DE60313636D1 - Nanokristalline schichten und verbesserte mram-tunnelsperrschichten - Google Patents
Nanokristalline schichten und verbesserte mram-tunnelsperrschichtenInfo
- Publication number
- DE60313636D1 DE60313636D1 DE60313636T DE60313636T DE60313636D1 DE 60313636 D1 DE60313636 D1 DE 60313636D1 DE 60313636 T DE60313636 T DE 60313636T DE 60313636 T DE60313636 T DE 60313636T DE 60313636 D1 DE60313636 D1 DE 60313636D1
- Authority
- DE
- Germany
- Prior art keywords
- interruptions
- layer
- nanocrystalline layers
- tunnel
- improved mram
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/4902—Electromagnet, transformer or inductor
- Y10T29/49021—Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
- Y10T29/49032—Fabricating head structure or component thereof
- Y10T29/49036—Fabricating head structure or component thereof including measuring or testing
- Y10T29/49043—Depositing magnetic layer or coating
- Y10T29/49044—Plural magnetic deposition layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Thin Magnetic Films (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US232111 | 2002-08-30 | ||
US10/232,111 US6801415B2 (en) | 2002-08-30 | 2002-08-30 | Nanocrystalline layers for improved MRAM tunnel junctions |
PCT/US2003/023063 WO2004107370A2 (en) | 2002-08-30 | 2003-07-24 | Nanocrystalline layers and improved mram tunnel junctions |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60313636D1 true DE60313636D1 (de) | 2007-06-14 |
DE60313636T2 DE60313636T2 (de) | 2007-08-30 |
Family
ID=31976922
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60313636T Expired - Fee Related DE60313636T2 (de) | 2002-08-30 | 2003-07-24 | Nanokristalline schichten und verbesserte mram-tunnelsperrschichten |
Country Status (10)
Country | Link |
---|---|
US (1) | US6801415B2 (de) |
EP (1) | EP1547102B1 (de) |
JP (1) | JP2006506828A (de) |
KR (1) | KR101036124B1 (de) |
CN (1) | CN100339915C (de) |
AT (1) | ATE361536T1 (de) |
AU (1) | AU2003304170A1 (de) |
DE (1) | DE60313636T2 (de) |
TW (1) | TWI311754B (de) |
WO (1) | WO2004107370A2 (de) |
Families Citing this family (58)
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US6724652B2 (en) * | 2002-05-02 | 2004-04-20 | Micron Technology, Inc. | Low remanence flux concentrator for MRAM devices |
US7002228B2 (en) * | 2003-02-18 | 2006-02-21 | Micron Technology, Inc. | Diffusion barrier for improving the thermal stability of MRAM devices |
US7054119B2 (en) * | 2003-06-18 | 2006-05-30 | Hewlett-Packard Development Company, L.P. | Coupled ferromagnetic systems having modified interfaces |
US6893741B2 (en) * | 2003-06-24 | 2005-05-17 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetic device with improved antiferromagnetically coupling film |
JP3818592B2 (ja) * | 2003-11-04 | 2006-09-06 | Tdk株式会社 | 磁気抵抗効果装置およびその製造方法、薄膜磁気ヘッド、ヘッドジンバルアセンブリならびにハードディスク装置 |
KR100634501B1 (ko) * | 2004-01-29 | 2006-10-13 | 삼성전자주식회사 | 자기 메모리 소자 및 그 제조방법 |
US7339769B2 (en) * | 2004-03-02 | 2008-03-04 | Hitachi Global Storage Technologies Netherlands B.V. | Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer |
US6960480B1 (en) * | 2004-05-19 | 2005-11-01 | Headway Technologies, Inc. | Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head |
US7098495B2 (en) * | 2004-07-26 | 2006-08-29 | Freescale Semiconducor, Inc. | Magnetic tunnel junction element structures and methods for fabricating the same |
