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DE60324203D1 - Verfahren und system zur datenübertragung - Google Patents

Verfahren und system zur datenübertragung

Info

Publication number
DE60324203D1
DE60324203D1 DE60324203T DE60324203T DE60324203D1 DE 60324203 D1 DE60324203 D1 DE 60324203D1 DE 60324203 T DE60324203 T DE 60324203T DE 60324203 T DE60324203 T DE 60324203T DE 60324203 D1 DE60324203 D1 DE 60324203D1
Authority
DE
Germany
Prior art keywords
data transmission
transmission
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60324203T
Other languages
English (en)
Inventor
Shinya Fujioka
Kotoku Sato
Hitoshi Ikeda
Yoshiaki Okuyama
Jun Ohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE60324203D1 publication Critical patent/DE60324203D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/08Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/14Handling requests for interconnection or transfer
    • G06F13/16Handling requests for interconnection or transfer for access to memory bus
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406Management or control of the refreshing or charge-regeneration cycles
    • G11C11/40615Internal triggering or timing of refresh, e.g. hidden refresh, self refresh, pseudo-SRAMs
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436Arrangements for verifying correct programming or erasure
    • G11C16/3454Arrangements for verifying correct programming or for detecting overprogrammed cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20Employing a main memory using a specific memory technology
    • G06F2212/202Non-volatile memory
    • G06F2212/2022Flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Memory System (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
DE60324203T 2003-06-27 2003-06-27 Verfahren und system zur datenübertragung Expired - Lifetime DE60324203D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/008211 WO2005001694A1 (ja) 2003-06-27 2003-06-27 データ転送方法及びシステム

Publications (1)

Publication Number Publication Date
DE60324203D1 true DE60324203D1 (de) 2008-11-27

Family

ID=33549054

Family Applications (2)

Application Number Title Priority Date Filing Date
DE60324203T Expired - Lifetime DE60324203D1 (de) 2003-06-27 2003-06-27 Verfahren und system zur datenübertragung
DE60328057T Expired - Lifetime DE60328057D1 (de) 2003-06-27 2003-06-27 Verfahren und System zur Datenübertragung auf Basis eines flüchtigen und eines nicht-flüchtigen Speichers

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE60328057T Expired - Lifetime DE60328057D1 (de) 2003-06-27 2003-06-27 Verfahren und System zur Datenübertragung auf Basis eines flüchtigen und eines nicht-flüchtigen Speichers

Country Status (8)

Country Link
US (1) US7730232B2 (de)
EP (2) EP1821312B1 (de)
JP (1) JP4194600B2 (de)
KR (1) KR100685770B1 (de)
CN (1) CN100353336C (de)
AU (1) AU2003244008A1 (de)
DE (2) DE60324203D1 (de)
WO (1) WO2005001694A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7779165B2 (en) * 2002-01-11 2010-08-17 Oracle America, Inc. Scalable method for producer and consumer elimination
CN100505796C (zh) * 2004-11-24 2009-06-24 中兴通讯股份有限公司 一种手机显示时间的方法
FR2888032A1 (fr) * 2005-06-30 2007-01-05 Gemplus Sa Procede de gestion de memoire non volatile dans une carte a puce
US7743409B2 (en) 2005-07-08 2010-06-22 Sandisk Corporation Methods used in a mass storage device with automated credentials loading
US7934049B2 (en) * 2005-09-14 2011-04-26 Sandisk Corporation Methods used in a secure yet flexible system architecture for secure devices with flash mass storage memory
US8966284B2 (en) 2005-09-14 2015-02-24 Sandisk Technologies Inc. Hardware driver integrity check of memory card controller firmware
EP1850347A1 (de) * 2006-04-28 2007-10-31 Deutsche Thomson-Brandt Gmbh Verfahren und Vorrichtung zum Schreiben auf einen Flash-Speicher
JP2008112486A (ja) * 2006-10-30 2008-05-15 Toshiba Corp 半導体装置
US7554855B2 (en) * 2006-12-20 2009-06-30 Mosaid Technologies Incorporated Hybrid solid-state memory system having volatile and non-volatile memory
CN101685381B (zh) 2008-09-26 2013-07-24 美光科技公司 固态大容量存储装置的数据串流
KR100958741B1 (ko) * 2008-10-24 2010-05-19 주식회사 파이널데이터 이기종 모바일 기기 간의 데이터 전달 시스템 및 그 방법
CN102629187B (zh) * 2012-02-29 2014-12-10 珠海全志科技股份有限公司 Sd/mmc卡的开放式读写控制方法
KR102050474B1 (ko) * 2012-09-26 2019-11-29 삼성전자주식회사 휘발성 메모리 장치 및 메모리 컨트롤러
CN104943397B (zh) 2015-06-25 2016-08-17 珠海艾派克微电子有限公司 成像盒芯片、成像盒以及更换成像盒芯片序列号的方法
EP3909048A4 (de) 2019-05-17 2022-08-17 Yangtze Memory Technologies Co., Ltd. Cache-programmbetrieb einer dreidimensionalen speichervorrichtung mit statischem direktzugriffsspeicher
EP3909075A4 (de) 2019-05-17 2022-09-07 Yangtze Memory Technologies Co., Ltd. Dreidimensionale speichervorrichtung mit statischem direktzugriffsspeicher

