DE69401733D1 - Halbleiterlaser und dessen Herstellungsverfahren - Google Patents

Halbleiterlaser und dessen Herstellungsverfahren

Info

Publication number: DE69401733D1
Authority: DE; Germany
Prior art keywords: manufacturing process; semiconductor laser; laser; semiconductor; manufacturing
Prior art date: 1993-10-15
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE69401733T

Other languages

English (en)

Other versions

DE69401733T2 (de

Inventor

Akinori Seki

Toyokazu Ohnishi

Jiro Nakano

Takahide C O K K Toyo Sugiyama

Kazuyoshi C O K K Toyot Tomita

Hiroyuki C O K K Toyota C Kano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Toyota Motor Corp

Original Assignee

Toyota Motor Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-10-15

Filing date

1994-10-13

Publication date

1997-03-27

1994-10-13 Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp

1997-03-27 Application granted granted Critical

1997-03-27 Publication of DE69401733D1 publication Critical patent/DE69401733D1/de

1997-09-04 Publication of DE69401733T2 publication Critical patent/DE69401733T2/de

2014-10-14 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0207—Substrates having a special shape
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4043—Edge-emitting structures with vertically stacked active layers

Landscapes

Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

DE69401733T 1993-10-15 1994-10-13 Halbleiterlaser und dessen Herstellungsverfahren Expired - Fee Related DE69401733T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP05258510A JP3081094B2 (ja)	1993-10-15	1993-10-15	半導体レーザ及びその製造方法

Publications (2)

Publication Number	Publication Date
DE69401733D1 true DE69401733D1 (de)	1997-03-27
DE69401733T2 DE69401733T2 (de)	1997-09-04

Family

ID=17321216

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE69401733T Expired - Fee Related DE69401733T2 (de)	1993-10-15	1994-10-13	Halbleiterlaser und dessen Herstellungsverfahren

Country Status (4)

Country	Link
US (1)	US5604761A (de)
EP (1)	EP0649202B1 (de)
JP (1)	JP3081094B2 (de)
DE (1)	DE69401733T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0997943A (ja) *	1995-09-28	1997-04-08	Denso Corp	スタック型半導体レーザ
JP3314616B2 (ja) *	1995-10-05	2002-08-12	株式会社デンソー	大出力用半導体レーザ素子
JPH10242557A (ja) *	1997-02-21	1998-09-11	Sony Corp	半導体発光装置の製造方法
JP3486900B2 (ja) *	2000-02-15	2004-01-13	ソニー株式会社	発光装置およびそれを用いた光装置
US6730937B2 (en) *	2000-12-26	2004-05-04	Industrial Technology Research Institute	High resolution and brightness full-color LED display manufactured using CMP technique
US6822991B2 (en) *	2002-09-30	2004-11-23	Lumileds Lighting U.S., Llc	Light emitting devices including tunnel junctions
DE102004004765A1 (de)	2004-01-29	2005-09-01	Rwe Space Solar Power Gmbh	Aktive Zonen aufweisende Halbleiterstruktur
JP2008288500A (ja) *	2007-05-21	2008-11-27	Mitsubishi Electric Corp	半導体光デバイス、及びその製造方法
CN102751400B (zh) *	2012-07-18	2016-02-10	合肥彩虹蓝光科技有限公司	一种含金属背镀的半导体原件的切割方法
TW201414004A (zh) *	2012-09-26	2014-04-01	Chi Mei Lighting Tech Corp	發光二極體的製作方法
US8785234B2 (en) *	2012-10-31	2014-07-22	Infineon Technologies Ag	Method for manufacturing a plurality of chips
US10066768B2 (en)	2014-05-07	2018-09-04	Baker Hughes, A Ge Company, Llc	Tubular connecting arrangement and method of sealingly connecting tubulars
CN107160019A (zh) *	2017-02-23	2017-09-15	广东工业大学	一种半导体激光器微通道热沉叠片的焊接装置及方法
JP7072047B2 (ja) *	2018-02-26	2022-05-19	パナソニックホールディングス株式会社	半導体発光素子
WO2019186888A1 (ja) *	2018-03-29	2019-10-03	三菱電機株式会社	半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4306278A (en) *	1975-09-24	1981-12-15	Grumman Aerospace Corporation	Semiconductor laser array
JPS5756984A (en) *	1980-09-23	1982-04-05	Mitsubishi Electric Corp	Assembling method for semiconductor light emitting device
JPS58142588A (ja) *	1982-02-19	1983-08-24	Hitachi Ltd	半導体レ−ザ−装置
JPS58216485A (ja) *	1982-06-09	1983-12-16	Hitachi Ltd	半導体レ−ザ素子
JPS60196992A (ja) *	1984-03-19	1985-10-05	Matsushita Electric Ind Co Ltd	半導体レ−ザ装置
JPS63124486A (ja) *	1986-11-13	1988-05-27	Mitsubishi Electric Corp	半導体レ−ザの製造方法
JPS6414985A (en) *	1987-07-08	1989-01-19	Nec Corp	Heat sink for semiconductor light emitting element
US4791634A (en) *	1987-09-29	1988-12-13	Spectra-Physics, Inc.	Capillary heat pipe cooled diode pumped slab laser
US5001719A (en) *	1989-11-21	1991-03-19	The United States Of America As Represented By The Secretary Of The Army	Laser diode array
JPH07112083B2 (ja) *	1990-06-14	1995-11-29	新日本製鐵株式会社	アレイ半導体レーザ端面励起固体レーザ
JPH07112084B2 (ja) *	1990-07-20	1995-11-29	新日本製鐵株式会社	アレイ半導体レーザ励起固体レーザ装置
JP2965668B2 (ja) *	1990-11-13	1999-10-18	株式会社東芝	半導体レーザ素子及びその製造方法

