームアレイ半導体レーザ装置 |
JPH01260878A (ja) * | 1988-04-12 | 1989-10-18 | Mitsubishi Electric Corp | 多点発光型半導体レーザ |
JPH01273378A (ja) * | 1988-04-26 | 1989-11-01 | Sharp Corp | 半導体レーザ装置 |
JPH0828551B2 (ja) * | 1988-05-07 | 1996-03-21 | 三菱電機株式会社 | アレイレーザ |
JPH02122584A (ja) * | 1988-10-31 | 1990-05-10 | Nec Corp | 半導体レーザアレイ及び光ディスク装置 |
US5033053A (en) * | 1989-03-30 | 1991-07-16 | Canon Kabushiki Kaisha | Semiconductor laser device having plurality of layers for emitting lights of different wavelengths and method of driving the same |
JP2545994B2 (ja) * | 1989-08-31 | 1996-10-23 | 日本電気株式会社 | 半導体光装置 |
-
1993
- 1993-07-12 BE BE9300717A patent/BE1007282A3/nl not_active IP Right Cessation
-
1994
- 1994-07-06 DE DE69407354T patent/DE69407354T2/de not_active Expired - Fee Related
- 1994-07-06 EP EP94201948A patent/EP0634823B1/de not_active Expired - Lifetime
- 1994-07-08 JP JP6157298A patent/JPH0758418A/ja active Pending
- 1994-07-11 US US08/273,528 patent/US5805630A/en not_active Expired - Lifetime
- 1994-07-11 KR KR1019940016614A patent/KR960016031A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH0758418A (ja) | 1995-03-03 |
EP0634823A1 (de) | 1995-01-18 |
DE69407354T2 (de) | 1998-06-04 |
EP0634823B1 (de) | 1997-12-17 |
US5805630A (en) | 1998-09-08 |
BE1007282A3 (nl) | 1995-05-09 |
KR960016031A (ko) | 1996-05-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: UNIPHASE OPTO HOLDINGS INC., SAN JOSE, CALIF., US |
|
8328 | Change in the person/name/address of the agent |
Free format text: E. TERGAU UND KOLLEGEN, 90482 NUERNBERG |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: JDS UNIPHASE CORP., SAN JOSE, CALIF., US |
|
8339 | Ceased/non-payment of the annual fee |