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DE602004000964D1 - Siloxanharz und daraus hergestellter Zwischenisolationsfilm - Google Patents

Siloxanharz und daraus hergestellter Zwischenisolationsfilm

Info

Publication number
DE602004000964D1
DE602004000964D1 DE200460000964 DE602004000964T DE602004000964D1 DE 602004000964 D1 DE602004000964 D1 DE 602004000964D1 DE 200460000964 DE200460000964 DE 200460000964 DE 602004000964 T DE602004000964 T DE 602004000964T DE 602004000964 D1 DE602004000964 D1 DE 602004000964D1
Authority
DE
Germany
Prior art keywords
film made
insulation film
made therefrom
siloxane resin
intermediate insulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE200460000964
Other languages
English (en)
Other versions
DE602004000964T2 (de
Inventor
Jin Heong Yim
Yi Yeol Lyu
Ki Yong Song
Hyun Dam Jeong
Joon Sung Ryu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004000964D1 publication Critical patent/DE602004000964D1/de
Application granted granted Critical
Publication of DE602004000964T2 publication Critical patent/DE602004000964T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE200460000964 2003-09-01 2004-08-20 Siloxanharz und daraus hergestellter Zwischenisolationsfilm Expired - Lifetime DE602004000964T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2003060811 2003-09-01
KR1020030060811A KR20050024721A (ko) 2003-09-01 2003-09-01 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막

Publications (2)

Publication Number Publication Date
DE602004000964D1 true DE602004000964D1 (de) 2006-06-29
DE602004000964T2 DE602004000964T2 (de) 2007-01-18

Family

ID=36580445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE200460000964 Expired - Lifetime DE602004000964T2 (de) 2003-09-01 2004-08-20 Siloxanharz und daraus hergestellter Zwischenisolationsfilm

Country Status (6)

Country Link
US (1) US7108922B2 (de)
EP (1) EP1510537B1 (de)
JP (1) JP4549781B2 (de)
KR (1) KR20050024721A (de)
CN (1) CN100455619C (de)
DE (1) DE602004000964T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4092220B2 (ja) * 2003-01-31 2008-05-28 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法
JP5105041B2 (ja) * 2004-01-16 2012-12-19 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP5110243B2 (ja) * 2004-01-16 2012-12-26 Ｊｓｒ株式会社 ポリマーの製造方法
JP2005272816A (ja) * 2004-02-26 2005-10-06 Jsr Corp ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
KR20070010011A (ko) * 2004-02-26 2007-01-19 제이에스알 가부시끼가이샤 중합체 및 그의 제조 방법, 절연막 형성용 조성물, 및절연막 및 그의 형성 방법
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
WO2005108469A1 (ja) * 2004-05-11 2005-11-17 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
US7947799B2 (en) * 2004-09-22 2011-05-24 Kai Manfred Martin Landskron High organic group content-periodic mesoporous organosilicas (HO-PMO's)
WO2007025566A1 (en) * 2005-09-01 2007-03-08 Freescale Semiconductor, Inc. Capping layer formation onto a dual damescene interconnect
WO2007087831A1 (en) * 2006-02-03 2007-08-09 Freescale Semiconductor, Inc. 'universal' barrier cmp slurry for use with low dielectric constant interlayer dielectrics
WO2007095973A1 (en) * 2006-02-24 2007-08-30 Freescale Semiconductor, Inc. Integrated system for semiconductor substrate processing using liquid phase metal deposition
JPWO2008096656A1 (ja) * 2007-02-07 2010-05-20 Jsr株式会社 ケイ素含有ポリマーおよびその合成方法、膜形成用組成物、ならびにシリカ系膜およびその形成方法
US8026035B2 (en) * 2007-03-30 2011-09-27 Cheil Industries, Inc. Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same
WO2009139462A1 (ja) * 2008-05-16 2009-11-19 日本電気株式会社 有機シリコン化合物およびシリカ系微粒子形成用材料
KR101290260B1 (ko) 2011-07-15 2013-07-26 주식회사 케이씨씨 알칼리 가용성 실리콘 수지, 이를 포함하는 실리콘 수지 조성물 및 그 제조방법
KR101393695B1 (ko) * 2012-03-14 2014-05-13 명지대학교 산학협력단 반도체 소자용 절연막 재료 및 이를 사용한 절연막의 제조방법
KR101599954B1 (ko) 2013-08-08 2016-03-04 제일모직 주식회사 실리카계 절연층 형성용 조성물, 실리카계 절연층 및 실리카계 절연층의 제조방법
US10316216B2 (en) * 2016-08-31 2019-06-11 Samsung Sdi Co., Ltd. Composition for forming silica layer, and silica layer
US10973908B1 (en) 2020-05-14 2021-04-13 David Gordon Bermudes Expression of SARS-CoV-2 spike protein receptor binding domain in attenuated salmonella as a vaccine
CN115449291B (zh) * 2021-06-09 2023-07-07 荣耀终端有限公司 防水绝缘涂料及其应用

