DE602004028430D1 - Halbleiter - Google Patents
HalbleiterInfo
- Publication number
- DE602004028430D1 DE602004028430D1 DE602004028430T DE602004028430T DE602004028430D1 DE 602004028430 D1 DE602004028430 D1 DE 602004028430D1 DE 602004028430 T DE602004028430 T DE 602004028430T DE 602004028430 T DE602004028430 T DE 602004028430T DE 602004028430 D1 DE602004028430 D1 DE 602004028430D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0237—Disposition of the redistribution layers
- H01L2224/02372—Disposition of the redistribution layers connecting to a via connection in the semiconductor or solid-state body
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/0401—Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
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- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
- H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
- H01L2224/11334—Manufacturing methods by local deposition of the material of the bump connector in solid form using preformed bumps
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- H01L2224/1147—Manufacturing methods using a lift-off mask
- H01L2224/1148—Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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- H01L2224/13099—Material
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2924/01004—Beryllium [Be]
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- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003147146A JP2004349593A (ja) | 2003-05-26 | 2003-05-26 | 半導体装置及びその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602004028430D1 true DE602004028430D1 (de) | 2010-09-16 |
Family
ID=33128189
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602004028430T Expired - Lifetime DE602004028430D1 (de) | 2003-05-26 | 2004-05-26 | Halbleiter |
Country Status (7)
Country | Link |
---|---|
US (1) | US7579671B2 (de) |
EP (1) | EP1482552B1 (de) |
JP (1) | JP2004349593A (de) |
KR (1) | KR100608184B1 (de) |
CN (2) | CN100370607C (de) |
DE (1) | DE602004028430D1 (de) |
TW (1) | TWI233189B (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4130158B2 (ja) | 2003-06-09 | 2008-08-06 | 三洋電機株式会社 | 半導体装置の製造方法、半導体装置 |
DE10356885B4 (de) | 2003-12-03 | 2005-11-03 | Schott Ag | Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement |
JP2006093367A (ja) * | 2004-09-24 | 2006-04-06 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
JP4708009B2 (ja) * | 2004-12-14 | 2011-06-22 | 株式会社フジクラ | 配線基板の製造方法 |
JP2007036060A (ja) * | 2005-07-28 | 2007-02-08 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP4745007B2 (ja) * | 2005-09-29 | 2011-08-10 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
JP2007311771A (ja) * | 2006-04-21 | 2007-11-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
KR100828027B1 (ko) * | 2006-06-28 | 2008-05-08 | 삼성전자주식회사 | 스택형 웨이퍼 레벨 패키지 및 그의 제조 방법, 및 웨이퍼레벨 스택 패키지 및 그의 제조 방법 |
JP5270349B2 (ja) * | 2006-08-25 | 2013-08-21 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 半導体装置及びその製造方法 |
WO2008023827A1 (fr) * | 2006-08-25 | 2008-02-28 | Sanyo Electric Co., Ltd. | Dispositif semi-conducteur |
US8212331B1 (en) * | 2006-10-02 | 2012-07-03 | Newport Fab, Llc | Method for fabricating a backside through-wafer via in a processed wafer and related structure |
KR100843240B1 (ko) * | 2007-03-23 | 2008-07-03 | 삼성전자주식회사 | 웨이퍼 레벨 스택을 위한 반도체 소자 및 웨이퍼 레벨스택을 위한 반도체 소자의 관통전극 형성방법 |
