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DE3785483D1 - Halbleiteranordnung mit einem bipolartransistor und feldeffekttransistoren. - Google Patents

Halbleiteranordnung mit einem bipolartransistor und feldeffekttransistoren.

Info

Publication number
DE3785483D1
DE3785483D1 DE8787200846T DE3785483T DE3785483D1 DE 3785483 D1 DE3785483 D1 DE 3785483D1 DE 8787200846 T DE8787200846 T DE 8787200846T DE 3785483 T DE3785483 T DE 3785483T DE 3785483 D1 DE3785483 D1 DE 3785483D1
Authority
DE
Germany
Prior art keywords
field effect
bipolar transistor
effect transistors
semiconductor arrangement
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8787200846T
Other languages
English (en)
Other versions
DE3785483T2 (de
Inventor
David Henry Paxman
John Alfred George Slatter
David James Coe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3785483D1 publication Critical patent/DE3785483D1/de
Application granted granted Critical
Publication of DE3785483T2 publication Critical patent/DE3785483T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7302—Bipolar junction transistors structurally associated with other devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE87200846T 1986-05-16 1987-05-11 Halbleiteranordnung mit einem Bipolartransistor und Feldeffekttransistoren. Expired - Fee Related DE3785483T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08612010A GB2190539A (en) 1986-05-16 1986-05-16 Semiconductor devices

Publications (2)

Publication Number Publication Date
DE3785483D1 true DE3785483D1 (de) 1993-05-27
DE3785483T2 DE3785483T2 (de) 1993-10-28

Family

ID=10597998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE87200846T Expired - Fee Related DE3785483T2 (de) 1986-05-16 1987-05-11 Halbleiteranordnung mit einem Bipolartransistor und Feldeffekttransistoren.

Country Status (5)

Country Link
US (1) US4881119A (de)
EP (1) EP0247660B1 (de)
JP (1) JP2635044B2 (de)
DE (1) DE3785483T2 (de)
GB (1) GB2190539A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE35642E (en) * 1987-12-22 1997-10-28 Sgs-Thomson Microelectronics, S.R.L. Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
IT1217323B (it) * 1987-12-22 1990-03-22 Sgs Microelettronica Spa Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
JPH0254537A (ja) * 1988-08-18 1990-02-23 Seiko Epson Corp 半導体装置及び半導体装置の製造方法
US4975764A (en) * 1989-06-22 1990-12-04 David Sarnoff Research Center, Inc. High density BiCMOS circuits and methods of making same
US5381025A (en) * 1989-08-17 1995-01-10 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
WO1991003078A1 (en) * 1989-08-17 1991-03-07 Ixys Corporation Insulated gate thyristor with gate turn on and turn off
US5349212A (en) * 1992-06-01 1994-09-20 Fuji Electric Co., Ltd. Semiconductor device having thyristor structure
US5559044A (en) * 1992-09-21 1996-09-24 Siliconix Incorporated BiCDMOS process technology
EP0646965B1 (de) * 1993-09-17 1999-01-07 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Eine integrierte Vorrichtung mit einem bipolaren Transistor und einem MOSFET Transistor in Emittorschaltungsanordnung
US6004840A (en) * 1994-04-15 1999-12-21 Kabushiki Kaisha Toshiba Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion
DE69528683T2 (de) * 1994-04-15 2003-06-12 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterbauteil und Verfahren zur Herstellung desselben
GB2289371B (en) * 1994-05-05 1997-11-19 Fuji Electric Co Ltd A semiconductor device and control method
US5591655A (en) * 1995-02-28 1997-01-07 Sgs-Thomson Microelectronics, Inc. Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
US6657240B1 (en) * 2002-01-28 2003-12-02 Taiwan Semiconductoring Manufacturing Company Gate-controlled, negative resistance diode device using band-to-band tunneling
TW200837947A (en) * 2007-03-13 2008-09-16 Nat Univ Tsing Hua The structure and layout of high - efficiency lateral bipolar transistor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945324A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit verbessertem schaltverhalten
US4441117A (en) * 1981-07-27 1984-04-03 Intersil, Inc. Monolithically merged field effect transistor and bipolar junction transistor
IE56341B1 (en) * 1981-12-16 1991-07-03 Gen Electric Multicellular thyristor
US5014102A (en) * 1982-04-01 1991-05-07 General Electric Company MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal
JPS5927569A (ja) * 1982-08-06 1984-02-14 Hitachi Ltd 半導体スイツチ素子
US4623910A (en) * 1982-09-24 1986-11-18 Risberg Robert L Semiconductor device
EP0106147A1 (de) * 1982-10-04 1984-04-25 General Electric Company Abschaltbarer Thyristor
CA1200322A (en) * 1982-12-13 1986-02-04 General Electric Company Bidirectional insulated-gate rectifier structures and method of operation
US4618872A (en) * 1983-12-05 1986-10-21 General Electric Company Integrated power switching semiconductor devices including IGT and MOSFET structures
US4639761A (en) * 1983-12-16 1987-01-27 North American Philips Corporation Combined bipolar-field effect transistor resurf devices
US4672407A (en) * 1984-05-30 1987-06-09 Kabushiki Kaisha Toshiba Conductivity modulated MOSFET
GB2164790A (en) * 1984-09-19 1986-03-26 Philips Electronic Associated Merged bipolar and field effect transistors

Also Published As

Publication number Publication date
JP2635044B2 (ja) 1997-07-30
US4881119A (en) 1989-11-14
GB8612010D0 (en) 1986-06-25
DE3785483T2 (de) 1993-10-28
EP0247660B1 (de) 1993-04-21
EP0247660A3 (en) 1990-04-11
EP0247660A2 (de) 1987-12-02
JPS62274653A (ja) 1987-11-28
GB2190539A (en) 1987-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8339 Ceased/non-payment of the annual fee