US6992910B1 (en) * | 2004-11-18 | 2006-01-31 | Maglabs, Inc. | Magnetic random access memory with three or more stacked toggle memory cells and method for writing a selected cell |
US7251110B2 (en) * | 2005-01-18 | 2007-07-31 | Hitachi Global Storage Technologies Netherlands B.V. | GMR sensor having layers treated with nitrogen for increased magnetoresistance |
US7672094B2 (en) * | 2005-01-18 | 2010-03-02 | Hitachi Global Storage Technologies Netherlands B.V. | TMR sensor having an under-layer treated with nitrogen for increased magnetoresistance |
US7267997B1 (en) | 2005-04-29 | 2007-09-11 | Samsung Electronics Co., Ltd. | Process for forming magnetic memory structures |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7575978B2 (en) * | 2005-08-04 | 2009-08-18 | Micron Technology, Inc. | Method for making conductive nanoparticle charge storage element |
US7989290B2 (en) | 2005-08-04 | 2011-08-02 | Micron Technology, Inc. | Methods for forming rhodium-based charge traps and apparatus including rhodium-based charge traps |
US8582252B2 (en) | 2005-11-02 | 2013-11-12 | Seagate Technology Llc | Magnetic layer with grain refining agent |
US20070121254A1 (en) * | 2005-11-29 | 2007-05-31 | Honeywell International Inc. | Protective and conductive layer for giant magnetoresistance |
US7635654B2 (en) * | 2006-01-27 | 2009-12-22 | Everspin Technologies, Inc. | Magnetic tunnel junction device with improved barrier layer |
US8183652B2 (en) * | 2007-02-12 | 2012-05-22 | Avalanche Technology, Inc. | Non-volatile magnetic memory with low switching current and high thermal stability |
US7732881B2 (en) * | 2006-11-01 | 2010-06-08 | Avalanche Technology, Inc. | Current-confined effect of magnetic nano-current-channel (NCC) for magnetic random access memory (MRAM) |
US8508984B2 (en) * | 2006-02-25 | 2013-08-13 | Avalanche Technology, Inc. | Low resistance high-TMR magnetic tunnel junction and process for fabrication thereof |
US8018011B2 (en) * | 2007-02-12 | 2011-09-13 | Avalanche Technology, Inc. | Low cost multi-state magnetic memory |
US8058696B2 (en) * | 2006-02-25 | 2011-11-15 | Avalanche Technology, Inc. | High capacity low cost multi-state magnetic memory |
US8084835B2 (en) * | 2006-10-20 | 2011-12-27 | Avalanche Technology, Inc. | Non-uniform switching based non-volatile magnetic based memory |
US8063459B2 (en) * | 2007-02-12 | 2011-11-22 | Avalanche Technologies, Inc. | Non-volatile magnetic memory element with graded layer |
US8363457B2 (en) * | 2006-02-25 | 2013-01-29 | Avalanche Technology, Inc. | Magnetic memory sensing circuit |
US20080246104A1 (en) * | 2007-02-12 | 2008-10-09 | Yadav Technology | High Capacity Low Cost Multi-State Magnetic Memory |
US8535952B2 (en) * | 2006-02-25 | 2013-09-17 | Avalanche Technology, Inc. | Method for manufacturing non-volatile magnetic memory |
US8120949B2 (en) * | 2006-04-27 | 2012-02-21 | Avalanche Technology, Inc. | Low-cost non-volatile flash-RAM memory |
US20090218645A1 (en) * | 2007-02-12 | 2009-09-03 | Yadav Technology Inc. | multi-state spin-torque transfer magnetic random access memory |
US7869266B2 (en) * | 2007-10-31 | 2011-01-11 | Avalanche Technology, Inc. | Low current switching magnetic tunnel junction design for magnetic memory using domain wall motion |
US8542524B2 (en) * | 2007-02-12 | 2013-09-24 | Avalanche Technology, Inc. | Magnetic random access memory (MRAM) manufacturing process for a small magnetic tunnel junction (MTJ) design with a low programming current requirement |
