DE60325620D1 - Lotbeschichtete kugel und verfahren zu ihrer herstellung und verfahren zur bildung einer halbleiterverbindungsstruktur - Google Patents
Lotbeschichtete kugel und verfahren zu ihrer herstellung und verfahren zur bildung einer halbleiterverbindungsstrukturInfo
- Publication number
- DE60325620D1 DE60325620D1 DE60325620T DE60325620T DE60325620D1 DE 60325620 D1 DE60325620 D1 DE 60325620D1 DE 60325620 T DE60325620 T DE 60325620T DE 60325620 T DE60325620 T DE 60325620T DE 60325620 D1 DE60325620 D1 DE 60325620D1
- Authority
- DE
- Germany
- Prior art keywords
- lotbeschichtete
- ball
- production
- forming
- connector structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Powder Metallurgy (AREA)
- Wire Bonding (AREA)
- Electroplating Methods And Accessories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002283301A JP4175857B2 (ja) | 2002-09-27 | 2002-09-27 | はんだ被覆ボールの製造方法 |
JP2002291187A JP4175858B2 (ja) | 2002-10-03 | 2002-10-03 | はんだ被覆ボールの製造方法 |
PCT/JP2003/012183 WO2004030428A1 (ja) | 2002-09-27 | 2003-09-24 | はんだ被覆ボールおよびその製造方法、ならびに半導体接続構造の形成方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60325620D1 true DE60325620D1 (de) | 2009-02-12 |
Family
ID=32044636
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60325620T Expired - Lifetime DE60325620D1 (de) | 2002-09-27 | 2003-09-24 | Lotbeschichtete kugel und verfahren zu ihrer herstellung und verfahren zur bildung einer halbleiterverbindungsstruktur |
Country Status (7)
Country | Link |
---|---|
US (1) | US7265046B2 (de) |
EP (1) | EP1551211B1 (de) |
KR (1) | KR20050042060A (de) |
CN (1) | CN100405883C (de) |
AU (1) | AU2003266588A1 (de) |
DE (1) | DE60325620D1 (de) |
WO (1) | WO2004030428A1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5042017B2 (ja) * | 2005-05-27 | 2012-10-03 | 株式会社Neomaxマテリアル | 銀被覆ボールおよびその製造方法 |
US7674637B2 (en) * | 2007-05-17 | 2010-03-09 | International Business Machines Corporation | Monitoring cool-down stress in a flip chip process using monitor solder bump structures |
TW200847877A (en) * | 2007-05-28 | 2008-12-01 | Hon Hai Prec Ind Co Ltd | Solder ball and electrical connector using the solder ball |
KR101055485B1 (ko) * | 2008-10-02 | 2011-08-08 | 삼성전기주식회사 | 범프볼을 갖는 반도체 패키지 |
WO2010082599A1 (ja) * | 2009-01-19 | 2010-07-22 | 株式会社日本スペリア社 | 線はんだ及びその供給方法と供給装置 |
US9175400B2 (en) * | 2009-10-28 | 2015-11-03 | Enthone Inc. | Immersion tin silver plating in electronics manufacture |
JP5690554B2 (ja) * | 2010-10-27 | 2015-03-25 | 昭和電工株式会社 | はんだボールの製造方法 |
US20120161312A1 (en) * | 2010-12-23 | 2012-06-28 | Hossain Md Altaf | Non-solder metal bumps to reduce package height |
KR101811301B1 (ko) | 2011-05-24 | 2017-12-26 | 삼성전자주식회사 | 반도체 패키지 |
CN102867797A (zh) * | 2011-07-07 | 2013-01-09 | 廖永丰 | 电子封装焊球结构 |
EP2752270B1 (de) | 2011-09-02 | 2017-01-11 | Mitsubishi Materials Corporation | Lötpulver und lötpaste mit dem lötpulver |
US9219030B2 (en) * | 2012-04-16 | 2015-12-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package on package structures and methods for forming the same |
DE102012109922B4 (de) | 2012-04-16 | 2020-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package-on-Package-Struktur und Verfahren zur Herstellung derselben |
US9768137B2 (en) | 2012-04-30 | 2017-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stud bump structure for semiconductor package assemblies |
KR20140036533A (ko) * | 2012-09-17 | 2014-03-26 | 삼성전기주식회사 | 인쇄회로기판 및 그 제조방법 |
US8928134B2 (en) | 2012-12-28 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Package on package bonding structure and method for forming the same |
KR101284363B1 (ko) * | 2013-01-03 | 2013-07-08 | 덕산하이메탈(주) | 금속코어 솔더볼 및 이를 이용한 반도체 장치의 방열접속구조 |
JP5811307B2 (ja) * | 2013-06-28 | 2015-11-11 | 千住金属工業株式会社 | はんだ材料及びはんだ継手 |
JP5692314B2 (ja) * | 2013-09-03 | 2015-04-01 | 千住金属工業株式会社 | バンプ電極、バンプ電極基板及びその製造方法 |
JP6106154B2 (ja) | 2014-12-26 | 2017-03-29 | 千住金属工業株式会社 | はんだ材料の製造方法 |
JP6607006B2 (ja) * | 2015-12-01 | 2019-11-20 | 三菱マテリアル株式会社 | ハンダ粉末及びこの粉末を用いたハンダ用ペーストの調製方法 |
KR102420126B1 (ko) * | 2016-02-01 | 2022-07-12 | 삼성전자주식회사 | 반도체 소자 |
