DE3882565D1 - Bipolartransistor. - Google Patents

Bipolartransistor.

Info

Publication number: DE3882565D1
Authority: DE; Germany
Prior art keywords: bipolar transistor; bipolar; transistor
Prior art date: 1987-04-10
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE8888105630T

Other languages

English (en)

Other versions

DE3882565T2 (de

Inventor

Akio Kayanuma

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1987-04-10

Filing date

1988-04-08

Publication date

1993-09-02

1988-04-08 Application filed by Sony Corp filed Critical Sony Corp

1993-09-02 Application granted granted Critical

1993-09-02 Publication of DE3882565D1 publication Critical patent/DE3882565D1/de

1994-02-24 Publication of DE3882565T2 publication Critical patent/DE3882565T2/de

2008-04-09 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7322—Vertical transistors having emitter-base and base-collector junctions leaving at the same surface of the body, e.g. planar transistor

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Bipolar Transistors (AREA)

DE88105630T 1987-04-10 1988-04-08 Bipolartransistor. Expired - Lifetime DE3882565T2 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP62088353A JPS63253664A (ja)	1987-04-10	1987-04-10	バイポ−ラトランジスタ

Publications (2)

Publication Number	Publication Date
DE3882565D1 true DE3882565D1 (de)	1993-09-02
DE3882565T2 DE3882565T2 (de)	1994-02-24

Family

ID=13940455

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE88105630T Expired - Lifetime DE3882565T2 (de)	1987-04-10	1988-04-08	Bipolartransistor.

Country Status (6)

Country	Link
US (1)	US4984053A (de)
EP (1)	EP0286117B1 (de)
JP (1)	JPS63253664A (de)
KR (1)	KR0118111B1 (de)
CA (1)	CA1307357C (de)
DE (1)	DE3882565T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2579999B2 (ja) *	1988-05-13	1997-02-12	株式会社日立製作所	半導体装置の製造方法
US5468989A (en) *	1988-06-02	1995-11-21	Hitachi, Ltd.	Semiconductor integrated circuit device having an improved vertical bipolar transistor structure
JP2861006B2 (ja) *	1988-12-08	1999-02-24	ソニー株式会社	バイポーラトランジスタの製造方法
EP0391483B1 (de) *	1989-04-05	1997-12-10	Koninklijke Philips Electronics N.V.	Halbleiteranordnung mit einem Kollektorbereich, einem Basisbereich und einem Emitterbereich, und Verfahren zu deren Herstellung
US5221856A (en) *	1989-04-05	1993-06-22	U.S. Philips Corp.	Bipolar transistor with floating guard region under extrinsic base
US5410175A (en) *	1989-08-31	1995-04-25	Hamamatsu Photonics K.K.	Monolithic IC having pin photodiode and an electrically active element accommodated on the same semi-conductor substrate
JP2746289B2 (ja) *	1989-09-09	1998-05-06	忠弘大見	素子の作製方法並びに半導体素子およびその作製方法
JP2825169B2 (ja) *	1990-09-17	1998-11-18	キヤノン株式会社	半導体装置
US5302535A (en) *	1991-09-20	1994-04-12	Nec Corporation	Method of manufacturing high speed bipolar transistor
JPH0831841A (ja)	1994-07-12	1996-02-02	Sony Corp	半導体装置及びその製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
USRE27045E (en) *	1963-11-08	1971-02-02		Transistor with limited area base-collector junction
US4003072A (en) *	1972-04-20	1977-01-11	Sony Corporation	Semiconductor device with high voltage breakdown resistance
NL185484C (nl) *	1975-04-28	1990-04-17	Philips Nv	Halfgeleiderinrichting met een halfgeleiderlichaam bevattende tenminste een transistor.
US4153904A (en) *	1977-10-03	1979-05-08	Texas Instruments Incorporated	Semiconductor device having a high breakdown voltage junction characteristic
CA1131801A (en) *	1978-01-18	1982-09-14	Johannes A. Appels	Semiconductor device
US4868624A (en) *	1980-05-09	1989-09-19	Regents Of The University Of Minnesota	Channel collector transistor
JPS57201062A (en) *	1981-06-05	1982-12-09	Nec Corp	Semiconductor device
NL8302092A (nl) *	1983-06-13	1985-01-02	Philips Nv	Halfgeleiderinrichting bevattende een veldeffekttransistor.
JPS60247940A (ja) *	1984-05-23	1985-12-07	Hitachi Ltd	半導体装置およびその製造方法
JPS6146063A (ja) *	1984-08-10	1986-03-06	Hitachi Ltd	半導体装置の製造方法
JPH0622238B2 (ja) *	1985-10-02	1994-03-23	沖電気工業株式会社	バイポ−ラ型半導体集積回路装置の製造方法

1987
- 1987-04-10 JP JP62088353A patent/JPS63253664A/ja active Pending
1988
- 1988-03-09 KR KR1019880002429A patent/KR0118111B1/ko not_active IP Right Cessation
- 1988-03-30 US US07/175,263 patent/US4984053A/en not_active Expired - Lifetime
- 1988-03-30 CA CA000562891A patent/CA1307357C/en not_active Expired - Lifetime
- 1988-04-08 DE DE88105630T patent/DE3882565T2/de not_active Expired - Lifetime
- 1988-04-08 EP EP88105630A patent/EP0286117B1/de not_active Expired - Lifetime

Also Published As

Publication number	Publication date
KR880013255A (ko)	1988-11-30
EP0286117B1 (de)	1993-07-28
JPS63253664A (ja)	1988-10-20
DE3882565T2 (de)	1994-02-24
EP0286117A1 (de)	1988-10-12
US4984053A (en)	1991-01-08
KR0118111B1 (ko)	1997-09-30
CA1307357C (en)	1992-09-08

Publication	Publication Date	Title
DE3751972D1 (de)	1997-01-16	Bipolarer Transistor
DE3768854D1 (de)	1991-05-02	Lateraltransistor.
DE3583119D1 (de)	1991-07-11	Bipolartransistor mit heterouebergang.
DE3788525D1 (de)	1994-02-03	Feldeffekttransistoranordnungen.
DE3851079D1 (de)	1994-09-22	Vernetzbare Kunststoff-Zusammensetzung.
DE3775647D1 (de)	1992-02-13	Uv-strahler.
DE3884292D1 (de)	1993-10-28	Bipolarer Transistor mit Heteroübergang.
DE69127849D1 (de)	1997-11-13	Bipolarer Transistor
DE3854677D1 (de)	1995-12-21	Komplementäre Feldeffekttransistorstruktur.
DE3888085D1 (de)	1994-04-07	Bipolartransistor mit Heteroübergang.
DE3751098D1 (de)	1995-04-06	Feldeffekttransistor.
DE3887716D1 (de)	1994-03-24	Transistor.
DE3785196D1 (de)	1993-05-06	Bipolartransistor mit heterouebergang.
NO881411D0 (no)	1988-03-29	Substituerte pyrroler.
DE68906095D1 (de)	1993-05-27	Vertikaler bipolartransistor.
DE3873071D1 (de)	1992-08-27	Emitterfolgerschaltung.
DE3788500D1 (de)	1994-01-27	Bipolarer Halbleitertransistor.
DE3866935D1 (de)	1992-01-30	Vertikaler ballistischer transistor.
DE3860836D1 (de)	1990-11-29	Bipolarer transistor mit heterouebergang.
DE3882565D1 (de)	1993-09-02	Bipolartransistor.
FR2606214B1 (fr)	1989-12-15	Transistor bipolaire du type heterojonction
DE3750310D1 (de)	1994-09-08	Heteroübergangs-Feldeffektanordnung.
DE3583064D1 (de)	1991-07-11	Supraleitender transistor.
DE3851175D1 (de)	1994-09-29	Bipolartransistor mit Heteroübergängen.
DE3851991D1 (de)	1994-12-08	Bipolartransistoren.

Legal Events

Date	Code	Title	Description
1994-08-25	8364	No opposition during term of opposition
1997-03-27	8328	Change in the person/name/address of the agent	Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN