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DE3910449A1 - Wafer aus halbleitermaterial - Google Patents

Wafer aus halbleitermaterial

Info

Publication number
DE3910449A1
DE3910449A1 DE3910449A DE3910449A DE3910449A1 DE 3910449 A1 DE3910449 A1 DE 3910449A1 DE 3910449 A DE3910449 A DE 3910449A DE 3910449 A DE3910449 A DE 3910449A DE 3910449 A1 DE3910449 A1 DE 3910449A1
Authority
DE
Germany
Prior art keywords
atoms
oxygen concentration
less
decrease
approximately
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE3910449A
Other languages
German (de)
English (en)
Inventor
Osamu Suzuki
Seiji Kurihara
Takashi Araki
Hitoshi Kusaka
Shoichi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of DE3910449A1 publication Critical patent/DE3910449A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE3910449A 1988-07-14 1989-03-31 Wafer aus halbleitermaterial Withdrawn DE3910449A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63176089A JPH0226031A (ja) 1988-07-14 1988-07-14 シリコンウェーハ

Publications (1)

Publication Number Publication Date
DE3910449A1 true DE3910449A1 (de) 1990-01-18

Family

ID=16007517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3910449A Withdrawn DE3910449A1 (de) 1988-07-14 1989-03-31 Wafer aus halbleitermaterial

Country Status (3)

Country Link
JP (1) JPH0226031A (ja)
KR (1) KR900002404A (ja)
DE (1) DE3910449A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419044A1 (en) * 1989-08-23 1991-03-27 Shin-Etsu Handotai Company, Limited Single crystal silicon
DE4330598C2 (de) * 1992-09-10 2002-10-24 Hemlock Semiconductor Corp Verfahren zur Analyse von Verunreinigungen bei Siliciumbrocken

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593494A (en) * 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
KR20020092040A (ko) * 2001-06-01 2002-12-11 송호봉 멤브레인 프레스장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1515971A (en) * 1975-05-27 1978-06-28 Ibm Growing silicon crystals
DD265916A1 (de) * 1987-11-10 1989-03-15 Freiberg Spurenmetalle Veb Verfahren zur zuechtung von hochreinen siliciumeinkristallen

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118647A (en) * 1981-01-14 1982-07-23 Fujitsu Ltd Manufacture of semiconductor device
JPS60137892A (ja) * 1983-12-26 1985-07-22 Toshiba Ceramics Co Ltd 石英ガラスルツボ
JPS6212692A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 単結晶半導体の成長方法
JPH085739B2 (ja) * 1986-12-26 1996-01-24 東芝セラミツクス株式会社 石英ガラスルツボの製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1515971A (en) * 1975-05-27 1978-06-28 Ibm Growing silicon crystals
DD265916A1 (de) * 1987-11-10 1989-03-15 Freiberg Spurenmetalle Veb Verfahren zur zuechtung von hochreinen siliciumeinkristallen

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Appl. Phys. Lett. 52, 10, März 1988, S. 836, 837 *
Japanese Journal of Applied Physics, Vol. 28, No. 12, 1989, S. 2413-2420 *
JP 59-2 17 700 A. In: Patents Abstracts of Japan, Sect. C, Vol. 9, 1985, Nr. 88, C-276 *
JP 63-1 66 791 A. In: Patents Abstracts of Japan, Sect. C, Vol. 12, 1988, Nr. 444, C-545 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0419044A1 (en) * 1989-08-23 1991-03-27 Shin-Etsu Handotai Company, Limited Single crystal silicon
US5067989A (en) * 1989-08-23 1991-11-26 Shin Etsu Handotai Co., Ltd. Single crystal silicon
DE4330598C2 (de) * 1992-09-10 2002-10-24 Hemlock Semiconductor Corp Verfahren zur Analyse von Verunreinigungen bei Siliciumbrocken

Also Published As

Publication number Publication date
JPH0226031A (ja) 1990-01-29
KR900002404A (ko) 1990-02-28

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8130 Withdrawal