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3723972A (en) * 1971-11-24 1973-03-27 A Chadda Data communication system
JP2750704B2 (ja) * 1988-08-29 1998-05-13 日立マクセル株式会社 Icカードの情報書込み方式及びicカード
US5592348A (en) * 1991-05-17 1997-01-07 Adaptec, Inc. Method and structure for locating and skipping over servo bursts on a magnetic disk
EP0898232A2 (de) * 1994-08-31 1999-02-24 Motorola, Inc. Synchrones Speicherzugriffsverfahren
US5710943A (en) * 1995-06-30 1998-01-20 Maxtor Corporation Time based data retention in a variable data rate disk drive
JP2806324B2 (ja) * 1995-08-25 1998-09-30 日本電気株式会社 内部降圧回路
JPH1083345A (ja) * 1996-09-09 1998-03-31 Fujitsu Ltd フラッシュ・メモリのデータ更新装置
KR100249171B1 (ko) * 1997-03-12 2000-03-15 김영환 비동기식 데이터 송수신 장치의 에러 검출 방법
JP2000228094A (ja) * 1999-02-04 2000-08-15 Toshiba Corp 不揮発性半導体記憶装置
JP4216457B2 (ja) * 2000-11-30 2009-01-28 富士通マイクロエレクトロニクス株式会社 半導体記憶装置及び半導体装置
US6865701B1 (en) * 2001-03-29 2005-03-08 Apple Computer, Inc. Method and apparatus for improved memory core testing
EP1251521A1 (de) * 2001-04-19 2002-10-23 STMicroelectronics S.r.l. Dynamische Speicheranordnung mit wahlfreiem Zugriff, die sich funktionell als eine statische Speicheranordnung mit wahlfreiem Zugriff beträgt
JP4049297B2 (ja) * 2001-06-11 2008-02-20 株式会社ルネサステクノロジ 半導体記憶装置
JP3979486B2 (ja) * 2001-09-12 2007-09-19 株式会社ルネサステクノロジ 不揮発性記憶装置およびデータ格納方法

Also Published As

Publication number Publication date
EP1640872A4 (de) 2006-11-15
JP4194600B2 (ja) 2008-12-10
KR100685770B1 (ko) 2007-02-26
CN1701306A (zh) 2005-11-23
JPWO2005001694A1 (ja) 2006-08-10
CN100353336C (zh) 2007-12-05
EP1640872B1 (de) 2008-10-15
DE60328057D1 (de) 2009-07-30
EP1640872A1 (de) 2006-03-29
EP1821312B1 (de) 2009-06-17
AU2003244008A1 (en) 2005-01-13
WO2005001694A1 (ja) 2005-01-06
US20050185493A1 (en) 2005-08-25
US7730232B2 (en) 2010-06-01
EP1821312A1 (de) 2007-08-22
KR20050070083A (ko) 2005-07-05

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP

8328 Change in the person/name/address of the agent

Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE