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DE3750310D1 - Heteroübergangs-Feldeffektanordnung. - Google Patents

Heteroübergangs-Feldeffektanordnung.

Info

Publication number
DE3750310D1
DE3750310D1 DE3750310T DE3750310T DE3750310D1 DE 3750310 D1 DE3750310 D1 DE 3750310D1 DE 3750310 T DE3750310 T DE 3750310T DE 3750310 T DE3750310 T DE 3750310T DE 3750310 D1 DE3750310 D1 DE 3750310D1
Authority
DE
Germany
Prior art keywords
field effect
heterojunction field
effect arrangement
arrangement
heterojunction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3750310T
Other languages
English (en)
Other versions
DE3750310T2 (de
Inventor
Hikaru C O Nec Corporatio Hida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE3750310D1 publication Critical patent/DE3750310D1/de
Application granted granted Critical
Publication of DE3750310T2 publication Critical patent/DE3750310T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
DE3750310T 1986-05-23 1987-05-20 Heteroübergangs-Feldeffektanordnung. Expired - Lifetime DE3750310T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119458A JPH084138B2 (ja) 1986-05-23 1986-05-23 半導体装置

Publications (2)

Publication Number Publication Date
DE3750310D1 true DE3750310D1 (de) 1994-09-08
DE3750310T2 DE3750310T2 (de) 1995-03-02

Family

ID=14761864

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3750310T Expired - Lifetime DE3750310T2 (de) 1986-05-23 1987-05-20 Heteroübergangs-Feldeffektanordnung.

Country Status (4)

Country Link
US (1) US4807001A (de)
EP (1) EP0246641B1 (de)
JP (1) JPH084138B2 (de)
DE (1) DE3750310T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01132170A (ja) * 1987-11-18 1989-05-24 Toshiba Corp 電界効果トランジスタ
EP0323249B1 (de) * 1987-12-29 1993-11-03 Nec Corporation Halbleiterkristallstruktur und deren Herstellungsverfahren
JP2716136B2 (ja) * 1988-01-14 1998-02-18 日本電気株式会社 半導体装置
EP0334006A1 (de) * 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Heteroübergangsfeldeffekttransistor mit gestapelten Kanalschichten
US5021841A (en) * 1988-10-14 1991-06-04 University Of Illinois Semiconductor device with controlled negative differential resistance characteristic
US5227644A (en) * 1989-07-06 1993-07-13 Nec Corporation Heterojunction field effect transistor with improve carrier density and mobility
US5055891A (en) * 1990-05-31 1991-10-08 Hewlett-Packard Company Heterostructure transistor using real-space electron transfer
US5081511A (en) * 1990-09-06 1992-01-14 Motorola, Inc. Heterojunction field effect transistor with monolayers in channel region
US5124762A (en) * 1990-12-31 1992-06-23 Honeywell Inc. Gaas heterostructure metal-insulator-semiconductor integrated circuit technology
JP3135939B2 (ja) * 1991-06-20 2001-02-19 富士通株式会社 Ｈｅｍｔ型半導体装置
JP2001284576A (ja) * 2000-03-30 2001-10-12 Toshiba Corp 高電子移動度トランジスタ及びその製造方法
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
US8541773B2 (en) * 2011-05-02 2013-09-24 Intel Corporation Vertical tunneling negative differential resistance devices

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57208174A (en) * 1981-06-17 1982-12-21 Hitachi Ltd Semiconductor device
EP0067721B1 (de) * 1981-06-17 1989-04-26 Hitachi, Ltd. Halbleiteranordnung mit Heteroübergängen
JPS58188165A (ja) * 1982-04-28 1983-11-02 Nec Corp 半導体装置
JPH0624208B2 (ja) * 1982-07-29 1994-03-30 日本電気株式会社 半導体装置
JPS5932173A (ja) * 1982-08-16 1984-02-21 Toshiba Corp 電界効果トランジスタの製造方法
JPS59207667A (ja) * 1983-05-11 1984-11-24 Hitachi Ltd 半導体装置
JPS59210672A (ja) * 1983-05-16 1984-11-29 Hitachi Ltd 半導体装置
JPS6021572A (ja) * 1983-07-15 1985-02-02 Hitachi Ltd 半導体装置
US4641161A (en) * 1984-09-28 1987-02-03 Texas Instruments Incorporated Heterojunction device
JPS61161773A (ja) * 1985-01-11 1986-07-22 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
JPS61176160A (ja) * 1985-01-31 1986-08-07 Hitachi Ltd 電界効果トランジスタ
US4616242A (en) * 1985-05-08 1986-10-07 International Business Machines Corporation Enhancement and depletion mode selection layer for field effect transistor

Also Published As

Publication number Publication date
EP0246641A3 (en) 1988-05-18
EP0246641A2 (de) 1987-11-25
JPH084138B2 (ja) 1996-01-17
DE3750310T2 (de) 1995-03-02
JPS62274783A (ja) 1987-11-28
EP0246641B1 (de) 1994-08-03
US4807001A (en) 1989-02-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition