DE4442067B8 - Programmierbare Permanentspeicherzelle - Google Patents

Programmierbare Permanentspeicherzelle Download PDF

Info

Publication number: DE4442067B8
Authority: DE; Germany
Prior art keywords: memory cell; permanent memory; programmable permanent; programmable; cell
Prior art date: 1993-11-25
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE4442067A

Other languages

English (en)

Other versions

DE4442067B4 (de

DE4442067A1 (de

Inventor

Makio Ichinomiya Iida

Tetsuo Toyohashi Fujii

Yoshihiko Toyoake Isobe

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Denso Corp

Original Assignee

Denso Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-11-25

Filing date

1994-11-25

Publication date

2008-04-17

1994-11-25 Application filed by Denso Corp filed Critical Denso Corp

1995-06-01 Publication of DE4442067A1 publication Critical patent/DE4442067A1/de

2008-01-10 Publication of DE4442067B4 publication Critical patent/DE4442067B4/de

2008-04-17 Application granted granted Critical

2008-04-17 Publication of DE4442067B8 publication Critical patent/DE4442067B8/de

2014-11-26 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
- H10B41/42—Simultaneous manufacture of periphery and memory cells

Landscapes

Engineering & Computer Science (AREA)
Manufacturing & Machinery (AREA)
Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)

DE4442067A 1993-11-25 1994-11-25 Programmierbare Permanentspeicherzelle Expired - Fee Related DE4442067B8 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JPP5-295475		1993-11-25
JP29547593A JP3344598B2 (ja)	1993-11-25	1993-11-25	半導体不揮発メモリ装置

Publications (3)

Publication Number	Publication Date
DE4442067A1 DE4442067A1 (de)	1995-06-01
DE4442067B4 DE4442067B4 (de)	2008-01-10
DE4442067B8 true DE4442067B8 (de)	2008-04-17

Family

ID=17821086

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE4442067A Expired - Fee Related DE4442067B8 (de)	1993-11-25	1994-11-25	Programmierbare Permanentspeicherzelle

Country Status (3)