US7923645B1 (en) * | 2007-06-20 | 2011-04-12 | Amkor Technology, Inc. | Metal etch stop fabrication method and structure |
US8784636B2 (en) | 2007-12-04 | 2014-07-22 | Ebara Corporation | Plating apparatus and plating method |
JP5281831B2 (ja) * | 2008-06-30 | 2013-09-04 | 株式会社荏原製作所 | 導電材料構造体の形成方法 |
CN102473639B (zh) * | 2010-03-09 | 2017-09-15 | 伊文萨思公司 | 半导体装置的制造方法及半导体装置 |
US9293678B2 (en) | 2010-07-15 | 2016-03-22 | Micron Technology, Inc. | Solid-state light emitters having substrates with thermal and electrical conductivity enhancements and method of manufacture |
US8816505B2 (en) | 2011-07-29 | 2014-08-26 | Tessera, Inc. | Low stress vias |
US20130313710A1 (en) * | 2012-05-22 | 2013-11-28 | Micron Technology, Inc. | Semiconductor Constructions and Methods of Forming Semiconductor Constructions |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
JP6359444B2 (ja) * | 2014-12-25 | 2018-07-18 | 東京エレクトロン株式会社 | 配線層形成方法、配線層形成システムおよび記憶媒体 |
WO2017130381A1 (ja) * | 2016-01-29 | 2017-08-03 | 三菱電機株式会社 | 半導体装置 |
TWI623049B (zh) * | 2016-11-04 | 2018-05-01 | 英屬開曼群島商鳳凰先驅股份有限公司 | 封裝基板及其製作方法 |
JP6963396B2 (ja) * | 2017-02-28 | 2021-11-10 | キヤノン株式会社 | 電子部品の製造方法 |
KR102420586B1 (ko) * | 2017-07-24 | 2022-07-13 | 삼성전자주식회사 | 반도체 장치, 반도체 패키지 및 반도체 패키지의 제조 방법 |
JP2019160893A (ja) * | 2018-03-09 | 2019-09-19 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、半導体装置、電子機器、および製造方法 |
JP7279306B2 (ja) * | 2018-06-28 | 2023-05-23 | 凸版印刷株式会社 | 配線基板 |
US11217547B2 (en) * | 2019-09-03 | 2022-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Bond pad structure with reduced step height and increased electrical isolation |
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JPH0321859A (ja) | 1989-06-20 | 1991-01-30 | Nippondenso Co Ltd | 酸素センサー |
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JPH10303327A (ja) * | 1997-04-23 | 1998-11-13 | Yamaichi Electron Co Ltd | 半導体チップの接点変換構造と該接点変換構造を有する半導体チップの製造法 |
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KR100266698B1 (ko) * | 1998-06-12 | 2000-09-15 | 김영환 | 반도체 칩 패키지 및 그 제조방법 |
US6271059B1 (en) * | 1999-01-04 | 2001-08-07 | International Business Machines Corporation | Chip interconnection structure using stub terminals |
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-
2003
- 2003-05-26 JP JP2003147146A patent/JP2004349593A/ja active Pending
-
2004
- 2004-05-17 TW TW093113810A patent/TWI233189B/zh not_active IP Right Cessation
- 2004-05-24 US US10/851,638 patent/US7579671B2/en not_active Expired - Lifetime
- 2004-05-25 KR KR1020040037141A patent/KR100608184B1/ko not_active IP Right Cessation
- 2004-05-26 EP EP04012464A patent/EP1482552B1/de not_active Expired - Lifetime
- 2004-05-26 CN CNB2004100476315A patent/CN100370607C/zh not_active Expired - Fee Related
- 2004-05-26 DE DE602004028430T patent/DE602004028430D1/de not_active Expired - Lifetime
- 2004-05-26 CN CNA2007101619625A patent/CN101174600A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20050006783A1 (en) | 2005-01-13 |
US7579671B2 (en) | 2009-08-25 |
CN100370607C (zh) | 2008-02-20 |
EP1482552B1 (de) | 2010-08-04 |
KR100608184B1 (ko) | 2006-08-08 |
CN1574324A (zh) | 2005-02-02 |
EP1482552A3 (de) | 2007-03-21 |
JP2004349593A (ja) | 2004-12-09 |
TW200428608A (en) | 2004-12-16 |
CN101174600A (zh) | 2008-05-07 |
EP1482552A2 (de) | 2004-12-01 |
TWI233189B (en) | 2005-05-21 |
KR20040101924A (ko) | 2004-12-03 |
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