1993
- 1993-10-15 JP JP05258510A patent/JP3081094B2/ja not_active Expired - Fee Related
1994
- 1994-10-13 EP EP94116166A patent/EP0649202B1/de not_active Expired - Lifetime
- 1994-10-13 DE DE69401733T patent/DE69401733T2/de not_active Expired - Fee Related
- 1994-10-14 US US08/323,431 patent/US5604761A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
DE69401733T2 (de)	1997-09-04
EP0649202A1 (de)	1995-04-19
EP0649202B1 (de)	1997-02-12
JP3081094B2 (ja)	2000-08-28
JPH07115247A (ja)	1995-05-02
US5604761A (en)	1997-02-18

Publication	Publication Date	Title
DE69517614D1 (de)	2000-08-03	Halbleiterdiodenlaser und dessen Herstellungsverfahren
DE69635410D1 (de)	2005-12-15	Halbleiterlaser und dessen herstellungsverfahren
DE69435045D1 (de)	2008-01-03	Halbleiter-Anordnung und Herstellungsverfahren dafür
DE69601477D1 (de)	1999-03-18	Halbleiterlaserdiode und deren Herstellungsverfahren
DE69415068D1 (de)	1999-01-21	Mikromotor und Herstellungsverfahren desselben
DE69409706D1 (de)	1998-05-28	Absorbierender Artikel und dessen Herstellungsmethode
DE69400042D1 (de)	1996-02-01	Oberflächenemittierender Laser und dessen Herstellungsverfahren
DE69429493D1 (de)	2002-01-31	Verbinder und dessen Herstellungsverfahren
DE69430511D1 (de)	2002-06-06	Halbleiteranordnung und Herstellungverfahren
DE69402147D1 (de)	1997-04-24	Halbleiterlaser mit Linse und dessen Herstellungsverfahren
DE69430513D1 (de)	2002-06-06	Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE69426208D1 (de)	2000-11-30	Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
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DE69406723D1 (de)	1997-12-18	Organopolysiloxan und Herstellungsverfahren
DE69403461D1 (de)	1997-07-03	Katheter und herstellungsverfahren
DE69433337D1 (de)	2003-12-24	Halbleiterbauelement und dessen Herstellungsverfahren
DE69414208D1 (de)	1998-12-03	Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69429906D1 (de)	2002-03-28	Halbleiterstruktur und Herstellungsverfahren
DE69417346D1 (de)	1999-04-29	Bildaufnehmer und Herstellungsverfahren
DE69413602D1 (de)	1998-11-05	Halbleiteranordnung und Herstellungsverfahren
EP0476689A3 (en)	1992-05-27	Semiconductor laser and manufacturing method of the same
DE69504262D1 (de)	1998-10-01	Halbleiterlaser und dessen Herstellungsverfahren
DE69410214D1 (de)	1998-06-18	Monolithische integrierter Laser und Modulator und Herstellungsverfahren
DE69409564D1 (de)	1998-05-20	Halbleiterlaser und Modulationsverfahren
DE69801342D1 (de)	2001-09-20	Halbleiterlaser und dazugehöriges Herstellungsverfahren

Legal Events

Date	Code	Title	Description
1998-03-12	8364	No opposition during term of opposition
2003-08-07	8339	Ceased/non-payment of the annual fee