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DE602004023997D1 - Herstellungsverfahren für akustischen Volumenwellen Resonator unter Verwendung der inneren mechanischen Spannung einer Metallschicht und damit hergestellter Resonator - Google Patents

Herstellungsverfahren für akustischen Volumenwellen Resonator unter Verwendung der inneren mechanischen Spannung einer Metallschicht und damit hergestellter Resonator

Info

Publication number
DE602004023997D1
DE602004023997D1 DE602004023997T DE602004023997T DE602004023997D1 DE 602004023997 D1 DE602004023997 D1 DE 602004023997D1 DE 602004023997 T DE602004023997 T DE 602004023997T DE 602004023997 T DE602004023997 T DE 602004023997T DE 602004023997 D1 DE602004023997 D1 DE 602004023997D1
Authority
DE
Germany
Prior art keywords
resonator
metal layer
production method
acoustic wave
internal stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004023997T
Other languages
English (en)
Inventor
Jong-Seok Kim
Sung-Hoon Choa
In-Sang Song
Young-Tack Hong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004023997D1 publication Critical patent/DE602004023997D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02133—Means for compensation or elimination of undesirable effects of stress
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
DE602004023997T 2003-05-22 2004-04-08 Herstellungsverfahren für akustischen Volumenwellen Resonator unter Verwendung der inneren mechanischen Spannung einer Metallschicht und damit hergestellter Resonator Expired - Lifetime DE602004023997D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0032651A KR100470708B1 (ko) 2003-05-22 2003-05-22 금속막의 내부응력을 이용한 박막 벌크 음향 공진기제조방법 및 그에 의한 공진기

Publications (1)

Publication Number Publication Date
DE602004023997D1 true DE602004023997D1 (de) 2009-12-24

Family

ID=33095674

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004023997T Expired - Lifetime DE602004023997D1 (de) 2003-05-22 2004-04-08 Herstellungsverfahren für akustischen Volumenwellen Resonator unter Verwendung der inneren mechanischen Spannung einer Metallschicht und damit hergestellter Resonator

Country Status (5)

Country Link
US (2) US7671427B2 (de)
EP (1) EP1480335B1 (de)
JP (1) JP3985965B2 (de)
KR (1) KR100470708B1 (de)
DE (1) DE602004023997D1 (de)

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US20060065622A1 (en) * 2004-09-27 2006-03-30 Floyd Philip D Method and system for xenon fluoride etching with enhanced efficiency
EP1863174A1 (de) * 2006-05-31 2007-12-05 St Microelectronics S.A. Bauteil, das einen BAW-Filter enthält
JP4853523B2 (ja) * 2006-12-25 2012-01-11 株式会社村田製作所 圧電薄膜共振子
EP2104948A2 (de) * 2007-02-20 2009-09-30 Qualcomm Mems Technologies, Inc. Ausrüstung und verfahren zur mems-ätzung
KR20100016195A (ko) * 2007-04-04 2010-02-12 퀄컴 엠이엠스 테크놀로지스, 인크. 희생층의 계면 변형에 의한 해제 에칭 공격의 제거방법
US7719752B2 (en) 2007-05-11 2010-05-18 Qualcomm Mems Technologies, Inc. MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same
US10266398B1 (en) 2007-07-25 2019-04-23 Hrl Laboratories, Llc ALD metal coatings for high Q MEMS structures
BRPI0814680A2 (pt) 2007-07-25 2016-10-04 Qualcomm Mems Technologies Inc dispositivo óptico mems e respectivo método de fabrico
US8151640B1 (en) 2008-02-05 2012-04-10 Hrl Laboratories, Llc MEMS on-chip inertial navigation system with error correction
US7802356B1 (en) 2008-02-21 2010-09-28 Hrl Laboratories, Llc Method of fabricating an ultra thin quartz resonator component
US8023191B2 (en) * 2008-05-07 2011-09-20 Qualcomm Mems Technologies, Inc. Printable static interferometric images
US8176607B1 (en) 2009-10-08 2012-05-15 Hrl Laboratories, Llc Method of fabricating quartz resonators
US8912711B1 (en) 2010-06-22 2014-12-16 Hrl Laboratories, Llc Thermal stress resistant resonator, and a method for fabricating same
US9599470B1 (en) 2013-09-11 2017-03-21 Hrl Laboratories, Llc Dielectric high Q MEMS shell gyroscope structure
US9977097B1 (en) 2014-02-21 2018-05-22 Hrl Laboratories, Llc Micro-scale piezoelectric resonating magnetometer
US9991863B1 (en) 2014-04-08 2018-06-05 Hrl Laboratories, Llc Rounded and curved integrated tethers for quartz resonators
US10308505B1 (en) 2014-08-11 2019-06-04 Hrl Laboratories, Llc Method and apparatus for the monolithic encapsulation of a micro-scale inertial navigation sensor suite
US10031191B1 (en) 2015-01-16 2018-07-24 Hrl Laboratories, Llc Piezoelectric magnetometer capable of sensing a magnetic field in multiple vectors
US9871007B2 (en) * 2015-09-25 2018-01-16 Intel Corporation Packaged integrated circuit device with cantilever structure
US10175307B1 (en) 2016-01-15 2019-01-08 Hrl Laboratories, Llc FM demodulation system for quartz MEMS magnetometer
CN113519119A (zh) 2018-08-20 2021-10-19 D·伍尔西 声谐振器
KR102212376B1 (ko) * 2018-12-13 2021-02-04 (주)와이솔 압전 박막 공진기
KR102080437B1 (ko) 2019-04-29 2020-02-21 씨제이대한통운 (주) 지하벽체 시공용 프레임 및 이를 이용한 지하구조물 시공방법
CN110417374B (zh) * 2019-08-27 2023-09-19 南方科技大学 一种薄膜体声波谐振器及其制备方法
KR20220037551A (ko) * 2020-09-17 2022-03-25 삼성전자주식회사 공진기 및 차동 증폭기를 포함하는 센서 인터페이스
CN112181208B (zh) * 2020-10-30 2023-06-02 业泓科技(成都)有限公司 触控辨识装置、显示装置及其制造方法
CN113258899B (zh) * 2021-05-18 2024-06-04 苏州汉天下电子有限公司 一种薄膜体声波谐振器及其制造方法
CN113556099B (zh) * 2021-06-11 2022-10-14 成都泰美克晶体技术有限公司 压电石英晶体振荡片、谐振器和振荡器

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JP3514207B2 (ja) 2000-03-15 2004-03-31 株式会社村田製作所 強誘電体薄膜素子ならびにセンサ、および強誘電体薄膜素子の製造方法
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US6521100B2 (en) * 2001-02-02 2003-02-18 Nokia Mobile Phones Ltd Method of producing a piezoelectric thin film and bulk acoustic wave resonator fabricated according to the method
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US7492241B2 (en) * 2005-06-02 2009-02-17 The Regents Of The University Of California Contour-mode piezoelectric micromechanical resonators

Also Published As

Publication number Publication date
EP1480335A3 (de) 2004-12-01
US7671427B2 (en) 2010-03-02
US7939356B2 (en) 2011-05-10
KR20040100348A (ko) 2004-12-02
KR100470708B1 (ko) 2005-03-10
EP1480335A2 (de) 2004-11-24
JP3985965B2 (ja) 2007-10-03
EP1480335B1 (de) 2009-11-11
JP2005033774A (ja) 2005-02-03
US20100132174A1 (en) 2010-06-03
US20050001274A1 (en) 2005-01-06

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