US8367506B2 (en) * | 2007-06-04 | 2013-02-05 | Micron Technology, Inc. | High-k dielectrics with gold nano-particles |
US20090121266A1 (en) * | 2007-11-13 | 2009-05-14 | Freescale Semiconductor, Inc. | Methods and structures for exchange-coupled magnetic multi-layer structure with improved operating temperature behavior |
US8802451B2 (en) | 2008-02-29 | 2014-08-12 | Avalanche Technology Inc. | Method for manufacturing high density non-volatile magnetic memory |
US8659852B2 (en) | 2008-04-21 | 2014-02-25 | Seagate Technology Llc | Write-once magentic junction memory array |
US7855911B2 (en) | 2008-05-23 | 2010-12-21 | Seagate Technology Llc | Reconfigurable magnetic logic device using spin torque |
US7852663B2 (en) | 2008-05-23 | 2010-12-14 | Seagate Technology Llc | Nonvolatile programmable logic gates and adders |
US7881098B2 (en) | 2008-08-26 | 2011-02-01 | Seagate Technology Llc | Memory with separate read and write paths |
US7985994B2 (en) | 2008-09-29 | 2011-07-26 | Seagate Technology Llc | Flux-closed STRAM with electronically reflective insulative spacer |
US8169810B2 (en) | 2008-10-08 | 2012-05-01 | Seagate Technology Llc | Magnetic memory with asymmetric energy barrier |
US8039913B2 (en) | 2008-10-09 | 2011-10-18 | Seagate Technology Llc | Magnetic stack with laminated layer |
US8089132B2 (en) | 2008-10-09 | 2012-01-03 | Seagate Technology Llc | Magnetic memory with phonon glass electron crystal material |
US7880209B2 (en) * | 2008-10-09 | 2011-02-01 | Seagate Technology Llc | MRAM cells including coupled free ferromagnetic layers for stabilization |
US8045366B2 (en) | 2008-11-05 | 2011-10-25 | Seagate Technology Llc | STRAM with composite free magnetic element |
US8043732B2 (en) | 2008-11-11 | 2011-10-25 | Seagate Technology Llc | Memory cell with radial barrier |
US7826181B2 (en) | 2008-11-12 | 2010-11-02 | Seagate Technology Llc | Magnetic memory with porous non-conductive current confinement layer |
US8289756B2 (en) | 2008-11-25 | 2012-10-16 | Seagate Technology Llc | Non volatile memory including stabilizing structures |
US7826259B2 (en) | 2009-01-29 | 2010-11-02 | Seagate Technology Llc | Staggered STRAM cell |
KR101144211B1 (ko) * | 2009-04-08 | 2012-05-10 | 에스케이하이닉스 주식회사 | 자기저항소자 |
US7999338B2 (en) | 2009-07-13 | 2011-08-16 | Seagate Technology Llc | Magnetic stack having reference layers with orthogonal magnetization orientation directions |
JP2012015213A (ja) * | 2010-06-29 | 2012-01-19 | Sony Corp | 記憶素子、記憶素子の製造方法、及び、メモリ |
US8508221B2 (en) | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
US8345471B2 (en) | 2010-10-07 | 2013-01-01 | Hynix Semiconductor Inc. | Magneto-resistance element and semiconductor memory device including the same |
US9780299B2 (en) * | 2015-11-23 | 2017-10-03 | Headway Technologies, Inc. | Multilayer structure for reducing film roughness in magnetic devices |
US10347825B2 (en) | 2017-02-17 | 2019-07-09 | International Business Machines Corporation | Selective deposition and nitridization of bottom electrode metal for MRAM applications |
CN112670403B (zh) | 2019-10-16 | 2024-04-30 | 联华电子股份有限公司 | 半导体结构 |
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JP2924785B2 (ja) * | 1996-04-25 | 1999-07-26 | 日本電気株式会社 | 磁気抵抗効果素子薄膜及びその製造方法 |
JPH1041132A (ja) | 1996-07-18 | 1998-02-13 | Sanyo Electric Co Ltd | 磁気抵抗効果膜 |
US5861328A (en) | 1996-10-07 | 1999-01-19 | Motorola, Inc. | Method of fabricating GMR devices |
