DE3775603D1 - Halbleiter-speicheranordnung mit redundanzschaltungsteil. - Google Patents

Halbleiter-speicheranordnung mit redundanzschaltungsteil.

Info

Publication number: DE3775603D1
Authority: DE; Germany
Prior art keywords: semiconductor memory; circuit part; memory arrangement; redundancy circuit; redundancy
Prior art date: 1986-03-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

DE8787302312T

Other languages

English (en)

Inventor

Yoshihiro Takemae

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1986-03-20

Filing date

1987-03-18

Publication date

1992-02-13

1987-03-18 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1992-02-13 Application granted granted Critical

1992-02-13 Publication of DE3775603D1 publication Critical patent/DE3775603D1/de

2007-03-19 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/84—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability
- G11C29/842—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved access time or stability by introducing a delay in a signal path

DE8787302312T 1986-03-20 1987-03-18 Halbleiter-speicheranordnung mit redundanzschaltungsteil. Expired - Fee Related DE3775603D1 (de)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP61060929A JPS62222500A (ja)	1986-03-20	1986-03-20	半導体記憶装置

Publications (1)

Publication Number	Publication Date
DE3775603D1 true DE3775603D1 (de)	1992-02-13

Family

ID=13156562

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
DE8787302312T Expired - Fee Related DE3775603D1 (de)	1986-03-20	1987-03-18	Halbleiter-speicheranordnung mit redundanzschaltungsteil.

Country Status (5)

Country	Link
US (1)	US4803656A (de)
EP (1)	EP0242981B1 (de)
JP (1)	JPS62222500A (de)
KR (1)	KR900008637B1 (de)
DE (1)	DE3775603D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5022006A (en) *	1988-04-01	1991-06-04	International Business Machines Corporation	Semiconductor memory having bit lines with isolation circuits connected between redundant and normal memory cells
JP2785936B2 (ja) *	1988-04-12	1998-08-13	日本電気株式会社	冗長回路のテスト方法
US4922128A (en) *	1989-01-13	1990-05-01	Ibm Corporation	Boost clock circuit for driving redundant wordlines and sample wordlines
EP0389203A3 (de) *	1989-03-20	1993-05-26	Fujitsu Limited	Halbleiterspeichergerät beinhaltend Information, die die Anwesenheit mangelhafter Speicherzellen anzeigt
JP2547633B2 (ja) *	1989-05-09	1996-10-23	三菱電機株式会社	半導体記憶装置
US5184327A (en) *	1989-06-14	1993-02-02	Mitsubishi Denki Kabushiki Kaisha	Semiconductor memory device having on-chip test circuit and method for testing the same
JPH0748320B2 (ja) *	1989-07-24	1995-05-24	セイコー電子工業株式会社	半導体不揮発性メモリ
JPH0670776B2 (ja) *	1990-02-23	1994-09-07	株式会社東芝	半導体集積回路
JPH03252998A (ja) *	1990-02-28	1991-11-12	Sharp Corp	半導体記憶装置
KR100274478B1 (ko) *	1990-05-10	2001-01-15	칼 하인쯔 호르닝어	병렬 테스트 장치를 갖는 집적 반도체 메모리 및 그 리던던시 방법
US5276834A (en) *	1990-12-04	1994-01-04	Micron Technology, Inc.	Spare memory arrangement
KR940002272B1 (ko) *	1991-05-24	1994-03-19	삼성전자 주식회사	리던던시 기능을 가지는 반도체 메모리 장치
JPH0620494A (ja) *	1992-06-30	1994-01-28	Hitachi Ltd	半導体記憶装置
JPH06119796A (ja) *	1992-10-06	1994-04-28	Texas Instr Japan Ltd	欠陥メモリセル救済用デコーダ
JPH06242925A (ja) *	1993-02-15	1994-09-02	Mitsubishi Electric Corp	ソート処理装置
US5526503A (en) *	1993-10-06	1996-06-11	Ast Research, Inc.	Virtual addressing buffer circuit
US5495447A (en) *	1993-10-08	1996-02-27	Digital Equipment Corporation	Method and apparatus using mapped redundancy to perform multiple large block memory array repair
US5461586A (en) *	1994-01-31	1995-10-24	Texas Instruments Incorporated	Self-timed redundancy circuit
GB9417269D0 (en) *	1994-08-26	1994-10-19	Inmos Ltd	Memory and test method therefor
JP3226425B2 (ja) *	1994-09-09	2001-11-05	富士通株式会社	半導体記憶装置
JP3425811B2 (ja) *	1994-09-28	2003-07-14	Ｎｅｃエレクトロニクス株式会社	半導体メモリ
US5640353A (en) *	1995-12-27	1997-06-17	Act Corporation	External compensation apparatus and method for fail bit dynamic random access memory
GB9609834D0 (en) *	1996-05-10	1996-07-17	Memory Corp Plc	Semiconductor device
DE69618344T2 (de) *	1996-06-06	2002-08-14	Stmicroelectronics S.R.L., Agrate Brianza	Schaltung um redundante Daten einer Redundanzschaltung innerhalb einer Speicheranordnung durch zeitgeteilte Annäherung zu übertragen
JP4062247B2 (ja) *	2003-12-11	2008-03-19	ソニー株式会社	半導体記憶装置
KR100541819B1 (ko) *	2003-12-30	2006-01-10	삼성전자주식회사	스타트 프로그램 전압을 차등적으로 사용하는 불휘발성반도체 메모리 장치 및 그에 따른 프로그램 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4228528B2 (en) *	1979-02-09	1992-10-06		Memory with redundant rows and columns
DE3071955D1 (en) *	1979-06-15	1987-05-27	Fujitsu Ltd	Semiconductor memory device
US4441170A (en) *	1980-09-30	1984-04-03	Intel Corporation	Memory redundancy apparatus for single chip memories
JPS6051199B2 (ja) *	1980-11-13	1985-11-12	富士通株式会社	半導体装置
US4376300A (en) *	1981-01-02	1983-03-08	Intel Corporation	Memory system employing mostly good memories
US4422161A (en) *	1981-10-08	1983-12-20	Rca Corporation	Memory array with redundant elements
US4480199A (en) *	1982-03-19	1984-10-30	Fairchild Camera & Instrument Corp.	Identification of repaired integrated circuits
JPS595497A (ja) *	1982-07-02	1984-01-12	Hitachi Ltd	半導体ｒｏｍ
JPS59203299A (ja) *	1983-05-06	1984-11-17	Nec Corp	冗長ビット付メモリ
JPS6089899A (ja) *	1983-10-24	1985-05-20	Nec Corp	メモリ回路
JPS60114025A (ja) *	1983-11-25	1985-06-20	Nec Corp	パルス回路