Country	Link
US (1)	US5747846A (de)
JP (1)	JP3344598B2 (de)
DE (1)	DE4442067B8 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5877054A (en) *	1995-06-29	1999-03-02	Sharp Kabushiki Kaisha	Method of making nonvolatile semiconductor memory
EP0752721B1 (de)	1995-06-29	2009-04-29	Sharp Kabushiki Kaisha	Nichtflüchtiger Halbleiterspeicher und Verfahren zur Steuerung und Verfahren zu seiner Herstellung
JP4659662B2 (ja) *	1997-04-28	2011-03-30	ペグレ・セミコンダクターズ・リミテッド・ライアビリティ・カンパニー	半導体装置及びその製造方法
JPH1187664A (ja)	1997-04-28	1999-03-30	Nippon Steel Corp	半導体装置及びその製造方法
US7602007B2 (en)	1997-04-28	2009-10-13	Yoshihiro Kumazaki	Semiconductor device having controllable transistor threshold voltage
JP4032454B2 (ja) *	1997-06-27	2008-01-16	ソニー株式会社	三次元回路素子の製造方法
US5929478A (en) *	1997-07-02	1999-07-27	Motorola, Inc.	Single level gate nonvolatile memory device and method for accessing the same
US6180492B1 (en) *	1999-01-25	2001-01-30	United Microelectronics Corp.	Method of forming a liner for shallow trench isolation
US6627954B1 (en) *	1999-03-19	2003-09-30	Silicon Wave, Inc.	Integrated circuit capacitor in a silicon-on-insulator integrated circuit
WO2001022493A1 (en) *	1999-09-23	2001-03-29	C.P. Clare Corporation	Integrated high voltage capacitive coupling circuit using bonded and trenched isolated wafer technology
KR100358068B1 (ko) *	1999-12-28	2002-10-25	주식회사 하이닉스반도체	플래쉬 메모리 소자의 제조방법
JP2001339071A (ja) *	2000-03-22	2001-12-07	Mitsubishi Electric Corp	半導体装置及びその製造方法
US6888750B2 (en) *	2000-04-28	2005-05-03	Matrix Semiconductor, Inc.	Nonvolatile memory on SOI and compound semiconductor substrates and method of fabrication
JP4281331B2 (ja)	2002-01-21	2009-06-17	株式会社デンソー	不揮発性半導体記憶装置
JP4262933B2 (ja) *	2002-05-30	2009-05-13	Ｎｅｃエレクトロニクス株式会社	高周波回路素子
US7052959B2 (en) *	2004-01-08	2006-05-30	Semiconductor Components Industries, Llc	Method of forming an EPROM cell and structure therefor
JP4908901B2 (ja) *	2006-04-11	2012-04-04	ラピスセミコンダクタ株式会社	不揮発性メモリの製造方法
JP2007287795A (ja) *	2006-04-13	2007-11-01	Renesas Technology Corp	不揮発性半導体記憶装置
US20080108212A1 (en) *	2006-10-19	2008-05-08	Atmel Corporation	High voltage vertically oriented eeprom device
JP5068057B2 (ja) *	2006-10-19	2012-11-07	三菱電機株式会社	半導体装置
US7863709B1 (en) *	2007-04-16	2011-01-04	Marvell International Ltd.	Low base resistance bipolar junction transistor array
US20100006912A1 (en) *	2008-07-14	2010-01-14	Honeywell International Inc.	Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
US20100200918A1 (en) *	2009-02-10	2010-08-12	Honeywell International Inc.	Heavy Ion Upset Hardened Floating Body SRAM Cells
JP7242285B2 (ja) *	2018-12-19	2023-03-20	キオクシア株式会社	半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4019197A (en) *	1975-01-17	1977-04-19	U.S. Philips Corporation	Semiconductor floating gate storage device with lateral electrode system
US4404577A (en) *	1980-06-30	1983-09-13	International Business Machines Corp.	Electrically alterable read only memory cell
US4924278A (en) *	1987-06-19	1990-05-08	Advanced Micro Devices, Inc.	EEPROM using a merged source and control gate
US4970565A (en) *	1988-09-01	1990-11-13	Atmel Corporation	Sealed charge storage structure
JPH04212471A (ja) *	1990-07-12	1992-08-04	Hitachi Ltd	半導体集積回路装置
US5223731A (en) *	1988-06-30	1993-06-29	Goldstar Electron Co., Ltd.	EPROM cell using trench isolation to provide leak current immunity
US5307312A (en) *	1990-07-24	1994-04-26	Sgs-Thomson Microelectronics S.R.L.	Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4223731A (en) *	1978-11-24	1980-09-23	Texaco Inc.	Method for enhanced recovery of petroleum
US4616245A (en) *	1984-10-29	1986-10-07	Ncr Corporation	Direct-write silicon nitride EEPROM cell
JP2788269B2 (ja) *	1988-02-08	1998-08-20	株式会社東芝	半導体装置およびその製造方法
JPH0297056A (ja) *	1988-10-03	1990-04-09	Ricoh Co Ltd	半導体装置
US5078498A (en) *	1990-06-29	1992-01-07	Texas Instruments Incorporated	Two-transistor programmable memory cell with a vertical floating gate transistor
US5086325A (en) *	1990-11-21	1992-02-04	Atmel Corporation	Narrow width EEPROM with single diffusion electrode formation
US5355330A (en) *	1991-08-29	1994-10-11	Hitachi, Ltd.	Capacitive memory having a PN junction writing and tunneling through an insulator of a charge holding electrode
JPH05211307A (ja) *	1991-12-12	1993-08-20	Tdk Corp	不揮発性メモリセル

1993
- 1993-11-25 JP JP29547593A patent/JP3344598B2/ja not_active Expired - Lifetime
1994
- 1994-11-23 US US08/346,287 patent/US5747846A/en not_active Expired - Lifetime
- 1994-11-25 DE DE4442067A patent/DE4442067B8/de not_active Expired - Fee Related