EP0877398B1 (de) * | 1997-05-09 | 2003-12-17 | Kabushiki Kaisha Toshiba | Magnetisches Element und Magnetkopf oder Speicherelement die dieses Element verwenden |
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DE19941046C1 (de) * | 1999-08-28 | 2001-01-11 | Bosch Gmbh Robert | Magnetisch sensitive Schichtanordnung mit GMR-Effekt und Verfahren zu deren Herstellung |
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US6205052B1 (en) | 1999-10-21 | 2001-03-20 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
US6519121B1 (en) * | 1999-11-22 | 2003-02-11 | International Business Machines Corporation | Spin valve sensor with composite pinned layer structure for improving biasing of free layer structure with reduced sense current shunting |
US6727105B1 (en) * | 2000-02-28 | 2004-04-27 | Hewlett-Packard Development Company, L.P. | Method of fabricating an MRAM device including spin dependent tunneling junction memory cells |
US20020101689A1 (en) * | 2000-04-05 | 2002-08-01 | Xuefei Tang | High sensitivity spin valve stacks using oxygen in spacer layer deposition |
JP3694440B2 (ja) * | 2000-04-12 | 2005-09-14 | アルプス電気株式会社 | 交換結合膜の製造方法、及び前記交換結合膜を用いた磁気抵抗効果素子の製造方法、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッドの製造方法 |
JP2001325704A (ja) * | 2000-05-15 | 2001-11-22 | Nec Corp | 磁気抵抗効果センサ、磁気抵抗効果センサの製造方法、磁気抵抗検出システム、および磁気記憶システム |
JP2001345494A (ja) * | 2000-05-30 | 2001-12-14 | Sony Corp | 磁気抵抗効果素子とその製造方法、及び磁気抵抗効果型磁気ヘッドとその製造方法、並びに磁気記録再生装置 |
JP3839644B2 (ja) * | 2000-07-11 | 2006-11-01 | アルプス電気株式会社 | 交換結合膜と、この交換結合膜を用いた磁気抵抗効果素子、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
US6538859B1 (en) * | 2000-07-31 | 2003-03-25 | International Business Machines Corporation | Giant magnetoresistive sensor with an AP-coupled low Hk free layer |
US6710987B2 (en) * | 2000-11-17 | 2004-03-23 | Tdk Corporation | Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes |
JP3756757B2 (ja) * | 2000-12-01 | 2006-03-15 | アルプス電気株式会社 | 交換結合膜と、この交換結合膜を用いた磁気抵抗効果素子、ならびに前記磁気抵抗効果素子を用いた薄膜磁気ヘッド |
JP4423658B2 (ja) * | 2002-09-27 | 2010-03-03 | 日本電気株式会社 | 磁気抵抗素子及びその製造方法 |
-
2002
- 2002-08-30 US US10/232,111 patent/US6801415B2/en not_active Expired - Lifetime
-
2003
- 2003-07-24 CN CNB038205408A patent/CN100339915C/zh not_active Expired - Lifetime
- 2003-07-24 EP EP03816719A patent/EP1547102B1/de not_active Expired - Lifetime
- 2003-07-24 WO PCT/US2003/023063 patent/WO2004107370A2/en active IP Right Grant
- 2003-07-24 JP JP2005500435A patent/JP2006506828A/ja active Pending
- 2003-07-24 AT AT03816719T patent/ATE361536T1/de not_active IP Right Cessation
- 2003-07-24 AU AU2003304170A patent/AU2003304170A1/en not_active Abandoned
- 2003-07-24 DE DE60313636T patent/DE60313636T2/de not_active Expired - Fee Related
- 2003-07-24 KR KR1020057003506A patent/KR101036124B1/ko active IP Right Grant
- 2003-08-07 TW TW092121639A patent/TWI311754B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE60313636T2 (de) | 2007-08-30 |
WO2004107370A2 (en) | 2004-12-09 |
US20040042128A1 (en) | 2004-03-04 |
JP2006506828A (ja) | 2006-02-23 |
KR101036124B1 (ko) | 2011-05-23 |
WO2004107370A3 (en) | 2005-02-03 |
ATE361536T1 (de) | 2007-05-15 |
EP1547102A2 (de) | 2005-06-29 |
US6801415B2 (en) | 2004-10-05 |
AU2003304170A8 (en) | 2005-01-21 |
CN100339915C (zh) | 2007-09-26 |
KR20050036985A (ko) | 2005-04-20 |
EP1547102B1 (de) | 2007-05-02 |
TW200405335A (en) | 2004-04-01 |
AU2003304170A1 (en) | 2005-01-21 |
CN1679121A (zh) | 2005-10-05 |
TWI311754B (en) | 2009-07-01 |
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