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2590937A (en) * 1950-05-01 1952-04-01 Dow Corning Organosilicon resins
GB1043144A (en) * 1963-09-18 1966-09-21 Ici Ltd Disilmethylenes and siloxanes prepared therefrom
US3615272A (en) 1968-11-04 1971-10-26 Dow Corning Condensed soluble hydrogensilsesquioxane resin
DE3173441D1 (en) 1980-08-26 1986-02-20 Japan Synthetic Rubber Co Ltd Ladder-like lower alkylpolysilsesquioxanes and process for their preparation
JPS58171416A (ja) * 1982-04-02 1983-10-08 Hitachi Ltd 耐熱性重合体
JPS6169836A (ja) * 1984-09-12 1986-04-10 Chisso Corp けい素含有ステツプラダ−ポリマ−及びその製造方法
US4756977A (en) 1986-12-03 1988-07-12 Dow Corning Corporation Multilayer ceramics from hydrogen silsesquioxane
JPH0791308B2 (ja) * 1989-06-20 1995-10-04 信越化学工業株式会社 トリアルキルシリルメチル基含有シラン化合物
US4999397A (en) 1989-07-28 1991-03-12 Dow Corning Corporation Metastable silane hydrolyzates and process for their preparation
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
JP2527379B2 (ja) * 1990-06-26 1996-08-21 信越化学工業株式会社 プライマ―組成物
KR940007416B1 (en) * 1991-01-22 1994-08-18 Korea Inst Sci & Tech Process for the preparation of silaalkane
KR940007325B1 (ko) * 1991-02-25 1994-08-13 한국과학기술연구원 폴리실라메틸레노실란 중합체의 제조방법
KR940007414B1 (ko) * 1991-06-14 1994-08-18 한국과학기술연구원 1,3-디실라시클로부탄 유도체 및 그 제조방법
JP2795135B2 (ja) * 1993-06-07 1998-09-10 信越化学工業株式会社 オルガノアルコキシシラン化合物の製造方法
JPH0812762A (ja) * 1994-06-29 1996-01-16 Toray Dow Corning Silicone Co Ltd 含フッ素有機ケイ素重合体およびその製造方法
WO1996000758A1 (fr) 1994-06-30 1996-01-11 Hitachi Chemical Company, Ltd. Matiere pour la formation d'une couche mince isolante revetue a base de silice, son procede de fabrication, couche isolante a base de silice, dispositif a semi-conducteurs, et procede de fabrication de ce dispositif
JPH08217879A (ja) * 1995-02-15 1996-08-27 Mitsubishi Rayon Co Ltd 耐熱性樹脂およびその製造方法
JPH11512474A (ja) 1995-09-12 1999-10-26 ゲレスト インコーポレーテツド ベータ−置換オルガノシルセスキオキサンおよびその使用法
ATE280806T1 (de) 1997-07-15 2004-11-15 Asahi Chemical Ind Zusammensetzungen aus alkoxysilan und organischem polymer zur herstellung von dünnen isolierenden schichten und deren verwendung
JPH11209474A (ja) * 1998-01-19 1999-08-03 Shin Etsu Chem Co Ltd ケイ素系高分子化合物の製造方法
JP2000038545A (ja) * 1998-05-18 2000-02-08 Jsr Corp 膜形成用組成物、膜の形成方法および低密度膜
JPH11322992A (ja) * 1998-05-18 1999-11-26 Jsr Corp 多孔質膜
US6087521A (en) * 1999-05-17 2000-07-11 Jung; Il Nam Silicon compounds containing silamethylene bonds and method for their preparation
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
JP2001040283A (ja) * 1999-07-29 2001-02-13 Jsr Corp 膜形成用組成物の製造方法、膜形成用組成物および絶縁膜形成用材料
CA2382041C (en) * 1999-08-20 2010-04-13 Bayer Aktiengesellschaft Inorganic coating composition, a method for producing same and the use thereof
US6232424B1 (en) 1999-12-13 2001-05-15 Dow Corning Corporation Soluble silicone resin compositions having good solution stability
JP3793461B2 (ja) * 1999-10-28 2006-07-05 独立行政法人科学技術振興機構 シルアルキレンシロキサンの重合方法
DE10031764A1 (de) * 2000-06-29 2002-01-10 Bayer Ag Verfahren zur Herstellung von Sol- Gel-Kompositionen mit verringertem Lösungsmittelgehalt und verbesserter Lagerstabilität und deren Verwendung
KR100382702B1 (ko) * 2000-09-18 2003-05-09 주식회사 엘지화학 유기실리케이트 중합체의 제조방법
KR100343938B1 (en) * 2000-11-29 2002-07-20 Samsung Electronics Co Ltd Preparation method of interlayer insulation membrane of semiconductor
EP1245642B1 (de) * 2001-03-27 2005-06-08 Samsung Electronics Co., Ltd. Polysiloxanharz und Verfahren zur Herstellung einer Zwischenschicht daraus für Wafer
EP1245628B1 (de) * 2001-03-27 2008-08-27 Samsung Electronics Co., Ltd. Zusammensetzung zur Herstellung von Stoffen mit Nanoporen
GB2384100B (en) 2002-01-09 2005-10-26 Seiko Epson Corp An electronic circuit for controlling the current supply to an element
JPWO2003066750A1 (ja) * 2002-02-06 2005-06-02 旭化成株式会社 絶縁薄膜製造用塗布組成物
WO2003087228A1 (fr) * 2002-04-12 2003-10-23 Clariant International Ltd. Composition de copolymere contenant du silicium, copolymere contenant du silicium reticule soluble dans un solvant, et articles durcis obtenus a partir de ladite composition
KR100507967B1 (ko) * 2003-07-01 2005-08-10 삼성전자주식회사 실록산계 수지 및 이를 이용한 반도체 층간 절연막

Also Published As

Publication number Publication date
US7108922B2 (en) 2006-09-19
US20050049382A1 (en) 2005-03-03
EP1510537A1 (de) 2005-03-02
CN100455619C (zh) 2009-01-28
DE602004000964T2 (de) 2007-01-18
CN1597738A (zh) 2005-03-23
JP2005076031A (ja) 2005-03-24
KR20050024721A (ko) 2005-03-11
JP4549781B2 (ja) 2010-09-22
EP1510537B1 (de) 2006-05-24

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