1986
- 1986-03-20 JP JP61060929A patent/JPS62222500A/ja active Granted
1987
- 1987-03-18 DE DE8787302312T patent/DE3775603D1/de not_active Expired - Fee Related
- 1987-03-18 EP EP87302312A patent/EP0242981B1/de not_active Expired - Lifetime
- 1987-03-20 KR KR1019870002571A patent/KR900008637B1/ko not_active IP Right Cessation
- 1987-03-20 US US07/028,463 patent/US4803656A/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
EP0242981A2 (de)	1987-10-28
EP0242981B1 (de)	1992-01-02
KR900008637B1 (ko)	1990-11-26
JPH0526280B2 (de)	1993-04-15
KR870009383A (ko)	1987-10-26
US4803656A (en)	1989-02-07
EP0242981A3 (en)	1989-12-13
JPS62222500A (ja)	1987-09-30

Publication	Publication Date	Title
DE3762295D1 (de)	1990-05-17	Halbleiterspeichereinrichtung mit redundanzschaltungsteil.
DE3775603D1 (de)	1992-02-13	Halbleiter-speicheranordnung mit redundanzschaltungsteil.
DE68920243D1 (de)	1995-02-09	Halbleiter-Speicherschaltung.
DE3584142D1 (de)	1991-10-24	Integrierte halbleiterschaltungsanordnung mit eingebauten speichern.
DE3788487D1 (de)	1994-01-27	Integrierte Schaltung mit Speicherselbstprüfung.
DE58906492D1 (de)	1994-02-03	Halbleiterschaltung.
DE3778439D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3751002D1 (de)	1995-03-02	Halbleiterspeicher.
DE3788747D1 (de)	1994-02-24	Halbleiterspeicher.
DE68921088D1 (de)	1995-03-23	Integrierte Halbleiterschaltung.
DE3585733D1 (de)	1992-04-30	Halbleiterspeichereinrichtung mit lese-aenderung-schreib-konfiguration.
DE3586375D1 (de)	1992-08-27	Halbleiterspeicheranordnung mit einer redundanzschaltung.
DE3772137D1 (de)	1991-09-19	Halbleiter-speicheranordnung.
DE3779705D1 (de)	1992-07-16	Integrierte speicherschaltung mit blockadressierung.
DE3771238D1 (de)	1991-08-14	Halbleiterspeicher.
DE3778408D1 (de)	1992-05-27	Halbleiterspeicheranordnung.
DE3680562D1 (de)	1991-09-05	Halbleiterspeicheranordnung.
DE3675445D1 (de)	1990-12-13	Halbleiterspeicheranordnung.
DE3787616D1 (de)	1993-11-04	Halbleiterspeicheranordnung.
DE3783666D1 (de)	1993-03-04	Halbleiterspeicheranordnung.
DE3680265D1 (de)	1991-08-22	Halbleiterschaltungsanordnung.
DE3884492D1 (de)	1993-11-04	Integrierte halbleiterschaltungsanordnung.
DE3889570D1 (de)	1994-06-23	Halbleiterschaltung.
DE68915136D1 (de)	1994-06-09	Integrierte Halbleiterspeicherschaltung.
DE3783493D1 (de)	1993-02-25	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
1993-02-04	8364	No opposition during term of opposition
1995-03-09	8339	Ceased/non-payment of the annual fee