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DE3883873D1 - Trägerelement für Halbleiterapparat. - Google Patents

Trägerelement für Halbleiterapparat.

Info

Publication number
DE3883873D1
DE3883873D1 DE88110306T DE3883873T DE3883873D1 DE 3883873 D1 DE3883873 D1 DE 3883873D1 DE 88110306 T DE88110306 T DE 88110306T DE 3883873 T DE3883873 T DE 3883873T DE 3883873 D1 DE3883873 D1 DE 3883873D1
Authority
DE
Germany
Prior art keywords
carrier element
semiconductor apparatus
semiconductor
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE88110306T
Other languages
English (en)
Other versions
DE3883873T2 (de
Inventor
Akira Itami Works Of Su Sasame
Hitoyuki Sakanoue
Masaya Itami Works Of S Miyake
Akira Itami Works Of Yamakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE3883873D1 publication Critical patent/DE3883873D1/de
Application granted granted Critical
Publication of DE3883873T2 publication Critical patent/DE3883873T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12033—Gunn diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE88110306T 1987-06-30 1988-06-28 Trägerelement für Halbleiterapparat. Expired - Lifetime DE3883873T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP16283887 1987-06-30
JP16284187 1987-06-30
JP16284087 1987-06-30
JP16283987 1987-06-30

Publications (2)

Publication Number Publication Date
DE3883873D1 true DE3883873D1 (de) 1993-10-14
DE3883873T2 DE3883873T2 (de) 1994-01-05

Family

ID=27473832

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88110306T Expired - Lifetime DE3883873T2 (de) 1987-06-30 1988-06-28 Trägerelement für Halbleiterapparat.

Country Status (5)

Country Link
US (1) US4965659A (de)
EP (1) EP0297512B1 (de)
KR (1) KR910007096B1 (de)
CA (1) CA1303248C (de)
DE (1) DE3883873T2 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5529852A (en) * 1987-01-26 1996-06-25 Sumitomo Electric Industries, Ltd. Aluminum nitride sintered body having a metallized coating layer on its surface
CA1284536C (en) * 1987-07-03 1991-05-28 Akira Sasame Member for semiconductor apparatus
US5264388A (en) * 1988-05-16 1993-11-23 Sumitomo Electric Industries, Inc. Sintered body of aluminum nitride
US5126830A (en) * 1989-10-31 1992-06-30 General Electric Company Cryogenic semiconductor power devices
US5292552A (en) * 1989-12-20 1994-03-08 Sumitomo Electric Industries, Ltd. Method for forming metallized layer on an aluminum nitride sintered body
US5370907A (en) * 1990-06-15 1994-12-06 Sumitomo Electric Industries, Ltd. Forming a metallized layer on an AlN substrate by applying and heating a paste of a metal composed of W and Mo
DE69131784T2 (de) * 1990-07-21 2000-05-18 Mitsui Chemicals, Inc. Halbleiteranordnung mit einer Packung
US5200249A (en) * 1990-08-15 1993-04-06 W. R. Grace & Co.-Conn. Via metallization for AlN ceramic electronic package
JP2505065B2 (ja) * 1990-10-04 1996-06-05 三菱電機株式会社 半導体装置およびその製造方法
US5105258A (en) * 1990-11-21 1992-04-14 Motorola, Inc. Metal system for semiconductor die attach
US5459348A (en) * 1991-05-24 1995-10-17 Astec International, Ltd. Heat sink and electromagnetic interference shield assembly
US5972737A (en) * 1993-04-14 1999-10-26 Frank J. Polese Heat-dissipating package for microcircuit devices and process for manufacture
US5886407A (en) * 1993-04-14 1999-03-23 Frank J. Polese Heat-dissipating package for microcircuit devices
US5397746A (en) * 1993-11-03 1995-03-14 Intel Corporation Quad flat package heat slug composition
JP2625368B2 (ja) * 1993-12-16 1997-07-02 日本電気株式会社 半導体基板
JP2642858B2 (ja) * 1993-12-20 1997-08-20 日本碍子株式会社 セラミックスヒーター及び加熱装置
JPH0945815A (ja) * 1995-08-03 1997-02-14 Sumitomo Electric Ind Ltd 半導体用パッケージ、該パッケージ用板状部材及びその製造方法
US6783867B2 (en) * 1996-02-05 2004-08-31 Sumitomo Electric Industries, Ltd. Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same
US5640045A (en) * 1996-02-06 1997-06-17 Directed Energy, Inc. Thermal stress minimization in power semiconductor devices
US6197435B1 (en) 1997-11-07 2001-03-06 Denki Kagaku Kogyo Kabushiki Kaisha Substrate
JP4666337B2 (ja) * 2001-05-24 2011-04-06 フライズ メタルズ インコーポレイテッド 熱界面材およびヒートシンク配置
JP2006302713A (ja) * 2005-04-21 2006-11-02 Koito Mfg Co Ltd 車両用前照灯
US7365988B2 (en) * 2005-11-04 2008-04-29 Graftech International Holdings Inc. Cycling LED heat spreader
US8373195B2 (en) 2006-04-12 2013-02-12 SemiLEDs Optoelectronics Co., Ltd. Light-emitting diode lamp with low thermal resistance
US7863639B2 (en) * 2006-04-12 2011-01-04 Semileds Optoelectronics Co. Ltd. Light-emitting diode lamp with low thermal resistance
JP2007305962A (ja) * 2006-05-12 2007-11-22 Honda Motor Co Ltd パワー半導体モジュール
JP2008016362A (ja) * 2006-07-07 2008-01-24 Koito Mfg Co Ltd 発光モジュール及び車輌用灯具
DE102008055137A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
DE102008055134A1 (de) * 2008-12-23 2010-07-01 Robert Bosch Gmbh Elektrisches oder elektronisches Verbundbauteil sowie Verfahren zum Herstellen eines elektrischen oder elektronischen Verbundbauteils
WO2013094755A1 (ja) 2011-12-22 2013-06-27 京セラ株式会社 配線基板および電子装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2431900A1 (fr) * 1978-07-25 1980-02-22 Thomson Csf Systeme de soudure d'un laser a semiconducteur sur un socle metallique
JPS5848926A (ja) * 1981-09-18 1983-03-23 Hitachi Ltd 絶縁型半導体装置
JPS5921032A (ja) * 1982-07-26 1984-02-02 Sumitomo Electric Ind Ltd 半導体装置用基板
JPS59114846A (ja) * 1982-12-21 1984-07-03 Narumi China Corp 半導体塔載用セラミツクパツケ−ジ
JPH0810710B2 (ja) * 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
DE3523061A1 (de) * 1985-06-27 1987-01-02 Siemens Ag Halbleiter-chip-anordnung
JPS6265991A (ja) * 1985-09-13 1987-03-25 株式会社東芝 高熱伝導性セラミツクス基板

Also Published As

Publication number Publication date
EP0297512A2 (de) 1989-01-04
EP0297512B1 (de) 1993-09-08
EP0297512A3 (en) 1990-07-04
DE3883873T2 (de) 1994-01-05
KR910007096B1 (ko) 1991-09-18
US4965659A (en) 1990-10-23
KR890001159A (ko) 1989-03-18
CA1303248C (en) 1992-06-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN

8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: GROSSE, SCHUMACHER, KNAUER, VON HIRSCHHAUSEN, 8033