EP3226291B1 (de) * | 2016-04-01 | 2024-04-03 | Nichia Corporation | Verfahren zur herstellung eines montagesockelelements für ein lichtemittierendes element, und montagesockelelement für ein lichtemittierendes element |
TWI590259B (zh) * | 2016-04-29 | 2017-07-01 | 南茂科技股份有限公司 | 焊球、其製造方法以及半導體元件 |
CN107482416A (zh) * | 2017-06-16 | 2017-12-15 | 得意精密电子(苏州)有限公司 | 电连接器的制造方法 |
CN107541702A (zh) * | 2017-09-08 | 2018-01-05 | 张家港创博金属科技有限公司 | 一种高效为核球镀层的方法与装置 |
CN107877030B (zh) * | 2017-11-07 | 2020-01-14 | 深圳市汉尔信电子科技有限公司 | 一种纳米锡铋复合焊膏及制备方法 |
JP6892621B1 (ja) * | 2020-09-10 | 2021-06-23 | 千住金属工業株式会社 | 核材料、電子部品及びバンプ電極の形成方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5535238B2 (de) * | 1975-01-24 | 1980-09-12 | ||
JP3274766B2 (ja) | 1994-06-28 | 2002-04-15 | 荏原ユージライト株式会社 | 低融点錫合金めっき浴 |
US5971253A (en) * | 1995-07-31 | 1999-10-26 | Tessera, Inc. | Microelectronic component mounting with deformable shell terminals |
US5573859A (en) * | 1995-09-05 | 1996-11-12 | Motorola, Inc. | Auto-regulating solder composition |
JP3466824B2 (ja) | 1996-07-19 | 2003-11-17 | 株式会社大和化成研究所 | 錫−銀合金めっき浴 |
JPH10144813A (ja) | 1996-11-06 | 1998-05-29 | Sumitomo Kinzoku Electro Device:Kk | Icパッケージの電極構造及びその製造方法 |
JP3837446B2 (ja) | 1997-03-27 | 2006-10-25 | 株式会社Neomaxマテリアル | 微小球のハンダめっき法 |
US6120885A (en) * | 1997-07-10 | 2000-09-19 | International Business Machines Corporation | Structure, materials, and methods for socketable ball grid |
US6337445B1 (en) * | 1998-03-16 | 2002-01-08 | Texas Instruments Incorporated | Composite connection structure and method of manufacturing |
JP4223648B2 (ja) | 1999-12-02 | 2009-02-12 | 昭和電工株式会社 | はんだ付けフラックス |
US20020046627A1 (en) * | 1998-06-10 | 2002-04-25 | Hitoshi Amita | Solder powder, flux, solder paste, soldering method, soldered circuit board, and soldered joint product |
JP3816241B2 (ja) * | 1998-07-14 | 2006-08-30 | 株式会社大和化成研究所 | 金属を還元析出させるための水溶液 |
JP2001220691A (ja) | 2000-02-03 | 2001-08-14 | Okuno Chem Ind Co Ltd | 導電性微粒子 |
JP2001319994A (ja) * | 2000-02-29 | 2001-11-16 | Allied Material Corp | 半導体パッケージとその製造方法 |
JP2002057177A (ja) | 2000-08-09 | 2002-02-22 | Hitachi Metals Ltd | はんだボールおよびその製造方法 |
US6517602B2 (en) * | 2000-03-14 | 2003-02-11 | Hitachi Metals, Ltd | Solder ball and method for producing same |
JP2001332641A (ja) | 2000-05-25 | 2001-11-30 | Hitachi Ltd | 半導体装置の製造方法および半導体装置 |
US6781065B1 (en) * | 2000-06-08 | 2004-08-24 | The Whitaker Corporation | Solder-coated articles useful for substrate attachment |
JP3350026B2 (ja) * | 2000-08-01 | 2002-11-25 | エフシーエム株式会社 | 電子部品用材料、電子部品用材料の接続方法、ボールグリッドアレイ型電子部品およびボールグリッドアレイ型電子部品の接続方法 |
TW511099B (en) * | 2000-08-04 | 2002-11-21 | Sekisui Chemical Co Ltd | Conductive fine particles, method for plating fine particles, and substrate structural body |
US6610591B1 (en) * | 2000-08-25 | 2003-08-26 | Micron Technology, Inc. | Methods of ball grid array |
JP4152596B2 (ja) * | 2001-02-09 | 2008-09-17 | 新日鉄マテリアルズ株式会社 | ハンダ合金、ハンダボール及びハンダバンプを有する電子部材 |
US7053491B2 (en) * | 2002-02-04 | 2006-05-30 | Intel Corporation | Electronic assembly having composite electronic contacts for attaching a package substrate to a printed circuit board |
-
2003
- 2003-09-24 DE DE60325620T patent/DE60325620D1/de not_active Expired - Lifetime
- 2003-09-24 AU AU2003266588A patent/AU2003266588A1/en not_active Abandoned
- 2003-09-24 KR KR1020047006830A patent/KR20050042060A/ko not_active Application Discontinuation
- 2003-09-24 EP EP03798471A patent/EP1551211B1/de not_active Expired - Lifetime
- 2003-09-24 US US10/529,172 patent/US7265046B2/en not_active Expired - Fee Related
- 2003-09-24 CN CNB038013290A patent/CN100405883C/zh not_active Expired - Lifetime
- 2003-09-24 WO PCT/JP2003/012183 patent/WO2004030428A1/ja active Application Filing
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KR20050042060A (ko) | 2005-05-04 |
CN100405883C (zh) | 2008-07-23 |
AU2003266588A1 (en) | 2004-04-19 |
US7265046B2 (en) | 2007-09-04 |
WO2004030428A1 (ja) | 2004-04-08 |
CN1572129A (zh) | 2005-01-26 |
EP1551211B1 (de) | 2008-12-31 |
EP1551211A1 (de) | 2005-07-06 |
EP1551211A4 (de) | 2005-12-07 |
US20060055054A1 (en) | 2006-03-16 |
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