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4019197A (en) *	1975-01-17	1977-04-19	U.S. Philips Corporation	Semiconductor floating gate storage device with lateral electrode system
US4404577A (en) *	1980-06-30	1983-09-13	International Business Machines Corp.	Electrically alterable read only memory cell
US4924278A (en) *	1987-06-19	1990-05-08	Advanced Micro Devices, Inc.	EEPROM using a merged source and control gate
US5223731A (en) *	1988-06-30	1993-06-29	Goldstar Electron Co., Ltd.	EPROM cell using trench isolation to provide leak current immunity
US4970565A (en) *	1988-09-01	1990-11-13	Atmel Corporation	Sealed charge storage structure
JPH04212471A (ja) *	1990-07-12	1992-08-04	Hitachi Ltd	半導体集積回路装置
US5457335A (en) *	1990-07-12	1995-10-10	Hitachi, Ltd.	Floating gate FET with hydrogen barrier shield
US5307312A (en) *	1990-07-24	1994-04-26	Sgs-Thomson Microelectronics S.R.L.	Process for obtaining an N-channel single polysilicon level EPROM cell and cell obtained with said process

Also Published As

Publication number	Publication date
DE4442067B4 (de)	2008-01-10
US5747846A (en)	1998-05-05
JP3344598B2 (ja)	2002-11-11
DE4442067A1 (de)	1995-06-01
JPH07147340A (ja)	1995-06-06

Publication	Publication Date	Title
DE4442067B8 (de)	2008-04-17	Programmierbare Permanentspeicherzelle
DE69316628D1 (de)	1998-02-26	Flüchtige Speicherzelle
BG97381A (bg)	1993-12-24	Еднобитова запомняща клетка
DE69434679D1 (de)	2006-05-18	Elektrisch programmierbare Festwertspeicheranordnung
DE69524645D1 (de)	2002-01-31	Speicherzelle mit programmierbarer Antischmelzsicherungstechnologie
DE59804824D1 (de)	2002-08-22	Speicherzellenanordnung
NO954747L (no)	1996-01-11	Spinncelle
DE69528329D1 (de)	2002-10-31	EEPROM-Speicherzelle
DE59509657D1 (de)	2001-11-08	Programmierbarer Halbleiterspeicher
DE59010020D1 (de)	1996-02-15	Statische Speicherzelle
DE69324902D1 (de)	1999-06-17	Speicherelement
DE69411406D1 (de)	1998-08-13	Stromspeicher
DE69531141D1 (de)	2003-07-31	Einseitige Zweitorspeicherzelle
DE69418521D1 (de)	1999-06-24	Nichtflüchtige Speicheranordnung
DE19580583T1 (de)	1997-05-22	Pseudo-statische Vier-Transistor-Speicherzelle
DE69509581D1 (de)	1999-06-17	Elektrisch programmierbare Speicherzelle
DE69422453D1 (de)	2000-02-10	Doppelzugriffspeicher
DE69419339D1 (de)	1999-08-12	Nichtflüchtige Speicheranordnung
DE69803215D1 (de)	2002-02-21	Programmierbare speicherzelle
DE69307398D1 (de)	1997-02-27	Programmierbare logische Zelle
DE69417077D1 (de)	1999-04-22	Festwertspeicher
DE69316298D1 (de)	1998-02-19	Nichtflüchtige Speicherzelle
DE69403700D1 (de)	1997-07-17	Kontinuierliches Speicherzelleladegerät
DE69502981D1 (de)	1998-07-23	Lagereinrichtung
DE69417994D1 (de)	1999-05-27	Speicheranordnung

Legal Events

Date	Code	Title	Description
1997-05-28	8127	New person/name/address of the applicant	Owner name: DENSO CORP., KARIYA, AICHI, JP
2001-04-12	8110	Request for examination paragraph 44
2001-04-12	8128	New person/name/address of the agent	Representative=s name: WINTER, BRANDL, FUERNISS, HUEBNER, ROESS, KAISER,
2008-04-17	8396	Reprint of erroneous front page
2008-07-03	8364	No opposition during term of opposition
2011-06-10	R084	Declaration of willingness to licence
2014-08-28	R119	Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee	Effective date: 20140603